KR101752018B1 - 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 - Google Patents

무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 Download PDF

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KR101752018B1
KR101752018B1 KR1020127004870A KR20127004870A KR101752018B1 KR 101752018 B1 KR101752018 B1 KR 101752018B1 KR 1020127004870 A KR1020127004870 A KR 1020127004870A KR 20127004870 A KR20127004870 A KR 20127004870A KR 101752018 B1 KR101752018 B1 KR 101752018B1
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polyhydric alcohol
composition
copper
oxide
substrate
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KR20120051721A (ko
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코넬리아 뢰거-괴퍼트
로만 베네딕트 라에터
알렉산드라 하그
디터 마이어
샤를롯 엠넷
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바스프 에스이
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Paints Or Removers (AREA)
KR1020127004870A 2009-07-30 2010-07-16 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물 Active KR101752018B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22980309P 2009-07-30 2009-07-30
US61/229,803 2009-07-30
PCT/EP2010/060276 WO2011012462A2 (en) 2009-07-30 2010-07-16 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (2)

Publication Number Publication Date
KR20120051721A KR20120051721A (ko) 2012-05-22
KR101752018B1 true KR101752018B1 (ko) 2017-06-28

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KR1020127004870A Active KR101752018B1 (ko) 2009-07-30 2010-07-16 무보이드 서브마이크론 피쳐 충전을 위한 억제제를 포함하는 도금용 조성물

Country Status (11)

Country Link
US (1) US9869029B2 (https=)
EP (1) EP2459778B1 (https=)
JP (1) JP5714581B2 (https=)
KR (1) KR101752018B1 (https=)
CN (1) CN102597329B (https=)
IL (1) IL217536A (https=)
MY (1) MY157126A (https=)
RU (1) RU2539897C2 (https=)
SG (2) SG177685A1 (https=)
TW (1) TWI487813B (https=)
WO (1) WO2011012462A2 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5775077B2 (ja) * 2009-07-30 2015-09-09 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 無ボイドでのサブミクロン構造物充填用の、抑制剤を含有する金属メッキ組成物
US8790426B2 (en) 2010-04-27 2014-07-29 Basf Se Quaternized terpolymer
MY170653A (en) 2010-12-21 2019-08-23 Basf Se Composition for metal electroplating comprising leveling agent
KR101884163B1 (ko) * 2011-02-22 2018-08-30 바스프 에스이 글리세릴 카르보네이트 기반 중합체
BR112013021062A2 (pt) * 2011-02-22 2019-09-24 Basf Se polímero, processo para a preparação de um polímero, e, uso de um polímero
US9631292B2 (en) 2011-06-01 2017-04-25 Basf Se Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
US20130133243A1 (en) 2011-06-28 2013-05-30 Basf Se Quaternized nitrogen compounds and use thereof as additives in fuels and lubricants
MY172822A (en) 2012-11-09 2019-12-12 Basf Se Composition for metal electroplating comprising leveling agent
JP6463330B2 (ja) * 2013-03-13 2019-01-30 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 土壌の保水性を有効に高める湿潤剤組成物およびその特定のための関連方法
PL406197A1 (pl) * 2013-11-22 2015-05-25 Inphotech Spółka Z Ograniczoną Odpowiedzialnością Sposób łączenia włókien światłowodowych pokrytych warstwą przewodzącą z elementami metalowymi
JP6474410B2 (ja) * 2013-12-09 2019-02-27 アヴニ 電気化学的に不活性なカチオンを含む銅電着浴
US9617648B2 (en) * 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
KR102566586B1 (ko) * 2016-07-18 2023-08-16 바스프 에스이 보이드 없는 서브미크론 피쳐 충전을 위한 첨가제를 포함하는 코발트 도금용 조성물
CN110100048B (zh) * 2016-12-20 2022-06-21 巴斯夫欧洲公司 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
KR102641595B1 (ko) 2017-09-04 2024-02-27 바스프 에스이 평탄화 제제를 포함하는 금속 전기 도금용 조성물
CN111344438B (zh) * 2017-11-20 2025-06-06 巴斯夫欧洲公司 用于电镀钴的包含流平剂的组合物
CN111918985B (zh) * 2018-03-29 2024-02-02 巴斯夫欧洲公司 用于锡-银合金电镀的包含配位剂的组合物
US10529622B1 (en) 2018-07-10 2020-01-07 International Business Machines Corporation Void-free metallic interconnect structures with self-formed diffusion barrier layers
WO2021058336A1 (en) 2019-09-27 2021-04-01 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
EP4034696A1 (en) 2019-09-27 2022-08-03 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
KR20220164496A (ko) 2020-04-03 2022-12-13 바스프 에스이 폴리아미노아미드 유형 레벨링제를 포함하는 구리 범프 전착용 조성물
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
US11384446B2 (en) 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
KR20240070557A (ko) 2021-10-01 2024-05-21 바스프 에스이 폴리아미노아미드 타입 레벨링제를 포함하는 구리 전착용 조성물
US20250388725A1 (en) 2022-07-07 2025-12-25 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
CN120457244A (zh) 2022-12-19 2025-08-08 巴斯夫欧洲公司 用于铜纳米孪晶电沉积的组合物
US20250149380A1 (en) * 2023-11-02 2025-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect structure and method of forming same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050133376A1 (en) * 2003-12-19 2005-06-23 Opaskar Vincent C. Alkaline zinc-nickel alloy plating compositions, processes and articles therefrom
US20060213780A1 (en) 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2441555A (en) 1943-10-12 1948-05-18 Heyden Chemical Corp Mixed esters of polyhydric alcohols
GB602591A (en) 1945-02-12 1948-05-31 Du Pont Improvements in or relating to the electro-deposition of metals
US3956079A (en) * 1972-12-14 1976-05-11 M & T Chemicals Inc. Electrodeposition of copper
US4505839A (en) 1981-05-18 1985-03-19 Petrolite Corporation Polyalkanolamines
US4376685A (en) * 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
SU1055781A1 (ru) * 1982-03-22 1983-11-23 Ленинградский ордена Трудового Красного Знамени технологический институт целлюлозно-бумажной промышленности Водный электролит блест щего меднени
US4487853A (en) * 1983-12-27 1984-12-11 Basf Wyandotte Corporation Low ethylene oxide/high primary hydroxyl content polyether-ester polyols and polyurethane foams based thereon
JPS62182295A (ja) * 1985-08-07 1987-08-10 Daiwa Tokushu Kk 銅メツキ浴組成物
DE4003243A1 (de) 1990-02-03 1991-08-08 Basf Ag Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen
US5888373A (en) * 1997-06-23 1999-03-30 Industrial Technology Research Institute Method for repairing nickel-zinc-copper or nickel-zinc alloy electroplating solutions from acidic waste solutions containing nickel and zinc ions and electroplating thereof
DE10033433A1 (de) * 2000-07-10 2002-01-24 Basf Ag Verfahren zur elektrolytischen Verzinkung aus alkansulfonsäurehaltigen Elektrolyten
US20020074242A1 (en) * 2000-10-13 2002-06-20 Shipley Company, L.L.C. Seed layer recovery
EP1197587B1 (en) 2000-10-13 2006-09-20 Shipley Co. L.L.C. Seed layer repair and electroplating bath
EP1341951B1 (en) * 2000-10-19 2004-05-19 ATOTECH Deutschland GmbH Copper bath and method of depositing a matt copper coating
US6776893B1 (en) * 2000-11-20 2004-08-17 Enthone Inc. Electroplating chemistry for the CU filling of submicron features of VLSI/ULSI interconnect
DE10107880B4 (de) 2001-02-20 2007-12-06 Clariant Produkte (Deutschland) Gmbh Alkoxylierte Polyglycerine und ihre Verwendung als Emulsionsspalter
EP1422320A1 (en) 2002-11-21 2004-05-26 Shipley Company, L.L.C. Copper electroplating bath
DE10325198B4 (de) 2003-06-04 2007-10-25 Clariant Produkte (Deutschland) Gmbh Verwendung von alkoxylierten vernetzten Polyglycerinen als biologisch abbaubare Emulsionsspalter
EP1819848A1 (en) * 2004-11-29 2007-08-22 Technic, Incorporated Near neutral ph tin electroplating solution
RU2282682C1 (ru) * 2005-04-28 2006-08-27 Российский химико-технологический университет им. Д.И. Менделеева Электролит и способ меднения
MY142392A (en) 2005-10-26 2010-11-30 Malaysian Palm Oil Board A process for preparing polymers of polyhydric alcohols
US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
RU2385366C1 (ru) * 2008-12-15 2010-03-27 Федеральное государственное образовательное учреждение высшего профессионального образования Российский государственный университет им. Иммануила Канта Электролит меднения стальных подложек
US20120018310A1 (en) 2009-04-07 2012-01-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
WO2010115756A1 (en) 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN102365396B (zh) 2009-04-07 2014-12-31 巴斯夫欧洲公司 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050133376A1 (en) * 2003-12-19 2005-06-23 Opaskar Vincent C. Alkaline zinc-nickel alloy plating compositions, processes and articles therefrom
US20060213780A1 (en) 2005-03-24 2006-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Electroplating composition and method

Also Published As

Publication number Publication date
US9869029B2 (en) 2018-01-16
JP5714581B2 (ja) 2015-05-07
SG177685A1 (en) 2012-02-28
TWI487813B (zh) 2015-06-11
MY157126A (en) 2016-05-13
WO2011012462A3 (en) 2012-01-19
CN102597329A (zh) 2012-07-18
TW201109477A (en) 2011-03-16
IL217536A0 (en) 2012-02-29
US20120128888A1 (en) 2012-05-24
RU2012107133A (ru) 2013-09-10
RU2539897C2 (ru) 2015-01-27
WO2011012462A2 (en) 2011-02-03
CN102597329B (zh) 2015-12-16
EP2459778B1 (en) 2015-01-14
SG10201404394QA (en) 2014-10-30
EP2459778A2 (en) 2012-06-06
JP2013500394A (ja) 2013-01-07
IL217536A (en) 2016-05-31
KR20120051721A (ko) 2012-05-22

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