JP2013194307A - 成膜装置内の金属膜のドライクリーニング方法 - Google Patents
成膜装置内の金属膜のドライクリーニング方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000005108 dry cleaning Methods 0.000 title claims abstract description 24
- 230000008021 deposition Effects 0.000 title abstract description 4
- 238000004140 cleaning Methods 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims description 51
- 229910052751 metal Inorganic materials 0.000 claims description 51
- QAMFBRUWYYMMGJ-UHFFFAOYSA-N hexafluoroacetylacetone Chemical group FC(F)(F)C(=O)CC(=O)C(F)(F)F QAMFBRUWYYMMGJ-UHFFFAOYSA-N 0.000 claims description 8
- SHXHPUAKLCCLDV-UHFFFAOYSA-N 1,1,1-trifluoropentane-2,4-dione Chemical compound CC(=O)CC(=O)C(F)(F)F SHXHPUAKLCCLDV-UHFFFAOYSA-N 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 19
- 239000007789 gas Substances 0.000 description 50
- 239000000758 substrate Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 238000010790 dilution Methods 0.000 description 6
- 239000012895 dilution Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000011888 foil Substances 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 150000004696 coordination complex Chemical class 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910019233 CoFeNi Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910000777 cunife Inorganic materials 0.000 description 1
- 125000005594 diketone group Chemical group 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
- C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
- C23G5/032—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing oxygen-containing compounds
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
【解決手段】 成膜装置に付着した金属膜をβ−ジケトンを用いて除去するドライクリーニング法において、β−ジケトンとNOx(NO、N2Oのいずれかを示す。)を含むガスをクリーニングガスとして用いて、200℃〜400℃の温度範囲内である該金属膜と、該クリーニングガスを反応させることにより、該金属膜を除去することを特徴とする、ドライクリーニング方法。
【選択図】 図1
Description
本試験において、導入するクリーニングガスの総流量は500sccmであり、希釈ガスはN2とし、サンプル7A、7B、7C、7D、7Eを240℃、275℃、300℃、325℃、370℃に加熱した。
本試験において、導入するクリーニングガスの総流量は500sccmであり、希釈ガスはN2とし、サンプル7A、7B、7C、7D、7Eを240℃、275℃、300℃、325℃、370℃に加熱した。
21:β−ジケトン供給系
22:NOx供給系
23:希釈ガス供給系
31、32、33、34:バルブ
41、42:ガス配管
5A、5B、5C、5D、5E: ヒーターステージ
61、62A、62B、62C、62D、62E:ヒーター
7A、7B、7C、7D、7E:サンプル
8 :真空ポンプ
Claims (4)
- 成膜装置に付着した金属膜をβ−ジケトンを用いて除去するドライクリーニング法において、β−ジケトンとNOx(NO、N2Oのいずれかを示す。)を含むガスをクリーニングガスとして用いて、200℃〜400℃の温度範囲内である該金属膜と、該クリーニングガスを反応させることにより、該金属膜を除去することを特徴とする、ドライクリーニング方法。
- 前記β−ジケトンが、ヘキサフルオロアセチルアセトン又はトリフルオロアセチルアセトンであることを特徴とする、請求項1に記載のドライクリーニング方法。
- 前記クリーニングガス中に、He、Ar、N2からなる群から選ばれる少なくとも1種類以上のガスが含有されていることを特徴とする請求項1又は請求項2のいずれか1項に記載のドライクリーニング方法。
- 前記金属膜が、周期表の第6族から第11族までの少なくとも一種類以上の元素で構成されていることを特徴とする、請求項1に記載のドライクリーニング方法。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012065523A JP5929386B2 (ja) | 2012-03-22 | 2012-03-22 | 成膜装置内の金属膜のドライクリーニング方法 |
US14/386,575 US20150047680A1 (en) | 2012-03-22 | 2013-02-20 | Method for Dry-Cleaning Metal Film in Film-Formation Apparatus |
PCT/JP2013/054177 WO2013140926A1 (ja) | 2012-03-22 | 2013-02-20 | 成膜装置内の金属膜のドライクリーニング方法 |
KR1020167024772A KR20160110545A (ko) | 2012-03-22 | 2013-02-20 | 성막 장치 내의 금속막의 드라이클리닝 방법 |
CN201380015350.9A CN104220632B (zh) | 2012-03-22 | 2013-02-20 | 成膜装置内的金属膜的干洗方法 |
KR1020147026218A KR20140124858A (ko) | 2012-03-22 | 2013-02-20 | 성막 장치 내의 금속막의 드라이클리닝 방법 |
KR1020177016719A KR20170072961A (ko) | 2012-03-22 | 2013-02-20 | 성막 장치 내의 금속막의 드라이클리닝 방법 |
EP13764235.1A EP2829629B1 (en) | 2012-03-22 | 2013-02-20 | Method for dry-cleaning metal film in film-formation apparatus |
TW102109528A TWI509064B (zh) | 2012-03-22 | 2013-03-18 | A dry cleaning method for a metal film in a film forming apparatus |
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JP2012065523A JP5929386B2 (ja) | 2012-03-22 | 2012-03-22 | 成膜装置内の金属膜のドライクリーニング方法 |
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JP2013194307A true JP2013194307A (ja) | 2013-09-30 |
JP5929386B2 JP5929386B2 (ja) | 2016-06-08 |
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JP2012065523A Active JP5929386B2 (ja) | 2012-03-22 | 2012-03-22 | 成膜装置内の金属膜のドライクリーニング方法 |
Country Status (7)
Country | Link |
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US (1) | US20150047680A1 (ja) |
EP (1) | EP2829629B1 (ja) |
JP (1) | JP5929386B2 (ja) |
KR (3) | KR20170072961A (ja) |
CN (1) | CN104220632B (ja) |
TW (1) | TWI509064B (ja) |
WO (1) | WO2013140926A1 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017059824A (ja) * | 2015-09-15 | 2017-03-23 | セントラル硝子株式会社 | ドライエッチング方法、半導体素子の製造方法及びチャンバークリーニング方法 |
WO2017134930A1 (ja) * | 2016-02-02 | 2017-08-10 | セントラル硝子株式会社 | エッチング方法及びエッチング装置 |
WO2018020822A1 (ja) * | 2016-07-26 | 2018-02-01 | セントラル硝子株式会社 | エッチング方法及びエッチング装置 |
JP2018110229A (ja) * | 2017-01-04 | 2018-07-12 | セントラル硝子株式会社 | ドライエッチング方法及びエッチング装置 |
JP2018110230A (ja) * | 2017-01-04 | 2018-07-12 | セントラル硝子株式会社 | ドライエッチング方法及びβ−ジケトン充填済み容器 |
JP2019169724A (ja) * | 2019-05-08 | 2019-10-03 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
WO2020179449A1 (ja) | 2019-03-01 | 2020-09-10 | セントラル硝子株式会社 | ドライエッチング方法、半導体デバイスの製造方法及びエッチング装置 |
WO2021079624A1 (ja) | 2019-10-23 | 2021-04-29 | セントラル硝子株式会社 | ドライエッチング方法、半導体デバイスの製造方法及びエッチング装置 |
WO2022230859A1 (ja) * | 2021-04-28 | 2022-11-03 | セントラル硝子株式会社 | 表面処理方法、ドライエッチング方法、クリーニング方法、半導体デバイスの製造方法及びエッチング装置 |
Families Citing this family (2)
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CN109844904B (zh) | 2016-08-05 | 2023-04-28 | 应用材料公司 | 通过等离子体处理的氟化铝减少 |
CN114026674A (zh) * | 2019-06-24 | 2022-02-08 | 朗姆研究公司 | 衬底表面的蒸气清洁 |
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2012
- 2012-03-22 JP JP2012065523A patent/JP5929386B2/ja active Active
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2013
- 2013-02-20 KR KR1020177016719A patent/KR20170072961A/ko not_active Application Discontinuation
- 2013-02-20 KR KR1020147026218A patent/KR20140124858A/ko active Application Filing
- 2013-02-20 US US14/386,575 patent/US20150047680A1/en not_active Abandoned
- 2013-02-20 CN CN201380015350.9A patent/CN104220632B/zh active Active
- 2013-02-20 KR KR1020167024772A patent/KR20160110545A/ko active Application Filing
- 2013-02-20 EP EP13764235.1A patent/EP2829629B1/en not_active Not-in-force
- 2013-02-20 WO PCT/JP2013/054177 patent/WO2013140926A1/ja active Application Filing
- 2013-03-18 TW TW102109528A patent/TWI509064B/zh active
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Also Published As
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KR20140124858A (ko) | 2014-10-27 |
CN104220632B (zh) | 2016-09-28 |
TWI509064B (zh) | 2015-11-21 |
JP5929386B2 (ja) | 2016-06-08 |
TW201343907A (zh) | 2013-11-01 |
EP2829629A1 (en) | 2015-01-28 |
EP2829629B1 (en) | 2017-05-03 |
WO2013140926A1 (ja) | 2013-09-26 |
KR20170072961A (ko) | 2017-06-27 |
KR20160110545A (ko) | 2016-09-21 |
EP2829629A4 (en) | 2015-09-09 |
US20150047680A1 (en) | 2015-02-19 |
CN104220632A (zh) | 2014-12-17 |
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