JP2013187227A - 封止シート、発光ダイオード装置およびその製造方法 - Google Patents
封止シート、発光ダイオード装置およびその製造方法 Download PDFInfo
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- JP2013187227A JP2013187227A JP2012049032A JP2012049032A JP2013187227A JP 2013187227 A JP2013187227 A JP 2013187227A JP 2012049032 A JP2012049032 A JP 2012049032A JP 2012049032 A JP2012049032 A JP 2012049032A JP 2013187227 A JP2013187227 A JP 2013187227A
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- Prior art keywords
- silicone resin
- resin composition
- group
- emitting diode
- sealing
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 229920002050 silicone resin Polymers 0.000 claims abstract description 247
- 239000011342 resin composition Substances 0.000 claims abstract description 235
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- 238000000034 method Methods 0.000 claims abstract description 72
- 229920001187 thermosetting polymer Polymers 0.000 claims description 84
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 48
- 239000012815 thermoplastic material Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 2
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- 150000002430 hydrocarbons Chemical group 0.000 description 72
- 239000003054 catalyst Substances 0.000 description 63
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- 238000007259 addition reaction Methods 0.000 description 52
- 238000006482 condensation reaction Methods 0.000 description 48
- POPVULPQMGGUMJ-UHFFFAOYSA-N octasilsesquioxane cage Chemical compound O1[SiH](O[SiH](O2)O[SiH](O3)O4)O[SiH]4O[SiH]4O[SiH]1O[SiH]2O[SiH]3O4 POPVULPQMGGUMJ-UHFFFAOYSA-N 0.000 description 48
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 22
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- 238000000748 compression moulding Methods 0.000 description 21
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical group [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 21
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- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 15
- 229910052739 hydrogen Inorganic materials 0.000 description 15
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 8
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 7
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- 125000000524 functional group Chemical group 0.000 description 6
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- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 5
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- 125000000217 alkyl group Chemical group 0.000 description 4
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- 239000003795 chemical substances by application Substances 0.000 description 4
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 4
- 239000003431 cross linking reagent Substances 0.000 description 4
- 238000007731 hot pressing Methods 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
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- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 125000005442 diisocyanate group Chemical group 0.000 description 3
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract
【解決手段】表面から内方に向かって凹む凹部4が形成される透明層2と、凹部4に充填される蛍光封止層3とを備え、透明層2が、第1のシリコーン樹脂組成物を含む透明組成物から形成され、蛍光封止層3が、蛍光体と、第2のシリコーン樹脂組成物とを含む蛍光封止組成物から形成される封止シート1を用意し、発光ダイオード素子11を封止シート1の蛍光封止層3に埋設することにより、発光ダイオード素子11を封止シート1によって封止する。
【選択図】図6
Description
一般式(1):
上記一般式(1)中、R1で示される1価の炭化水素基において、飽和炭化水素基としては、例えば、炭素数1〜6の直鎖状または分岐状のアルキル基(メチル基、エチル基、プロピル基、イソプロピル基、ブチル基、イソブチル基、ペンチル基、ヘキシル基など)、例えば、炭素数3〜6のシクロアルキル基(シクロペンチル基、シクロヘキシル基など)などが挙げられる。
一般式(2):
R2−Si(X1)3 (2)
(一般式(2)中、R2は、1価のエチレン系不飽和炭化水素基を示し、X1は、ハロゲン原子、アルコキシ基、フェノキシ基またはアセトキシ基を示す。但し、X1は、同一または互いに相異なっていてもよい。)
上記一般式(2)において、R2で示されるエチレン系不飽和炭化水素基としては、置換または非置換のエチレン系不飽和炭化水素基が挙げられ、例えば、アルケニル基、シクロアルケニル基などが挙げられる。
一般式(3):
R3−Si(X2)3 (3)
(一般式(3)中、R3は、エポキシ構造含有基を示し、X2は、ハロゲン原子、アルコキシ基、フェノキシ基またはアセトキシ基を示す。但し、X2は、同一または互いに相異なっていてもよい。)
一般式(3)において、R3で示されるエポキシ構造含有基としては、例えば、エポキシ基、例えば、グリシジルエーテル基、例えば、エポキシシクロヘキシル基などのエポキシシクロアルキル基などが挙げられる。
一般式(4):
上記一般式(4)中、R4で示される2価の炭化水素基において、飽和炭化水素基としては、例えば、炭素数1〜6のアルキレン基(メチレン基、エチレン基、プロピレン基、ブチレン基など)、例えば、炭素数3〜8のシクロアルキレン基(シクロペンチレン基、シクロヘキシレン基など)などが挙げられる。
より具体的には、下記式(6)で表される。
上記式(5)および(6)において、R5にて示される1価の炭化水素基は、上記式(1)のR1で例示した1価の炭化水素基と同様のものが挙げられる。
式(7)においてR7で示される1価の炭化水素基は、同一または相異なっていてもよく、好ましくは、同一である。
A〜Dは、直鎖状シロキサン含有ポリシロキサンを構成する。
E〜Hは、分枝状シロキサン含有ポリシロキサンを構成する。
作製例1
(透明層:Cステージのシリコーン樹脂組成物)
付加反応硬化型シリコーン樹脂組成物(商品名:LR−7665、旭化成ワッカー社製)のA液とB液とを1/1で混合して混合液を調製した。
(透明層:Bステージのシリコーン樹脂組成物)
シラノール基両末端ポリジメチルシロキサン(シラノール基両末端ポリシロキサン、一般式(1)中、R1がすべてメチル、nの平均が155、数平均分子量11,500、シラノール基当量0.174mmol/g)2031g(0.177モル)に対して、ビニルトリメトキシシラン(エチレン系ケイ素化合物)15.71g(0.106モル)、および、(3−グリシドキシプロピル)トリメトキシシラン(エポキシ基含有ケイ素化合物)2.80g(0.0118モル)を配合して、攪拌混合した。
(透明層:エポキシ樹脂組成物)
ビスフェノールA型エポキシ樹脂(エピコートEP1256、エポキシ当量7500、ジャパンエポキシレジン社製)45質量部、脂環型エポキシ樹脂(EHPE3150、エポキシ当量260、ダイセル化学社製)33質量部、4−メチルヘキサヒドロ無水フタル酸(MH−700、新日本理化社製)22質量部、および、2−メチルイミダゾール(四国化成社製)1.2質量部を、メチルエチルケトンに、固形分濃度が50質量%となるように溶解し、エポキシ樹脂組成物溶液を調製した。
実施例1
(透明層:Cステージのシリコーン樹脂組成物/蛍光封止層:蛍光体+シリコーン樹脂組成物の熱可塑体)
水酸化テトラメチルアンモニウム(25%メタノール溶液)66.8mL(158.6mol)、メタノール32.8mLおよび蒸留水24.6mLの混合液に、テトラエトキシシラン35.8mL(160.6mol)を徐々に滴下して一昼夜攪拌することにより、それらを反応させた。
(透明層:Bステージのシリコーン樹脂組成物/蛍光封止層:蛍光体+シリコーン樹脂組成物の熱可塑体)
作製例1の透明層(Cステージのシリコーン樹脂組成物からなる透明層)に代えて、作製例2の透明層(Bステージのシリコーン樹脂組成物からなる透明層)を用いた以外は、実施例1と同様にして、蛍光封止組成物を注入して、続いて、蛍光封止層を形成させることによって、封止シートを得た。
(透明層:Cステージのシリコーン樹脂組成物/蛍光封止層:蛍光体+Bステージのシリコーン樹脂組成物)
作製例2と同様の、Aステージの常温液状の熱硬化型シリコーン樹脂組成物(縮合反応・付加反応硬化型シリコーン樹脂組成物)を調製した。
(透明層:Cステージのエポキシ樹脂組成物/蛍光封止層:蛍光体+シリコーン樹脂組成物の熱可塑体)
作製例1の透明層(Cステージのシリコーン樹脂組成物からなる透明層)に代えて、比較作製例1の透明層(Cステージのエポキシ樹脂組成物からなる透明層)を用いた以外は、実施例1と同様にして、蛍光封止組成物を注入して、続いて、蛍光封止層を形成することによって、封止シートを得た。
(蛍光封止層単層シート:蛍光体+シリコーン樹脂組成物の熱可塑体)
作製例2と同様の、常温液状の熱硬化型シリコーン樹脂組成物(縮合反応・付加反応硬化型シリコーン樹脂組成物)を用意した。
9個の発光ダイオード素子が実装された基板を用意した。各発光ダイオード素子は、平面視矩形状をなし、寸法は、厚み200μm、1mm×1mmであり、各発光ダイオード素子間の間隔は、2mmであり、ピッチは、3mmであった。
1. 蛍光体の配合量
発光ダイオード装置における1枚の封止シートに配合された蛍光体の配合量を計算した。その結果を表1に示す。
2. 色度
発光ダイオード装置に250mAの電流を流して、発光ダイオード素子を点灯させ、その際のCIE色度指標(y値)を測定した。その結果を表1に示す。
3. 外観
発光ダイオード装置に250mAの電流を流して、発光ダイオード素子を300時間点灯させ、点灯試験前後における外観(下記3−1.〜3−4.)をそれぞれ評価した。
それらの結果を表1に示す。
3−1.透明層の着色
○:試験後の透明層に着色が観察されなかった。
×:試験後の透明層に黄変が観察された。
3−2.透明層のクラック
○:試験後の透明層にクラックが観察されなかった。
×:試験後の透明層にクラックが観察された。
3−3.透明層および蛍光封止層間の剥離
○:試験後の透明層および蛍光封止層間に剥離が観察されなかった。
△:試験後の透明層および蛍光封止層間に部分的な剥離が観察された。
3−4.封止シートおよび基板間の剥離
○:試験後の封止シートおよび基板間に剥離が観察されなかった。
△:試験後の封止シートおよび基板間に部分的な剥離が観察された。具体的には、剥離は、透明層と基板との間の界面で観察された。
2 透明層
3 蛍光封止層
4 凹部
10発光ダイオード装置
11発光ダイオード素子
Claims (7)
- 表面から内方に向かって凹む凹部が形成される透明層と、
前記凹部に充填される蛍光封止層と
を備え、
前記透明層が、第1のシリコーン樹脂組成物を含む透明組成物から形成され、
前記蛍光封止層が、蛍光体と、第2のシリコーン樹脂組成物とを含む蛍光封止組成物から形成されている
ことを特徴とする、封止シート。 - 前記第1のシリコーン樹脂組成物および/または前記第2のシリコーン樹脂組成物が、熱硬化性シリコーン樹脂組成物である
ことを特徴とする、請求項1に記載の封止シート。 - 前記熱硬化性シリコーン樹脂組成物が、最終硬化前の熱硬化性シリコーン樹脂組成物である
ことを特徴とする、請求項2に記載の封止シート。 - 前記透明層における最終硬化前の前記熱硬化性シリコーン樹脂組成物が、2段階硬化型シリコーン樹脂組成物の1段階硬化体である
ことを特徴とする、請求項3に記載の封止シート。 - 前記蛍光封止層における最終硬化前の前記熱硬化性シリコーン樹脂組成物が、2段階硬化型シリコーン樹脂組成物の1段階硬化体、および/または、熱可塑性および熱硬化性を併有するシリコーン樹脂組成物の熱可塑体である
ことを特徴とする、請求項3または4に記載の封止シート。 - 発光ダイオード素子を封止シートによって封止する発光ダイオード装置の製造方法であって、
請求項1〜5のいずれか一項に記載の封止シートを用意する工程、および、
前記発光ダイオード素子を前記封止シートの前記蛍光封止層に埋設する工程
を備えることを特徴とする、発光ダイオード装置の製造方法。 - 請求項6に記載の発光ダイオード装置の製造方法により製造されたことを特徴とする、発光ダイオード装置。
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US13/784,013 US8937329B2 (en) | 2012-03-06 | 2013-03-04 | Encapsulating sheet, light emitting diode device, and producing method thereof |
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TW102107940A TW201338217A (zh) | 2012-03-06 | 2013-03-06 | 密封片、發光二極體裝置及其製造方法 |
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TW201338217A (zh) | 2013-09-16 |
KR20130102009A (ko) | 2013-09-16 |
US20130234186A1 (en) | 2013-09-12 |
JP6033557B2 (ja) | 2016-11-30 |
US20150087095A1 (en) | 2015-03-26 |
US8937329B2 (en) | 2015-01-20 |
EP2637225A1 (en) | 2013-09-11 |
CN103311404A (zh) | 2013-09-18 |
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