JP2013131592A - リード端子およびこれを用いた半導体装置 - Google Patents

リード端子およびこれを用いた半導体装置 Download PDF

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Publication number
JP2013131592A
JP2013131592A JP2011279295A JP2011279295A JP2013131592A JP 2013131592 A JP2013131592 A JP 2013131592A JP 2011279295 A JP2011279295 A JP 2011279295A JP 2011279295 A JP2011279295 A JP 2011279295A JP 2013131592 A JP2013131592 A JP 2013131592A
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Prior art keywords
bonding
semiconductor device
lead terminal
main conductive
semiconductor elements
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Japanese (ja)
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JP2013131592A5 (enExample
Inventor
Hiroaki Tatsumi
裕章 巽
Kenichi Hayashi
建一 林
Taketsugu Otsu
健嗣 大津
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2011279295A priority Critical patent/JP2013131592A/ja
Publication of JP2013131592A publication Critical patent/JP2013131592A/ja
Publication of JP2013131592A5 publication Critical patent/JP2013131592A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/77—Apparatus for connecting with strap connectors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
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    • H01L2224/75315—Elastomer inlay
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
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    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/8485—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/1025—Semiconducting materials
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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    • H01L2924/1305—Bipolar Junction Transistor [BJT]
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
JP2011279295A 2011-12-21 2011-12-21 リード端子およびこれを用いた半導体装置 Pending JP2013131592A (ja)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015153966A (ja) * 2014-02-18 2015-08-24 三菱電機株式会社 半導体装置および半導体装置の製造方法
JPWO2016159070A1 (ja) * 2015-04-03 2017-06-22 三菱電機株式会社 半導体素子の接合方法及び半導体素子接合用シート状積層緩衝材
JP2019071448A (ja) * 2014-10-21 2019-05-09 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 電子装置、及び電子装置を製造する方法
CN112041972A (zh) * 2018-04-27 2020-12-04 日东电工株式会社 半导体装置制造方法
DE102022124463A1 (de) 2021-11-16 2023-05-17 Mitsubishi Electric Corporation Halbleitervorrichtung
WO2023190180A1 (ja) * 2022-03-30 2023-10-05 ローム株式会社 半導体装置
US12315838B2 (en) 2020-03-13 2025-05-27 Fuji Electric Co., Ltd. Wiring structure and semiconductor module

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0742967U (ja) * 1993-12-28 1995-08-11 新電元工業株式会社 樹脂封止型半導体装置
JP2008227131A (ja) * 2007-03-13 2008-09-25 Renesas Technology Corp 半導体装置及びその製造方法
JP2013135105A (ja) * 2011-12-27 2013-07-08 Mitsubishi Electric Corp 電力用半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0742967U (ja) * 1993-12-28 1995-08-11 新電元工業株式会社 樹脂封止型半導体装置
JP2008227131A (ja) * 2007-03-13 2008-09-25 Renesas Technology Corp 半導体装置及びその製造方法
JP2013135105A (ja) * 2011-12-27 2013-07-08 Mitsubishi Electric Corp 電力用半導体装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015153966A (ja) * 2014-02-18 2015-08-24 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP2019071448A (ja) * 2014-10-21 2019-05-09 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 電子装置、及び電子装置を製造する方法
JPWO2016159070A1 (ja) * 2015-04-03 2017-06-22 三菱電機株式会社 半導体素子の接合方法及び半導体素子接合用シート状積層緩衝材
CN112041972A (zh) * 2018-04-27 2020-12-04 日东电工株式会社 半导体装置制造方法
EP3787011A4 (en) * 2018-04-27 2022-06-08 Nitto Denko Corporation SEMICONDUCTOR DEVICE MANUFACTURING PROCESS
US11594513B2 (en) 2018-04-27 2023-02-28 Nitto Denko Corporation Manufacturing method for semiconductor device
CN112041972B (zh) * 2018-04-27 2024-11-19 日东电工株式会社 半导体装置制造方法
US12315838B2 (en) 2020-03-13 2025-05-27 Fuji Electric Co., Ltd. Wiring structure and semiconductor module
DE102022124463A1 (de) 2021-11-16 2023-05-17 Mitsubishi Electric Corporation Halbleitervorrichtung
JP7657529B2 (ja) 2021-11-16 2025-04-07 三菱電機株式会社 半導体装置
US12476159B2 (en) 2021-11-16 2025-11-18 Mitsubishi Electric Corporation Semiconductor device
WO2023190180A1 (ja) * 2022-03-30 2023-10-05 ローム株式会社 半導体装置

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