JP2013109965A - 光電変換素子およびこれを含む太陽電池 - Google Patents
光電変換素子およびこれを含む太陽電池 Download PDFInfo
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- JP2013109965A JP2013109965A JP2011254284A JP2011254284A JP2013109965A JP 2013109965 A JP2013109965 A JP 2013109965A JP 2011254284 A JP2011254284 A JP 2011254284A JP 2011254284 A JP2011254284 A JP 2011254284A JP 2013109965 A JP2013109965 A JP 2013109965A
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- photoelectric conversion
- semiconductor
- conversion element
- sensitizing dye
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- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004673 propylcarbonyl group Chemical group 0.000 description 1
- 125000004309 pyranyl group Chemical group O1C(C=CC=C1)* 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 125000005400 pyridylcarbonyl group Chemical group N1=C(C=CC=C1)C(=O)* 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- JWVCLYRUEFBMGU-UHFFFAOYSA-N quinazoline Chemical compound N1=CN=CC2=CC=CC=C21 JWVCLYRUEFBMGU-UHFFFAOYSA-N 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 150000003303 ruthenium Chemical class 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- MFRIHAYPQRLWNB-UHFFFAOYSA-N sodium tert-butoxide Chemical compound [Na+].CC(C)(C)[O-] MFRIHAYPQRLWNB-UHFFFAOYSA-N 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000004646 sulfenyl group Chemical group S(*)* 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- 125000000475 sulfinyl group Chemical group [*:2]S([*:1])=O 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 239000000979 synthetic dye Substances 0.000 description 1
- 239000001040 synthetic pigment Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- ZGNPLWZYVAFUNZ-UHFFFAOYSA-N tert-butylphosphane Chemical compound CC(C)(C)P ZGNPLWZYVAFUNZ-UHFFFAOYSA-N 0.000 description 1
- KBLZDCFTQSIIOH-UHFFFAOYSA-M tetrabutylazanium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC KBLZDCFTQSIIOH-UHFFFAOYSA-M 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- YONPGGFAJWQGJC-UHFFFAOYSA-K titanium(iii) chloride Chemical compound Cl[Ti](Cl)Cl YONPGGFAJWQGJC-UHFFFAOYSA-K 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000025 triisopropylsilyl group Chemical group C(C)(C)[Si](C(C)C)(C(C)C)* 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 229920006163 vinyl copolymer Polymers 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】基体、第一電極、半導体および増感色素を含有する光電変換層、正孔輸送層、並びに第二電極を含み、前記増感色素が、下記化学式(1)で表される、光電変換素子。
【選択図】図1
Description
nは、1〜9の整数であり、nが2以上の場合には、それぞれのAr1は互いに異なっていてもよく、mは1〜9の整数であり、mが2以上の場合には、それぞれのAr2は互いに異なっていてもよく、lは1〜5の整数であり、lが2以上の場合には、それぞれのAr3は互いに異なっていてもよく、この際、m+n≧3であり、m=nの場合には、−(Ar1)n−および−(Ar2)m−は互いに異なり、
Xは、酸性基を含む1価の置換基であり、
Yは、水素原子または1価の置換基である。)
で表される、光電変換素子により達成される。
本発明の光電変換素子について、図1を参照しながら説明する。図1は、本発明の一実施形態に係る光電変換素子を模式的に表す断面図である。図1に示すように、光電変換素子10は、基体1、第一電極2、バリア層3、光電変換層6、正孔輸送層7、および第二電極8が順次積層されてなる構成を有する。ここで、光電変換層6は、半導体5および増感色素4を含有する。図1に示されるように、第一電極2と光電変換層6との間には、短絡防止、封止などの目的で、バリア層3を有していてもよい。なお、図1中では、太陽光は、図下方の矢印9の方向から入っているが、本発明は当該形態に限定されず、図上方から太陽光が入射してもよい。
基体は、電極を塗布方式で形成する場合における、塗布液の被塗布部材としての役割を有する。基体側から光が入射する場合、基体はこの光を透過させることが可能な、すなわち、光電変換すべき光の波長に対して透明な部材であることが好ましい。具体的には、光電変換効率の観点から、光透過率が10%以上であることが好ましく、50%以上であることがより好ましく、80%〜100%であることが特に好ましい。なお、本明細書において、「光透過率」とは、JIS K 7361−1:1997(ISO 13468−1:1996に対応)の「プラスチック−透明材料の全光線透過率の試験方法」に準拠した方法で測定した可視光波長領域における全光線透過率を意味するものとする。
第一電極は、基体と光電変換層との間に配置される。ここで、第一電極は、基体の光入射方向に対して反対側となる一方の面上に設けられる。第一電極は、光電変換効率の観点から、光透過率が10%以上であることが好ましく、50%以上であることがより好ましく、80%〜100%であることが特に好ましい。
バリア層は、受光により発生し、正孔輸送層に注入されたホールと、第一電極の電子との再結合である短絡を防止する観点などから、設けられる任意の構成要素である。バリア層は、第一電極と後述する光電変換層との間に、膜状(層状)に配置されうる。
光電変換層は、光起電力効果を利用して光エネルギーを電気エネルギーに変換する機能を有する。本発明において、光電変換層は半導体および増感色素を必須に含む。より詳しくは、当該光電変換層は、半導体を含有する半導体層に増感色素が担持された構成を有する。
半導体層に用いられる半導体の材料としては、シリコン、ゲルマニウムのような単体、周期表(元素周期表ともいう)の第3族〜第5族、第13族〜第15族系の元素を有する化合物、金属のカルコゲニド(例えば、酸化物、硫化物、セレン化物等)、金属窒化物等が使用されうる。金属のカルコゲニドの具体例としては、チタン、スズ、亜鉛、鉄、タングステン、ジルコニウム、ハフニウム、ストロンチウム、インジウム、セリウム、イットリウム、ランタン、バナジウム、ニオブ、またはタンタルの酸化物;カドミウム、亜鉛、鉛、銀、アンチモンまたはビスマスの硫化物;カドミウムまたは鉛のセレン化物;カドミウムのテルル化物等が挙げられる。また、その他の半導体の材料としては、亜鉛、ガリウム、インジウム、カドミウム等のリン化物;ガリウム−ヒ素または銅−インジウムのセレン化物;銅−インジウムの硫化物;チタンの窒化物等が挙げられる。より詳細には、TiO2、SnO2、Fe2O3、WO3、ZnO、Nb2O5、CdS、ZnS、PbS、Bi2S3、CdSe、CdTe、GaP、InP、GaAs、CuInS2、CuInSe2、Ti3N4等が挙げられる。これらのうち、TiO2、ZnO、SnO2、Fe2O3、WO3、Nb2O5、CdS、またはPbSを用いることが好ましく、TiO2またはNb2O5を用いることがより好ましく、TiO2(酸化チタン)を用いることが特に好ましい。これらの材料は単独で用いても、2種以上を組み合わせて用いてもよい。2種以上を組み合わせた形態としては、例えば、酸化チタン半導体に20質量%の窒化チタン(Ti3N4)を混合する形態、J.Chem.Soc.Chem.Commun.,15(1999)に記載の酸化亜鉛/酸化スズの複合の形態等が挙げられる。なお、金属酸化物または金属硫化物に、その他の半導体材料を組み合わせて使用する場合には、当該その他の半導体材料は、金属酸化物または金属硫化物半導体に対する質量比が30%以下であることが好ましい。
増感色素は、光照射時、光励起され起電力を生じる機能を有する。当該増感色素は、後述の半導体の増感処理により半導体に担持される。本発明に用いられる増感色素は下記化学式(1)で表される。
pは、0〜8の整数であり、この際、pが2以上の場合には、それぞれのAr11は互いに異なっていてもよく、qは、0〜8の整数であり、この際、qが2以上の場合には、それぞれのAr12は互いに異なっていてもよく、p+q≧1であり、p=qの場合には、−(Ar11)p−および−(Ar12)q−は互いに異なる。)
で表される芳香族基であることが、溶解性および耐久性の観点から好ましい。
次に、光電変換層の作製方法について説明する。光電変換層の作製方法は、(1)導電性支持体上への半導体層の形成、および(2)半導体の増感処理に大別される。(1)において、半導体の材料が粒子状の場合には、半導体の分散液またはコロイド溶液(半導体含有塗布液)を導電性支持体に塗布あるいは吹き付ける方法、および半導体微粒子の前駆体を導電性支持体上に塗布し、水分(例えば、空気中の水分)によって加水分解後に縮合を行う方法(ゾル−ゲル法)等によって半導体層を形成することができる。上記2つの方法によって得られた半導体層は焼成することが好ましい。また、半導体の材料が膜状であり、導電性支持体上に保持されていない場合には、半導体を導電性支持体上に貼合することによって半導体層を形成することができる。(2)の増感処理方法は、増感色素の半導体層への吸着等が挙げられる。(1)において、半導体層を焼成する場合には、焼成後、半導体に水分が吸着する前に素早く増感色素による増感処理を行うことが好ましい。
(1−1)半導体含有塗布液の調製
まず、半導体、好ましくは半導体の微粉末を含む塗布液(半導体含有塗布液)を調製する。当該半導体微粉末はその1次粒子径が微細であることが好ましい。1次粒子径としては、1〜5000nmであることが好ましく、2〜100nmであることがより好ましい。半導体含有塗布液は、半導体微粉末を溶媒中に分散させることによって調製することができ、溶媒中に分散された半導体微粉末は1次粒子状で分散する。溶媒中の半導体微粉末の濃度は0.1〜70質量%であることが好ましく、0.1〜30質量%であることがより好ましい。
上記(1−1)によって調製した半導体含有塗布液を、導電性支持体上に塗布または吹き付け、乾燥等を行うことにより、半導体層が形成される。当該塗布は、特に制限されず、ドクターブレード法、スキージ法、スピンコート法、スクリーン印刷法など公知の方法によって行われる。上記塗布または吹き付け、および乾燥によって得られた半導体層は、半導体微粒子の集合体からなるものであり、その微粒子の粒径は使用した半導体微粉末の1次粒子径に対応する。なお、半導体含有塗布液は2種以上の半導体材料を含むものであってもよいし、2種以上の半導体材料を用いて塗布または吹き付けを行い、層状構造の半導体層を形成してもよい。
上記(1−2)によって形成された半導体層は、空気中または不活性ガス中で焼成することが好ましい。焼成を行うことにより、(1−2)で形成された半導体層と導電性支持体との結合力および半導体微粒子どうしの結合力を高め、機械的強度が向上しうる。焼成条件は、所望の実表面積や空孔率を有する半導体層を形成することができれば特に制限されない。焼成温度は、特に制限されないが、1000℃以下であることが好ましく、100〜800℃であることがより好ましく、200〜600℃であることが特に好ましい。また、基体がプラスチック等で耐熱性に劣る場合には、加圧により半導体微粒子−基体間および半導体微粒子どうしを固着させてもよいし、マイクロ波を用いて半導体層のみを焼成してもよい。焼成時間も特に制限されないが、10秒〜12時間であることが好ましく、1〜240分であることがより好ましく、10〜120分であることが特に好ましい。また、焼成雰囲気も特に制限されないが、通常、焼成工程は、大気中または不活性ガス(例えば、アルゴン、ヘリウム、窒素など)雰囲気中で行われる。なお、上記焼成は、単一の温度で1回のみ行ってもよいし、温度や時間を変化させて2回以上繰り返し行ってもよい。
増感色素による半導体の増感処理は、例えば、増感色素を適切な溶媒に溶解し、当該溶液中によく乾燥させた半導体層を長時間浸漬することによって行われる。当該増感処理によって、増感色素が半導体に吸着されうる。この際、半導体層が多孔質構造を有する場合には、浸漬前に減圧処理、加熱処理等の前処理を行い、膜中の気泡や空隙中の水分を除去することが好ましい。当該前処理によって、増感色素が半導体層内部にも吸着されうる。なお、増感処理は、増感色素含有溶液への半導体層の浸漬に限定されず、その他の公知の増感処理方法も適宜適用することができる。
正孔輸送層は、光励起によって酸化された増感色素に電子を供給して還元し、増感色素との界面で生じた正孔を第二電極へ輸送する機能を有する。正孔輸送層は、多孔質の半導体層上に形成された層状部分だけでなく、多孔質の半導体層の空隙内部に充填されうる。
第二電極は、正孔輸送層と接して配置され、任意の導電性材料で構成されうる。絶縁性の物質でも、正孔輸送層に面している側に導電性物質層が設置されていれば、これも使用することができる。第二電極は、素子の電気抵抗を低減する等の観点から、正孔輸送層との接触が良好であることが好ましい。また、第二電極は、正孔輸送層との仕事関数の差が小さく、化学的に安定であることが好ましい。このような材料としては、特に制限されないが、金、銀、銅、アルミニウム、白金、クロム、ロジウム、ルテニウム、マグネシウム、インジウム等の金属薄膜、炭素、カーボンブラック、導電性高分子、導電性の金属酸化物(インジウム−スズ複合酸化物、酸化スズにフッ素をドープしたもの等)等の有機導電体などが挙げられる。好ましくは金などの金属薄膜である。また、第二電極の厚みは、特に制限されないが、10〜1000nmであることが好ましい。また、第二電極の表面抵抗値は、特に制限されず、可能な限り低い値であることが好ましい。具体的には、表面抵抗値は、80Ω/□以下であることが好ましく、20Ω/□以下であることがより好ましい。
本発明に係る光電変換素子は、太陽電池に特に好適に使用することができる。したがって、本発明は、本発明に係る光電変換素子を有することを特徴とする太陽電池をも提供する。
化合物15を下記スキームにより合成した。
合成例1の合成法に芳香族求電子置換反応、芳香族求核置換反応、カップリング反応、およびメタセシス反応等を適宜組み合わせて、本発明に係る化合物1、2、4、8〜10、12、16、19、20、22、24、28、30、33、34、35、37、41、および42を合成した。
上記と同様に適宜化学反応を組み合わせて、上記一般式(1)においてXが異なる化合物101〜104を合成した。化合物101〜104を下記に示す。
基体としてガラス基体(厚さ:1.0mm)を、第一電極としてフッ素ドープ酸化スズ(FTO)(500nm光透過率:80%)を用いて導電性支持体を形成した(膜厚:0.1mm、表面抵抗値:9.0Ω/□)。半導体として酸化チタン(アナターゼ型(粉末状)、1次平均粒径:18nm(電子顕微鏡により観察した平均値))を用い、ポリエチレングリコールの分散液(酸化チタンの濃度:10質量%)である酸化チタンペーストを前記FTOからなる導電性ガラス基体にスクリーン印刷法により塗布(塗布面積:5×5mm2)および乾燥(120℃で3分間)した。当該塗布および乾燥を5回繰り返した後、200℃で10分間、次いで500℃で15分間の焼成を空気中で行い、厚さ13μmの酸化チタン薄膜を得た。この薄膜上に、さらに酸化チタン(アナターゼ型、1次平均粒径:400nm(電子顕微鏡により観察した平均値))のポリエチレングリコール分散ペーストを同様の方法で塗布、乾燥、および焼成し、厚さ3μmの酸化チタン薄膜を形成し、層厚膜16μmの半導体層を形成した。
増感色素として合成例で合成した化合物2、4、8〜10、12、15、16、19、20、22、24、28、30、33、34、35、37、41、および42を用いたことを除いては、実施例1と同様の方法で光電変換素子2〜21を作製した。
増感色素として合成例で合成した化合物101〜103を用いたことを除いては、実施例1と同様の方法で光電変換素子22〜24を作成した。
実施例1に記載のFTO導電性ガラス基体上に、酸化チタン(アナターゼ型、1次平均粒径:18nm(電子顕微鏡により観察した平均値))のポリエチレングリコール分散ペーストをスクリーン印刷法により塗布(塗布面積:5×5mm2)した。次に、200℃で10分間、次いで450℃で15分間の焼成を空気中で行い、厚さ1.5μmの酸化チタン薄膜を得た。
増感色素として合成例で合成した化合物2、4、8、12、22、30、34、35、および37を用いたことを除いては、実施例22と同様の方法で光電変換素子26〜34を作製した。
増感色素として合成例で合成した化合物101〜103を用いたことを除いては、実施例22と同様の方法で光電変換素子35〜37を作成した。
正孔輸送層を電解重合によって形成したことを除いては、実施例22と同様の方法で光電変換素子38を作製した。当該電解重合は、正孔輸送材料の原料となるモノマーである2,2’−ビス−3,4−エチレンジオキシチオフェンおよびLi[(CF3SO2)2N]を含有するアセトニトリル溶液(電解重合溶液;2,2’−ビス−3,4−エチレンジオキシチオフェン濃度:1×10−3mol/L、Li[(CF3SO2)2N]濃度:0.1mol/L)に浸漬した。作用極を上記半導体電極、対極を白金線、参照電極をAg/Ag+(AgNO3 0.01M)、印加電流密度150μA/cm2、保持電圧を−0.3Vとした。半導体層方向から光を照射しながら(キセノンランプ使用、光強度32mW/cm2、520nm以下の波長をカット)15分間電圧を保持して、正孔輸送層を上記半導体電極表面に形成した。得られた半導体電極/正孔輸送層をアセトニトリルで洗浄、乾燥した。
増感色素として合成例で合成した化合物2、4、8、12、22、30、34、35、および37を用いたことを除いては、実施例32と同様の方法で光電変換素子39〜47を作製した。
増感色素として合成例で合成した化合物101〜104を用いたことを除いては、実施例32と同様の方法で光電変換素子48〜51を作成した。
<初期の光電変換効率の測定>
ソーラーシミュレータ(英弘精機製)を用いて、上記光電変換素子に、キセノンランプからAMフィルター(AM−1.5)を通して強度100mW/cm2の擬似太陽光を照射した。そして、I−Vテスターを用いて、光電変換素子の室温(25℃)での電流−電圧特性を測定し、短絡電流密度(Jsc)、開放電圧(Voc)、および形状因子(F.F.)を測定した。これらの値に基づき、下記式1から光電変換効率η(%)を算出した。
実施例1〜41および比較例1〜10において、増感色素を吸着して得られた光電変換層を用いて光電変換素子を作製する前に、得られた光電変換層をアセトニトリル:tert−ブチルアルコール=1:1の混合溶媒に室温で3時間浸漬し、光電変換層の強制劣化を行った。そして、強制劣化させた光電変換層を用いて光電変換素子を作製した。
2 第一電極
3 バリア層
4 増感色素
5 半導体
6 光電変換層
7 正孔輸送層
8 第二電極
9 太陽光
10 光電変換素子
Claims (4)
- 基体、第一電極、半導体および増感色素を含有する光電変換層、正孔輸送層、並びに第二電極を含み、前記増感色素が、下記化学式(1):
nは、1〜9の整数であり、nが2以上の場合には、それぞれのAr1は互いに異なっていてもよく、mは1〜9の整数であり、mが2以上の場合には、それぞれのAr2は互いに異なっていてもよく、lは1〜5の整数であり、lが2以上の場合には、それぞれのAr3は互いに異なっていてもよく、この際、m+n≧3であり、m=nの場合には、−(Ar1)n−および−(Ar2)m−は互いに異なり、
Xは、酸性基を含む1価の置換基であり、
Yは、水素原子または1価の置換基である。)
で表される、光電変換素子。 - 前記増感色素が下記化学式(2):
pは、0〜8の整数であり、この際、pが2以上の場合には、それぞれのAr11は互いに異なっていてもよく、qは、0〜8の整数であり、この際、qが2以上の場合には、それぞれのAr12は互いに異なっていてもよく、p+q≧1であり、p=qの場合には、−(Ar11)p−および−(Ar12)q−は互いに異なる。)
で表される、請求項1に記載の光電変換素子。 - 前記半導体が、酸化チタンである、請求項1または2に記載の光電変換素子。
- 請求項1〜3のいずれか1項に記載の光電変換素子を含む、太陽電池。
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WO2015125587A1 (ja) * | 2014-02-24 | 2015-08-27 | 株式会社リコー | 光電変換素子及び太陽電池 |
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JPWO2015068683A1 (ja) * | 2013-11-07 | 2017-03-09 | 積水化学工業株式会社 | 半導体形成用塗布液、半導体薄膜、薄膜太陽電池及び薄膜太陽電池の製造方法 |
WO2015068683A1 (ja) * | 2013-11-07 | 2015-05-14 | 積水化学工業株式会社 | 半導体形成用塗布液、半導体薄膜、薄膜太陽電池及び薄膜太陽電池の製造方法 |
JP5938486B2 (ja) * | 2013-11-07 | 2016-06-22 | 積水化学工業株式会社 | 半導体形成用塗布液、半導体薄膜、薄膜太陽電池及び薄膜太陽電池の製造方法 |
US10636579B2 (en) | 2014-02-24 | 2020-04-28 | Ricoh Company, Ltd. | Photoelectric conversion element and solar cell |
JPWO2015125587A1 (ja) * | 2014-02-24 | 2017-03-30 | 株式会社リコー | 光電変換素子及び太陽電池 |
CN110690350A (zh) * | 2014-02-24 | 2020-01-14 | 株式会社理光 | 光电转换元件和太阳能电池 |
WO2015125587A1 (ja) * | 2014-02-24 | 2015-08-27 | 株式会社リコー | 光電変換素子及び太陽電池 |
KR20210073610A (ko) * | 2014-02-24 | 2021-06-18 | 가부시키가이샤 리코 | 광전 변환 소자 및 태양 전지 |
US11101080B2 (en) | 2014-02-24 | 2021-08-24 | Ricoh Company, Ltd. | Photoelectric conversion element and solar cell |
KR102330122B1 (ko) | 2014-02-24 | 2021-11-24 | 가부시키가이샤 리코 | 광전 변환 소자 및 태양 전지 |
JP2020202395A (ja) * | 2015-03-20 | 2020-12-17 | 株式会社リコー | 光電変換素子、及び太陽電池 |
JP7092979B2 (ja) | 2015-03-20 | 2022-06-29 | 株式会社リコー | 光電変換素子、及び太陽電池 |
JP2019059824A (ja) * | 2017-09-26 | 2019-04-18 | 保土谷化学工業株式会社 | 増感色素、光電変換用増感色素およびそれを用いた光電変換素子ならびに色素増感太陽電池 |
JP7055292B2 (ja) | 2017-09-26 | 2022-04-18 | 保土谷化学工業株式会社 | 増感色素、光電変換用増感色素およびそれを用いた光電変換素子ならびに色素増感太陽電池 |
JP2019197800A (ja) * | 2018-05-09 | 2019-11-14 | シャープ株式会社 | 光電変換素子の製造方法 |
JP7072437B2 (ja) | 2018-05-09 | 2022-05-20 | シャープ株式会社 | 光電変換素子の製造方法 |
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