JP2013098563A - メモリ装置 - Google Patents

メモリ装置 Download PDF

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Publication number
JP2013098563A
JP2013098563A JP2012237176A JP2012237176A JP2013098563A JP 2013098563 A JP2013098563 A JP 2013098563A JP 2012237176 A JP2012237176 A JP 2012237176A JP 2012237176 A JP2012237176 A JP 2012237176A JP 2013098563 A JP2013098563 A JP 2013098563A
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Japan
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horizontal
memory device
vertical
conductive region
region
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Pending
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JP2012237176A
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English (en)
Japanese (ja)
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JP2013098563A5 (enExample
Inventor
Young-Nam Hwang
榮 南 黄
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2013098563A publication Critical patent/JP2013098563A/ja
Publication of JP2013098563A5 publication Critical patent/JP2013098563A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

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  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2012237176A 2011-10-28 2012-10-26 メモリ装置 Pending JP2013098563A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0111235 2011-10-28
KR20110111235A KR20130046700A (ko) 2011-10-28 2011-10-28 3차원적으로 배열된 메모리 요소들을 구비하는 반도체 장치

Publications (2)

Publication Number Publication Date
JP2013098563A true JP2013098563A (ja) 2013-05-20
JP2013098563A5 JP2013098563A5 (enExample) 2015-12-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012237176A Pending JP2013098563A (ja) 2011-10-28 2012-10-26 メモリ装置

Country Status (4)

Country Link
US (1) US9093370B2 (enExample)
JP (1) JP2013098563A (enExample)
KR (1) KR20130046700A (enExample)
CN (1) CN103094302B (enExample)

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JP2015005622A (ja) * 2013-06-20 2015-01-08 株式会社東芝 半導体素子及び半導体装置
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JP2017532767A (ja) * 2014-09-26 2017-11-02 インテル・コーポレーション ３ｄ回路におけるソース・チャネルの相互作用の改善
JP2021520644A (ja) * 2018-04-24 2021-08-19 マイクロン テクノロジー，インク． クロスポイントメモリアレイおよび関連する製造技法
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KR20230124701A (ko) * 2020-12-25 2023-08-25 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 반도체 소자를 사용한 메모리 장치
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KR20140113024A (ko) * 2013-03-15 2014-09-24 에스케이하이닉스 주식회사 저항 변화 메모리 장치 및 그 구동방법
KR102155761B1 (ko) * 2014-01-02 2020-09-14 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
KR102234799B1 (ko) * 2014-08-14 2021-04-02 삼성전자주식회사 반도체 장치
KR20160145322A (ko) * 2015-06-10 2016-12-20 에스케이하이닉스 주식회사 전자 장치
KR102220421B1 (ko) * 2015-08-26 2021-02-25 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102789289B1 (ko) 2016-04-18 2025-04-01 삼성전자주식회사 반도체 메모리 장치 및 반도체 장치
US9728266B1 (en) 2016-07-08 2017-08-08 Micron Technology, Inc. Memory device including multiple select gates and different bias conditions
US9865311B1 (en) 2016-07-08 2018-01-09 Micron Technology, Inc. Memory device including current generator plate
CN108133939B (zh) * 2016-12-01 2020-04-07 旺宏电子股份有限公司 三维半导体元件及其制造方法
KR102323249B1 (ko) * 2017-03-28 2021-11-08 삼성전자주식회사 정보 저장 패턴을 포함하는 반도체 소자
US20190296228A1 (en) * 2018-03-23 2019-09-26 Spin Transfer Technologies, Inc. Three-Dimensional Arrays with Magnetic Tunnel Junction Devices Including an Annular Free Magnetic Layer and a Planar Reference Magnetic Layer
US10700129B2 (en) * 2018-06-22 2020-06-30 International Business Machines Corporation Vertical array of resistive switching devices having a tunable oxygen vacancy concentration
CN109524543B (zh) * 2018-09-18 2019-11-22 华中科技大学 一种三维堆叠相变存储器及其制备方法
US10833127B2 (en) * 2019-03-06 2020-11-10 International Business Machines Corporation Three-dimensional and planar memory device co-integration
US11211395B2 (en) * 2019-08-30 2021-12-28 Macronix International Co., Ltd. 3D memory array having select lines
US11545524B2 (en) * 2020-01-09 2023-01-03 Integrated Silicon Solution, (Cayman) Inc. Selector transistor with continuously variable current drive
KR102816615B1 (ko) 2020-07-23 2025-06-04 삼성전자주식회사 수직형 가변 저항 메모리 장치
CN112768489B (zh) * 2021-02-04 2021-11-09 长江先进存储产业创新中心有限责任公司 相变存储器及其制作方法
JP2023137703A (ja) 2022-03-18 2023-09-29 キオクシア株式会社 メモリデバイス
CN117912505A (zh) * 2022-10-11 2024-04-19 华为技术有限公司 存储芯片、存储设备和电子设备

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JP2015005622A (ja) * 2013-06-20 2015-01-08 株式会社東芝 半導体素子及び半導体装置
JP2017532767A (ja) * 2014-09-26 2017-11-02 インテル・コーポレーション ３ｄ回路におけるソース・チャネルの相互作用の改善
US9748268B1 (en) 2016-09-07 2017-08-29 Kabushiki Kaisha Toshiba Semiconductor memory device
JP2021520644A (ja) * 2018-04-24 2021-08-19 マイクロン テクノロジー，インク． クロスポイントメモリアレイおよび関連する製造技法
JP7138722B2 (ja) 2018-04-24 2022-09-16 マイクロン テクノロジー，インク． クロスポイントメモリアレイおよび関連する製造技法
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KR20230124701A (ko) * 2020-12-25 2023-08-25 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 반도체 소자를 사용한 메모리 장치
KR102752876B1 (ko) 2020-12-25 2025-01-09 유니산티스 일렉트로닉스 싱가포르 프라이빗 리미티드 반도체 소자를 사용한 메모리 장치

Also Published As

Publication number Publication date
KR20130046700A (ko) 2013-05-08
CN103094302B (zh) 2018-05-08
US9093370B2 (en) 2015-07-28
CN103094302A (zh) 2013-05-08
US20130105876A1 (en) 2013-05-02

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