KR20130046700A - 3차원적으로 배열된 메모리 요소들을 구비하는 반도체 장치 - Google Patents

3차원적으로 배열된 메모리 요소들을 구비하는 반도체 장치 Download PDF

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Publication number
KR20130046700A
KR20130046700A KR20110111235A KR20110111235A KR20130046700A KR 20130046700 A KR20130046700 A KR 20130046700A KR 20110111235 A KR20110111235 A KR 20110111235A KR 20110111235 A KR20110111235 A KR 20110111235A KR 20130046700 A KR20130046700 A KR 20130046700A
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South Korea
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electrodes
vertical
semiconductor
selection
horizontal
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Korean (ko)
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황영남
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삼성전자주식회사
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Priority to KR20110111235A priority Critical patent/KR20130046700A/ko
Priority to US13/611,382 priority patent/US9093370B2/en
Priority to JP2012237176A priority patent/JP2013098563A/ja
Priority to CN201210421134.1A priority patent/CN103094302B/zh
Publication of KR20130046700A publication Critical patent/KR20130046700A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

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  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR20110111235A 2011-10-28 2011-10-28 3차원적으로 배열된 메모리 요소들을 구비하는 반도체 장치 Withdrawn KR20130046700A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR20110111235A KR20130046700A (ko) 2011-10-28 2011-10-28 3차원적으로 배열된 메모리 요소들을 구비하는 반도체 장치
US13/611,382 US9093370B2 (en) 2011-10-28 2012-09-12 Memory devices with three-dimensional selection structures for memory cell arrays
JP2012237176A JP2013098563A (ja) 2011-10-28 2012-10-26 メモリ装置
CN201210421134.1A CN103094302B (zh) 2011-10-28 2012-10-29 用于存储单元阵列的具有三维选择结构的存储器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20110111235A KR20130046700A (ko) 2011-10-28 2011-10-28 3차원적으로 배열된 메모리 요소들을 구비하는 반도체 장치

Publications (1)

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KR20130046700A true KR20130046700A (ko) 2013-05-08

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KR20110111235A Withdrawn KR20130046700A (ko) 2011-10-28 2011-10-28 3차원적으로 배열된 메모리 요소들을 구비하는 반도체 장치

Country Status (4)

Country Link
US (1) US9093370B2 (enExample)
JP (1) JP2013098563A (enExample)
KR (1) KR20130046700A (enExample)
CN (1) CN103094302B (enExample)

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KR20220098804A (ko) * 2018-04-24 2022-07-12 마이크론 테크놀로지, 인크 교차점 메모리 어레이 및 관련 제조 기술
US11706934B2 (en) 2018-04-24 2023-07-18 Micron Technology, Inc. Cross-point memory array and related fabrication techniques
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KR20220098804A (ko) * 2018-04-24 2022-07-12 마이크론 테크놀로지, 인크 교차점 메모리 어레이 및 관련 제조 기술
US11706934B2 (en) 2018-04-24 2023-07-18 Micron Technology, Inc. Cross-point memory array and related fabrication techniques
US12035543B2 (en) 2018-04-24 2024-07-09 Micron Technology, Inc. Cross-point memory array with access lines
US12087758B2 (en) 2018-04-24 2024-09-10 Micron Technology, Inc. Buried lines and related fabrication techniques

Also Published As

Publication number Publication date
CN103094302B (zh) 2018-05-08
US9093370B2 (en) 2015-07-28
JP2013098563A (ja) 2013-05-20
CN103094302A (zh) 2013-05-08
US20130105876A1 (en) 2013-05-02

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