JP2013038121A - 電力増幅器 - Google Patents
電力増幅器 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000005468 ion implantation Methods 0.000 claims abstract description 43
- 230000010355 oscillation Effects 0.000 abstract description 21
- 238000010586 diagram Methods 0.000 description 3
- 238000012850 discrimination method Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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Abstract
【解決手段】本願の発明に係る電力増幅器10は、複数のトランジスタセルが形成された半導体基板12と、該半導体基板上に形成された、該複数のトランジスタセルのドレイン電極40と、該半導体基板上に該ドレイン電極と接続されるように形成された、ドレインパッド42と、該半導体基板に、該ドレインパッドに沿って該ドレインパッドと接するように形成されたイオン注入抵抗44と、該半導体基板上に該イオン注入抵抗を介して該ドレインパッドと接するように形成されたフローティング電極46と、該半導体基板の外部に形成された出力整合回路16と、該ドレインパッドと該出力整合回路を接続する配線18a,18b,18c,18dと、を備える。
【選択図】図2
Description
図1は、本発明の実施の形態1に係る電力増幅器の回路図である。電力増幅器10は半導体基板12を備えている。半導体基板12はGaNで形成されたチップである。半導体基板12には、複数のトランジスタセルが形成されている。複数のトランジスタセルとは、第1トランジスタセル12a、第1トランジスタセル12aと隣接した第2トランジスタセル12b、第2トランジスタセル12bと隣接した第3トランジスタセル12c、及び第3トランジスタセル12cと隣接した第4トランジスタセル12dのことをいう。複数のトランジスタセル12a、12b、12c、12dは電界効果トランジスタ(FET)で形成されている。複数のトランジスタセル12a、12b、12c、12dは、電力増幅器10の高周波特性を維持しつつ高出力を得るために、電力増幅器の入出力間に並列に接続されている。
本発明の実施の形態2に係る電力増幅器は、本発明の実施の形態1に係る電力増幅器と共通点が多いため、本発明の実施の形態1に係る電力増幅器との相違点を中心に説明する。図5は、本発明の実施の形態2に係る半導体基板と出力整合回路を示す平面図である。
本発明の実施の形態3に係る電力増幅器は、本発明の実施の形態1に係る電力増幅器と共通点が多いため、本発明の実施の形態1に係る電力増幅器との相違点を中心に説明する。図6は、本発明の実施の形態3に係る半導体基板と出力整合回路を示す平面図である。
本発明の実施の形態4に係る電力増幅器は、本発明の実施の形態3に係る電力増幅器と共通点が多いため、本発明の実施の形態3に係る電力増幅器との相違点を中心に説明する。図7は、本発明の実施の形態4に係る半導体基板と出力整合回路を示す平面図である。
Claims (5)
- 複数のトランジスタセルが形成された半導体基板と、
前記半導体基板上に形成された、前記複数のトランジスタセルのドレイン電極と、
前記半導体基板上に前記ドレイン電極と接続されるように形成された、ドレインパッドと、
前記半導体基板に、前記ドレインパッドに沿って前記ドレインパッドと接するように形成されたイオン注入抵抗と、
前記半導体基板上に前記イオン注入抵抗を介して前記ドレインパッドと接するように形成されたフローティング電極と、
前記半導体基板の外部に形成された出力整合回路と、
前記ドレインパッドと前記出力整合回路を接続する配線と、
を備えたことを特徴とする電力増幅器。 - 前記半導体基板に前記フローティング電極を介して前記イオン注入抵抗と接するように形成された追加イオン注入抵抗と、
前記半導体基板上に前記追加イオン注入抵抗を介して前記フローティング電極と接するように形成された追加フローティング電極と、を備えたことを特徴とする請求項1に記載の電力増幅器。 - 前記複数のトランジスタセルは、第1トランジスタセルと、前記第1トランジスタセルと隣接する第2トランジスタセルと、を有し、
前記ドレインパッドは、前記第1トランジスタセルのドレインパッドである第1ドレインパッドと、前記第2トランジスタセルのドレインパッドである、前記第1ドレインパッドとは分離して形成された第2ドレインパッドと、を有し、
前記第1ドレインパッドと前記第2ドレインパッドは前記イオン注入抵抗を介して接続されたことを特徴とする請求項1に記載の電力増幅器。 - 前記イオン注入抵抗は、前記第1ドレインパッドと前記第2ドレインパッドの間にまで伸びるように形成されたことを特徴とする請求項3に記載の電力増幅器。
- 前記半導体基板はGaNで形成されたことを特徴とする請求項1乃至4のいずれか1項に記載の電力増幅器。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011170860A JP5853477B2 (ja) | 2011-08-04 | 2011-08-04 | 電力増幅器 |
TW101110508A TWI464862B (zh) | 2011-08-04 | 2012-03-27 | 功率放大器 |
US13/433,410 US9203357B2 (en) | 2011-08-04 | 2012-03-29 | Power amplifier |
DE102012211690A DE102012211690A1 (de) | 2011-08-04 | 2012-07-05 | Leistungsverstärker |
CN201210274868.1A CN102916662B (zh) | 2011-08-04 | 2012-08-03 | 功率放大器 |
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JP2011170860A JP5853477B2 (ja) | 2011-08-04 | 2011-08-04 | 電力増幅器 |
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JP2013038121A true JP2013038121A (ja) | 2013-02-21 |
JP2013038121A5 JP2013038121A5 (ja) | 2014-08-14 |
JP5853477B2 JP5853477B2 (ja) | 2016-02-09 |
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JP2011170860A Active JP5853477B2 (ja) | 2011-08-04 | 2011-08-04 | 電力増幅器 |
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US (1) | US9203357B2 (ja) |
JP (1) | JP5853477B2 (ja) |
CN (1) | CN102916662B (ja) |
DE (1) | DE102012211690A1 (ja) |
TW (1) | TWI464862B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9503035B2 (en) | 2013-12-18 | 2016-11-22 | Tdk Corporation | High-frequency amplifier |
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CN105089615B (zh) * | 2014-05-16 | 2018-11-20 | 中国石油化工股份有限公司 | 一种基于油藏模型的测井数据历史回归处理方法 |
JP6515714B2 (ja) * | 2015-07-14 | 2019-05-22 | 三菱電機株式会社 | トランジスタ |
EP3193364B1 (en) | 2016-01-18 | 2020-10-21 | Nexperia B.V. | Integrated resistor element and associated manufacturing method |
US10153306B2 (en) * | 2016-02-29 | 2018-12-11 | Skyworks Solutions, Inc. | Transistor layout with low aspect ratio |
US11264954B2 (en) | 2019-11-14 | 2022-03-01 | Analog Devices, Inc. | Thermal temperature sensors for power amplifiers |
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JPH0793547B2 (ja) | 1990-09-20 | 1995-10-09 | 株式会社東芝 | マイクロ波電力増幅器 |
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DE102012211690A1 (de) | 2013-02-07 |
CN102916662B (zh) | 2016-03-02 |
US20130032817A1 (en) | 2013-02-07 |
TW201324742A (zh) | 2013-06-16 |
TWI464862B (zh) | 2014-12-11 |
CN102916662A (zh) | 2013-02-06 |
JP5853477B2 (ja) | 2016-02-09 |
US9203357B2 (en) | 2015-12-01 |
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