JP2013021317A - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
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- JP2013021317A JP2013021317A JP2012135594A JP2012135594A JP2013021317A JP 2013021317 A JP2013021317 A JP 2013021317A JP 2012135594 A JP2012135594 A JP 2012135594A JP 2012135594 A JP2012135594 A JP 2012135594A JP 2013021317 A JP2013021317 A JP 2013021317A
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- oxide semiconductor
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- oxide
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- 239000010980 sapphire Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Abstract
【解決手段】酸化物半導体層を有するトランジスタにおいて、少なくともチャネル形成領域となる、酸化物半導体層の一部をエッチングによって部分的に薄くし、そのエッチングによってチャネル形成領域の膜厚を調節する。また、酸化物半導体層の厚い領域に、リン(P)、またはホウ素(B)を含むドーパントを導入し、ソース領域、及びドレイン領域を酸化物半導体層中に形成することにより、ソース領域、及びドレイン領域と接続するチャネル形成領域とのコンタクト抵抗を低くする。
【選択図】図1
Description
本実施の形態では、半導体装置の一形態を、図1(A)乃至図1(C)を用いて説明する。本実施の形態では、半導体装置の一例として酸化物半導体層を有するトランジスタの断面図を示す。
本実施の形態においては、実施の形態1の図1(A)に示したトランジスタ140の作製方法について、図2、及び図3を用いて、詳細に説明を行う。なお、図1で示した符号については、同様の符号を用い、その繰り返しの説明は省略する。
本実施の形態では、先の実施の形態1の図1に示したトランジスタ140、トランジスタ150、及びトランジスタ160と異なる形態について図4を用いて説明する。本実施の形態では、半導体装置の一例として酸化物半導体層を有するトランジスタの断面図を示す。なお、図1で示した符号については、同様の符号を用い、その繰り返しの説明は省略する。
本実施の形態においては、実施の形態3の図4(A)に示したトランジスタ170の作製方法について、図5、及び図6を用いて、詳細に説明を行う。なお、図4(A)で示した符号については、同様の符号を用い、その繰り返しの説明は省略する。
実施の形態1乃至実施の形態4のいずれかで一例を示したトランジスタは、複数のトランジスタを積層する集積回路を有する半導体装置に好適に用いることができる。本実施の形態では、半導体装置の一例として、記憶媒体(メモリ素子)の例を図7を用いて説明する。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。上記実施の形態で説明した半導体装置を具備する電子機器の例について説明する。
104 酸化物絶縁層
105 酸化物半導体層
106 酸化物半導体層
107 金属層
108a 金属層
108b 金属層
110 ゲート絶縁層
112 ゲート電極層
114a ソース領域
114b ドレイン領域
116 低抵抗領域
118 チャネル形成領域
120 保護層
122a 配線層
122b 配線層
124 レジストマスク
125 レジストマスク
126 酸素
128 ドーパント
140 トランジスタ
150 トランジスタ
160 トランジスタ
170 トランジスタ
180 トランジスタ
506 素子分離絶縁層
508 ゲート絶縁層
510 ゲート電極層
516 チャネル形成領域
520 不純物領域
524 金属化合物領域
528 絶縁層
530 絶縁層
540 トランジスタ
542a 金属層
542b 金属層
543 接続電極層
544 酸化物半導体層
546 ゲート絶縁層
548 ゲート電極層
549 容量配線層
552 保護層
562 トランジスタ
564 容量素子
570 チャネル形成領域
572 低抵抗領域
574 ソース領域
576 ドレイン領域
580a 配線層
580b 配線層
582 絶縁層
584 配線層
585 基板
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカー
2800 筐体
2801 筐体
2802 表示パネル
2803 スピーカー
2804 マイクロフォン
2805 操作キー
2806 ポインティングデバイス
2807 カメラ用レンズ
2808 外部接続端子
2810 太陽電池セル
2811 外部メモリスロット
3001 本体
3002 筐体
3003 表示部
3004 キーボード
3021 本体
3022 スタイラス
3023 表示部
3024 操作ボタン
3025 外部インターフェイス
3051 本体
3053 接眼部
3054 操作スイッチ
3055 表示部(B)
3056 バッテリー
3057 表示部(A)
9601 筐体
9603 表示部
9605 スタンド
Claims (12)
- 酸化物絶縁表面上に酸化物半導体層と、
前記酸化物半導体層上にゲート絶縁層と、
前記ゲート絶縁層上にゲート電極層と、
前記酸化物半導体層の一部にソース領域、及びドレイン領域と、を有し、
前記酸化物半導体層は、前記ゲート電極層と重なる領域の膜厚が前記ソース領域、及び前記ドレイン領域が形成される領域の膜厚よりも薄い
ことを特徴とする半導体装置。 - 請求項1において、
前記酸化物半導体層の薄い領域は、前記ゲート電極層と重なるチャネル形成領域を含む
ことを特徴とする半導体装置。 - 酸化物絶縁表面上に酸化物半導体層と、
前記酸化物半導体層上にゲート絶縁層と、
前記ゲート絶縁層上にゲート電極層と、
前記酸化物半導体層の一部にソース領域、及びドレイン領域と、を有し、
前記酸化物半導体層は、前記ゲート電極層と重なる領域の膜厚が前記ソース領域、及び前記ドレイン領域が形成される領域の膜厚よりも薄く、
前記酸化物半導体層の薄い領域は、前記ゲート電極層と重なるチャネル形成領域と、前記チャネル形成領域と接し、且つ前記チャネル形成領域よりも抵抗が低い低抵抗領域と、を含み、
前記低抵抗領域は、リンまたはホウ素を含む
ことを特徴とする半導体装置。 - 酸化物絶縁表面上に酸化物半導体層と、
前記酸化物半導体層上にゲート絶縁層と、
前記ゲート絶縁層上にゲート電極層と、
前記酸化物半導体層の一部にソース領域、及びドレイン領域と、を有し、
前記酸化物半導体層は、前記ゲート電極層と重なる領域の膜厚が前記ソース領域、及び前記ドレイン領域が形成される領域の膜厚よりも薄く、
前記酸化物半導体層の薄い領域は、前記ゲート電極層と重なるチャネル形成領域を含み、
前記前記酸化物半導体層の薄い領域の端部は、前記ゲート電極層の端部と等しい
ことを特徴とする半導体装置。 - 請求項1乃至請求項4のいずれか一において、
さらに前記ゲート電極層を覆う保護層を有し、
前記保護層上に前記ソース領域、及び前記ドレイン領域に接する配線層が形成される
ことを特徴とする半導体装置。 - 請求項1乃至請求項5のいずれか一において、
さらに前記ソース領域、及び前記ドレイン領域と接する金属層を有する
ことを特徴とする半導体装置。 - 請求項6において、
前記金属層の端部は、前記酸化物半導体層の厚い領域の端部と等しい
ことを特徴とする半導体装置。 - 請求項6において、
前記金属層の端部は、前記酸化物半導体層の厚い領域の端部よりも内側に形成される
ことを特徴とする半導体装置。 - 酸化物絶縁表面上に酸化物半導体層を形成し、
前記酸化物半導体層上にマスクを形成し、
前記マスクを用いて、選択的に前記酸化物半導体層をエッチングして一部が薄い領域を形成し、
前記酸化物半導体層を覆ってゲート絶縁層を形成し、
前記ゲート絶縁層上に前記酸化物半導体層の薄い領域と重なるゲート電極層を形成する
ことを特徴とする半導体装置の作製方法。 - 酸化物絶縁表面上に酸化物半導体層を形成し、
前記酸化物半導体層上にマスクを形成し、
前記マスクを用いて、選択的に前記酸化物半導体層をエッチングして一部が薄い領域を形成し、
前記酸化物半導体層を覆ってゲート絶縁層を形成し、
前記ゲート絶縁層上に前記酸化物半導体層の薄い領域と重なるゲート電極層を形成し、
前記ゲート電極層をマスクとして、リンまたはホウ素を前記ゲート絶縁層を通過して前記酸化物半導体層に導入し、
前記酸化物半導体層の一部に、ソース領域、及びドレイン領域を形成する
ことを特徴とする半導体装置の作製方法。 - 酸化物絶縁表面上に酸化物半導体層と金属層の積層を形成し、
前記金属層上にマスクを形成し、
前記マスクを用いて、前記金属層の一部を除去した後、前記金属層をマスクとして、選択的に前記酸化物半導体層をエッチングして一部が薄い領域を形成し、
前記金属層、及び前記酸化物半導体層を覆ってゲート絶縁層を形成し、
前記ゲート絶縁層上に前記酸化物半導体層の薄い領域と重なるゲート電極層を形成し、
前記ゲート電極層をマスクとして、リンまたはホウ素を前記ゲート絶縁層、及び前記金属層を通過して前記酸化物半導体層に導入し、
前記酸化物半導体層の一部に、ソース領域、及びドレイン領域を形成する
ことを特徴とする半導体装置の作製方法。 - 請求項9乃至請求項11において、
前記ゲート絶縁層を形成した後、前記ゲート絶縁層を通過して前記酸化物半導体層に酸素を導入する
ことを特徴とする半導体装置の作製方法。
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Cited By (9)
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KR20140131264A (ko) * | 2013-05-02 | 2014-11-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2014188617A1 (ja) * | 2013-05-21 | 2014-11-27 | 独立行政法人産業技術総合研究所 | 半導体装置および半導体装置の製造方法 |
JP2015204368A (ja) * | 2014-04-14 | 2015-11-16 | 日本放送協会 | 薄膜トランジスタおよび表示装置 |
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Also Published As
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JP2017183739A (ja) | 2017-10-05 |
TW201301406A (zh) | 2013-01-01 |
TW201732952A (zh) | 2017-09-16 |
US20120319113A1 (en) | 2012-12-20 |
TWI595565B (zh) | 2017-08-11 |
JP6408644B2 (ja) | 2018-10-17 |
TWI686871B (zh) | 2020-03-01 |
KR20130005221A (ko) | 2013-01-15 |
JP6145251B2 (ja) | 2017-06-07 |
JP2019012843A (ja) | 2019-01-24 |
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