JP2012519389A - シリコンウエハを織地化する方法、その方法のための処理液及びその使用 - Google Patents
シリコンウエハを織地化する方法、その方法のための処理液及びその使用 Download PDFInfo
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- JP2012519389A JP2012519389A JP2011552429A JP2011552429A JP2012519389A JP 2012519389 A JP2012519389 A JP 2012519389A JP 2011552429 A JP2011552429 A JP 2011552429A JP 2011552429 A JP2011552429 A JP 2011552429A JP 2012519389 A JP2012519389 A JP 2012519389A
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- treatment liquid
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- 239000007788 liquid Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 16
- 239000010703 silicon Substances 0.000 title claims abstract description 16
- 238000009941 weaving Methods 0.000 title 1
- 239000000654 additive Substances 0.000 claims abstract description 15
- 230000000996 additive effect Effects 0.000 claims abstract description 13
- NMRPBPVERJPACX-UHFFFAOYSA-N (3S)-octan-3-ol Natural products CCCCCC(O)CC NMRPBPVERJPACX-UHFFFAOYSA-N 0.000 claims abstract description 6
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 claims abstract description 6
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 235000012431 wafers Nutrition 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000007796 conventional method Methods 0.000 claims 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000009835 boiling Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
Claims (8)
- 太陽電池の生産のためのシリコンウエハを処理する方法であって、織地化(texturization)の目的のために、処理液が該シリコンウエハの表面に適用されて、該処理液が添加剤を含み、該添加剤として、該処理液がエチルヘキサノール又はシクロヘキサノールを含む、方法。
- 前記方法が、太陽電池の生産において、シリコンウエハを織地化(texturization)する従来の方法よりも高温で実行されて、該高温が80℃から95℃の範囲であり、特にはおよそ90℃である、請求項1に記載の方法。
- 前記処理液が8分間から20分間の範囲で、特には10分間から13分間の範囲で、前記シリコンウエハに適用される、請求項1又は2に記載の方法。
- 前記シリコンウエハが該処理液中で扇動される、すなわち、該処理液に対して相対的に動かされる、請求項1から3のいずれか1項に記載の方法。
- 水に加えて、添加剤としてエチルヘキサノール又はシクロヘキサノールを含む、請求項1から4のいずれか1項に記載の方法を実行するための処理液。
- 前記添加剤が、0.3質量%から4質量%の範囲の量で添加される、好ましくは0.5質量%〜3質量%の範囲の量で添加される、請求項5に記載の処理液。
- 追加的にKOHを含み、好ましくは1.5容積%〜5容積%の量で含み、より好ましくは2容積%〜3容積%の量で含む、請求項5又は6に記載の処理液。
- 請求項1から4のいずれか1項に記載の方法を実行するための請求項5から7のいずれか1項に記載の処理液の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009012827A DE102009012827A1 (de) | 2009-03-03 | 2009-03-03 | Verfahren zur Texturierung von Siliziumwafern für Solarzellen und Behandlungsflüssigkeit dafür |
DE102009012827.1 | 2009-03-03 | ||
PCT/EP2010/052677 WO2010100185A1 (de) | 2009-03-03 | 2010-03-03 | Verfahren zur texturierung von siliziumwafern, behandlungsflüssigkeit dafür und verwendung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012519389A true JP2012519389A (ja) | 2012-08-23 |
JP5667092B2 JP5667092B2 (ja) | 2015-02-12 |
Family
ID=42309596
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011552429A Active JP5667092B2 (ja) | 2009-03-03 | 2010-03-03 | シリコンウエハを織地化する方法、その方法のための処理液及びその使用 |
Country Status (14)
Country | Link |
---|---|
US (1) | US8383523B2 (ja) |
EP (1) | EP2404325B1 (ja) |
JP (1) | JP5667092B2 (ja) |
KR (1) | KR101643307B1 (ja) |
CN (1) | CN102405529A (ja) |
AU (1) | AU2010220289B2 (ja) |
CA (1) | CA2754380A1 (ja) |
DE (1) | DE102009012827A1 (ja) |
ES (1) | ES2528632T3 (ja) |
IL (1) | IL214936A0 (ja) |
MX (1) | MX2011009243A (ja) |
MY (1) | MY157459A (ja) |
SG (1) | SG174226A1 (ja) |
WO (1) | WO2010100185A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009012827A1 (de) * | 2009-03-03 | 2010-10-07 | Gebr. Schmid Gmbh & Co. | Verfahren zur Texturierung von Siliziumwafern für Solarzellen und Behandlungsflüssigkeit dafür |
CN102544206B (zh) * | 2011-12-26 | 2014-02-26 | 霞浦吉阳新能源有限公司 | 一种用于晶体硅制绒的混醇工艺方法 |
CN102634851B (zh) * | 2012-03-26 | 2016-03-02 | 北京吉阳技术股份有限公司 | 一种用于太阳电池制造的制绒方法 |
CN106119977B (zh) * | 2016-08-29 | 2018-10-16 | 常州时创能源科技有限公司 | 单晶硅片制绒添加剂及应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005537680A (ja) * | 2002-09-04 | 2005-12-08 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング | シリコン表面および層のためのエッチングペースト |
WO2008052636A1 (de) * | 2006-11-01 | 2008-05-08 | Merck Patent Gmbh | Partikelhaltige ätzpasten für siliziumoberflächen und -schichten |
JP2010074102A (ja) * | 2008-09-22 | 2010-04-02 | Mitsubishi Electric Corp | シリコン基板のエッチング方法、シリコン基板のエッチング液、シリコン基板のエッチング装置 |
JP2010093194A (ja) * | 2008-10-10 | 2010-04-22 | Sharp Corp | 太陽電池の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19811878C2 (de) | 1998-03-18 | 2002-09-19 | Siemens Solar Gmbh | Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen |
WO2001099124A1 (fr) * | 2000-06-21 | 2001-12-27 | Dai Nippon Printing Co., Ltd. | Stratifie et son utilisation |
JP3740138B2 (ja) * | 2003-06-25 | 2006-02-01 | 直江津電子工業株式会社 | テクスチャー形成用エッチング液 |
JP4326545B2 (ja) * | 2006-02-23 | 2009-09-09 | 三洋電機株式会社 | 凹凸基板の製造方法及び光起電力素子の製造方法 |
DE102007026081A1 (de) | 2007-05-25 | 2008-11-27 | Gebr. Schmid Gmbh & Co. | Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer |
US8222149B2 (en) * | 2008-09-22 | 2012-07-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for photoresist pattern removal |
DE102009012827A1 (de) * | 2009-03-03 | 2010-10-07 | Gebr. Schmid Gmbh & Co. | Verfahren zur Texturierung von Siliziumwafern für Solarzellen und Behandlungsflüssigkeit dafür |
US7910393B2 (en) * | 2009-06-17 | 2011-03-22 | Innovalight, Inc. | Methods for forming a dual-doped emitter on a silicon substrate with a sub-critical shear thinning nanoparticle fluid |
SG170691A1 (en) * | 2009-10-14 | 2011-05-30 | Rohm & Haas Elect Mat | Method of cleaning and micro-etching semiconductor wafers |
EP2337089A3 (en) * | 2009-12-17 | 2013-12-11 | Rohm and Haas Electronic Materials LLC | Improved method of texturing semiconductor substrates |
-
2009
- 2009-03-03 DE DE102009012827A patent/DE102009012827A1/de not_active Withdrawn
-
2010
- 2010-03-03 MX MX2011009243A patent/MX2011009243A/es unknown
- 2010-03-03 CN CN2010800104778A patent/CN102405529A/zh active Pending
- 2010-03-03 CA CA2754380A patent/CA2754380A1/en not_active Abandoned
- 2010-03-03 EP EP10706634.2A patent/EP2404325B1/de active Active
- 2010-03-03 KR KR1020117020180A patent/KR101643307B1/ko active IP Right Grant
- 2010-03-03 AU AU2010220289A patent/AU2010220289B2/en not_active Ceased
- 2010-03-03 JP JP2011552429A patent/JP5667092B2/ja active Active
- 2010-03-03 SG SG2011063427A patent/SG174226A1/en unknown
- 2010-03-03 WO PCT/EP2010/052677 patent/WO2010100185A1/de active Application Filing
- 2010-03-03 ES ES10706634.2T patent/ES2528632T3/es active Active
- 2010-03-03 MY MYPI2011004011A patent/MY157459A/en unknown
-
2011
- 2011-09-01 IL IL214936A patent/IL214936A0/en unknown
- 2011-09-02 US US13/224,821 patent/US8383523B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005537680A (ja) * | 2002-09-04 | 2005-12-08 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング | シリコン表面および層のためのエッチングペースト |
WO2008052636A1 (de) * | 2006-11-01 | 2008-05-08 | Merck Patent Gmbh | Partikelhaltige ätzpasten für siliziumoberflächen und -schichten |
JP2010074102A (ja) * | 2008-09-22 | 2010-04-02 | Mitsubishi Electric Corp | シリコン基板のエッチング方法、シリコン基板のエッチング液、シリコン基板のエッチング装置 |
JP2010093194A (ja) * | 2008-10-10 | 2010-04-22 | Sharp Corp | 太陽電池の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
MY157459A (en) | 2016-06-15 |
SG174226A1 (en) | 2011-10-28 |
WO2010100185A1 (de) | 2010-09-10 |
AU2010220289A1 (en) | 2011-09-22 |
US8383523B2 (en) | 2013-02-26 |
US20120034725A1 (en) | 2012-02-09 |
ES2528632T3 (es) | 2015-02-11 |
EP2404325A1 (de) | 2012-01-11 |
EP2404325B1 (de) | 2014-12-03 |
JP5667092B2 (ja) | 2015-02-12 |
KR101643307B1 (ko) | 2016-07-27 |
CA2754380A1 (en) | 2010-09-10 |
IL214936A0 (en) | 2011-11-30 |
CN102405529A (zh) | 2012-04-04 |
DE102009012827A1 (de) | 2010-10-07 |
MX2011009243A (es) | 2011-10-24 |
AU2010220289B2 (en) | 2015-06-18 |
KR20110123756A (ko) | 2011-11-15 |
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