CN102405529A - 结构化硅晶片的方法、用于它的处理液及其应用 - Google Patents
结构化硅晶片的方法、用于它的处理液及其应用 Download PDFInfo
- Publication number
- CN102405529A CN102405529A CN2010800104778A CN201080010477A CN102405529A CN 102405529 A CN102405529 A CN 102405529A CN 2010800104778 A CN2010800104778 A CN 2010800104778A CN 201080010477 A CN201080010477 A CN 201080010477A CN 102405529 A CN102405529 A CN 102405529A
- Authority
- CN
- China
- Prior art keywords
- treatment fluid
- silicon wafer
- additive
- silicon wafers
- treatment liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 19
- 239000010703 silicon Substances 0.000 title claims abstract description 19
- 239000007788 liquid Substances 0.000 title abstract description 4
- 235000012431 wafers Nutrition 0.000 title abstract 4
- 239000000654 additive Substances 0.000 claims abstract description 13
- 230000000996 additive effect Effects 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000012530 fluid Substances 0.000 claims description 27
- -1 ethyl n-hexyl Chemical group 0.000 claims description 5
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N n-hexyl alcohol Natural products CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000007796 conventional method Methods 0.000 claims 1
- NMRPBPVERJPACX-UHFFFAOYSA-N (3S)-octan-3-ol Natural products CCCCCC(O)CC NMRPBPVERJPACX-UHFFFAOYSA-N 0.000 abstract 1
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 abstract 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 238000009835 boiling Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- HPXRVTGHNJAIIH-PTQBSOBMSA-N cyclohexanol Chemical group O[13CH]1CCCCC1 HPXRVTGHNJAIIH-PTQBSOBMSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
对在太阳能电池生产中的硅晶片处理的方法中，为了将其结构化的目的，将处理液施加于硅晶片的表面。所述处理液包含含量为0.5％-3％重量百分比的乙基正己醇或环己醇作为添加剂。
Description
应用领域和现有技术
本发明涉及根据权利要求1前序部分的对太阳能电池生产中的硅晶片的处理方法以及适用于该目的的处理液。另外，本发明涉及本发明用于实施所述方法的处理液的应用。
例如，DE 102007026081 A1公开了在太阳能电池生产中硅晶片的结构化。为此，处理液被施加于硅晶片表面上，从而在硅晶片表面形成角锥形突起。这些促进光耦合进入硅晶片及随后进入太阳能电池并伴随改进它们的能量输出。所述的处理液可包含异丙醇作为添加的蚀刻抑制剂。
目的及其效果
本发明的目标是提供如上述的方法和适用于该目的的处理液，借此可消除现有技术遇到的问题并且，特别是，可实现更快和更好的处理，即结构化。
该目标是通过具有权利要求1所限定特征的方法，具有权利要求5所限定特征的处理液，以及具有权利要求8所限定特征的应用来实现的。本发明有利以及优选的实施方式是其他权利要求的主题，并且在下文中对其进行更详细的说明。权利要求的措辞明确提及说明书的内容。
所述的处理液，其有利的是碱性的处理液，包含添加剂。所述添加剂可以是添加的蚀刻抑制剂，并且根据本发明来说是乙基正己醇或环己醇。这两种添加剂可有利地相互择一使用，但是在有些情况下它们可被同时使用。在处理液中这些具体的添加剂的益处是基于这样的事实：在本发明的另一个实施方式中，由于它们更高的沸点使得在温度超过其他可能的情况下实施所述方法成为可能。
由于乙基正己醇的沸点是182℃以及环己醇的沸点是161℃这一事实，在实施结构化时，混合了它们的处理液明显可以在更高的温度下使用。由于以往的添加剂异丙醇的低沸点为82℃，这要求要么持续的进行补充异丙醇，以免得到不满意的结构化结构，要么必须将所述温度保持在80℃或者更低，这种情况下为了实施处理，即结构化处理，所涉及的程序花费长得多的时间，其也可被认为非常有害。使用本发明的添加剂，因此可能在80℃或者更高的温度下实施结构化，例如在大约90℃。这样处理时间可为10至15分钟，且优选地约11分钟。接着硅晶片可以从包含处理液的浴中移走并随后清洗和干燥并进行接下来的处理。
在本发明的另一个实施方式中，硅晶片可以在处理液中被搅动，这同样地改善或加速结构化。这种情况下也可以提供硅晶片和处理液之间发生相对运动，也就是说，为了使得处理液保持运动或者显示出内部液体流。
本发明的目标还是通过使用本发明的所述方法实现的，特别是对在太阳能电池生产中的硅晶片实施处理。
本发明的处理液除了乙基正己醇和环己醇形式的添加剂之外，还包含水作为另外的组份。添加剂的量可以为0.3％-4％，以重量计，特别优选地为0.5％-3％，以重量计。
在本发明的另一实施方式中，处理液可以进一步包含KOH。其含量可以为1.5％-5％，以体积计，优选含量为2％-3％，以体积计。
本发明的另一个独立方面是本发明的用以实施方法的处理液的应用，更特别是应用于实施上面所述的方法。
权利要求中公开了这些和其他特征，其中各个特征可以单独地实现，或者在本发明的任一实施方式中或在其它领域中以次级结合(subcombinations)的方式组合起来，并且可固有地形成有益的和可专利的实施方式，这些实施方式在此要求保护。
至于本发明的执行，同时参考DE 102007026081 A1，其相关的主题内容通过引用包含在本说明书中。在所述的引用中，图1和图2示出了可如何实施该方法，以及因此利用此处示出的所述处理参数和数量可同样好地实施所述方法。
Claims (8)
1.一种对用于太阳能电池生产的硅晶片处理的方法，其中：
为了将其结构化的目的，在硅晶片的表面施加处理液，所述处理液包含添加剂，其特征在于，所述处理液中包含乙基正己醇或环己醇作为添加剂。
2.如权利要求1所述的方法，其特征在于，所述的方法在比太阳能电池生产中用于硅晶片的结构化的传统方法更高的温度下实施，所述的更高的温度的范围为80℃-95℃，更特别为约90℃。
3.如权利要求1或2所述的方法，其特征在于，所述的处理液施加于硅晶片的时间为8-20分钟，更特别所述时间范围为10-13分钟。
4.如以上权利要求任一项所述的方法，其特征在于，所述硅晶片在所述处理液中被搅动，即在其中相对运动。
5.一种用于实施以上权利要求任一项所述方法的处理液，其特征在于，其除了水外，还包含有乙基正己醇和环己醇作为添加剂。
6.如权利要求5所述的处理液，其特征在于，所述添加剂的含量的重量百分比为0.3％-4％，优选重量百分比为0.5％-3％。
7.如权利要求5或6所述的处理液，其特征在于，其进一步包括KOH，所述的KOH的含量的体积百分比优选地为1.5％-5％，且其更特别地体积百分比为2％-3％。
8.用于实施如权利要求1-4任一项所述方法的如权利要求5-7任一项定义的处理液的应用。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009012827A DE102009012827A1 (de) | 2009-03-03 | 2009-03-03 | Verfahren zur Texturierung von Siliziumwafern für Solarzellen und Behandlungsflüssigkeit dafür |
| DE102009012827.1 | 2009-03-03 | ||
| PCT/EP2010/052677 WO2010100185A1 (de) | 2009-03-03 | 2010-03-03 | Verfahren zur texturierung von siliziumwafern, behandlungsflüssigkeit dafür und verwendung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102405529A true CN102405529A (zh) | 2012-04-04 |
Family
ID=42309596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800104778A Pending CN102405529A (zh) | 2009-03-03 | 2010-03-03 | 结构化硅晶片的方法、用于它的处理液及其应用 |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US8383523B2 (zh) |
| EP (1) | EP2404325B1 (zh) |
| JP (1) | JP5667092B2 (zh) |
| KR (1) | KR101643307B1 (zh) |
| CN (1) | CN102405529A (zh) |
| AU (1) | AU2010220289B2 (zh) |
| CA (1) | CA2754380A1 (zh) |
| DE (1) | DE102009012827A1 (zh) |
| ES (1) | ES2528632T3 (zh) |
| IL (1) | IL214936A0 (zh) |
| MX (1) | MX2011009243A (zh) |
| MY (1) | MY157459A (zh) |
| SG (1) | SG174226A1 (zh) |
| WO (1) | WO2010100185A1 (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009012827A1 (de) * | 2009-03-03 | 2010-10-07 | Gebr. Schmid Gmbh & Co. | Verfahren zur Texturierung von Siliziumwafern für Solarzellen und Behandlungsflüssigkeit dafür |
| CN102544206B (zh) * | 2011-12-26 | 2014-02-26 | 霞浦吉阳新能源有限公司 | 一种用于晶体硅制绒的混醇工艺方法 |
| CN102634851B (zh) * | 2012-03-26 | 2016-03-02 | 北京吉阳技术股份有限公司 | 一种用于太阳电池制造的制绒方法 |
| CN106119977B (zh) * | 2016-08-29 | 2018-10-16 | 常州时创能源科技有限公司 | 单晶硅片制绒添加剂及应用 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19811878C2 (de) | 1998-03-18 | 2002-09-19 | Siemens Solar Gmbh | Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen |
| WO2001099124A1 (fr) * | 2000-06-21 | 2001-12-27 | Dai Nippon Printing Co., Ltd. | Stratifie et son utilisation |
| DE10241300A1 (de) * | 2002-09-04 | 2004-03-18 | Merck Patent Gmbh | Ätzpasten für Siliziumoberflächen und -schichten |
| JP3740138B2 (ja) * | 2003-06-25 | 2006-02-01 | 直江津電子工業株式会社 | テクスチャー形成用エッチング液 |
| JP4326545B2 (ja) * | 2006-02-23 | 2009-09-09 | 三洋電機株式会社 | 凹凸基板の製造方法及び光起電力素子の製造方法 |
| DE102006051952A1 (de) * | 2006-11-01 | 2008-05-08 | Merck Patent Gmbh | Partikelhaltige Ätzpasten für Siliziumoberflächen und -schichten |
| DE102007026081A1 (de) | 2007-05-25 | 2008-11-27 | Gebr. Schmid Gmbh & Co. | Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer |
| TWI393184B (zh) * | 2008-09-22 | 2013-04-11 | Taiwan Semiconductor Mfg | 半導體裝置之製造方法 |
| JP2010074102A (ja) * | 2008-09-22 | 2010-04-02 | Mitsubishi Electric Corp | シリコン基板のエッチング方法、シリコン基板のエッチング液、シリコン基板のエッチング装置 |
| JP2010093194A (ja) * | 2008-10-10 | 2010-04-22 | Sharp Corp | 太陽電池の製造方法 |
| DE102009012827A1 (de) * | 2009-03-03 | 2010-10-07 | Gebr. Schmid Gmbh & Co. | Verfahren zur Texturierung von Siliziumwafern für Solarzellen und Behandlungsflüssigkeit dafür |
| US7910393B2 (en) * | 2009-06-17 | 2011-03-22 | Innovalight, Inc. | Methods for forming a dual-doped emitter on a silicon substrate with a sub-critical shear thinning nanoparticle fluid |
| SG170691A1 (en) * | 2009-10-14 | 2011-05-30 | Rohm & Haas Elect Mat | Method of cleaning and micro-etching semiconductor wafers |
| EP2337089A3 (en) * | 2009-12-17 | 2013-12-11 | Rohm and Haas Electronic Materials LLC | Improved method of texturing semiconductor substrates |
-
2009
- 2009-03-03 DE DE102009012827A patent/DE102009012827A1/de not_active Withdrawn
-
2010
- 2010-03-03 MY MYPI2011004011A patent/MY157459A/en unknown
- 2010-03-03 ES ES10706634.2T patent/ES2528632T3/es active Active
- 2010-03-03 CA CA2754380A patent/CA2754380A1/en not_active Abandoned
- 2010-03-03 AU AU2010220289A patent/AU2010220289B2/en not_active Ceased
- 2010-03-03 EP EP10706634.2A patent/EP2404325B1/de active Active
- 2010-03-03 CN CN2010800104778A patent/CN102405529A/zh active Pending
- 2010-03-03 JP JP2011552429A patent/JP5667092B2/ja active Active
- 2010-03-03 WO PCT/EP2010/052677 patent/WO2010100185A1/de active Application Filing
- 2010-03-03 SG SG2011063427A patent/SG174226A1/en unknown
- 2010-03-03 KR KR1020117020180A patent/KR101643307B1/ko active IP Right Grant
- 2010-03-03 MX MX2011009243A patent/MX2011009243A/es unknown
-
2011
- 2011-09-01 IL IL214936A patent/IL214936A0/en unknown
- 2011-09-02 US US13/224,821 patent/US8383523B2/en active Active
Non-Patent Citations (1)
| Title |
|---|
| KATRIN BIRMANN,ETC: "FAST ALKALINE ETCHING OF MONOCRYSTALLINE WAFERS IN KOH/CHX", 《23RD EUROPEAN PHOTOVOLTAIC SOLAR ENERGY CONFERENCE-CD-ROM EDITION》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012519389A (ja) | 2012-08-23 |
| IL214936A0 (en) | 2011-11-30 |
| SG174226A1 (en) | 2011-10-28 |
| AU2010220289B2 (en) | 2015-06-18 |
| MY157459A (en) | 2016-06-15 |
| US20120034725A1 (en) | 2012-02-09 |
| DE102009012827A1 (de) | 2010-10-07 |
| KR20110123756A (ko) | 2011-11-15 |
| EP2404325B1 (de) | 2014-12-03 |
| WO2010100185A1 (de) | 2010-09-10 |
| KR101643307B1 (ko) | 2016-07-27 |
| US8383523B2 (en) | 2013-02-26 |
| CA2754380A1 (en) | 2010-09-10 |
| AU2010220289A1 (en) | 2011-09-22 |
| EP2404325A1 (de) | 2012-01-11 |
| ES2528632T3 (es) | 2015-02-11 |
| JP5667092B2 (ja) | 2015-02-12 |
| MX2011009243A (es) | 2011-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103426744A (zh) | 用于硅片制绒的组合物和方法 | |
| KR101362913B1 (ko) | 실리콘 웨이퍼의 텍스쳐링을 위한 조성물 및 방법 | |
| CN106119977B (zh) | 单晶硅片制绒添加剂及应用 | |
| CN102405529A (zh) | 结构化硅晶片的方法、用于它的处理液及其应用 | |
| CN102154711A (zh) | 一种单晶硅清洗液及预清洗工艺 | |
| JP2013541212A5 (zh) | ||
| CN103993360B (zh) | 多晶硅片制绒辅助剂及其应用 | |
| CN102403251B (zh) | 一种晶体硅片预清洗液及其预清洗工艺 | |
| CN102952650A (zh) | 一种太阳能电池硅片清洗剂及其清洗工艺 | |
| CN110922970A (zh) | 一种perc电池背抛光添加剂及工艺 | |
| CN102108557B (zh) | 一种制备单晶硅绒面的方法 | |
| CN113512728A (zh) | 一种除6系铝合金表面二氧化硅研磨液的清洗剂 | |
| KR20150108143A (ko) | 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법 | |
| CN1867659A (zh) | 洗涤剂 | |
| CN103878145B (zh) | 一种对硅酸镓镧晶片进行清洗的方法 | |
| CN102364697A (zh) | 一种去除rie制绒后晶体硅表面的微损伤层的方法 | |
| CN110644049A (zh) | 金刚线多晶硅片制绒添加剂及金刚线多晶硅片制绒刻蚀液 | |
| TWI635160B (zh) | 紋理蝕刻溶液組成物及晶體矽晶圓紋理蝕刻方法 | |
| CN108641826A (zh) | 一种涡轮油泥清除剂及涡轮冲洗液 | |
| CN103773374B (zh) | 碱性腐蚀液及腐蚀多晶硅片的方法 | |
| CN105802747B (zh) | 一种太阳能光伏电池硅片制绒后清洗用的清洗剂 | |
| CN110003996A (zh) | 一种浸泡液及其制备方法和使用方法 | |
| JP6157895B2 (ja) | テクスチャー形成用組成物、シリコン基板の製造方法、及びテクスチャー形成用組成物調製キット | |
| CN105655418A (zh) | 一种薄膜电池制绒工艺 | |
| CN102181936A (zh) | 一种制作多晶硅绒面的方法及腐蚀液 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120404 |