JP2012252004A5 - - Google Patents

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Publication number
JP2012252004A5
JP2012252004A5 JP2012124150A JP2012124150A JP2012252004A5 JP 2012252004 A5 JP2012252004 A5 JP 2012252004A5 JP 2012124150 A JP2012124150 A JP 2012124150A JP 2012124150 A JP2012124150 A JP 2012124150A JP 2012252004 A5 JP2012252004 A5 JP 2012252004A5
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sample
depositing
layer
sample surface
particle beam
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JP2012124150A
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JP6366216B2 (ja
JP2012252004A (ja
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JP2012124150A 2011-06-03 2012-05-31 Ｔｅｍ画像化用の薄い試料を作製する方法 Active JP6366216B2 (ja)

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US201161493308P 2011-06-03 2011-06-03
US61/493,308 2011-06-03

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JP2012252004A JP2012252004A (ja) 2012-12-20
JP2012252004A5 true JP2012252004A5 (enExample) 2015-07-16
JP6366216B2 JP6366216B2 (ja) 2018-08-01

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US (2) US8859963B2 (enExample)
EP (1) EP2530700B1 (enExample)
JP (1) JP6366216B2 (enExample)
CN (1) CN102809496B (enExample)

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CN105510092B (zh) * 2014-09-22 2019-11-01 中芯国际集成电路制造(上海)有限公司 Tem样品的制备方法
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CN107860620B (zh) * 2016-09-22 2020-07-28 中芯国际集成电路制造(上海)有限公司 一种透射电子显微镜样品及其制备方法
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CN108036979B (zh) * 2017-11-15 2018-12-21 中国科学院地质与地球物理研究所 基于静电力的矿物样品靶及其制作方法
KR102537699B1 (ko) 2017-12-26 2023-05-26 삼성전자주식회사 반도체 장치의 검사 방법
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