CN102809496B - 制备用于tem成像的薄样本的方法 - Google Patents
制备用于tem成像的薄样本的方法 Download PDFInfo
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- CN102809496B CN102809496B CN201210178011.XA CN201210178011A CN102809496B CN 102809496 B CN102809496 B CN 102809496B CN 201210178011 A CN201210178011 A CN 201210178011A CN 102809496 B CN102809496 B CN 102809496B
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
- G01N2001/2873—Cutting or cleaving
- G01N2001/2886—Laser cutting, e.g. tissue catapult
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2802—Transmission microscopes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Pathology (AREA)
- Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sampling And Sample Adjustment (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161493308P | 2011-06-03 | 2011-06-03 | |
| US61/493308 | 2011-06-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102809496A CN102809496A (zh) | 2012-12-05 |
| CN102809496B true CN102809496B (zh) | 2016-09-07 |
Family
ID=46458147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210178011.XA Active CN102809496B (zh) | 2011-06-03 | 2012-06-01 | 制备用于tem成像的薄样本的方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8859963B2 (enExample) |
| EP (1) | EP2530700B1 (enExample) |
| JP (1) | JP6366216B2 (enExample) |
| CN (1) | CN102809496B (enExample) |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103403520B (zh) | 2011-01-28 | 2015-12-23 | Fei公司 | Tem样品制备 |
| US8912490B2 (en) | 2011-06-03 | 2014-12-16 | Fei Company | Method for preparing samples for imaging |
| EP2749863A3 (en) * | 2012-12-31 | 2016-05-04 | Fei Company | Method for preparing samples for imaging |
| WO2013082496A1 (en) | 2011-12-01 | 2013-06-06 | Fei Company | High throughput tem preparation processes and hardware for backside thinning of cross-sectional view lamella |
| JP6105204B2 (ja) * | 2012-02-10 | 2017-03-29 | 株式会社日立ハイテクサイエンス | Ｔｅｍ観察用試料作製方法 |
| DE102012202519A1 (de) * | 2012-02-17 | 2013-08-22 | Carl Zeiss Microscopy Gmbh | Verfahren und Vorrichtungen zur Präparation mikroskopischer Proben mit Hilfe von gepulstem Licht |
| JP6085150B2 (ja) * | 2012-03-16 | 2017-02-22 | 株式会社日立ハイテクサイエンス | 試料作製装置及び試料作製方法 |
| JP5986408B2 (ja) * | 2012-03-22 | 2016-09-06 | 株式会社日立ハイテクサイエンス | 試料作製方法 |
| US10465293B2 (en) | 2012-08-31 | 2019-11-05 | Fei Company | Dose-based end-pointing for low-kV FIB milling TEM sample preparation |
| TWI612551B (zh) | 2012-10-05 | 2018-01-21 | Fei公司 | 在帶電粒子束樣品的製備減少屏幕效應之方法及系統 |
| JP6199979B2 (ja) * | 2012-10-05 | 2017-09-20 | エフ・イ−・アイ・カンパニー | 傾斜ミリング保護のためのバルク付着 |
| KR102155834B1 (ko) * | 2012-10-05 | 2020-09-14 | 에프이아이 컴파니 | 높은 종횡비 구조 분석 |
| CN104885196B (zh) * | 2012-12-31 | 2018-02-06 | Fei 公司 | 带电粒子束系统以及使用带电粒子束诱发沉积来填充孔的方法 |
| WO2014110379A1 (en) * | 2013-01-11 | 2014-07-17 | Fei Company | Ion implantation to alter etch rate |
| CN103940643A (zh) * | 2013-01-18 | 2014-07-23 | 中芯国际集成电路制造(上海)有限公司 | Tsv样品的制备方法 |
| CN103196718B (zh) * | 2013-03-14 | 2015-06-17 | 上海华力微电子有限公司 | Tem样品的制备方法 |
| CN103196728B (zh) * | 2013-04-09 | 2015-12-02 | 上海华力微电子有限公司 | 使用fib技术制备sem或tem样品保护层的方法 |
| CN103257066B (zh) * | 2013-05-07 | 2015-05-20 | 上海华力微电子有限公司 | Tem样品的制备方法 |
| CN103308365A (zh) * | 2013-06-27 | 2013-09-18 | 上海华力微电子有限公司 | Tem样品的制备方法 |
| JP6453580B2 (ja) * | 2013-08-14 | 2019-01-16 | エフ・イ−・アイ・カンパニー | 試料調製中におけるｔｅｍ試料からのプローブの分離 |
| CN103743608B (zh) * | 2014-01-21 | 2016-01-20 | 东南大学 | 用于原位透射电子显微镜的深亚微米器件样品及制备方法 |
| US9552958B2 (en) | 2014-02-25 | 2017-01-24 | Weatherford Technology Holdings, Llc | Alignment marking for rock sample analysis |
| CN103868773A (zh) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | 透射电镜样品的制作方法 |
| CN103868777B (zh) * | 2014-03-31 | 2016-03-02 | 上海华力微电子有限公司 | 透射电镜样品的制备方法 |
| US20150369710A1 (en) * | 2014-06-24 | 2015-12-24 | Fei Company | Method and System of Creating a Symmetrical FIB Deposition |
| CN105334086A (zh) * | 2014-08-13 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | Tem样品的制备方法及tem样品 |
| KR102358551B1 (ko) * | 2014-08-29 | 2022-02-04 | 가부시키가이샤 히다치 하이테크 사이언스 | 자동 시료편 제작 장치 |
| CN105510092B (zh) * | 2014-09-22 | 2019-11-01 | 中芯国际集成电路制造(上海)有限公司 | Tem样品的制备方法 |
| CN105092330B (zh) * | 2015-08-12 | 2017-12-22 | 上海华力微电子有限公司 | 一种tem样品制备方法 |
| US9978586B2 (en) * | 2015-11-06 | 2018-05-22 | Fei Company | Method of material deposition |
| CN105699139B (zh) * | 2016-01-20 | 2019-04-23 | 西安电子科技大学 | 基于反应离子刻蚀的GaN薄膜透射电子显微镜截面样品制备方法 |
| US9837246B1 (en) | 2016-07-22 | 2017-12-05 | Fei Company | Reinforced sample for transmission electron microscope |
| KR101737946B1 (ko) | 2016-08-16 | 2017-05-19 | 서울대학교산학협력단 | 박막 물성측정 및 분석용 시료 제작 방법 및 이에 의해 제작된 시료 |
| CN107860620B (zh) * | 2016-09-22 | 2020-07-28 | 中芯国际集成电路制造(上海)有限公司 | 一种透射电子显微镜样品及其制备方法 |
| CN106814095B (zh) * | 2017-02-12 | 2019-05-24 | 马新军 | 用于扫描电镜的冷冻制样装置 |
| US10324049B2 (en) | 2017-02-15 | 2019-06-18 | Saudi Arabian Oil Company | Rock sample preparation method by using focused ion beam for minimizing curtain effect |
| JP6974820B2 (ja) * | 2017-03-27 | 2021-12-01 | 株式会社日立ハイテクサイエンス | 荷電粒子ビーム装置、試料加工方法 |
| US10546719B2 (en) * | 2017-06-02 | 2020-01-28 | Fei Company | Face-on, gas-assisted etching for plan-view lamellae preparation |
| DE102017212020B3 (de) | 2017-07-13 | 2018-05-30 | Carl Zeiss Microscopy Gmbh | Verfahren zur In-situ-Präparation und zum Transfer mikroskopischer Proben, Computerprogrammprodukt sowie mikroskopische Probe |
| CN108036979B (zh) * | 2017-11-15 | 2018-12-21 | 中国科学院地质与地球物理研究所 | 基于静电力的矿物样品靶及其制作方法 |
| KR102537699B1 (ko) | 2017-12-26 | 2023-05-26 | 삼성전자주식회사 | 반도체 장치의 검사 방법 |
| CN110530700B (zh) * | 2019-10-14 | 2022-04-12 | 长江存储科技有限责任公司 | 采用fib制备测试样品的方法以及测试样品 |
| CN111366428B (zh) * | 2020-03-03 | 2023-06-09 | 上海华力集成电路制造有限公司 | Fib倒切制备tem样品的方法 |
| US11069509B1 (en) * | 2020-03-16 | 2021-07-20 | Fei Company | Method and system for backside planar view lamella preparation |
| CN113834831B (zh) * | 2020-06-08 | 2023-07-21 | 全德科技(厦门)有限公司 | 制备透射电子显微镜样品的方法 |
| WO2022016502A1 (en) * | 2020-07-24 | 2022-01-27 | Yangtze Memory Technologies Co., Ltd. | Method of preparing and analyzing thin films |
| CN113588372B (zh) * | 2021-08-13 | 2022-09-02 | 胜科纳米(苏州)股份有限公司 | 测量vcsel器件多层膜元素扩散的样品制备方法以及检测方法 |
| CN114964969B (zh) * | 2022-05-26 | 2024-10-08 | 中国工程物理研究院核物理与化学研究所 | 一种百微米级透射电镜样品的制备方法 |
| CN115078431B (zh) * | 2022-06-16 | 2025-01-21 | 中国核动力研究设计院 | 一种基于自离子辐照后锆合金透射电镜试样制备方法 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1158033A (ja) | 1997-08-26 | 1999-03-02 | Nippon Telegr & Teleph Corp <Ntt> | イオンミリング方法 |
| US6042736A (en) | 1997-11-17 | 2000-03-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preparing samples for microscopic examination |
| US6039000A (en) | 1998-02-11 | 2000-03-21 | Micrion Corporation | Focused particle beam systems and methods using a tilt column |
| JP2000035391A (ja) * | 1998-07-16 | 2000-02-02 | Seiko Instruments Inc | 薄片化加工時の試料歪除去方法 |
| JP2004537758A (ja) * | 2001-07-27 | 2004-12-16 | エフ・イ−・アイ・カンパニー | 電子ビーム処理 |
| JP3735614B2 (ja) | 2003-03-19 | 2006-01-18 | 株式会社東芝 | 透過電子顕微鏡観測用下地試料、透過電子顕微鏡測定方法、および透過電子顕微鏡装置 |
| US7611610B2 (en) * | 2003-11-18 | 2009-11-03 | Fei Company | Method and apparatus for controlling topographical variation on a milled cross-section of a structure |
| US7442924B2 (en) * | 2005-02-23 | 2008-10-28 | Fei, Company | Repetitive circumferential milling for sample preparation |
| JP2007092507A (ja) | 2005-09-05 | 2007-04-12 | Hitachi Zosen Corp | ジェットフローゲート |
| JP4947965B2 (ja) * | 2005-12-06 | 2012-06-06 | ラピスセミコンダクタ株式会社 | 透過型電子顕微鏡用の試料の作製方法、観察方法及び構造 |
| JP5600371B2 (ja) | 2006-02-15 | 2014-10-01 | エフ・イ−・アイ・カンパニー | 荷電粒子ビーム処理のための保護層のスパッタリング・コーティング |
| JP2007292507A (ja) | 2006-04-21 | 2007-11-08 | Matsushita Electric Ind Co Ltd | 透過型電子顕微鏡の試料作製方法および集束イオンビーム装置 |
| US7423263B2 (en) * | 2006-06-23 | 2008-09-09 | Fei Company | Planar view sample preparation |
| JP5959139B2 (ja) | 2006-10-20 | 2016-08-02 | エフ・イ−・アイ・カンパニー | Ｓ／ｔｅｍのサンプルを分析する方法 |
| US8835880B2 (en) * | 2006-10-31 | 2014-09-16 | Fei Company | Charged particle-beam processing using a cluster source |
| EP2109873B1 (en) * | 2007-02-06 | 2017-04-05 | FEI Company | High pressure charged particle beam system |
| US8835845B2 (en) | 2007-06-01 | 2014-09-16 | Fei Company | In-situ STEM sample preparation |
| EP2009421A1 (en) | 2007-06-29 | 2008-12-31 | FEI Company | Method for separating a lamella for TEM inspection from a core sample |
| JP5017059B2 (ja) * | 2007-10-29 | 2012-09-05 | エスアイアイ・ナノテクノロジー株式会社 | 試料作成装置および試料姿勢転換方法 |
| JP2009198412A (ja) | 2008-02-25 | 2009-09-03 | Sii Nanotechnology Inc | 透過電子顕微鏡用試料の作製方法及び透過電子顕微鏡用試料 |
| US8278220B2 (en) * | 2008-08-08 | 2012-10-02 | Fei Company | Method to direct pattern metals on a substrate |
| CN101776543A (zh) * | 2009-01-13 | 2010-07-14 | 中芯国际集成电路制造(上海)有限公司 | 透射电子显微镜检测样片的制备方法 |
| US8778804B2 (en) * | 2009-01-30 | 2014-07-15 | Fei Company | High selectivity, low damage electron-beam delineation etch |
| EP2226830B1 (en) * | 2009-03-06 | 2014-01-08 | FEI Company | Charged particle beam processing |
| EP2233907A1 (en) * | 2009-03-27 | 2010-09-29 | FEI Company | Forming an image while milling a work piece |
| WO2011060444A2 (en) * | 2009-11-16 | 2011-05-19 | Fei Company | Gas delivery for beam processing systems |
| EP2402475A1 (en) * | 2010-06-30 | 2012-01-04 | Fei Company | Beam-induced deposition at cryogenic temperatures |
| CN103403520B (zh) | 2011-01-28 | 2015-12-23 | Fei公司 | Tem样品制备 |
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| US20150102009A1 (en) | 2015-04-16 |
| US20130143412A1 (en) | 2013-06-06 |
| US9279752B2 (en) | 2016-03-08 |
| JP6366216B2 (ja) | 2018-08-01 |
| JP2012252004A (ja) | 2012-12-20 |
| US8859963B2 (en) | 2014-10-14 |
| EP2530700A2 (en) | 2012-12-05 |
| EP2530700B1 (en) | 2017-03-01 |
| CN102809496A (zh) | 2012-12-05 |
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