JP2015533215A5 - - Google Patents
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- JP2015533215A5 JP2015533215A5 JP2015535822A JP2015535822A JP2015533215A5 JP 2015533215 A5 JP2015533215 A5 JP 2015533215A5 JP 2015535822 A JP2015535822 A JP 2015535822A JP 2015535822 A JP2015535822 A JP 2015535822A JP 2015533215 A5 JP2015533215 A5 JP 2015533215A5
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- JP
- Japan
- Prior art keywords
- region
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- protective layer
- cross
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 claims 26
- 239000011241 protective layer Substances 0.000 claims 20
- 238000000151 deposition Methods 0.000 claims 14
- 238000003801 milling Methods 0.000 claims 10
- 238000010884 ion-beam technique Methods 0.000 claims 7
- 239000002245 particle Substances 0.000 claims 7
- 238000000313 electron-beam-induced deposition Methods 0.000 claims 5
- 238000003384 imaging method Methods 0.000 claims 5
- 230000008021 deposition Effects 0.000 claims 4
- 238000003860 storage Methods 0.000 claims 3
- 238000010894 electron beam technology Methods 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 238000001069 Raman spectroscopy Methods 0.000 claims 1
- 238000002441 X-ray diffraction Methods 0.000 claims 1
- 238000004458 analytical method Methods 0.000 claims 1
- 238000001888 ion beam-induced deposition Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000004626 scanning electron microscopy Methods 0.000 claims 1
- 239000011163 secondary particle Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261710580P | 2012-10-05 | 2012-10-05 | |
| US61/710,580 | 2012-10-05 | ||
| PCT/US2013/063479 WO2014055876A1 (en) | 2012-10-05 | 2013-10-04 | High aspect ratio structure analysis |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015533215A JP2015533215A (ja) | 2015-11-19 |
| JP2015533215A5 true JP2015533215A5 (enExample) | 2016-11-24 |
| JP6199978B2 JP6199978B2 (ja) | 2017-09-20 |
Family
ID=50435471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015535822A Active JP6199978B2 (ja) | 2012-10-05 | 2013-10-04 | 高アスペクト比構造体の分析 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9741536B2 (enExample) |
| EP (1) | EP2904382B1 (enExample) |
| JP (1) | JP6199978B2 (enExample) |
| KR (1) | KR102155834B1 (enExample) |
| CN (1) | CN104685348B (enExample) |
| TW (1) | TWI628702B (enExample) |
| WO (1) | WO2014055876A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104813459B (zh) | 2012-10-05 | 2018-01-19 | Fei 公司 | 多维结构访问 |
| TWI607498B (zh) * | 2012-10-05 | 2017-12-01 | Fei公司 | 使用帶電粒子束曝露樣品中所關注特徵的方法及系統 |
| US9741536B2 (en) | 2012-10-05 | 2017-08-22 | Fei Company | High aspect ratio structure analysis |
| TWI612551B (zh) | 2012-10-05 | 2018-01-21 | Fei公司 | 在帶電粒子束樣品的製備減少屏幕效應之方法及系統 |
| TWI616923B (zh) | 2012-12-31 | 2018-03-01 | Fei公司 | 使用帶電粒子束引發沈積填充一孔之方法、填充一高縱橫比孔之方法、帶電粒子束系統 |
| CZ304824B6 (cs) * | 2013-07-11 | 2014-11-19 | Tescan Orsay Holding, A.S. | Způsob opracovávání vzorku v zařízení se dvěma nebo více částicovými svazky a zařízení k jeho provádění |
| US9564291B1 (en) * | 2014-01-27 | 2017-02-07 | Mochii, Inc. | Hybrid charged-particle beam and light beam microscopy |
| KR102537699B1 (ko) | 2017-12-26 | 2023-05-26 | 삼성전자주식회사 | 반도체 장치의 검사 방법 |
| US11177110B2 (en) * | 2018-02-06 | 2021-11-16 | Howard Hughes Medical Institute | Volume scanning electron microscopy of serial thick tissue sections with gas cluster milling |
| US10811219B2 (en) * | 2018-08-07 | 2020-10-20 | Applied Materials Israel Ltd. | Method for evaluating a region of an object |
| WO2021083581A1 (en) * | 2019-10-31 | 2021-05-06 | Carl Zeiss Smt Gmbh | Fib-sem 3d tomography for measuring shape deviations of high aspect ratio structures |
| US10903044B1 (en) * | 2020-02-12 | 2021-01-26 | Applied Materials Israel Ltd. | Filling empty structures with deposition under high-energy SEM for uniform DE layering |
| KR102871146B1 (ko) | 2020-04-28 | 2025-10-15 | 삼성전자주식회사 | 하전입자를 이용한 반도체 소자 검사장치 및 이를 이용한 반도체 소자의 검사방법 |
| TWI826123B (zh) * | 2021-12-21 | 2023-12-11 | 德商卡爾蔡司Ｓｍｔ有限公司 | 以更高的精度對半導體晶圓進行３ｄ體積檢測的方法和檢測系統 |
| US12437965B1 (en) * | 2022-08-01 | 2025-10-07 | Mochil, Inc. | Charged-particle beam microscope with differential vacuum pressures |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4460634A (en) * | 1979-12-29 | 1984-07-17 | Masaaki Hasegawa | Adhesive sheet and method for manufacturing the same |
| US4460434A (en) * | 1982-04-15 | 1984-07-17 | At&T Bell Laboratories | Method for planarizing patterned surfaces |
| US5435850A (en) | 1993-09-17 | 1995-07-25 | Fei Company | Gas injection system |
| US5851413A (en) | 1996-06-19 | 1998-12-22 | Micrion Corporation | Gas delivery systems for particle beam processing |
| US6127277A (en) * | 1996-07-03 | 2000-10-03 | Tegal Corporation | Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls |
| US20010003035A1 (en) * | 1998-09-10 | 2001-06-07 | Robert G. Ozarski | Diffraction grating and fabrication technique for same |
| JP3805547B2 (ja) * | 1999-01-21 | 2006-08-02 | 株式会社日立製作所 | 試料作製装置 |
| JP2001264225A (ja) * | 2000-03-15 | 2001-09-26 | Hitachi Ltd | 試料作製方法 |
| US6517734B1 (en) * | 2000-07-13 | 2003-02-11 | Network Photonics, Inc. | Grating fabrication process using combined crystalline-dependent and crystalline-independent etching |
| EP1209737B2 (en) * | 2000-11-06 | 2014-04-30 | Hitachi, Ltd. | Method for specimen fabrication |
| US7108819B2 (en) * | 2001-08-27 | 2006-09-19 | The Boeing Company | Process for fabricating high aspect ratio embossing tool and microstructures |
| US20070087572A1 (en) * | 2004-02-27 | 2007-04-19 | Erwan Le Roy | Method and apparatus for the improvement of material/voltage contrast |
| JP5033314B2 (ja) * | 2004-09-29 | 2012-09-26 | 株式会社日立ハイテクノロジーズ | イオンビーム加工装置及び加工方法 |
| JP4927345B2 (ja) | 2005-04-07 | 2012-05-09 | ルネサスエレクトロニクス株式会社 | 試料体の加工観察装置及び試料体の観察方法 |
| CN100449722C (zh) | 2005-12-08 | 2009-01-07 | 中芯国际集成电路制造(上海)有限公司 | 一种测定深沟槽失效深度的方法 |
| JP5101845B2 (ja) * | 2006-08-21 | 2012-12-19 | エスアイアイ・ナノテクノロジー株式会社 | 集束イオンビーム装置ならびにそれを用いた試料断面作製方法および薄片試料作製方法 |
| CN101153855A (zh) | 2006-09-30 | 2008-04-02 | 中芯国际集成电路制造(上海)有限公司 | 试样台 |
| US8303833B2 (en) * | 2007-06-21 | 2012-11-06 | Fei Company | High resolution plasma etch |
| JP5873227B2 (ja) * | 2007-12-06 | 2016-03-01 | エフ・イ−・アイ・カンパニー | デコレーションを用いたスライス・アンド・ビュー |
| WO2009086534A1 (en) | 2007-12-28 | 2009-07-09 | Veeco Instruments Inc. | Method of fabricating a probe device for a metrology instrument and probe device produced thereby |
| US8866080B2 (en) * | 2008-03-14 | 2014-10-21 | Research Triangle Institute | Faraday cup array integrated with a readout IC and method for manufacture thereof |
| JP5175008B2 (ja) * | 2009-02-20 | 2013-04-03 | 株式会社日立ハイテクサイエンス | ミクロ断面加工方法 |
| JP5378185B2 (ja) * | 2009-12-08 | 2013-12-25 | 株式会社日立ハイテクノロジーズ | 集束イオンビーム装置、及び集束イオンビーム加工方法 |
| DE102011002583B9 (de) * | 2011-01-12 | 2018-06-28 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlgerät und Verfahren zur Bearbeitung und/oder Analyse einer Probe |
| JP5973466B2 (ja) | 2011-01-28 | 2016-08-23 | エフ・イ−・アイ・カンパニー | Ｔｅｍ試料の調製 |
| JP5825797B2 (ja) * | 2011-02-08 | 2015-12-02 | 株式会社ブリヂストン | 高分子材料の評価方法 |
| US8822921B2 (en) | 2011-06-03 | 2014-09-02 | Fei Company | Method for preparing samples for imaging |
| EP2749863A3 (en) | 2012-12-31 | 2016-05-04 | Fei Company | Method for preparing samples for imaging |
| US8912490B2 (en) | 2011-06-03 | 2014-12-16 | Fei Company | Method for preparing samples for imaging |
| US8859963B2 (en) * | 2011-06-03 | 2014-10-14 | Fei Company | Methods for preparing thin samples for TEM imaging |
| US9941096B2 (en) | 2011-09-12 | 2018-04-10 | Fei Company | Glancing angle mill |
| CN103946684B (zh) | 2011-12-01 | 2017-06-23 | Fei 公司 | 用于横截面视图薄层的背侧打薄的高吞吐量tem制备工艺和硬件 |
| US9733164B2 (en) | 2012-06-11 | 2017-08-15 | Fei Company | Lamella creation method and device using fixed-angle beam and rotating sample stage |
| US9741536B2 (en) | 2012-10-05 | 2017-08-22 | Fei Company | High aspect ratio structure analysis |
| TWI607498B (zh) | 2012-10-05 | 2017-12-01 | Fei公司 | 使用帶電粒子束曝露樣品中所關注特徵的方法及系統 |
| TWI616923B (zh) | 2012-12-31 | 2018-03-01 | Fei公司 | 使用帶電粒子束引發沈積填充一孔之方法、填充一高縱橫比孔之方法、帶電粒子束系統 |
-
2013
- 2013-10-04 US US14/433,354 patent/US9741536B2/en active Active
- 2013-10-04 WO PCT/US2013/063479 patent/WO2014055876A1/en not_active Ceased
- 2013-10-04 EP EP13844339.5A patent/EP2904382B1/en not_active Not-in-force
- 2013-10-04 TW TW102136150A patent/TWI628702B/zh active
- 2013-10-04 KR KR1020157008578A patent/KR102155834B1/ko active Active
- 2013-10-04 CN CN201380052272.XA patent/CN104685348B/zh active Active
- 2013-10-04 JP JP2015535822A patent/JP6199978B2/ja active Active
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