JP2014022296A5 - - Google Patents

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Publication number
JP2014022296A5
JP2014022296A5 JP2012162256A JP2012162256A JP2014022296A5 JP 2014022296 A5 JP2014022296 A5 JP 2014022296A5 JP 2012162256 A JP2012162256 A JP 2012162256A JP 2012162256 A JP2012162256 A JP 2012162256A JP 2014022296 A5 JP2014022296 A5 JP 2014022296A5
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Japan
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charged particle
particle beam
sample
cross
section
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JP2012162256A
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English (en)
Japanese (ja)
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JP2014022296A (ja
JP6002489B2 (ja
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Publication of JP2014022296A5 publication Critical patent/JP2014022296A5/ja
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JP2012162256A 2012-07-23 2012-07-23 荷電粒子線装置及び試料作製方法 Active JP6002489B2 (ja)

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JP2012162256A JP6002489B2 (ja) 2012-07-23 2012-07-23 荷電粒子線装置及び試料作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012162256A JP6002489B2 (ja) 2012-07-23 2012-07-23 荷電粒子線装置及び試料作製方法

Publications (3)

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JP2014022296A JP2014022296A (ja) 2014-02-03
JP2014022296A5 true JP2014022296A5 (enExample) 2015-04-16
JP6002489B2 JP6002489B2 (ja) 2016-10-05

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JP (1) JP6002489B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6867015B2 (ja) * 2017-03-27 2021-04-28 株式会社日立ハイテクサイエンス 自動加工装置
KR102677678B1 (ko) * 2017-09-25 2024-06-21 셀라 - 솔루션스 인에이블링 나노 어낼리시스 엘티디. 깊이 제어 가능한 이온 밀링
CN107894357B (zh) * 2017-11-08 2021-03-05 上海华力微电子有限公司 一种自动化的样本减薄方法
JP7154531B2 (ja) * 2018-03-22 2022-10-18 国立大学法人東北大学 電子デバイスの評価方法および評価装置
CN109059812B (zh) * 2018-09-11 2020-11-24 太原理工大学 一种精确测量曲面上多层微纳米薄膜厚度的方法
JP7202642B2 (ja) * 2019-03-26 2023-01-12 株式会社日立ハイテクサイエンス 荷電粒子ビーム装置、及び制御方法
WO2021130992A1 (ja) * 2019-12-26 2021-07-01 株式会社日立ハイテク 解析システム、ラメラの検査方法および荷電粒子線装置
KR102748034B1 (ko) * 2020-02-27 2024-12-31 주식회사 히타치하이테크 반도체 해석 시스템
KR102709623B1 (ko) * 2020-02-27 2024-09-26 주식회사 히타치하이테크 반도체 해석 시스템
CN113390914B (zh) * 2020-03-13 2022-10-14 中国科学院上海硅酸盐研究所 一种基于聚焦离子束表征陶瓷涂层材料三维显微结构的方法
EP4024039B1 (en) * 2020-12-30 2023-10-25 FEI Company Data acquisition and processing techniques for three-dimensional reconstruction
CN113865915B (zh) * 2021-09-18 2023-10-13 长江存储科技有限责任公司 一种切片样品的检测方法
KR20250114349A (ko) 2023-01-25 2025-07-29 주식회사 히타치하이테크 검사 관리 시스템 및 방법
JPWO2024157381A1 (enExample) 2023-01-25 2024-08-02
CN121068650A (zh) * 2025-11-06 2025-12-05 北京聚睿众邦科技有限公司 基于FIB和TEM的FinFET结构切片分析方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4307470B2 (ja) * 2006-08-08 2009-08-05 株式会社日立ハイテクノロジーズ 荷電粒子線装置、試料加工方法及び半導体検査装置
JP4691529B2 (ja) * 2007-07-20 2011-06-01 株式会社日立ハイテクノロジーズ 荷電粒子線装置、及び試料加工観察方法
JP5105357B2 (ja) * 2007-11-01 2012-12-26 エスアイアイ・ナノテクノロジー株式会社 欠陥認識方法、欠陥観察方法、及び荷電粒子ビーム装置
JP4965481B2 (ja) * 2008-02-15 2012-07-04 エスアイアイ・ナノテクノロジー株式会社 複合荷電粒子ビーム装置、それを用いた試料加工方法及び透過電子顕微鏡用試料作製方法
JP5216739B2 (ja) * 2009-10-15 2013-06-19 株式会社日立ハイテクノロジーズ 荷電粒子線装置、及び膜厚測定方法
JP5292348B2 (ja) * 2010-03-26 2013-09-18 株式会社日立ハイテクノロジーズ 複合荷電粒子線装置

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