JP2014022296A5 - - Google Patents
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- JP2014022296A5 JP2014022296A5 JP2012162256A JP2012162256A JP2014022296A5 JP 2014022296 A5 JP2014022296 A5 JP 2014022296A5 JP 2012162256 A JP2012162256 A JP 2012162256A JP 2012162256 A JP2012162256 A JP 2012162256A JP 2014022296 A5 JP2014022296 A5 JP 2014022296A5
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- JP
- Japan
- Prior art keywords
- charged particle
- particle beam
- sample
- cross
- section
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- 239000002245 particle Substances 0.000 claims description 41
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 239000000523 sample Substances 0.000 claims 34
- 230000005540 biological transmission Effects 0.000 claims 6
- 239000010409 thin film Substances 0.000 claims 4
- 230000002950 deficient Effects 0.000 claims 2
- 239000010408 film Substances 0.000 claims 2
- 238000003754 machining Methods 0.000 claims 2
- 238000003801 milling Methods 0.000 claims 1
Description
上記課題に鑑み、本発明は、例えば、試料を設置する試料ステージと、イオンビームを発生させ試料面上に集束させて走査させるイオンビーム照射系と、電子ビームを発生させて試料面上に集束させて走査させる電子ビーム照射系と、前記試料から発生する二次荷電粒子を検出する検出器と、前記検出器で検出された二次荷電粒子から二次荷電粒子像を形成し、複数の断面二次荷電粒子像から三次元再構築データを取得する演算部と、を備えた荷電粒子線装置であって、前記三次元再構築データから所定の断面像を抽出し、当該抽出された断面像と前記試料の加工部分の加工断面像との比較情報に基づき、加工を停止する、との構成を有する。
In view of the above problems, the present invention provides , for example, a sample stage on which a sample is set, an ion beam irradiation system that generates and focuses an ion beam on the sample surface, and an electron beam that is focused on the sample surface. An electron beam irradiation system for scanning, a detector for detecting secondary charged particles generated from the sample, a secondary charged particle image formed from the secondary charged particles detected by the detector, and a plurality of cross sections A charged particle beam apparatus comprising: a calculation unit that acquires three-dimensional reconstruction data from a secondary charged particle image, wherein a predetermined cross-sectional image is extracted from the three-dimensional reconstruction data, and the extracted cross-sectional image based on the comparison information with the processed cross section image of the working portion of the sample, it stops the processing, with the configuration of the.
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012162256A JP6002489B2 (en) | 2012-07-23 | 2012-07-23 | Charged particle beam apparatus and sample preparation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012162256A JP6002489B2 (en) | 2012-07-23 | 2012-07-23 | Charged particle beam apparatus and sample preparation method |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014022296A JP2014022296A (en) | 2014-02-03 |
JP2014022296A5 true JP2014022296A5 (en) | 2015-04-16 |
JP6002489B2 JP6002489B2 (en) | 2016-10-05 |
Family
ID=50196931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012162256A Active JP6002489B2 (en) | 2012-07-23 | 2012-07-23 | Charged particle beam apparatus and sample preparation method |
Country Status (1)
Country | Link |
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JP (1) | JP6002489B2 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6867015B2 (en) | 2017-03-27 | 2021-04-28 | 株式会社日立ハイテクサイエンス | Automatic processing equipment |
KR20190035587A (en) * | 2017-09-25 | 2019-04-03 | 셀라 - 솔루션스 인에이블링 나노 어낼리시스 엘티디. | Depth-controllable ion milling |
CN107894357B (en) * | 2017-11-08 | 2021-03-05 | 上海华力微电子有限公司 | Automatic sample thinning method |
JP7154531B2 (en) * | 2018-03-22 | 2022-10-18 | 国立大学法人東北大学 | Electronic device evaluation method and evaluation apparatus |
CN109059812B (en) * | 2018-09-11 | 2020-11-24 | 太原理工大学 | Method for accurately measuring thickness of multilayer micro-nano film on curved surface |
JP7202642B2 (en) * | 2019-03-26 | 2023-01-12 | 株式会社日立ハイテクサイエンス | Charged particle beam device and control method |
WO2021130992A1 (en) * | 2019-12-26 | 2021-07-01 | 株式会社日立ハイテク | Analysis system, method for inspecting lamella, and charged particle beam device |
US20230055155A1 (en) * | 2020-02-27 | 2023-02-23 | Hitachi High-Tech Corporation | Semiconductor Analysis System |
KR20220123049A (en) * | 2020-02-27 | 2022-09-05 | 주식회사 히타치하이테크 | Semiconductor analysis system |
CN113390914B (en) * | 2020-03-13 | 2022-10-14 | 中国科学院上海硅酸盐研究所 | Method for representing three-dimensional microstructure of ceramic coating material based on focused ion beam |
CN113865915B (en) * | 2021-09-18 | 2023-10-13 | 长江存储科技有限责任公司 | Slice sample detection method |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4307470B2 (en) * | 2006-08-08 | 2009-08-05 | 株式会社日立ハイテクノロジーズ | Charged particle beam apparatus, sample processing method, and semiconductor inspection apparatus |
JP4691529B2 (en) * | 2007-07-20 | 2011-06-01 | 株式会社日立ハイテクノロジーズ | Charged particle beam apparatus and sample processing observation method |
JP5105357B2 (en) * | 2007-11-01 | 2012-12-26 | エスアイアイ・ナノテクノロジー株式会社 | Defect recognition method, defect observation method, and charged particle beam apparatus |
JP4965481B2 (en) * | 2008-02-15 | 2012-07-04 | エスアイアイ・ナノテクノロジー株式会社 | Composite charged particle beam apparatus, sample processing method using the same, and sample preparation method for transmission electron microscope |
JP5216739B2 (en) * | 2009-10-15 | 2013-06-19 | 株式会社日立ハイテクノロジーズ | Charged particle beam apparatus and film thickness measuring method |
JP5292348B2 (en) * | 2010-03-26 | 2013-09-18 | 株式会社日立ハイテクノロジーズ | Compound charged particle beam system |
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2012
- 2012-07-23 JP JP2012162256A patent/JP6002489B2/en active Active
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