JP2014022296A5 - - Google Patents

Download PDF

Info

Publication number
JP2014022296A5
JP2014022296A5 JP2012162256A JP2012162256A JP2014022296A5 JP 2014022296 A5 JP2014022296 A5 JP 2014022296A5 JP 2012162256 A JP2012162256 A JP 2012162256A JP 2012162256 A JP2012162256 A JP 2012162256A JP 2014022296 A5 JP2014022296 A5 JP 2014022296A5
Authority
JP
Japan
Prior art keywords
charged particle
particle beam
sample
cross
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012162256A
Other languages
Japanese (ja)
Other versions
JP2014022296A (en
JP6002489B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2012162256A priority Critical patent/JP6002489B2/en
Priority claimed from JP2012162256A external-priority patent/JP6002489B2/en
Publication of JP2014022296A publication Critical patent/JP2014022296A/en
Publication of JP2014022296A5 publication Critical patent/JP2014022296A5/ja
Application granted granted Critical
Publication of JP6002489B2 publication Critical patent/JP6002489B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Description

上記課題に鑑み、本発明は、例えば、試料を設置する試料ステージと、イオンビームを発生させ試料面上に集束させて走査させるイオンビーム照射系と、電子ビームを発生させて試料面上に集束させて走査させる電子ビーム照射系と、前記試料から発生する二次荷電粒子を検出する検出器と、前記検出器で検出された二次荷電粒子から二次荷電粒子像を形成し、複数の断面二次荷電粒子像から三次元再構築データを取得する演算部と、を備えた荷電粒子線装置であって、前記三次元再構築データから所定の断面像を抽出し、当該抽出された断面像と前記試料の加工部分の加工断面像との比較情報に基づき、加工を停止する、との構成を有する

In view of the above problems, the present invention provides , for example, a sample stage on which a sample is set, an ion beam irradiation system that generates and focuses an ion beam on the sample surface, and an electron beam that is focused on the sample surface. An electron beam irradiation system for scanning, a detector for detecting secondary charged particles generated from the sample, a secondary charged particle image formed from the secondary charged particles detected by the detector, and a plurality of cross sections A charged particle beam apparatus comprising: a calculation unit that acquires three-dimensional reconstruction data from a secondary charged particle image, wherein a predetermined cross-sectional image is extracted from the three-dimensional reconstruction data, and the extracted cross-sectional image based on the comparison information with the processed cross section image of the working portion of the sample, it stops the processing, with the configuration of the.

Claims (13)

試料を設置する試料ステージと、イオンビームを発生させ試料面上に集束させて走査させるイオンビーム照射系と、電子ビームを発生させて試料面上に集束させて走査させる電子ビーム照射系と、前記試料から発生する二次荷電粒子を検出する検出器と、前記検出器で検出された二次荷電粒子から二次荷電粒子像を形成し、複数の断面二次荷電粒子像から三次元再構築データを取得する演算部と、を備えた荷電粒子線装置であって、前記三次元再構築データから所定の断面像を抽出し、当該抽出された断面像と前記試料の加工部分の加工断面像との比較情報に基づき、加工を停止することを特徴とする荷電粒子線装置。 A sample stage for setting a sample; an ion beam irradiation system for generating and focusing an ion beam on the sample surface; an electron beam irradiation system for generating and focusing an electron beam on the sample surface; and A detector for detecting secondary charged particles generated from a sample, and forming a secondary charged particle image from secondary charged particles detected by the detector, and three-dimensional reconstruction data from a plurality of cross-sectional secondary charged particle images a charged particle beam apparatus provided with an arithmetic unit for obtaining the extracted predetermined cross-sectional images from a three-dimensional reconfiguration Chikude over data, processing of the working portion of the with the extracted cross-section image sample A charged particle beam apparatus characterized by stopping processing based on comparison information with a cross-sectional image. 請求項1記載の荷電粒子線装置において、連続断面二次荷電粒子線像を用いて三次元再構築した三次元再構築データから加工終点となる断面像を抽出し、前記試料の加工部分の加工断面像とを比較し、一致した際に加工終点と判断し、加工が停止することを特徴とする荷電粒子線装置。   The charged particle beam apparatus according to claim 1, wherein a cross-sectional image serving as a processing end point is extracted from three-dimensional reconstruction data that is three-dimensionally reconstructed using a secondary cross-sectional charged particle beam image, and processing of a processed portion of the sample A charged particle beam apparatus characterized in that when a cross-sectional image is compared and coincident, the processing end point is determined and processing stops. 請求項1記載の荷電粒子線装置において、連続断面二次荷電粒子線像を用いて三次元再構築した三次元再構築データから複数の断面像を抽出し、前記試料の加工部分の加工断面像と比較し、前記複数の断面像と前記加工断面像とが一致しない場合に加工終点と判断し、加工が停止することを特徴とする荷電粒子線装置。 The charged particle beam apparatus according to claim 1, wherein a plurality of cross-sectional images are extracted from three-dimensional reconstruction data reconstructed three-dimensionally using a secondary cross-sectional charged particle beam image, and a processed cross-sectional image of a processed portion of the sample and to compare, the plurality of the cross section image processing section image and it is determined milling end point and when they do not match, the charged particle beam device processing wherein the stop. 請求項3記載の荷電粒子線装置において、一致する断面が検出されなかった場合、その加工断面を不良部分と認識し、加工が自動停止することを特徴とする荷電粒子線装置The charged particle beam apparatus according to claim 3, wherein when a matching section is not detected, recognizes the processed cross section and defective part, machining charged particle beam apparatus characterized by automatically stopped. 請求項2〜4のいずれかに記載の荷電粒子線装置において、前記試料が、メカニカルプローブで摘出した微小試料片であり、当該微小試料片を加工して薄膜試料を作製することを特徴とする荷電粒子線装置 5. The charged particle beam apparatus according to claim 2 , wherein the sample is a minute sample piece extracted by a mechanical probe , and the minute sample piece is processed to produce a thin film sample. Charged particle beam device . 請求項1記載の荷電粒子線装置において、三次元再構築データから加工終点となる断面を抽出し、現在の加工断面と照合し、三次元再構築データから一致する断面を抽出し、断面に対する断面の試料回転角度及び試料傾斜角度を算出し、算出した試料回転角度と傾斜角度を現在の試料ステージに反映できることを特徴とする荷電粒子線装置。 The charged particle beam device according to claim 1, wherein a section A that is a processing end point is extracted from the three-dimensional reconstruction data, collated with a current processing section B, and a matching section C is extracted from the three-dimensional reconstruction data. A charged particle beam apparatus characterized by calculating a sample rotation angle and a sample inclination angle of a cross section C with respect to a cross section A and reflecting the calculated sample rotation angle and inclination angle on a current sample stage. 請求項1記載の荷電粒子線装置において、前記試料を透過した電子を検出する透過電子検出器と、前記の透過電子から形成される透過電子像を表示する手段と、微小試料片を傾斜しながら連続傾斜透過電子像を取得できる手段と、前記連続傾斜透過像を用いて三次元再構成できる三次元再構成システムとを具備し、連続傾斜透過像を用いて三次元再構成した三次元再構成データから加工終点となる断面像を抽出し、現在の加工断面像と照合し、一致した際に加工終点と判断し、加工が自動で停止することを特徴とする荷電粒子線装置。 2. The charged particle beam apparatus according to claim 1, wherein a transmission electron detector for detecting electrons transmitted through the sample, a means for displaying a transmission electron image formed from the transmission electrons, and a minute sample piece are tilted. A three-dimensional reconstruction comprising a means capable of acquiring a continuous tilt transmission electron image and a three-dimensional reconstruction system capable of three-dimensional reconstruction using the continuous tilt transmission image, and three-dimensional reconstruction using the continuous tilt transmission image A charged particle beam apparatus characterized in that a cross-sectional image serving as a processing end point is extracted from data, collated with a current processing cross-sectional image, and when it matches, the processing end point is determined, and the processing is automatically stopped . 請求項記載の荷電粒子線装置において、イオンビームによる加工断面の二次荷電粒子線像を取得し、取得した二次荷電粒子線像と三次元再構成データから抽出した全断面像を照合し、一致する断面が検出された場合、イオンビームによる加工と電子ビームによる観察を連続的に繰り返すことを特徴とする荷電粒子線装置8. The charged particle beam apparatus according to claim 7, wherein a secondary charged particle beam image of a processed cross section by an ion beam is acquired, and the acquired secondary charged particle beam image is collated with an entire cross sectional image extracted from three-dimensional reconstruction data. A charged particle beam apparatus characterized by continuously repeating processing with an ion beam and observation with an electron beam when a matching cross section is detected. 請求項記載の荷電粒子線装置において、一致する断面が検出されなかった場合、その加工断面を不良部分と認識し、加工が自動停止することを特徴とする荷電粒子線装置The charged particle beam apparatus according to claim 8, when a matching section is not detected, recognizes the processed cross section and defective part, machining charged particle beam apparatus characterized by automatically stopped. 請求項7〜9のいずれかに記載の荷電粒子線装置において、前記試料が、メカニカルプローブで摘出した微小試料片であり、当該微小試料片を加工して薄膜試料を作製することを特徴とする荷電粒子線装置 10. The charged particle beam apparatus according to claim 7 , wherein the sample is a micro sample piece extracted by a mechanical probe , and the micro sample piece is processed to produce a thin film sample. Charged particle beam device . 請求項記載の荷電粒子線装置において、三次元再構成データから加工終点となる断面を抽出し、現在の加工断面と照合し、三次元再構成データから一致する断面を抽出し、断面に対する断面の試料回転角度及び試料傾斜角度を算出し、算出した試料回転角度と傾斜角度を現在の試料ステージに反映できることを特徴とする荷電粒子線装置。 The charged particle beam apparatus according to claim 7, wherein a section A that is a processing end point is extracted from the three-dimensional reconstruction data, is compared with a current processing section B, and a matching section C is extracted from the three-dimensional reconstruction data. A charged particle beam apparatus characterized by calculating a sample rotation angle and a sample inclination angle of a cross section C with respect to a cross section A and reflecting the calculated sample rotation angle and inclination angle on a current sample stage. 請求項記載の荷電粒子線装置において、前記薄膜試料の両断面の二次荷電粒子像を三次元再構築データから抽出することにより、前記薄膜試料の試料厚さを算出することを特徴とする荷電粒子線装置Oite the charged particle beam apparatus according to claim 5, wherein, by extracting the secondary charged particle image of both cross-section of the film sample from the three-dimensional reconstruction data, characterized by calculating a sample thickness of the thin film sample A charged particle beam device . 請求項10記載の荷電粒子線装置おいて、前記薄膜試料の両断面の二次荷電粒子像を三次元再構成データから抽出することにより、前記薄膜試料の試料厚さを算出することを特徴とする荷電粒子線装置 The charged particle beam device Oite according to claim 10, by extracting the secondary charged particle image of both cross-section of the film sample from the three-dimensional reconstruction data, characterized by calculating a sample thickness of the thin film sample Charged particle beam device .
JP2012162256A 2012-07-23 2012-07-23 Charged particle beam apparatus and sample preparation method Active JP6002489B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012162256A JP6002489B2 (en) 2012-07-23 2012-07-23 Charged particle beam apparatus and sample preparation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012162256A JP6002489B2 (en) 2012-07-23 2012-07-23 Charged particle beam apparatus and sample preparation method

Publications (3)

Publication Number Publication Date
JP2014022296A JP2014022296A (en) 2014-02-03
JP2014022296A5 true JP2014022296A5 (en) 2015-04-16
JP6002489B2 JP6002489B2 (en) 2016-10-05

Family

ID=50196931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012162256A Active JP6002489B2 (en) 2012-07-23 2012-07-23 Charged particle beam apparatus and sample preparation method

Country Status (1)

Country Link
JP (1) JP6002489B2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6867015B2 (en) 2017-03-27 2021-04-28 株式会社日立ハイテクサイエンス Automatic processing equipment
KR20190035587A (en) * 2017-09-25 2019-04-03 셀라 - 솔루션스 인에이블링 나노 어낼리시스 엘티디. Depth-controllable ion milling
CN107894357B (en) * 2017-11-08 2021-03-05 上海华力微电子有限公司 Automatic sample thinning method
JP7154531B2 (en) * 2018-03-22 2022-10-18 国立大学法人東北大学 Electronic device evaluation method and evaluation apparatus
CN109059812B (en) * 2018-09-11 2020-11-24 太原理工大学 Method for accurately measuring thickness of multilayer micro-nano film on curved surface
JP7202642B2 (en) * 2019-03-26 2023-01-12 株式会社日立ハイテクサイエンス Charged particle beam device and control method
WO2021130992A1 (en) * 2019-12-26 2021-07-01 株式会社日立ハイテク Analysis system, method for inspecting lamella, and charged particle beam device
US20230055155A1 (en) * 2020-02-27 2023-02-23 Hitachi High-Tech Corporation Semiconductor Analysis System
KR20220123049A (en) * 2020-02-27 2022-09-05 주식회사 히타치하이테크 Semiconductor analysis system
CN113390914B (en) * 2020-03-13 2022-10-14 中国科学院上海硅酸盐研究所 Method for representing three-dimensional microstructure of ceramic coating material based on focused ion beam
CN113865915B (en) * 2021-09-18 2023-10-13 长江存储科技有限责任公司 Slice sample detection method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4307470B2 (en) * 2006-08-08 2009-08-05 株式会社日立ハイテクノロジーズ Charged particle beam apparatus, sample processing method, and semiconductor inspection apparatus
JP4691529B2 (en) * 2007-07-20 2011-06-01 株式会社日立ハイテクノロジーズ Charged particle beam apparatus and sample processing observation method
JP5105357B2 (en) * 2007-11-01 2012-12-26 エスアイアイ・ナノテクノロジー株式会社 Defect recognition method, defect observation method, and charged particle beam apparatus
JP4965481B2 (en) * 2008-02-15 2012-07-04 エスアイアイ・ナノテクノロジー株式会社 Composite charged particle beam apparatus, sample processing method using the same, and sample preparation method for transmission electron microscope
JP5216739B2 (en) * 2009-10-15 2013-06-19 株式会社日立ハイテクノロジーズ Charged particle beam apparatus and film thickness measuring method
JP5292348B2 (en) * 2010-03-26 2013-09-18 株式会社日立ハイテクノロジーズ Compound charged particle beam system

Similar Documents

Publication Publication Date Title
JP2014022296A5 (en)
JP6333462B2 (en) Image storage method and scanning microscope
EP2629083A3 (en) 3d backscatter imaging system
JP2016517959A5 (en)
JP6425906B2 (en) Medical image diagnostic apparatus and medical image processing apparatus
JP2016207651A5 (en) Charged particle microscope and method for tomographic imaging
JP2013020212A5 (en)
EP2365356A3 (en) Three-dimensional (3D) ultrasound system for scanning object inside human body and method for operating 3D ultrasound system
EP2466295A3 (en) Method and apparatus for laminography inspection
EP3223298A3 (en) Method for 3d-imaging from cross-section processing and observation, and fib-sem apparatus therefor
EP3177040A3 (en) Information processing apparatus, information processing method, and program
JP2014168227A5 (en)
JP2016503890A5 (en)
ATE476142T1 (en) METHOD AND SYSTEM FOR BINOCULAR STEREOSCOPIC IMAGING BY SCANNING RADIOGRAPHY
WO2015181808A4 (en) Method and apparatus for slice and view sample imaging
JP2015533215A5 (en)
JP2013176468A5 (en)
EP2526869A3 (en) Image processing device, radiographic image capture system, image processing method and image processing program storage medium
JP5990016B2 (en) Cross-section processing observation device
EP2662880A3 (en) Electron beam device
JP2014009976A (en) Three-dimensional shape measurement x-ray ct device and three-dimensional shape measurement method by x-ray ct device
TW201350788A (en) X-ray inspection method and x-ray inspection device
EP3267183B1 (en) Measurement processing device, x-ray inspection device, measurement processing method, measurement processing program, and structure manufacturing method
KR101425530B1 (en) Apparatus for Correction of Object Classification Algorism Using X-ray Computed Tomography
US10888291B2 (en) Breast imaging device, image processing device, and image processing method