WO2021171492A1 - 半導体解析システム - Google Patents
半導体解析システム Download PDFInfo
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- WO2021171492A1 WO2021171492A1 PCT/JP2020/008058 JP2020008058W WO2021171492A1 WO 2021171492 A1 WO2021171492 A1 WO 2021171492A1 JP 2020008058 W JP2020008058 W JP 2020008058W WO 2021171492 A1 WO2021171492 A1 WO 2021171492A1
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- thin film
- film sample
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- transmission electron
- electron microscope
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Definitions
- the present invention relates to a semiconductor analysis system.
- Patent Document 1 states that in the preparation of a sample for a transmission electron microscope, productivity is improved by not using deposition when fixing a flaky sample prepared by processing with a charged particle beam to a sample holder. Techniques for improvement are disclosed.
- FIG. 1 is a schematic configuration diagram showing an example of a semiconductor analysis system according to the first embodiment of the present invention.
- the semiconductor analysis system 100 includes a FIB-SEM device (processing device) 101, a TEM device 102, and a host control device 103.
- the FIB-SEM device 101 and the TEM device 102 are each configured to be only one, but a plurality of these may be provided.
- the SEM is a scanning electron microscope.
- TEM is a transmission electron microscope
- STEM which will be described later, is a scanning transmission electron microscope.
- the FIB-SEM device 101 is a device having a FIB device for producing (cutting out) a thin film sample SAM for observation from a semiconductor wafer WAF and an SEM device for observing the semiconductor wafer WAF or the produced thin film sample SAM.
- the SEM device may not be included.
- the upper control device 103 is a device that controls the FIB-SEM device 101 and the TEM device 102.
- the upper control device 103 provides basic control such as operation start and stop for the FIB-SEM device 101 and the TEM device 102, output of FIB processing conditions for the semiconductor wafer WAF, and TEM observation conditions for the thin film sample SAM produced by FIB processing. (Acquisition conditions for transmission electron microscope image) is output. Further, the upper control device 103 evaluates the thin film sample SAM based on the TEM image (STEM image) output from the TEM device 102, updates the TEM observation conditions based on the evaluation result, and the like.
- STEM image TEM image
- the main processing in the semiconductor analysis system 100 is as follows.
- the thin film sample SAM is produced from the semiconductor wafer WAF conveyed in the FIB apparatus.
- the prepared thin film sample SAM is placed on a carrier CAR for TEM observation.
- the TEM observation carrier CAR on which the thin film sample SAM is placed is transported from the FIB-SEM device 101 to the TEM device 102, and the TEM device 102 performs structural analysis and defect analysis of the thin film sample SAM.
- the semiconductor wafer WAF may be transported using a container capable of accommodating a plurality of wafers, or may be transported by being placed on a cartridge that can be inserted into the FIB-SEM apparatus 101. Further, the TEM observation carrier CAR may be transported using a container capable of accommodating a plurality of carriers, or may be transported by being placed on a cartridge that can be inserted into the TEM device 102.
- the semiconductor wafer WAF and the TEM observation carrier CAR may be partially or wholly handled by a human or a transport robot.
- FIG. 2 is a schematic configuration diagram showing an example of the FIB-SEM device according to the first embodiment of the present invention.
- the FIB-SEM apparatus 101 includes an ion beam column 301a, an ion beam column controller 331 that controls the ion beam column 301a, an electron beam column 302a, and an electron beam column controller that controls the electron beam column 302a.
- a wafer stage 304 on which a semiconductor wafer WAF can be placed, and a wafer stage controller 334 for controlling the wafer stage 304 are provided.
- the FIB-SEM apparatus 101 includes a substage 306 on which the carrier CAR for TEM observation can be placed, a substage controller 336 that controls the substage 306, and a thin film sample SAM produced on the semiconductor wafer WAF. It includes a probe unit 312 for picking up, a probe unit controller 342 for controlling the probe unit 312, and a sample chamber 307.
- the FIB-SEM apparatus 101 is a charged particle detector 309 for detecting charged particles generated when the ion beam 301b or the electron beam 302b is irradiated on the thin film sample SAM on the semiconductor wafer WAF or the carrier CAR for TEM observation.
- 310 detector controller 339 that controls the charged particle detector 309, detector controller 340 that controls the charged particle detector 310, X-ray detector 311 and X-ray detector control that controls the X-ray detector 311.
- the device 341 and the integrated computer 330 that controls the operation of the entire FIB-SEM device 101 are provided.
- the integrated computer 330 and each control can communicate with each other.
- the FIB-SEM device 101 controls the controller (keyboard, mouse, etc.) 351 and the FIB-SEM device 101 in which the operator inputs various instructions such as the irradiation conditions of the ion beam and the electron beam and the position of the wafer stage 304.
- the GUI screen 353 and the FIB-SEM device 101 are provided with one or more displays 352 and the like for displaying various acquired information including images.
- the state of the FIB-SEM device 101, the acquired information, and the like may be included in the GUI screen 353.
- the ion beam column 301a and the electron beam column 302a are mounted in the sample chamber 307.
- the ion beam 301b that has passed through the ion beam column 301a and the electron beam 302b that has passed through the electron beam column 302a are mainly the intersections of the optical axis 301c of the ion beam column 301a and the optical axis 302c of the electron beam column 302a (cross point 371). ) Is focused.
- the ion beam 301b is not limited to the focused ion beam, and may be a broad ion beam provided with a mask.
- the ion beam column 301a is arranged vertically and the electron beam column 302a is arranged in an inclined manner, but the arrangement is not limited to this.
- the ion beam column 301a may be arranged in an inclined manner
- the electron beam column 302a may be arranged vertically.
- the ion beam column 301a and the electron beam column 302a may be arranged in an inclined manner.
- the FIB-SEM apparatus 101 may have a triple column configuration including a gallium focused ion beam column, an argon focused ion beam column, and an electron beam column.
- an observation system such as an optical microscope or an AFM with an FIB device instead of the electron beam column may be used instead of the FIB-SEM device 101.
- processing and observation may be performed using only the ion beam column. In this case, the number of columns that generate a beam can be reduced, and the equipment cost can be reduced.
- the charged particle detectors 309 and 310 may be composed of a composite charged particle detector capable of detecting electrons and ions.
- a gas injection unit (not shown) or the like is mounted in the sample chamber 307. Further, the FIB-SEM device 101 has each controller (not shown) that controls the gas injection unit and the like.
- the gas injection unit stores depot gas for forming a deposit film on a semiconductor wafer WAF or a thin film sample SAM by irradiation with a charged particle beam, and is supplied into the sample chamber 307 from a nozzle tip (not shown) as needed.
- a protective film or marking can be produced at an arbitrary location on the semiconductor wafer WAF, the thin film sample SAM, or the TEM observation carrier CAR.
- an etching gas that is chemically corroded or carved by irradiation with a charged particle beam may be stored. This etching gas may be used for processing the semiconductor wafer WAF.
- the sample chamber 307 may be equipped with a cold trap, an optical microscope, or the like. Further, in the sample chamber 307, a detector such as a tertiary electron detector, a STEM detector, a backscattered electron detector, a low energy loss electron detector, or the like may be provided in addition to the charged particle detector 309. Further, the sample chamber 307 may be equipped with a mass spectrometer or the like in addition to the X-ray detector 311.
- the TEM device 102 drives the electron beam column 501, the electron beam column controller 521 that controls the electron beam column 501, the sample holder 503 on which the TEM observation carrier CAR is mounted, and the sample holder 503.
- the sample holder stage 504 and the holder stage controller 524 for controlling the sample holder stage 504 are provided.
- the TEM device 102 includes a secondary electron detector 505 that detects electrons emitted from the thin film sample SAM, a detector controller 525 that controls the secondary electron detector 505, and a fluorescent plate 506 that projects a transmission electron microscope image.
- Camera 507 that images the fluorescent screen 506
- Camera controller 527 that controls the camera 507
- X-ray detector 508 that detects the X-rays emitted from the thin film sample SAM
- X-ray detector control that controls the X-ray detector 508.
- the device 528 and the integrated computer 530 that controls the operation of the entire TEM device 102 are provided.
- the integrated computer 530 and each control can communicate with each other.
- the TEM device 102 includes a controller (keyboard, mouse, etc.) 531 for inputting various instructions such as irradiation conditions and the position of the holder stage 504, a GUI screen 533 for controlling the TEM device 102, a state of the TEM device 102, and an image. It is provided with one or a plurality of displays 532 for displaying various acquired information including the above. The state of the TEM device 102, the acquired information, and the like may be included in the GUI screen 533.
- a controller keyboard, mouse, etc.
- GUI screen 533 for controlling the TEM device 102, a state of the TEM device 102, and an image. It is provided with one or a plurality of displays 532 for displaying various acquired information including the above.
- the state of the TEM device 102, the acquired information, and the like may be included in the GUI screen 533.
- FIG. 4 is a schematic configuration diagram showing an example of the electron beam column and its surroundings when used in the TEM mode.
- the electron beam column 501 passes through the electron source 601 for generating the electron beam, the irradiation lens group 602 for irradiating the thin film sample SAM with the electron beam, the objective lens 603, and the thin film sample SAM. It is provided with a projection lens group 604 and the like for projecting an electron beam of. Further, an electron energy loss spectrometer (EELS) 609, an EELS detector 610, and the like are arranged below the electron beam column 501.
- EELS electron energy loss spectrometer
- the electron beam column 501 In this way, all the elements necessary for analysis using the TEM device 102 are mounted on the electron beam column 501 and its surroundings.
- the electron beam spreads over the entire observation region on the thin film sample SAM and is irradiated, and the sample information is acquired from the projected image, the interference image, the diffraction pattern, and the like.
- FIG. 5 is a schematic configuration diagram showing an example of the electron beam column and its surroundings when used in the STEM mode.
- the electron beam column 501 in the STEM mode has a deflection system 605 for scanning and shifting the electron beam and an aperture 611 for controlling the opening angle of the electron beam in each of the main elements of FIG. Is added.
- an annular detector 606 for detecting transmitted electrons scattered at a wide angle and a transmission electron detector 607 for detecting electrons transmitted through the thin film sample SAM are provided.
- the electron beam is focused on the thin film sample SAM, and the sample information is acquired by scanning the observation area.
- a cold trap may be arranged in the vicinity of the thin film sample SAM, or the sample holder 503 may be provided with a cooling mechanism, a heating mechanism, a gas introduction mechanism, or the like.
- the upper control device 103 includes a memory 103a, a position detection unit 103b for detecting the position of a thin film processing region in which the thin film sample SAM is produced, a thickness detection unit 103c for detecting the thickness of the thin film sample SAM, and a thin film. It includes a damage amount detection unit 103d for detecting the damage amount due to sample SAM preparation, a processing end determination unit 103f, and an observation result determination unit 103f.
- the memory 103a is a storage device composed of a non-volatile memory, a hard disk, or the like.
- the memory 103a stores the FIB processing conditions corresponding to the IDs assigned to the semiconductor wafer WAF and the TEM observation carrier CAR described later.
- the FIB processing conditions include, for example, the acceleration voltage of the ion beam, the beam current, the processing region on the semiconductor wafer WAF, the processing order, and the like.
- the TEM observation conditions corresponding to each ID are stored in the memory 103a.
- the TEM observation conditions include a plurality of items.
- the TEM observation conditions include, for example, an observation mode (TEM image observation, diffraction pattern observation, energy dispersive X-ray analysis (EDX analysis), electron energy loss spectroscopy analysis (EELS analysis), etc.), TEM magnification, and the like.
- the camera length, probe current amount (the size of the aperture diameter of the irradiation system), etc. are included.
- the position detection unit 103b, the thickness detection unit 103c, the damage amount detection unit 103d, the machining end determination unit 103f, and the observation result determination unit 103g may be configured by hardware, or may be realized on the processor by executing software. It may be a combination of hardware and software.
- the position detection unit 103b, the thickness detection unit 103c, the damage amount detection unit 103d, the machining end determination unit 103f, and the observation result determination unit 103g will be described later.
- FIG. 6 is a conceptual diagram of a thin film sample produced on a semiconductor wafer.
- the FIB-SEM apparatus 101 one or a plurality of thin film sample SAMs are produced on the semiconductor wafer WAF.
- the thin film sample SAM is connected to the semiconductor wafer WAF by one support portion 803, but the number of support portions 803 may be two or more.
- the support portion 803 is cut from the semiconductor wafer WAF.
- the support portion 803 may be cut by FIB or by cutting with tweezers or the like.
- the TEM observation area 804 is further sliced than the surroundings, but it does not necessarily have to be thinner than the surroundings as long as the thickness allows TEM observation.
- the size of the semiconductor wafer WAF is generally 100 mm to 300 mm
- the size of the thin film sample SAM is several ⁇ m to several tens of ⁇ m
- the thickness of the thin film sample SAM is several ⁇ m
- the thickness of the TEM observation region 804 is several nm to several tens of nm.
- FIG. 7 is a schematic view of a thin film sample mounted on a TEM observation carrier.
- FIG. 7A shows an example when the thin film sample SAM is supported by the TEM observation carrier CARa (CAR) having pillars 911.
- the thin film sample SAM and the pillar 911 are fixed by using, for example, a deposition gas.
- FIG. 7A shows a case where one thin film sample SAM is supported by one pillar 911, but a plurality of thin film sample SAMs may be supported by one pillar 911.
- FIG. 7B shows an example when the thin film sample SAM is gripped by the TEM observation carrier CARb (CAR) having a clip shape.
- CAR TEM observation carrier
- both ends of the thin film sample SAM are gripped by clips 912 composed of a plurality of pillars, but the thin film sample SAM may be gripped only by one end. Further, the clip 912 may grip a plurality of thin film sample SAMs stacked in the vertical direction.
- FIG. 7C shows an example when the thin film sample SAM is supported by the TEM observation carrier CARc configured in a grid pattern.
- a film such as a carbon film or a polymer film having a lamellar structure is stretched on the carrier CARc for TEM observation, and one or more thin film sample SAMs are supported on the film.
- This film does not have to be a uniform film, and may be a film having a large number of pores. Further, a plurality of thin film samples may be supported in one lattice.
- FIG. 8 is a diagram illustrating a method of holding the TEM observation carrier in the TEM apparatus.
- the TEM observation carrier CAR is held in the cartridge 510.
- the cartridge 510 is provided with a convex portion 510a, and the cartridge 510 is fixed to the sample holder 503 by inserting the convex portion 510a into the hole portion 503a of the sample holder 503. Then, the TEM observation of the thin film sample SAM is performed with the sample holder 503 to which the cartridge 510 is attached installed on the electron beam column 501.
- FIG. 9 is a flow chart showing an example of the semiconductor analysis method according to the first embodiment of the present invention. In FIG. 9, each process is shown corresponding to the FIB-SEM device 101, the host control device 103, and the TEM device 102.
- the semiconductor analysis process is started by sending an instruction from the upper control device 103 to the FIB-SEM device 101 and the TEM device 102.
- the semiconductor analysis process is started, first, the semiconductor wafer WAF and the TEM observation carrier CAR are conveyed into the FIB-SEM apparatus 101 (step S1001).
- the FIB-SEM apparatus 101 reads the ID of the conveyed semiconductor wafer WAF and the ID of the TEM observation carrier CAR (step S1002). These IDs are composed of, for example, a barcode or a two-dimensional code. These IDs are formed on a part of the semiconductor wafer WAF or the TEM observation carrier CAR by laser processing or the like. Then, the FIB-SEM device 101 inquires the upper control device 103 about the corresponding FIB processing conditions by outputting the read ID (step S1003).
- the host control device 103 reads the FIB processing conditions from the memory 103a based on the ID output from the FIB-SEM device 101 (step S1004), and outputs the read FIB processing conditions to the FIB-SEM device 101 (step S1005). ..
- the FIB-SEM device 101 sets the thin film sample preparation conditions based on the FIB processing conditions output from the upper control device (step S1006), and prepares the thin film sample SAM according to the set thin film sample preparation conditions (step S1007).
- the FIB-SEM apparatus 101 picks up the thin film sample SAM and conveys it to the TEM observation carrier CAR (step S1008).
- the probe unit 312 may be used, or tweezers may be used.
- the carrier CAR for TEM observation is taken out from the FIB-SEM device 101 (step S1009).
- the carrier CAR for TEM observation may be taken out in a state of being stored in a special case in the FIB-SEM device 101, or may be taken out in a state of being placed on a cartridge that can be attached to the TEM device 102. ..
- the TEM observation carrier CAR taken out from the FIB-SEM device 101 is conveyed to the TEM device 102 (step S1010).
- the carrier CAR for TEM observation may be carried by a human or a robot in part or in whole.
- the TEM device 102 reads the ID of the transported TEM observation carrier CAR (step S1011). Then, the TEM device 102 inquires the upper control device 103 of the corresponding TEM observation condition by outputting the read ID (step S1012).
- the host control device 103 reads the TEM observation condition from the memory 103a based on the ID output from the TEM device 102 (step S1013), and outputs the read TEM observation condition to the TEM device 102 (step S1014).
- the TEM device 102 sets the observation conditions for the thin film sample SAM based on the TEM observation conditions output from the host control device 103 (step S1015), and moves the TEM observation carrier CAR to a predetermined observation position (step S1016). .. Then, the TEM device 102 observes the thin film sample SAM under the set observation conditions (step S1017). In addition, step S1015 and step S1016 may change the order of processing, or may be executed in parallel.
- the TEM device 102 outputs the observation result of the thin film sample SAM to the host control device 103 (step S1018).
- the observation results include TEM images, detection data in each detector, and the like.
- the observation result determination unit 103g of the upper control device 103 evaluates the thin film sample SAM based on the observation result output from the TEM device 102 (step S1019).
- the evaluation items for the thin film sample SAM include, for example, the amount of displacement of the thin film processing region, the amount of thickness deviation of the film thickness, the amount of damage due to FIB processing, and the like.
- CAD data or three-dimensional reconstruction data of the observation area is prepared, and the shape of the thin film sample SAM at multiple points in the observation area is referred to based on the CAD data or the three-dimensional reconstruction data. It is prepared in advance as an image.
- the three-dimensional reconstruction data may be created by using an electron beam tomography method of a TEM image, or may be created by repeating FIB processing and SEM observation.
- the position detection unit 103b of the upper control device 103 matches the TEM image or STEM image (observation result) output from the TEM device 102 with each of the plurality of reference images, and identifies the reference image having the highest correlation value. By doing so, the position of the thin film processing region (the position where the thin film sample SAM is produced) is detected.
- the image matching algorithm may be a method of emphasizing edges, a method of extracting feature points, or a method of using shape information. Then, the position detection unit 103b compares the detection position of the thin film processing region with the set position of the thin film processing region, and calculates the amount of misalignment of the thin film processing region as an evaluation result.
- the thickness deviation of the film thickness of the thin film sample SAM will be described.
- the thickness of the thin film sample SAM is thick, the structure existing behind the structure to be observed also appears in the TEM image or the STEM image at the same time, so that the thickness detection unit 103c of the upper control device 103 outputs from the TEM device 102.
- the film thickness of the thin film sample SAM can be calculated by counting the number of structures in the TEM image or STEM image. Although it is assumed that the structures overlap, such overlap is eliminated by inclining the thin film sample SAM, and the film thickness of the thin film sample SAM can be detected.
- the thickness detection unit 103c can detect the film thickness of the thin film sample SAM by calculating the signal intensity of the HAADF-STEM image.
- the relationship between the film thickness and the signal strength is measured or calculated in advance, and the film thickness-signal strength information relating the film thickness and the signal strength is stored in the memory 103a as a table or a function. Then, the thickness detection unit 103c detects the film thickness of the thin film sample SAM corresponding to the calculated signal intensity based on the film thickness-signal intensity information. Then, the thickness detection unit 103c compares the detected film thickness of the thin film sample SAM with the set film thickness, and calculates the thickness deviation amount of the film thickness as an evaluation result.
- the relationship between the strength of the circular pattern in the FFT pattern of the TEM image or the STEM image and the thickness of the damage layer is measured or calculated in advance, and the strength of the circular pattern and the thickness of the damage layer are determined.
- the related circular pattern strength-damage layer information is stored in the memory 103a as a table or a function. Further, the memory 103a stores the damage layer thickness-damage amount information relating the thickness of the damage layer and the damage amount.
- the damage amount detection unit 103d calculates the thickness of the damage layer from the calculated circular pattern strength based on the circular pattern strength-damage layer information. Then, the damage amount detection unit 103d calculates the damage amount from the calculated thickness of the damage layer based on the damage layer thickness-damage amount information.
- the memory 103a may store pattern strength-damage amount information that associates the strength of the circular pattern with the damage amount.
- the damage amount detection unit 103d can directly calculate the damage amount from the strength of the circular pattern based on the pattern strength-damage amount information.
- step S1020 Update of TEM observation conditions >> Next, step S1020 will be described.
- the TEM observation conditions for the subsequent thin film sample SAM are updated based on the evaluation result in step S1019.
- the host control device 103 updates the TEM observation conditions by changing the matching image used for specifying the TEM observation position, offsetting the observation position according to the amount of misalignment, and the like.
- the upper control device 103 updates the TEM observation conditions by changing the matching image or the like based on the evaluation result with respect to the thickness deviation amount and the damage amount of the thin film sample SAM.
- the upper control device 103 may generate a learning model for TEM observation by associating the TEM image of the thin film sample SAM with the TEM observation result using the TEM image.
- This learning model reflects the results of comparing the cases where the TEM observation is successful and the cases where the TEM observation is unsuccessful with the respective TEM images. From the acquired TEM image, the host control device 103 can determine whether or not to update the TEM observation conditions using the learning model. Further, the upper control device 103 can also calculate a specific value of the TEM observation condition to be updated by using the learning model. This makes it possible to improve the success rate of TEM observation for the subsequent thin film sample SAM.
- the focus value or the like updated by the autofocus adjustment can be commonly used for other thin film sample SAMs mounted on the same TEM observation carrier CAR. In this case, it is possible to improve the success rate of TEM observation for the subsequent thin film sample SAM in a short time.
- the host control device 103 determines that it is not necessary to update the TEM observation conditions, it is desirable to record in the memory 103a that the TEM observation conditions have not been updated. This record can be used as information indicating the reliability of the registered TEM observation conditions.
- the upper control device 103 evaluates the thin film sample SAM based on the TEM image, and updates the processing conditions based on the evaluation result of the thin film sample SAM.
- the observation result of the thin film sample SAM by the TEM device 102 can be fed back to the TEM device 102 to change the TEM observation conditions, so that the FIB processing conditions can be changed, so that the subsequent thin film sample can be changed. It is possible to improve the speed and accuracy of automatic TEM observation with respect to SAM.
- the search time of the observation region can be shortened by feeding back the amount of misalignment detected in the preceding thin film sample SAM to the TEM observation of the subsequent thin film sample SAM.
- the production position of the thin film sample SAM deviates significantly from the set position, it is possible that the TEM observation does not end normally (when the automatic observation does not succeed). Even in this case, if the TEM image includes a region to be observed, desired data can be acquired at the user's discretion. Further, by having the upper control device 103 learn the result determined by the user as learning data, the TEM observation in the subsequent thin film sample SAM can be normally completed, and the labor of the user can be reduced.
- the speed of TEM observation can be improved.
- the host control device 103 detects the position of the thin film processing region in the thin film sample SAM from the TEM image, compares the detection position of the thin film processing region with the set position of the thin film processing region, and compares the position of the thin film processing region with the set position of the thin film processing region.
- the amount of misalignment of the detection position with respect to the set position is calculated as the evaluation result of the thin film sample. According to this configuration, it is possible to appropriately update the TEM observation conditions based on the evaluation result.
- the upper control device 103 offsets the observation position of the thin film sample SAM in the TEM device 102 according to the amount of misalignment of the thin film processing region. According to this configuration, the observation position of the thin film sample SAM can be corrected to an appropriate position.
- the host control device 103 detects the film thickness of the thin film sample SAM from the TEM image, compares the detected film thickness of the thin film sample SAM with the set film thickness, and detects the set film thickness.
- the amount of thickness deviation of the film thickness is calculated as an evaluation result. According to this configuration, it is possible to appropriately update the TEM observation conditions based on the evaluation result.
- the host control device 103 calculates the amount of damage to the thin film sample SAM due to processing from the TEM image as an evaluation result. According to this configuration, it is possible to appropriately update the TEM observation conditions based on the evaluation result.
- the upper control device 103 updates the acquisition condition of the transmission electron microscope image by changing the matching image used for specifying the observation position in the TEM device 102. According to this configuration, it is possible to appropriately update the TEM observation conditions based on the evaluation result.
- the TEM device 102 acquires a STEM image. According to this configuration, an image that cannot be acquired by a TEM image can be acquired, and a more accurate evaluation of the thin film sample SAM becomes possible.
- FIG. 10 is a flow chart showing an example of the semiconductor analysis method according to the second embodiment of the present invention.
- step S1001 and step S1101 are executed in parallel.
- the FIB-SEM device 101 reads the ID of the semiconductor wafer WAF and the ID of the carrier CAR for TEM observation.
- the semiconductor wafer WAF transported to the FIB-SEM device 101 is specified by the host control device 103. Therefore, reading the ID of the semiconductor wafer WAF is not essential.
- the ID of the TEM observation carrier CAR if the upper control device 103 can manage the TEM observation carrier CAR, it is not essential to read the ID of the TEM observation carrier CAR. In this case, a TEM observation carrier CAR that does not have an ID can also be used.
- step S1101 the host control device 103 reads out the FIB processing conditions suitable for the semiconductor wafer WAF conveyed to the FIB-SEM device 101 among the FIB processing conditions stored in the memory 103a.
- the upper control device 103 since the semiconductor wafer WAF transported to the FIB-SEM device 101 is specified in the upper control device 103, the upper control device 103 has FIB processing conditions corresponding to the ID of the semiconductor wafer WAF to be processed. Is read from the memory 103a. Then, the host control device 103 outputs the read FIB processing conditions to the FIB-SEM device 101 (step S1005). At this time, the host control device 103 may output the ID of the corresponding semiconductor wafer WAF together with the FIB processing conditions.
- step S1102 the FIB-SEM device 101 collates the FIB processing conditions output from the host control device 103 with the ID of the semiconductor wafer. However, since the host control device 103 specifies the semiconductor wafer WAF transported to the FIB-SEM device 101, this step can be omitted as appropriate.
- Steps S1006 to S1007 are the same as those in the first embodiment. After step S1007, step S1103 is executed.
- step S1104 the processing end determination unit 103f of the upper control device 103 processes whether to continue the thin film sample production or end the thin film sample production based on the thin film sample preparation result output from the FIB-SEM device 101. Judge the necessity of continuation.
- step S1008 is executed.
- the reference image used for determining the necessity of continuing processing may be stored in the host control device 103, and this reference image may be used for various processes during TEM observation.
- step S1105 the FIB-SEM device 101 outputs the transfer result of the thin film sample SAM to the TEM observation carrier CAR to the host control device 103. Then, the TEM observation carrier CAR on which the thin film sample SAM is placed is taken out from the FIB-SEM device 101. The output of the transfer result of the thin film sample SAM and the transfer of the carrier CAR for TEM observation do not have to be performed at the same time.
- the upper control device 103 reads out the TEM observation conditions suitable for the TEM observation of the thin film sample SAM based on the transport information of the observation carrier CAR (step S1107), and outputs the read TEM observation conditions to the TEM device 102 (step S1107).
- the TEM observation conditions include not only the observation conditions read from the host control device 103 but also the information generated based on the transport information of the TEM observation carrier CAR output from the FIB-SEM device 101. good. This information includes, for example, the position where the thin film sample SAM is placed in the carrier CAR for TEM observation.
- the semiconductor wafer WAF on which the thin film sample SAM is produced is conveyed to the ALTS device 201.
- the ALTS device 201 transfers the thin film sample SAM to the TEM observation carrier CAR in the device. At that time, the ALTS device 201 performs the transfer while referring to the position information of the thin film sample SAM on the semiconductor wafer WAF.
- the semiconductor wafer WAF may be transported to the ALTS device 201 for each container or cartridge described above. Further, as described above, the semiconductor wafer WAF and the TEM observation carrier CAR may be partially or wholly handled by a human or a transport robot.
- the upper control device 103 is described as an independent component, but even if a part or all of the functions of the upper control device 103 are carried by the FIB-SEM device 101, the TEM device 102, and the ALTS device 201. good.
- FIG. 12 is a schematic configuration diagram showing an example of the ALTS device of FIG.
- the ALTS device 201 controls the first optical microscope controller 431, the second optical microscope 402a, and the second optical microscope 402a for controlling the first optical microscope 401a and the first optical microscope 401a.
- a second optical microscope controller 432 for this purpose, a wafer stage 404 on which a semiconductor wafer WAF can be placed, and a wafer stage controller 434 for controlling the wafer stage 404 are provided.
- the ALTS device 201 controls the first camera 410, the second camera 411, the first camera controller 440 that controls the first camera 410, and the second camera control that controls the second camera 411 for acquiring the optical microscope image. It includes a device 441, a light source 409 for irradiating the thin film sample SAM with light, a light source controller 439 for controlling the light source 409, and an integrated computer 430 for controlling the operation of the entire ALTS device 201.
- the integrated computer 430 and each control can communicate with each other.
- the ALTS device 201 is a controller (keyboard, mouse, etc.) 451 for which the operator inputs various instructions such as irradiation conditions and the position of the wafer stage 404, a GUI screen 453 for controlling the ALTS device 201, and a state of the ALTS device 201.
- One or more displays 452 that display various acquired information including images. The state of the ALTS device 201, the acquired information, and the like may be included in the GUI screen 453.
- the ALTS device 201 may be provided with a mechanism for scanning the focused light on the thin film sample SAM, and may be configured so that a scanned image can be acquired.
- the thin film sample SAM to be observed is mainly observed at a position (cross point 471) where the optical axis 401c of the first optical microscope 401a and the optical axis 402c of the second optical microscope 402a intersect. This makes it possible to grasp the three-dimensional positional relationship of the observation target. For example, it is possible to accurately grasp the positional relationship between the thin film sample SAM on the semiconductor wafer WAF and the probe unit 412 and tweezers (not shown).
- the sample chamber 407 is provided, the sample chamber 407 can be omitted because a closed space is not required when observing in the atmosphere.
- the wafer stage 404 and the substage 406 can move in a plane or rotate under the control of the corresponding wafer stage controller 434 and the substage controller 436.
- the probe unit 412 may not only pick up the thin film sample SAM produced on the semiconductor wafer WAF, but may also have functions such as a contact detection sensor and a stress sensor on the wafer surface. Further, in order to pick up the thin film sample SAM, tweezers may be used instead of the probe.
- the first optical microscope 401a and the second optical microscope 402a are arranged in the sample chamber 407, but the type of microscope is not particularly limited for the purpose of observing the thin film sample SAM.
- SEM devices may be used for some or all microscopes.
- a configuration similar to that in FIG. 2 can be considered.
- a configuration in which a second electron beam column is mounted in the sample chamber 307 instead of the ion beam column 301a in FIG. 2 can be considered.
- the electron source of the electron beam column used in the ALTS apparatus 201 may be any of a field emission type, a Schottky type, and a thermionic type.
- FIG. 13 and 14 are flow charts showing an example of the semiconductor analysis method according to the third embodiment of the present invention.
- the steps of the FIB-SEM device 101 and the ALTS device 201 are shown in the left column. 13 to 14 are similar to the flow of FIG. 9 of the first embodiment.
- the semiconductor wafer WAF is conveyed into the FIB-SEM device 101 (step S1301), and the FIB-SEM device 101 reads the ID of the semiconductor wafer WAF (step S1302).
- steps S1003 to S1007 are executed.
- step S1303 is executed.
- the semiconductor wafer WAF is taken out from the FIB-SEM device 101 (step S1303) and conveyed to the ALTS device 201 (step S1304).
- the semiconductor wafer WAF may be conveyed by the semiconductor wafer WAF alone, or may be collectively conveyed by using a case capable of accommodating a plurality of semiconductor wafer WAFs. Further, the semiconductor wafer WAF may be conveyed by a human or a robot.
- step S1305 the TEM observation carrier CAR is conveyed to the ALTS device 201. Then, the ALTS device 201 reads the ID of the carrier CAR for TEM observation (step S1306).
- this step is not indispensable because an ID may not be assigned to the TEM observation carrier CAR.
- step S1307 the ALTS device 201 inquires the upper control device 103 about the thin film sample transport conditions that define the conditions for transporting the thin film sample SAM from the semiconductor wafer WAF to the TEM observation carrier CAR.
- the thin film sample transfer conditions may include the processed shape in the FIB-SEM device 101, the SEM image after the processing in the FIB-SEM device 101, and the like, and the position information of the thin film processed on the semiconductor wafer WAF. May only be included.
- the thin film sample transport conditions may include only the drive conditions of the probe unit 412 and tweezers. Further, when the thin film sample transfer condition is stored in the ALTS device 201, the thin film sample transfer condition may include only an ID that specifies an appropriate thin film sample transfer condition.
- the upper control device 103 reads out the thin film sample transfer conditions (step S1308) and outputs the read thin film sample transfer conditions to the ALTS device 201 (step S1309) in response to the inquiry from the ALTS 201.
- the ALTS device 201 sets the thin film sample transfer conditions output from the host control device 103 (step S1310), and sets the drive conditions for each component based on the thin film sample transfer conditions. Then, the ALTS apparatus 201 transports the thin film sample SAM on the semiconductor wafer WAF to the TEM observation carrier CAR according to the set thin film sample transport conditions (driving conditions) (step S1311).
- the ALTS apparatus 201 may acquire an SEM image before the thin film sample is conveyed and an SEM image after the thin film sample is conveyed, and record these images as the transfer information. Further, the ALTS device 201 may output the recorded transport information and the ID of the TEM observation carrier CAR read in step S1306 to the host control device 103. In this case, the host control device 103 can use the obtained information in a subsequent process.
- step S1312 steps S1010 shown in FIG. 14 and the subsequent steps are executed.
- the fourth embodiment will be described.
- the ALTS device 201 is added to the semiconductor analysis system.
- 15 and 16 are flow charts showing an example of the semiconductor analysis method according to the fourth embodiment of the present invention.
- the steps of the FIB-SEM device 101 and the ALTS device 201 are shown in the left column. 15 to 16 are similar to the flow of FIG. 10 of the second embodiment.
- steps S1101 and S1301 are executed in parallel.
- steps S1005 and S1302 are completed, step S1102 is executed.
- step S1104 when the SEM image of the FIB processed cross section and the reference image match (YES), the process proceeds to step S1401.
- the wafer information may include various information such as, for example, that the FIB processing has been completed, that the semiconductor wafer WAF has been taken out from the FIB-SEM apparatus 101, and the time when each process has been performed. Further, the wafer information may include an SEM image or a SIM image after FIB processing. Further, the wafer information may be output automatically or manually using a network, or may be output via a storage medium.
- step S1401 steps S1402 and S1403 are executed in parallel.
- step S1402 the semiconductor wafer WAF is conveyed to the ALTS device 201.
- step S1305 is executed.
- step S1403 the host control device 103 acquires the wafer information output from the FIB-SEM device 101.
- the wafer information also includes the location of the semiconductor wafer WAF.
- information on the location of the semiconductor wafer WAF is required.
- step S1404 the host controller 103 reads out the thin film sample transfer conditions.
- the thin film sample transport conditions to be read may include all the contents stored in the memory 103a in advance, or may include information generated based on the information received from the FIB-SEM apparatus 101.
- the thin film sample transfer conditions stored in the upper control device 101 may be an ID that specifies the thin film sample transfer conditions stored in the ALTS device 201.
- step S1309 is executed. Then, after steps S1306 and S1309, steps S1310 to S1311 are executed. After step S1311, step S1405 is executed.
- step S1405 the ALTS device 201 outputs the thin film sample transfer result to the host control device 103. Further, the TEM observation carrier CAR on which the thin film sample SAM is placed is conveyed to the TEM device 201. The output of the thin film sample transfer result and the transfer of the carrier CAR for TEM observation do not have to be performed at the same time.
- the thin film sample transfer result may include the ID of the TEM observation carrier CAT on which the thin film sample SAM is mounted, or may include the SEM image after the thin film sample transfer.
- the thin film sample transfer result includes the case and the case.
- An optical microscope image such as a carrier CAR for TEM observation after being mounted on the cartridge 500 may be included.
- step S1405 steps S1010 and S1106 shown in FIG. 16 and the subsequent steps are executed.
- the present invention is not limited to the above-described embodiment, and includes various modifications. Further, it is possible to replace a part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. ..
- each member and the relative size described in the drawings are simplified and idealized in order to explain the present invention in an easy-to-understand manner, and may have a more complicated shape in mounting.
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Abstract
Description
<半導体解析システムの構成>
図1は、本発明の実施の形態1に係る半導体解析システムの一例を示す概略構成図である。半導体解析システム100は、FIB-SEM装置(加工装置)101、TEM装置102、および上位制御装置103を含む。なお、図1では、FIB-SEM装置101およびTEM装置102が、それぞれ1台のみの構成となっているが、これらがそれぞれ複数設けられてもよい。ここで、SEMとは走査型電子顕微鏡である。また、TEMとは透過型電子顕微鏡であり、後述するSTEMとは走査型透過電子顕微鏡である。
図2は、本発明の実施の形態1に係るFIB-SEM装置の一例を示す概略構成図である。図2に示すように、FIB-SEM装置101は、イオンビームカラム301a、イオンビームカラム301aを制御するイオンビームカラム制御器331、電子ビームカラム302a、電子ビームカラム302aを制御する電子ビームカラム制御器332、半導体ウエハWAFを載置することが可能なウエハステージ304、ウエハステージ304を制御するウエハステージ制御器334を備えている。
図3は、本発明の実施の形態1に係るTEM装置の一例を示す概略構成図である。図3のTEM装置102は、TEMモードで使用することが可能であるし、モードを切り替えることによりSTEMモードで使用することも可能である。
上位制御装置103は、図1に示すように、メモリ103a、薄膜試料SAMを作製された薄膜加工領域の位置を検出する位置検出部103b、薄膜試料SAMの厚みを検出する厚み検出部103c、薄膜試料SAM作製によるダメージ量を検出するダメージ量検出部103d、加工終了判定部103f、観察結果判定部103fを備えている。
図6は、半導体ウエハ上に作製された薄膜試料の概念図である。FIB-SEM装置101内において、半導体ウエハWAF上には1つ又は複数の薄膜試料SAMが作製される。本実施の形態では、薄膜試料SAMは、半導体ウエハWAFと1つの支持部803とで連結されているが、支持部803の個数は2つ以上でも構わない。
次に半導体解析システム100を用いた半導体解析方法について説明する。図9は、本発明の実施の形態1に係る半導体解析方法の一例を示すフロー図である。図9では、各工程がFIB-SEM装置101、上位制御装置103、TEM装置102と対応して示されている。
上位制御装置103の観察結果判定部103gは、TEM装置102から出力された観察結果に基づき薄膜試料SAMに対する評価を行う(ステップS1019)。以下、薄膜試料SAMに対する測定方法について詳しく説明する。薄膜試料SAMに対する評価項目には、例えば薄膜加工領域の位置ずれ量、膜厚の厚みずれ量、FIB加工によるダメージ量等が含まれる。
次に、ステップS1020について説明する。ステップS1020では、ステップS1019における評価結果に基づき、後続の薄膜試料SAMに対するTEM観察条件の更新が行われる。
上位制御装置103は、薄膜試料SAMのTEM画像と、TEM画像を用いたTEM観察結果とを対応させることで、TEM観察用の学習モデルを生成してもよい。この学習モデルには、TEM観察が成功した場合およびTEM観察が失敗した場合と、それぞれのTEM画像とを対比した結果が反映される。上位制御装置103は、取得したTEM画像から、学習モデルを用いてTEM観察条件を更新するか否かを判断することができる。また、上位制御装置103は、学習モデルを用いて更新するTEM観察条件の具体的な値を算出することも可能である。これにより、後続の薄膜試料SAMに対するTEM観察の成功率を向上させることが可能である。
本実施の形態によれば、上位制御装置103は、TEM画像に基づく薄膜試料SAMに対する評価を行い、薄膜試料SAMの評価結果に基づいて加工条件を更新する。この構成によれば、TEM装置102による薄膜試料SAMの観察結果をTEM装置102へフィードバックしてTEM観察条件を変更することができるので、FIB加工条件を変更することができるので、後続の薄膜試料SAMに対する自動でのTEM観察の速度および精度を向上させることが可能となる。
次に、実施の形態2について説明する。なお、以下では、前述の実施の形態と重複する箇所については原則として説明を省略する。本実施の形態では、FIB-SEM装置101に搬送される半導体ウエハWAFが、上位制御装置103において特定されていることを前提としている。このため、本実施の形態では、半導体解析方法の一部のフローが実施の形態1と異なっている。
次に、実施の形態3について説明する。図11は、本発明の実施の形態3に係る半導体解析システムの一例を示す概略構成図である。図11の半導体解析システム200は、図1の半導体解析システム100にALTS(Auto Lamella Transfer System:自動薄膜試料搬送装置)装置201が追加された構成となっている。ALTS装置201は、半導体ウエハWAF上に作製された薄膜試料SAMをTEM観察用キャリアCARに自動で移し替える装置である。FIB-SEM装置101、ALTS装置201、およびTEM装置102は、上位制御装置103を介して互いに通信可能である。図11では、FIB-SEM装置101、ALTS装置201、およびTEM装置102が、それぞれ1台のみの構成となっているが、これらがそれぞれ複数設けられてもよい。
図12は、図11のALTS装置の一例を示す概略構成図である。図12に示すように、ALTS装置201は、第1光学顕微鏡401a、第1光学顕微鏡401aを制御するための第1光学顕微鏡制御器431、第2光学顕微鏡402a、第2光学顕微鏡402aを制御するための第2光学顕微鏡制御器432、半導体ウエハWAFを載置することが可能なウエハステージ404、ウエハステージ404を制御するウエハステージ制御器434を備えている。
次に半導体解析システム200を用いた半導体解析方法について説明する。図13および図14は、本発明の実施の形態3に係る半導体解析方法の一例を示すフロー図である。なお、図13では、左側の欄に、FIB-SEM装置101およびALTS装置201の工程が示されている。図13~図14は、実施の形態1の図9のフローと類似している。
次に、実施の形態4について説明する。本実施の形態も、実施の形態3と同様、半導体解析システムにALTS装置201が追加されている。図15および図16は、本発明の実施の形態4に係る半導体解析方法の一例を示すフロー図である。なお、図15では、左側の欄に、FIB-SEM装置101およびALTS装置201の工程が示されている。図15~図16は、実施の形態2の図10のフローと類似している。
Claims (7)
- 半導体ウエハを加工して観察用の薄膜試料を作製する加工装置と、
前記薄膜試料の透過型電子顕微鏡像を取得する透過型電子顕微鏡装置と、
前記加工装置および前記透過型電子顕微鏡装置を制御する上位制御装置と、
を備え、
前記上位制御装置は、前記透過型電子顕微鏡像に基づく前記薄膜試料に対する評価を行い、前記薄膜試料の評価結果に基づいて前記透過型電子顕微鏡像の取得条件を更新し、更新した取得条件を前記透過型電子顕微鏡装置へ出力する、
半導体解析システム。 - 請求項1に記載の半導体解析システムにおいて、
前記上位制御装置は、前記透過型電子顕微鏡像から前記薄膜試料における薄膜加工領域の位置を検出し、前記薄膜加工領域の検出位置と前記薄膜加工領域の設定位置とを比較し、前記設定位置に対する前記検出位置の位置ずれ量を前記薄膜試料の前記評価結果として算出する、
半導体解析システム。 - 請求項2に記載の半導体解析システムにおいて、
前記上位制御装置は、前記位置ずれ量に応じて、前記透過型電子顕微鏡における前記薄膜試料の観察位置のオフセットを行うことによりTEM観察条件の更新を行う、
半導体解析システム。 - 請求項1に記載の半導体解析システムにおいて、
前記上位制御装置は、前記透過型電子顕微鏡像から前記薄膜試料の膜厚を検出し、前記薄膜試料の検出膜厚と設定膜厚とを比較し、前記設定膜厚に対する前記検出膜厚の厚みずれ量を評価結果として算出する、
半導体解析システム。 - 請求項1に記載の半導体解析システムにおいて、
前記上位制御装置は、前記透過型電子顕微鏡像から加工よる前記薄膜試料のダメージ量を前記評価結果として算出する、
半導体解析システム。 - 請求項1に記載の半導体解析システムにおいて、
前記上位制御装置は、前記透過型電子顕微鏡における観察位置の特定に用いるマッチング画像を変更することで、前記透過型電子顕微鏡像の取得条件を更新する、
半導体解析システム。 - 請求項1に記載の半導体解析システムにおいて、
前記透過型電子顕微鏡装置は、走査型透過電子顕微鏡像を前記透過型電子顕微鏡像として取得する、
半導体解析システム。
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