WO2002075806A1 - Procede d'inspection d'une plaquette, dispositif a faisceau ionique focalise et dispositif a faisceau electronique de transmission - Google Patents

Procede d'inspection d'une plaquette, dispositif a faisceau ionique focalise et dispositif a faisceau electronique de transmission Download PDF

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Publication number
WO2002075806A1
WO2002075806A1 PCT/JP2001/002131 JP0102131W WO02075806A1 WO 2002075806 A1 WO2002075806 A1 WO 2002075806A1 JP 0102131 W JP0102131 W JP 0102131W WO 02075806 A1 WO02075806 A1 WO 02075806A1
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WIPO (PCT)
Prior art keywords
sample
observation
recipe
wafer
sample holder
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Application number
PCT/JP2001/002131
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English (en)
Japanese (ja)
Inventor
Fumio Mizuno
Tsuyoshi Ohnishi
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Priority to PCT/JP2001/002131 priority Critical patent/WO2002075806A1/fr
Priority to JP2002574123A priority patent/JPWO2002075806A1/ja
Publication of WO2002075806A1 publication Critical patent/WO2002075806A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Definitions

  • the present invention relates to an in-line inspection for inspecting the thickness of a deposited film, a pattern dimension, a pattern overlay accuracy, a hole conduction state, and the like of a wafer being manufactured in the manufacture of a semiconductor device, an imaging device, and a display device.
  • the density of semiconductor devices has been increasing at a rate of approximately 2.5 times Z three years, and the transistor density of AS ICs listed in the Semiconductor Technology Portfolio is 1999 of 20M T from r ⁇ Roh cm 2, in 2002 54MT r. / cm 2, 2005 years in the 1 33 MT r. / cm ⁇ and in 201 one year 81 1 MT r. become Roh cm 2 and the prediction It has been.
  • the structure of MOS transistors is expected to shift from current planar transistors to vertical transistors. As shown in FIG. 17, the vertical transistor has a structure in which source, gate and drain are arranged in a vertical direction.
  • the measurement of gate length that is, the measurement of the most important parameter that determines transistor performance, is changed to measurement of film thickness instead of measurement of pattern dimensions.
  • Future candidates for more accurate film thickness measurement methods include: (1) an ellipsometer that uses UV light as the irradiation light, (2) a method of irradiating X-rays to the measurement location and measuring reflected X-rays, etc. ) A method of irradiating a measurement location with a laser beam to measure elastic waves, etc., and (4) A technique of irradiating a measurement location with a medium-speed ion beam to measure scattered ions and the like.
  • the gate length measurement accuracy required for a vertical transistor with a gate length of 50 nm is less than 1 nm, which is required.
  • the only methods with spatial resolution that can achieve film thickness measurement accuracy are atomic force microscope (AFM) and transmission electron microscope (TEM) or scanning transmission electron microscope (STEM) that form transmission electron images. is there.
  • AFM atomic force microscope
  • TEM transmission electron microscope
  • STEM scanning transmission electron microscope
  • an object of the present invention is to provide in-line inspection means using TEM or STEM for enabling highly accurate film thickness measurement in a local region of about several hundred nm. Disclosure of the invention
  • TEM or STEM is the only solution that can achieve high-accuracy film thickness measurement in an extremely small area.
  • increasing throughput is the biggest challenge.
  • the focused ion beam system F IB device
  • the actual time required for the inline inspection is determined by the time required to prepare the sample in the FIB apparatus.
  • the FIB device cuts out samples from multiple specified locations on the wafer according to a pre-registered sample preparation recipe.
  • the position is automatically positioned, the sample is automatically cut out, and the cut sample is automatically mounted on an observation sample holder used for TEM or STEM, and a recipe for observing the sample with TEM or STEM is created.
  • TEM or STEM in order to enable sample observation in a short time, multiple samples mounted on the observation sample holder are prepared according to the observation recipe input to the TEM or STEM by the FIB device. Automatically align the observation area and acquire a predetermined sample image.
  • the parallelism between the electron beam incident direction and the observation film surface can be confirmed and corrected.
  • a cross-sectional observation sample composed of a plurality of pattern groups whose observation patterns are slightly shifted in the direction perpendicular to the processing cross section is used so that an observation cross section accurately formed at a predetermined position can be obtained.
  • FIB device targets a plurality of specified locations on a wafer according to a pre-registered sample preparation recipe.
  • the observation area is automatically set for multiple samples mounted on the observation sample holder according to the observation recipe created by the FIB device and input to the TEM or STEM.
  • High-precision in-line film thickness measurement for a local region of several hundred nm by acquiring a predetermined sample image and obtaining observation data. It becomes possible.
  • inspected samples can be stored, they can be removed from storage and re-examined in the event of a yield or reliability problem at a later date. This simplifies failure analysis, which is difficult without physical components.
  • the wafer inspection method, focused ion beam device, and transmitted electron beam device according to the present invention are as follows.
  • a step of automatically positioning the sample on the observation sample holder according to the read observation recipe And a step of acquiring predetermined observation data from the positioned sample according to the observation recipe.
  • rapid sample preparation becomes possible by appropriately using a shaped beam, a variable shaped beam, or a cell projection beam as a focused ion beam.
  • a cell projection can be composed of at least a C-shape and a spot.
  • TEM or STEM can be used as the transmission electron beam device. It is preferable that the transmission of the observation recipe between the focused ion beam apparatus that executes the sample preparation step and the transmission electron beam apparatus that executes the sample observation step is performed online via a LAN or the like.
  • the step of creating an observation recipe includes the steps of reading a code written on the observation sample holder, and mounting the code on the observation sample holder using the code as a key.
  • a method for inspecting a wafer comprising creating a recipe for a transmission electron beam apparatus for observing a sample that has been etched.
  • the code on the sample which is the unique number of the sample attached to the sample using the FIB, is used as a key, and the recipe for the transmitted electron beam device for observing the sample is automatically set. Alternatively, it may be created semi-automatically.
  • Obtained observation data includes film thickness measurement, pattern shape / dimension measurement, pattern overlay measurement, wiring connection conduction state measurement, particle size measurement, dopant concentration profile measurement, and defects compared to a predetermined reference image. Can be used for measurement.
  • the measured data can be used for process management and device characteristic analysis.
  • a sample stage that can hold and move a wafer, a stage driving unit that drives the sample stage, a unit that forms a focused ion beam, and that the focused ion beam is placed on a wafer held by the sample stage.
  • the focused ion beam apparatus including a deflector for scanning, a detector for detecting a sample signal generated from the sample by the focused ion beam irradiation, a sample manipulator for sample handling, and a control unit, The stage driving unit and / or the stage driving unit according to a pre-registered sample preparation recipe.
  • a function of controlling the deflector to automatically position a sample cutting portion on a wafer a function of controlling a predetermined sample using the focused ion beam; and a function of controlling the sample manipulator to cut the sample.
  • a focused ion beam apparatus having a function of creating an observation recipe to be used in the observation apparatus using the read information stored in advance.
  • the cut sample may be marked with a code for identifying the sample with a focused ion beam.
  • the sample cut from the wafer is once fixed to a sample manipulator, and then moved to one or both of the sample manipulator and the observation sample holder to be mounted on a predetermined address position of the observation sample holder.
  • the sample can be fixed to the sample manipulator using the ion beam assisted film deposition method or the electrostatic adsorption between the manipulator and the sample.
  • a sample stage that holds and moves an observation sample holder on which a sample is mounted, a stage drive unit that drives the sample stage, and a unit that irradiates the sample by narrowing down the electron beam.
  • a transmission electron beam device including a deflector for deflecting the electron beam, a transmission electron detector for detecting an electron beam transmitted through a sample, and a control unit, wherein the control unit is a focused ion beam device.
  • the control unit is a focused ion beam device.
  • Observation data can include sample image data, composition analysis data, structural analysis data, electronic state analysis data, and the like.
  • the transmission electron beam apparatus can include a characteristic X-ray analyzer, an Auger electron spectrometer, and an energy analyzer for characteristic loss electrons.
  • the composition analysis data can be obtained by equipping the transmission electron beam device with, for example, a characteristic X-ray analyzer or an energy spectrometer, and the structural analysis data can be obtained by equipping a transmission electron two-dimensional array detector.
  • the electronic state analysis data can be obtained by providing a transmission electron energy spectrometer.
  • the obtained measurement data can be used for process management and device characteristic analysis.
  • Observation data, measurement data, process management data, etc. can be output as electronic data.
  • the process management data to be output can be, for example, a wafer map describing pass / fail of the inspection, or data summarized as an inspection failure rate, the number of inspection failures, and a defect classification result.
  • the transmitted electron beam device preferably has a function of calibrating the observation magnification by a crystal lattice image.
  • (6) means for loading / unloading the sample holder, storage means for storing a sample observation recipe, sample holder identification means for identifying the sample holder, and control means, wherein the control means Reading an observation recipe corresponding to the sample holder from the storage unit based on the identification result by the sample holder identification unit, and controlling each unit based on the observation recipe to observe the sample.
  • Transmission electron beam device means for loading / unloading the sample holder, storage means for storing a sample observation recipe, sample holder identification means for identifying the sample holder, and control means, wherein the control means Reading an observation recipe corresponding to the sample holder from the storage unit based on the identification result by the sample holder identification unit, and controlling each unit based on the observation recipe to observe the sample.
  • Transmission electron beam device means for loading / unloading the sample holder, storage means for storing a sample observation recipe, sample holder identification means for identifying the sample holder, and control means, wherein the control means Reading an observation recipe corresponding to the sample holder from the storage
  • the cross-section observation sample prepared by the focused ion beam apparatus can be prepared so that the observation pattern is composed of a plurality of pattern groups that are slightly shifted in a direction perpendicular to the processing cross section.
  • the most appropriate pattern is selected by using the pattern with the largest dimension as the pattern to be inspected.
  • the angle of incidence between the cross-section and the observation beam can be obtained from the transmission image.
  • the information on the incident angle of the observation beam can be used to control the tilt angle of the sample or to control the incident beam by a deflector to control the beam incident angle to a predetermined value.
  • the measurement data can be corrected based on the obtained incident angle.
  • FIG. 1 is a diagram showing a schematic configuration of an example of a FIB device according to the present invention.
  • FIG. 2 is a diagram showing a schematic configuration of a TEM or STEM according to the present invention.
  • FIG. 3 is a conceptual diagram of an inline inspection in a semiconductor device manufacturing process according to the present invention.
  • FIG. 4 is a flowchart illustrating a process for preparing an observation sample holder.
  • FIG. 5 is a flowchart illustrating a sample preparation process and an observation recipe generation process.
  • FIG. 6 is an explanatory diagram of a step of cutting out a sample from a wafer using a focused ion beam.
  • FIG. 7 is a diagram showing an example of a cell projection aperture for obtaining a shaped ion beam.
  • FIG. 8 is a schematic diagram showing an example of a sample fixed to an observation sample holder.
  • FIG. 9 is a diagram showing an example of items described in the observation recipe.
  • FIG. 10 is a diagram for explaining an example of how to cut out a sample using the FIB apparatus.
  • FIG. 11 is a diagram showing an example of a cross-sectional sample with a step.
  • FIG. 12 is a diagram showing an example of a transmission image of a stepped cross-sectional sample.
  • FIG. 13 is a flowchart showing a process flow in TEM or STEM according to the present invention.
  • FIG. 14 is a diagram for explaining an application example of the inspection in the present invention.
  • FIG. 15 is a diagram illustrating an output example of the inspection result.
  • FIG. 16 is a diagram showing an example of the arrangement of the sample storage.
  • FIG. 17 is a diagram schematically illustrating the structure of a vertical MOS transistor. BEST MODE FOR CARRYING OUT THE INVENTION
  • FIG. 1 shows a schematic configuration of an example of the FIB device according to the present invention.
  • the FIB device is totally controlled by a control unit 31.
  • the ion beam 12 extracted from the ion gun 11 is focused by the converging lens 13 and the objective lens 14, and is focused on the XY stage 22 in the sample chamber 21. Irradiation is performed on the mounted wafer 23 surface.
  • the XY stage 22 is controlled by the stage drive unit 32 under the control of the control unit 31. Driven.
  • the ion beam 12 irradiated on the wafer 23 is deflected by the deflector 15 and scanned on the wafer 23.
  • a stop 16 for cell projection is provided below the converging lens 13.
  • secondary electrons 24 are emitted from the wafer portion irradiated by the ion beam 12.
  • the secondary electrons 24 are detected by a secondary electron detector 25, subjected to signal processing such as amplification and A / D conversion in a signal amplification / processing section 33, and then stored in a memory 34.
  • the image signal stored in the memory 34 is supplied to a display 35 scanning in synchronization with ion beam scanning, and a sample image is displayed on the display 35. This sample image is called a SIM image.
  • a wafer held in the wafer carrier 41 is loaded into or unloaded from the XY stage 22.
  • An observation sample holder opening-donor unloading section 43 for loading / unloading a holder for holding an observation sample, a sample manipulator driving section 44, and a reactive gas introducing section 45 are provided.
  • the sample chamber is also provided with an optical microscope 26.
  • the control unit 31 sets a sample cutting-out position for TEM or STEM observation based on the obtained sample image according to the read sample preparation recipe 37, and monitors the ion beam while monitoring the sample image. Perform processing.
  • the processed sample is cut out from the wafer and used for observation by TEM or STEM.
  • the control section 31 controls each section to control the cutout of the observation sample, and creates an observation recipe 88 described later.
  • the created observation recipe 88 is temporarily stored in the memory 34 and output to the TEM or STEM for sample observation and the database via the LAN. The observation recipe will be described later.
  • FIG. 2 shows a schematic configuration of a TEM or STEM according to the present invention.
  • the device is generally controlled by a control unit 81.
  • the electron beam 62 emitted from the electron gun 61 is accelerated to a predetermined energy, then narrowed down by the converging lens 63, and the sample surface on the sample holder 66 mounted on the XY stage 65 Is irradiated.
  • the XY stage 65 is driven by the stage drive unit 82 under the control of the control unit 81.
  • the transmitted electrons 71 transmitted through the sample are detected by the transmitted electron detector 73 through the objective lens 72, and the signal T / JP01 / 02131 Amplification.
  • Amplification and signal processing such as A / D conversion in the processing unit 83 are stored in the memory 84.
  • the image signal stored in the memory 84 is supplied to a display 85 that is being scanned in synchronization with electron beam scanning, and a sample image is displayed on the display 85.
  • the sample holder 66 holding the sample is loaded or unloaded on the XY stage 65 by the sample holder loading / unloading unit 86 under the control of the control unit 81.
  • a transmitted electron image can be obtained.
  • the irradiation electron beam is scanned by the deflector 64 and a time-change signal of the transmitted electrons 71 is obtained, a scanned transmitted electron image can be obtained.
  • an X-ray detector 75 that detects characteristic X-rays 74 generated from a sample by electron beam irradiation, or an energy spectrometer 76 that performs energy spectroscopy of transmitted electrons 71, etc. Is provided.
  • the observation of the sample is performed in accordance with the observation recipe 88 created by the FIB device and transmitted, for example, via the LAN.
  • FIG. 3 is a diagram showing the concept of in-line inspection in a semiconductor device manufacturing process according to the present invention.
  • An in-line inspection process is provided in the middle of the wafer process and the semiconductor process processes 91 and 92 before and after the illustrated process.
  • the in-line inspection process is roughly divided into two processes: a sample preparation process in a FIB device and a sample inspection process in a TEM / S TEM.
  • sample preparation process of the FIB device In the sample preparation process of the FIB device, according to the pre-registered sample preparation recipe 37, a plurality of specified locations on the wafer were targeted, the sample extraction locations were automatically positioned, and the sample was automatically extracted and extracted.
  • the sample is automatically mounted on the sample holder for observation used in TEMZSTEM, and an observation recipe 88 for observing the sample by TEM / STEM is created.
  • the observation area is automatically aligned for multiple samples mounted on the observation sample holder in accordance with the observation recipe 88 prepared by the FIB device and input to the TE MZS TEM. Then, by acquiring a predetermined sample image, the inspection is performed on a local region of about several hundred nm. Each is described below.
  • FIG. 4 is a flowchart illustrating a process for preparing an observation sample holder for loading a sample cut by the FIB apparatus.
  • a sample holder carrier containing an empty observation sample holder is mounted on the observation sample holder load / unload section 43 of the FIB device.
  • Step 12 the observation sample holder is taken out of the sample holder carrier, and after confirming that it is empty by the detector attached to the mouth-to-door port 43, Step 1 Proceed to 3, and the holder number written on the holder is read by the holder number reader attached to the load / unload section.
  • the observation sample holder is transported and loaded at a predetermined position in the sample chamber 21 of the FIB device in step 14.
  • the holder number of the observation sample holder is a code unique to each observation sample holder, and is used to identify each observation sample holder.
  • the main body of the sample holder for observation can be reused repeatedly.
  • FIG. 5 is a flowchart showing the flow of the sample preparation processing and the observation recipe preparation processing.
  • the wafer carrier 41 containing the wafer to be inspected is mounted on the wafer unloading unit 42.
  • the wafer to be inspected is taken out of the wafer carrier, and in step 23, it is conveyed to the bri-alignment unit and pre-aligned.
  • the pre-alignment is an operation for detecting an orientation flat or a notch of the wafer, and adjusting the mounting direction of the wafer to the direction of the XY stage 22 of the FIB apparatus based on the detected orientation flat or notch.
  • the wafer number formed on the wafer is read by a wafer number reader (not shown) incorporated in the FIB apparatus.
  • the wafer number is a unique code for each wafer, and is used to identify the individual wafer or the name of the wafer or the name of the in-process process.
  • Step 25 Using the read wafer number as a key, a sample preparation recipe 37 corresponding to this wafer registered in advance is read.
  • the sample preparation recipe 37 defines a sample extraction procedure, extraction conditions, and extraction result output conditions from a wafer, and is generally set for each type of product to which the wafer belongs and the name of the in-process process. Subsequent operations are performed automatically or semi-automatically according to this recipe 37.
  • step 26 the wafer is transferred to and loaded on the XY stage 22 in the sample chamber 21.
  • step 27 the wafer 23 loaded on the XY stage 22 is used by using the optical microscope 26 mounted on the upper surface of the sample chamber 21 and the alignment pattern formed on the wafer 23. , Will be aligned.
  • the alignment is an operation for aligning the coordinate system of the wafer 23 with the coordinate system of the Y stage 22.
  • the optical microscope image of the alignment pattern is compared with a previously registered alignment pattern reference image.
  • the stage position coordinates are corrected so that the field of view is exactly overlapped with the field of view of the reference image.
  • step 28 the wafer 23 after the alignment is moved to the stage at a predetermined sample cutout position, and the cutout position is positioned using the SIM image.
  • FIG. 6 is a view for explaining a step of cutting out and retrieving a sample from the wafer 23 using a focused ion beam.
  • a diaphragm 16 for cell projection as shown in FIG. 7 is used in order to achieve both high-speed machining and finishing with high positioning accuracy.
  • the aperture 16 for cell projection includes a C-shaped cell portion 101 having a C-shaped beam transmitting portion 102 and a spot beam portion 105.
  • the central portion 103 is a cut-out sample portion
  • the beam-shaped portion 104 connecting the central portion 103 to a peripheral portion is a sample support portion during processing.
  • the C-shaped cell portion 101 on the left side of the beam stop 16 is irradiated with a focused ion beam to form a C-shaped beam.
  • finish processing is performed as shown in Fig. 6 (b).
  • an observation sample part 106 is formed corresponding to the central part 103 of the C-shaped cell part 101 of the beam stop 16, and corresponding to the beam part 104.
  • a support 107 is formed.
  • a reactive gas for assisting ion etching is introduced from the reactive gas introduction part 45 in order to obtain a high processing speed and a smooth processing section, and the vicinity of the ion beam irradiation point is changed to a reactive gas atmosphere.
  • a fluorine-based gas is introduced into the vicinity of the processing location for processing a silicon oxide film and a chlorine-based gas for processing metal wiring.
  • a section or a plane is selected as the section according to the observation purpose.
  • the sample is fixed to the sample manipulator 108 after cutting the lower portion of the sample piece by tilting the wafer.
  • the sample is fixed to the sample manipulator 108 by, for example, bringing the tip of the manipulator into contact with the top surface of the sample in an atmosphere of a tungsten compound gas and irradiating the contact portion with an ion beam to form the tungsten film 109.
  • the sample is supported by the tungsten film 109 and fixed to the sample manipulator 108 as shown in FIG. 6 (d). After that, as shown in FIG. 6 (e), the support portion 107 is cut by the focused ion beam to cut out the sample 110.
  • the sample was fixed to the manipulator by bringing the tip of the manipulator into contact with the sample surface, controlling the manipulator drive unit 44, applying a voltage to the manipulator, and utilizing the electrostatic action between the sample and the sample.
  • the manipulator may be electrostatically attracted and fixed.
  • FIG. 8 is a schematic diagram showing an example of a sample fixed to the observation sample holder 66.
  • Fig. 8 (a) is a top view of the observation sample holder loaded with the sample
  • Fig. 8 (b) is a cross-sectional view along AA '.
  • the sample holder for observation 66 shown in the figure has a carbon thin film 123 supported on one end of a cylindrical main body 121 by a metal mesh 122, and is provided in each section defined by the metal mesh 122. An address has been assigned.
  • the cut-out samples 13 1 to 13 4 are specified in the sample preparation recipe 37 on the observation sample holder or based on the sample preparation recipe. Is loaded into a pre-registered address position read from the memory. On the other hand, in step 31, the control unit 31 of the FIB apparatus stores information such as the name of the sample, the name of the in-process process, the address number of the die to which the sample belongs, the address position on the observation sample holder, and the inspection contents. Is used to create an observation recipe 88 with the same holder number. Observation recipe 8 8 defines the observation procedure, observation conditions, and observation result output conditions for the sample mounted on the observation sample holder.
  • the TEM / STEM recipe for the holder number of the observation sample holder carried into the sample chamber 21 of the FIB device has already been stored in the memory 34 of the FIB device. If it exists, it is a recipe for a previously observed sample, so delete the receiver and initialize the contents of the observation recipe.
  • step 32 for the wafer on the XY stage, it is determined whether sample cutting and removal at all locations specified in the sample preparation recipe 37 and mounting on the observation sample holder have been completed. Repeat steps 28 to 31 until all samples have been cut out.
  • step 33 the observation sample holder for which the mounting of the sample has been completed and the wafer for which the sample has been cut out are returned to the respective carriers.
  • the observation recipe 88 created in step 31 is input to the TE MZ STEM used for inspection, it is output in step 34 via a communication line or using a storage medium. You. If unprocessed wafers to be inspected remain in the wafer carrier as determined in the next step 35, the processing from step 21 is repeated for those wafers.
  • Figure 9 shows an example of the items described in the observation recipe 88.
  • information such as a product holder number, a lot name, a wafer number, a die address, and the like are described as information relating to the sample holder, and information relating to the wafer from which the sample has been cut out, as information relating to the sample holder.
  • information such as specimen address in the holder, inspection item, inspection procedure, acceleration voltage, beam current, detection signal, and detection result output are described as the inspection information.
  • the sample mounted on the sample address A-1 in the holder has a polysilicon film thickness of 100 kV by STEM and a beam current of 1 nA by the type 3 inspection procedure. Inspection results should be output as a type 2 wafer map It has been instructed.
  • types such as an inspection procedure and an inspection output mean that data whose data is registered in advance is used.
  • the sample holder number was obtained in step 14 in Fig. 4.
  • Information such as the product name, lot name, wafer number, and die address related to the wafer from which the sample was cut was used as the sample preparation recipe. It is the information described in 37.
  • the information such as the sample address in the holder, inspection items, inspection procedure, acceleration voltage, beam current, detection signal, and detection result output are the information described in the sample preparation recipe 37 or the same. Is information registered in advance and read from the memory. In this way, the control unit 31 of the FIB apparatus cuts out the sample from the specified location of the wafer specified according to the sample preparation recipe, loads the sample into the observation sample holder, and specifies the sample on the TEM / STEM side.
  • the information necessary for the observation that is, the information on the sample holder for observation loaded with the sample and the address information on the holder, and the information on the inspection method of the sample inherited from the recipe for sample preparation are combined to create an observation recipe, Output to TEM / STEM and database via LAN.
  • FIGS. 10 and 11 are diagrams illustrating an example of how to cut out a sample in the FIB apparatus.
  • a sample cut from a wafer it is necessary to make a cross section at the center of the pattern in order to perform high-precision measurements on hole patterns and the like. Even if the irradiation position accuracy of the focused ion beam is somewhat poor, as shown in Fig. 10, the observation pattern is oriented in a direction perpendicular to the processing cross section, so that a cross section is formed near the center of either pattern. It is preferable to use a cross-sectional observation sample composed of a plurality of pattern groups that are slightly shifted from each other. FIG.
  • FIG. 10 (a) is a top view of a wafer including a sample cut-out portion 140
  • FIG. 10 (b) is a cross-sectional view.
  • the test pattern 144 with the maximum lateral length appearing in the cross section is judged to be the optimum test pattern in which the cross section is made at almost the center.
  • the incident direction of the electron beam of the TEMZ STEM is parallel to the observation film surface, as shown in FIG. A continuous transmission image is obtained at the stepped portion.
  • the measured value T1 in this case accurately represents the thickness of the film 153. Therefore, by tilting the XY stage of the TEMZS TEM or adjusting the incident direction of the electron beam 62, the film thickness measurement is performed so that a TEM image or STEM image as shown in FIG. 12 (a) is formed. If this is done, it is guaranteed that the incident direction of the electron beam is parallel to the observation film surface, so that accurate film thickness measurement values can be obtained.
  • FIG. 13 is a flowchart showing the flow of processing in TEM or STEM.
  • step 41 the sample holder carrier on which the observation sample holder to be inspected is placed is transported from the FIB device to the TEM STEM by an automatic carrier or by an operator, and is mounted on the mouth-to-door portion 86 of the sample holder carrier.
  • step 42 the holder number written on the observation sample holder is read by the holder number reader attached to the load / unload section 86.
  • step 44 after taking out the observation sample holder to be measured from the holder carrier, the observation sample holder is loaded in a predetermined direction on the XY stage 65 in the sample chamber held in a vacuum.
  • step 45 the observation sample holder 66 loaded on the XY stage 65 is stage-moved to the address where the first sample specified by the observation recipe 88 is located, and the observation point is positioned.
  • the observation pattern should be
  • the test pattern with the cross section formed near the center of the pattern is selected as the observation point.
  • a step as shown in Fig. 11 is formed in the processed cross section of the sample, adjust the incident direction of the electron beam 62 or the tilt of the XY stage 65 to adjust the inclination as shown in Fig. 12 (a).
  • the electron beam and the observation film surface can be made parallel.
  • the angle between the electron beam 62 and the surface of the observation film is obtained, and the obtained angle is used to measure the film thickness. May be corrected.
  • the transmission electron image may be a projection image obtained by a normal transmission electron microscope or a scanning image obtained by a scanning transmission electron microscope. Scanned images are easier to interpret and handle than projected images, as there is no change in diffraction contrast due to slight differences in focal position.
  • the obtained transmission electron image and Z or elemental analysis information are analyzed to determine the thickness of the thin film at a predetermined portion and the shape and dimension of the pattern as shown in the cross-sectional example of the hole pattern in FIG. 14 (a).
  • the analysis of observation data may be performed in real time, or only transmission images or data of each sample may be acquired and stored, and the analysis may be performed offline. Elemental information obtained from elemental analysis and transmitted electron energy analysis not only determines compositional state, but also determines thin film thickness, pattern geometry, hole conduction / non-conduction, crystal grain size, dopant concentration profile, etc. Indispensable to do.
  • the transmission electron image and the element concentration profile are compared with the reference image of the inspection location stored in advance, and defects detected as the differences between the transmission electron image and the element concentration profile are abnormal in the film thickness, shape and dimensions, as well as in the hole filling portion and These include plug pinholes, poor coverage of deposited films, and crystal defects such as stacking faults.
  • the detected defects are classified according to a predetermined automatic defect classification algorithm.
  • the inspection of all the samples on the observation sample holder is performed by repeating the processing from Step 45 to Step 46. If it is determined in step 47 that the inspection of all the samples on the sample holder has been completed, the process proceeds to step 48 to unload the observation sample holder into the sample holder carrier. Then, the process proceeds to step 49, where an inspection result is created and output based on the measurement data obtained in step 46. If it is determined in step 50 that there is an untested observation sample holder in the sample holder carrier, the processing of steps 42 to 49 is repeated for that.
  • the output form of the inspection result in step 49 may be the sample image or the observation data as it is, but in general, a wafer map describing the pass or fail of the inspection as shown in Fig. 15 or an inspection failure rate It is output in the form of the number of inspection failures or defect classification results.
  • the sample image and raw observation data corresponding to the die can be displayed together. Not only charts such as wafer maps and charts but also processed reports can be output.
  • output to a higher-level inspection data management system via a communication line or storage medium Although it is common, it can also be output as printed matter.
  • in-line measurement data data for more advanced process management and transistor characteristic analysis can be obtained.
  • in-line measurement of gate insulating film thickness and dopant concentration profile of source / drain regions at the same time as gate length can provide data for real-time accurate prediction of transistor electrical characteristics such as threshold voltage. .
  • These data are output to a higher-level production management system, and are used to precisely control device performance reliability and yield.
  • the sample holder carrier is sent to the sample storage connected to the TEM or STEM by a transporter, and the inspected sample is stored in the sample storage while being placed on the observation sample holder.
  • These samples are kept in stock using the wafer number, product name, process in process, and holder number as keys, and can be removed at a later date if a yield or reliability problem occurs. Will be reviewed again.
  • the sample storage may be placed between the FIB device and the TEM / STEM as a buffer, as shown in Fig. 16. Good.
  • the calibration of TEM or STEM magnification is performed by observing a crystal lattice image. This results in very accurate dimensional and shape measurement data.
  • the inside of both the wafer carrier and the sample holder carrier is kept in a clean atmosphere.
  • the sample holder carrier used is designed so that the sample is not contaminated.
  • the SIM image was used to position the cutout.
  • a high-resolution optical microscope or scanning electron microscope (SEM) was built in the focused ion beam device, and the optical microscope image or SEM image was used. It is also possible to perform positioning using. Positioning using an optical microscope image or SEM image instead of the SIM image can further reduce damage to the wafer due to the positioning.
  • the observation sample holder is numbered, and the inspection by TEM / STEM is controlled using the holder number.
  • the sample number is stamped on each sample with the focused ion beam, and the sample number is
  • the observation recipe 88 may be created by using, and the inspection work may be controlled.
  • a force is shown in which a plurality of samples cut out from one wafer are placed on one observation sample holder.
  • a plurality of samples cut out from one wafer are used for a plurality of observations.
  • the sample may be placed over the sample holder, or samples cut out from a plurality of wafers may be collectively placed on one observation sample holder.
  • the inspection content it is also possible to perform multiple types of inspections on one sample, or to change the inspection content individually for the samples in the observation sample holder.
  • the specification of the sample cutout location in the FIB apparatus is determined in advance for each product name, in-process process name, but the specification of the sample cutout location in the recipe is determined by the defect position coordinate data of the defect inspection apparatus or the like. It is also possible to overwrite differently for each wafer, such as specifying the position coordinates on the wafer map of the operator. In addition to determining the cutout location for each product name and in-process process name, if defect position coordinate data can be overwritten for each wafer, it can be used for review inspection after defect inspection etc. become.
  • a tungsten support film was used for fixing the sample to the sample manipulator, but the deposition film for fixing is not limited to this.
  • the FIB device and the TEMZ STEM are both configured as a stand-alone device.
  • the FIB device and the TEMZSTEM can be configured as one device including the FIB device and the TEMZS TEM. It is also possible to connect multiple TEMZSTEMs to one FIB device.
  • the cross-section samples processed with steps can be used not only for TEM / STEM but also for various observation devices such as SEM and optical microscope.
  • the manufacture of a semiconductor device is described as an example, but the present invention can be applied to the manufacture of similar devices such as an image sensor and a display device.
  • Industrial applicability ' ⁇ EM or ST EM sample observation, combined with' FIB device sample preparation, '(1) FIB device targets specified multiple locations on wafer according to pre-registered sample preparation recipe Automatically position the sample extraction point, automatically extract the sample, automatically mount the extracted sample on the observation sample holder used in TEM / STEM, and observe the sample using TEM / STEM.
  • (2) TEMZSTEM targets multiple samples mounted on the observation sample holder according to the observation recipe created by the FIB device and input to the TEM / S TEM.
  • in-line measurement of gate insulating film thickness and dopant concentration profile of source / drain regions, as well as gate length enables accurate prediction of transistor electrical characteristics such as threshold voltage in real time.
  • data that can accurately manage the performance reliability and yield of devices, which has never been possible before, can be acquired by in-line inspection.
  • inspected samples can be stored, they can be removed from storage and re-examined in the event of a yield or reliability problem at a later date. This simplifies failure analysis, which is difficult without physical components.
  • the ability to observe the crystal lattice image makes it extremely easy to calibrate the magnification of the device. And accurate measurement data of very accurate dimensions and shapes can be obtained.

Abstract

L'invention concerne un procédé et un dispositif d'inspection en ligne de l'épaisseur d'une pellicule déposée sur une plaquette en cours de fabrication, de la dimension du motif, de la précision de repérage du motif, et de l'état de connexion électrique d'un trou en cours de fabrication d'un élément à semi-conducteurs, d'un capteur d'images, ou d'un appareil d'affichage. Selon l'invention, l'observation de l'échantillon par TEM/STEM est associée à la préparation de l'échantillon par dispositif FIB. Le dispositif FIB sélectionne une pluralité de parties désignées en tant qu'objets sur une plaquette en fonction d'un processus de préparation d'échantillon (37) enregistré préalablement, positionne automatiquement une partie de coupe d'échantillon, coupe automatiquement un échantillon et le monte automatiquement sur un support d'échantillon pour l'observation par TEM/STEM, et détermine un processus (88) d'observation de l'échantillon par TEM/STEM. Au cours du processus TEM ou STEM, on aligne automatiquement la zone d'observation d'une pluralité d'échantillons montés sur un support d'échantillon en fonction du processus d'observation déterminé par le dispositif FIB et mis en oeuvre dans la TEM ou STEM, et on acquiert des données d'observation par capture d'images d'échantillons prédéterminés.
PCT/JP2001/002131 2001-03-16 2001-03-16 Procede d'inspection d'une plaquette, dispositif a faisceau ionique focalise et dispositif a faisceau electronique de transmission WO2002075806A1 (fr)

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PCT/JP2001/002131 WO2002075806A1 (fr) 2001-03-16 2001-03-16 Procede d'inspection d'une plaquette, dispositif a faisceau ionique focalise et dispositif a faisceau electronique de transmission
JP2002574123A JPWO2002075806A1 (ja) 2001-03-16 2001-03-16 ウエハの検査方法、集束イオンビーム装置及び透過電子ビーム装置

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JP2004179165A (ja) * 2002-11-26 2004-06-24 Fei Co ターゲット修復用のイオンビーム
JP2004228076A (ja) * 2003-01-17 2004-08-12 Fei Co サンプルの製造及び透過性照射方法並びに粒子光学システム
JP2005038853A (ja) * 2003-07-14 2005-02-10 Fei Co 二重ビーム装置
JP2006313852A (ja) * 2005-05-09 2006-11-16 Nec Electronics Corp 半導体装置及び評価パターンの評価方法
US7166141B2 (en) 2003-04-05 2007-01-23 Euan Skinner Macleod Vacuum cleaner
WO2008010777A1 (fr) * 2006-07-21 2008-01-24 National University Of Singapore Microscope multifaisceau à spectres d'ions/électrons
JP2009059516A (ja) * 2007-08-30 2009-03-19 Hitachi High-Technologies Corp イオンビーム加工装置及び試料加工方法
JP2009110745A (ja) * 2007-10-29 2009-05-21 Sii Nanotechnology Inc 試料作成装置および試料姿勢転換方法
EP2106555A2 (fr) * 2006-10-20 2009-10-07 FEI Company Procédé d'analyse d'échantillons au microscope électronique à transmission et/ou à balayage
US7812347B2 (en) 2002-12-10 2010-10-12 International Business Machines Corporation Integrated circuit and methods of measurement and preparation of measurement structure
JP2010232185A (ja) * 2010-06-03 2010-10-14 Hitachi High-Technologies Corp 試料加工装置
US8183547B2 (en) 2009-05-28 2012-05-22 Fei Company Dual beam system
US8357913B2 (en) 2006-10-20 2013-01-22 Fei Company Method and apparatus for sample extraction and handling
JP2015185327A (ja) * 2014-03-24 2015-10-22 株式会社日立ハイテクサイエンス 集束イオンビーム装置
KR20160031410A (ko) * 2014-09-12 2016-03-22 가부시기가이샤 디스코 레이저 가공 장치
US10373881B2 (en) 2016-12-21 2019-08-06 Fei Company Defect analysis
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WO2021171492A1 (fr) * 2020-02-27 2021-09-02 株式会社日立ハイテク Système d'analyse de semi-conducteur
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US7812347B2 (en) 2002-12-10 2010-10-12 International Business Machines Corporation Integrated circuit and methods of measurement and preparation of measurement structure
JP2004228076A (ja) * 2003-01-17 2004-08-12 Fei Co サンプルの製造及び透過性照射方法並びに粒子光学システム
US7166141B2 (en) 2003-04-05 2007-01-23 Euan Skinner Macleod Vacuum cleaner
JP2005038853A (ja) * 2003-07-14 2005-02-10 Fei Co 二重ビーム装置
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US8013311B2 (en) 2003-07-14 2011-09-06 Fei Company Dual beam system
JP2006313852A (ja) * 2005-05-09 2006-11-16 Nec Electronics Corp 半導体装置及び評価パターンの評価方法
US7947951B2 (en) 2006-07-21 2011-05-24 National University Of Singapore Multi-beam ion/electron spectra-microscope
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US8525137B2 (en) 2006-10-20 2013-09-03 Fei Company Method for creating S/TEM sample and sample structure
US8890064B2 (en) * 2006-10-20 2014-11-18 Fei Company Method for S/TEM sample analysis
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US8455821B2 (en) 2006-10-20 2013-06-04 Fei Company Method for S/TEM sample analysis
US9336985B2 (en) 2006-10-20 2016-05-10 Fei Company Method for creating S/TEM sample and sample structure
US8536525B2 (en) 2006-10-20 2013-09-17 Fei Company Method for creating S/TEM sample and sample structure
US9581526B2 (en) 2006-10-20 2017-02-28 Fei Company Method for S/TEM sample analysis
US8993962B2 (en) 2006-10-20 2015-03-31 Fei Company Method and apparatus for sample extraction and handling
US9006651B2 (en) 2006-10-20 2015-04-14 Fei Company Method for creating S/TEM sample and sample structure
JP2009059516A (ja) * 2007-08-30 2009-03-19 Hitachi High-Technologies Corp イオンビーム加工装置及び試料加工方法
JP2009110745A (ja) * 2007-10-29 2009-05-21 Sii Nanotechnology Inc 試料作成装置および試料姿勢転換方法
US8183547B2 (en) 2009-05-28 2012-05-22 Fei Company Dual beam system
JP2010232185A (ja) * 2010-06-03 2010-10-14 Hitachi High-Technologies Corp 試料加工装置
JP2015185327A (ja) * 2014-03-24 2015-10-22 株式会社日立ハイテクサイエンス 集束イオンビーム装置
KR20160031410A (ko) * 2014-09-12 2016-03-22 가부시기가이샤 디스코 레이저 가공 장치
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