CN104685348B - 高纵横比结构分析 - Google Patents

高纵横比结构分析 Download PDF

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Publication number
CN104685348B
CN104685348B CN201380052272.XA CN201380052272A CN104685348B CN 104685348 B CN104685348 B CN 104685348B CN 201380052272 A CN201380052272 A CN 201380052272A CN 104685348 B CN104685348 B CN 104685348B
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interest
region
protective layer
milling
cross
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CN104685348A (zh
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S.H.李
S.斯通
J.布莱克伍德
M.施米德特
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FEI Co
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FEI Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Electromagnetism (AREA)
CN201380052272.XA 2012-10-05 2013-10-04 高纵横比结构分析 Active CN104685348B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261710580P 2012-10-05 2012-10-05
US61/710580 2012-10-05
PCT/US2013/063479 WO2014055876A1 (en) 2012-10-05 2013-10-04 High aspect ratio structure analysis

Publications (2)

Publication Number Publication Date
CN104685348A CN104685348A (zh) 2015-06-03
CN104685348B true CN104685348B (zh) 2017-12-12

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CN201380052272.XA Active CN104685348B (zh) 2012-10-05 2013-10-04 高纵横比结构分析

Country Status (7)

Country Link
US (1) US9741536B2 (enExample)
EP (1) EP2904382B1 (enExample)
JP (1) JP6199978B2 (enExample)
KR (1) KR102155834B1 (enExample)
CN (1) CN104685348B (enExample)
TW (1) TWI628702B (enExample)
WO (1) WO2014055876A1 (enExample)

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CN104813459B (zh) 2012-10-05 2018-01-19 Fei 公司 多维结构访问
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US9741536B2 (en) 2012-10-05 2017-08-22 Fei Company High aspect ratio structure analysis
TWI612551B (zh) 2012-10-05 2018-01-21 Fei公司 在帶電粒子束樣品的製備減少屏幕效應之方法及系統
TWI616923B (zh) 2012-12-31 2018-03-01 Fei公司 使用帶電粒子束引發沈積填充一孔之方法、填充一高縱橫比孔之方法、帶電粒子束系統
CZ304824B6 (cs) * 2013-07-11 2014-11-19 Tescan Orsay Holding, A.S. Způsob opracovávání vzorku v zařízení se dvěma nebo více částicovými svazky a zařízení k jeho provádění
US9564291B1 (en) * 2014-01-27 2017-02-07 Mochii, Inc. Hybrid charged-particle beam and light beam microscopy
KR102537699B1 (ko) 2017-12-26 2023-05-26 삼성전자주식회사 반도체 장치의 검사 방법
US11177110B2 (en) * 2018-02-06 2021-11-16 Howard Hughes Medical Institute Volume scanning electron microscopy of serial thick tissue sections with gas cluster milling
US10811219B2 (en) * 2018-08-07 2020-10-20 Applied Materials Israel Ltd. Method for evaluating a region of an object
WO2021083581A1 (en) * 2019-10-31 2021-05-06 Carl Zeiss Smt Gmbh Fib-sem 3d tomography for measuring shape deviations of high aspect ratio structures
US10903044B1 (en) * 2020-02-12 2021-01-26 Applied Materials Israel Ltd. Filling empty structures with deposition under high-energy SEM for uniform DE layering
KR102871146B1 (ko) 2020-04-28 2025-10-15 삼성전자주식회사 하전입자를 이용한 반도체 소자 검사장치 및 이를 이용한 반도체 소자의 검사방법
TWI826123B (zh) * 2021-12-21 2023-12-11 德商卡爾蔡司Ｓｍｔ有限公司 以更高的精度對半導體晶圓進行３ｄ體積檢測的方法和檢測系統
US12437965B1 (en) * 2022-08-01 2025-10-07 Mochil, Inc. Charged-particle beam microscope with differential vacuum pressures

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CN1979791A (zh) * 2005-12-08 2007-06-13 中芯国际集成电路制造(上海)有限公司 一种测定深沟槽失效深度的方法
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CN1979791A (zh) * 2005-12-08 2007-06-13 中芯国际集成电路制造(上海)有限公司 一种测定深沟槽失效深度的方法
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Also Published As

Publication number Publication date
EP2904382A4 (en) 2015-08-19
EP2904382A1 (en) 2015-08-12
JP6199978B2 (ja) 2017-09-20
US9741536B2 (en) 2017-08-22
WO2014055876A1 (en) 2014-04-10
TW201421546A (zh) 2014-06-01
KR102155834B1 (ko) 2020-09-14
TWI628702B (zh) 2018-07-01
WO2014055876A4 (en) 2014-05-30
KR20150060748A (ko) 2015-06-03
CN104685348A (zh) 2015-06-03
JP2015533215A (ja) 2015-11-19
US20150243478A1 (en) 2015-08-27
EP2904382B1 (en) 2016-08-24

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