KR102155834B1 - 높은 종횡비 구조 분석 - Google Patents

높은 종횡비 구조 분석 Download PDF

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KR102155834B1
KR102155834B1 KR1020157008578A KR20157008578A KR102155834B1 KR 102155834 B1 KR102155834 B1 KR 102155834B1 KR 1020157008578 A KR1020157008578 A KR 1020157008578A KR 20157008578 A KR20157008578 A KR 20157008578A KR 102155834 B1 KR102155834 B1 KR 102155834B1
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protective layer
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KR20150060748A (ko
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이상훈
스테이시 스톤
제프리 블랙우드
마이클 슈미트
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에프이아이 컴파니
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00—Electron-beam welding or cutting
    • B23K15/08—Removing material, e.g. by cutting, by hole drilling
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Electromagnetism (AREA)
KR1020157008578A 2012-10-05 2013-10-04 높은 종횡비 구조 분석 Active KR102155834B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261710580P 2012-10-05 2012-10-05
US61/710,580 2012-10-05
PCT/US2013/063479 WO2014055876A1 (en) 2012-10-05 2013-10-04 High aspect ratio structure analysis

Publications (2)

Publication Number Publication Date
KR20150060748A KR20150060748A (ko) 2015-06-03
KR102155834B1 true KR102155834B1 (ko) 2020-09-14

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Country Status (7)

Country Link
US (1) US9741536B2 (enExample)
EP (1) EP2904382B1 (enExample)
JP (1) JP6199978B2 (enExample)
KR (1) KR102155834B1 (enExample)
CN (1) CN104685348B (enExample)
TW (1) TWI628702B (enExample)
WO (1) WO2014055876A1 (enExample)

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KR102155834B1 (ko) 2012-10-05 2020-09-14 에프이아이 컴파니 높은 종횡비 구조 분석
WO2014106202A1 (en) 2012-12-31 2014-07-03 Fei Company Depositing material into high aspect ratio structures
CZ304824B6 (cs) 2013-07-11 2014-11-19 Tescan Orsay Holding, A.S. Způsob opracovávání vzorku v zařízení se dvěma nebo více částicovými svazky a zařízení k jeho provádění
US9564291B1 (en) * 2014-01-27 2017-02-07 Mochii, Inc. Hybrid charged-particle beam and light beam microscopy
KR102537699B1 (ko) 2017-12-26 2023-05-26 삼성전자주식회사 반도체 장치의 검사 방법
WO2019157068A1 (en) * 2018-02-06 2019-08-15 Howard Hughes Medical Institute Volume scanning electron microscopy of serial thick tissue sections with gas cluster milling
US10811219B2 (en) * 2018-08-07 2020-10-20 Applied Materials Israel Ltd. Method for evaluating a region of an object
CN114599934B (zh) * 2019-10-31 2024-10-11 卡尔蔡司Smt有限责任公司 用于测量har结构的形状偏差的fib-sem 3d断层成像术
US10903044B1 (en) 2020-02-12 2021-01-26 Applied Materials Israel Ltd. Filling empty structures with deposition under high-energy SEM for uniform DE layering
KR102871146B1 (ko) 2020-04-28 2025-10-15 삼성전자주식회사 하전입자를 이용한 반도체 소자 검사장치 및 이를 이용한 반도체 소자의 검사방법
TWI826123B (zh) * 2021-12-21 2023-12-11 德商卡爾蔡司Ｓｍｔ有限公司 以更高的精度對半導體晶圓進行３ｄ體積檢測的方法和檢測系統
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EP2903773B1 (en) 2012-10-05 2016-08-31 Fei Company Bulk deposition for tilted mill protection
WO2014106202A1 (en) 2012-12-31 2014-07-03 Fei Company Depositing material into high aspect ratio structures

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Also Published As

Publication number Publication date
TWI628702B (zh) 2018-07-01
CN104685348B (zh) 2017-12-12
WO2014055876A4 (en) 2014-05-30
JP6199978B2 (ja) 2017-09-20
JP2015533215A (ja) 2015-11-19
KR20150060748A (ko) 2015-06-03
EP2904382A4 (en) 2015-08-19
EP2904382B1 (en) 2016-08-24
TW201421546A (zh) 2014-06-01
US20150243478A1 (en) 2015-08-27
CN104685348A (zh) 2015-06-03
EP2904382A1 (en) 2015-08-12
US9741536B2 (en) 2017-08-22
WO2014055876A1 (en) 2014-04-10

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