JP5101845B2 - 集束イオンビーム装置ならびにそれを用いた試料断面作製方法および薄片試料作製方法 - Google Patents
集束イオンビーム装置ならびにそれを用いた試料断面作製方法および薄片試料作製方法 Download PDFInfo
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- JP5101845B2 JP5101845B2 JP2006224191A JP2006224191A JP5101845B2 JP 5101845 B2 JP5101845 B2 JP 5101845B2 JP 2006224191 A JP2006224191 A JP 2006224191A JP 2006224191 A JP2006224191 A JP 2006224191A JP 5101845 B2 JP5101845 B2 JP 5101845B2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3005—Observing the objects or the point of impact on the object
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/10—Different kinds of radiation or particles
- G01N2223/104—Different kinds of radiation or particles ions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/30—Accessories, mechanical or electrical features
- G01N2223/32—Accessories, mechanical or electrical features adjustments of elements during operation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30466—Detecting endpoint of process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30472—Controlling the beam
- H01J2237/30483—Scanning
- H01J2237/30488—Raster scan
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31749—Focused ion beam
Description
2 二次電子
3 二次電子検出器
4 表面保護膜
5 配線
6 層間膜
7 コンタクトホール
8a 加工領域
8b 加工領域
8c 加工領域
8d 加工領域
9 加工溝
9a 加工溝
9b 加工溝
9c 加工溝
10 試料
11 イオン源
12 イオン光学系
13 試料ステージ
14 ステージ駆動機構
15 制御機構
16 加工終点検出機構
17 表示装置
21 開口
22 試料
IB イオンビーム
EB 電子ビーム
D 断面部分
Claims (5)
- 集束イオンビーム装置を用いて、一定の間隔で配列された複数のコンタクトホールを有する試料の断面を作製する試料断面作製方法において、
前記コンタクトホールの一つの配列方向に平行な方向を集束イオンビームの主走査方向とし、前記主走査方向と垂直な方向を副走査方向とする加工領域を前記試料の表面に設定する工程と、
前記加工領域に前記集束イオンビームを走査照射し、エッチング加工すると共に、前記集束イオンビームを照射することにより発生する二次荷電粒子を検出する工程と、
前記集束イオンビームを前記主走査方向に走査照射し、発生した前記二次荷電粒子の信号量のピーク間隔が前記一つの配列方向の前記コンタクトホールの間隔と一致した場合、前記集束イオンビームによるエッチング加工を終了する工程と、からなる集束イオンビーム装置を用いた試料断面作製方法。 - 前記エッチング加工を終了するまで、前記加工領域を前記副走査方向に拡大し、エッチング加工を施す請求項1に記載の集束イオンビーム装置を用いた試料断面作製方法。
- 前記信号量は、前記集束イオンビームを走査照射し、発生した前記二次荷電粒子の信号量を前記副走査方向について積算した信号量である請求項1または2に記載の集束イオンビーム装置を用いた試料断面作製方法。
- 請求項1から3のいずれか1項に記載の集束イオンビーム装置を用いた試料断面作製方法を用いて、前記断面を作製する工程と、
所望の薄片試料領域を挟んで前記断面の反対側に新たな断面を作製し、薄片試料を作製する集束イオンビーム装置を用いた薄片試料作製方法。 - イオンを発生するためのイオン発生源と、
前記イオンを絞り集束イオンビームを形成し、当該集束イオンビームを試料に走査照射し、エッチング加工するためのイオン光学系と、
一定の間隔で配列された複数のコンタクトホールを有する試料を支持するための試料台と、
前記試料台を移動するための試料台制御機構と、
前記集束イオンビームの照射により発生する二次荷電粒子を検出する二次荷電粒子検出器と、
前記集束イオンビームを前記コンタクトホールの一つの配列方向に対し平行な方向に走査照射し、発生した前記二次荷電粒子の信号量のピーク間隔が前記一つの配列方向の前記コンタクトホールの間隔と一致した場合を加工終点とし、前記加工終点を検出する加工終点検出機構と、を有する集束イオンビーム装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006224191A JP5101845B2 (ja) | 2006-08-21 | 2006-08-21 | 集束イオンビーム装置ならびにそれを用いた試料断面作製方法および薄片試料作製方法 |
TW096129716A TWI409847B (zh) | 2006-08-21 | 2007-08-10 | 聚焦離子束設備及試料剖面形成及薄片試料製備方法 |
KR1020070081113A KR101463245B1 (ko) | 2006-08-21 | 2007-08-13 | 집중 이온빔 장치 및 그것을 이용한 시료 단면 제작 방법및 박편 시료 제작 방법 |
US11/840,575 US7531796B2 (en) | 2006-08-21 | 2007-08-17 | Focused ion beam apparatus and sample section forming and thin-piece sample preparing methods |
CN2007101417233A CN101131909B (zh) | 2006-08-21 | 2007-08-21 | 聚焦离子束装置、样品断面形成及薄片样品制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2006224191A JP5101845B2 (ja) | 2006-08-21 | 2006-08-21 | 集束イオンビーム装置ならびにそれを用いた試料断面作製方法および薄片試料作製方法 |
Publications (2)
Publication Number | Publication Date |
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JP2008047489A JP2008047489A (ja) | 2008-02-28 |
JP5101845B2 true JP5101845B2 (ja) | 2012-12-19 |
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JP2006224191A Expired - Fee Related JP5101845B2 (ja) | 2006-08-21 | 2006-08-21 | 集束イオンビーム装置ならびにそれを用いた試料断面作製方法および薄片試料作製方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7531796B2 (ja) |
JP (1) | JP5101845B2 (ja) |
KR (1) | KR101463245B1 (ja) |
CN (1) | CN101131909B (ja) |
TW (1) | TWI409847B (ja) |
Families Citing this family (22)
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JP5133737B2 (ja) * | 2008-02-28 | 2013-01-30 | エスアイアイ・ナノテクノロジー株式会社 | 断面加工方法および装置 |
JP2010025848A (ja) * | 2008-07-23 | 2010-02-04 | Sumitomo Electric Ind Ltd | 断面観察方法 |
EP2233907A1 (en) * | 2009-03-27 | 2010-09-29 | FEI Company | Forming an image while milling a work piece |
JP2011054497A (ja) * | 2009-09-03 | 2011-03-17 | Sii Nanotechnology Inc | 断面加工観察方法および装置 |
US8350237B2 (en) * | 2010-03-31 | 2013-01-08 | Fei Company | Automated slice milling for viewing a feature |
DE102010032894B4 (de) * | 2010-07-30 | 2013-08-22 | Carl Zeiss Microscopy Gmbh | Tem-Lamelle, Verfahren zu ihrer Herstellung und Vorrichtung zum Ausführen des Verfahrens |
US8686379B1 (en) * | 2010-09-07 | 2014-04-01 | Joseph C. Robinson | Method and apparatus for preparing serial planar cross sections |
CN102487026B (zh) * | 2010-12-02 | 2014-12-03 | 中芯国际集成电路制造(北京)有限公司 | 检测通孔缺陷的方法 |
CN102486441B (zh) * | 2010-12-03 | 2013-08-14 | 中芯国际集成电路制造(上海)有限公司 | Tem样品的再加工方法 |
NL2009053C2 (en) | 2012-06-22 | 2013-12-24 | Univ Delft Tech | Apparatus and method for inspecting a surface of a sample. |
JP6199978B2 (ja) * | 2012-10-05 | 2017-09-20 | エフ・イ−・アイ・カンパニー | 高アスペクト比構造体の分析 |
CN102915900B (zh) * | 2012-11-12 | 2015-09-02 | 上海华力微电子有限公司 | 聚焦离子束装置 |
NL2012780B1 (en) * | 2014-05-08 | 2016-02-23 | Univ Delft Tech | Apparatus and method for inspecting a sample using a plurality of charged particle beams. |
US10903042B2 (en) | 2014-05-08 | 2021-01-26 | Technische Universiteit Delft | Apparatus and method for inspecting a sample using a plurality of charged particle beams |
JP6476020B2 (ja) * | 2015-03-10 | 2019-02-27 | 株式会社日立ハイテクサイエンス | 誘導結合プラズマ発生装置及び誘導結合プラズマ分析装置 |
US9761455B2 (en) | 2015-12-15 | 2017-09-12 | International Business Machines Corporation | Material removal process for self-aligned contacts |
CN106018022B (zh) * | 2016-05-17 | 2018-09-18 | 上海华力微电子有限公司 | 一种平面tem样品的制备方法 |
JP6760870B2 (ja) | 2017-03-10 | 2020-09-23 | 株式会社日立製作所 | 集束イオンビーム装置の制御方法および制御プログラム |
CN112204374B (zh) * | 2018-05-25 | 2023-12-26 | 三菱电机株式会社 | 透射型电子显微镜样品的制作方法 |
DE102018120630B3 (de) * | 2018-08-23 | 2019-10-31 | Carl Zeiss Microscopy Gmbh | Verfahren zum Bearbeiten eines Objekts und Programm zur Steuerung eines Partikelstrahlsystems |
TWI755883B (zh) * | 2020-10-06 | 2022-02-21 | 力晶積成電子製造股份有限公司 | 試片製備方法及試片製備系統 |
CN114236364B (zh) * | 2022-02-24 | 2022-05-31 | 上海聚跃检测技术有限公司 | 一种集成电路芯片的失效分析方法及系统 |
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2006
- 2006-08-21 JP JP2006224191A patent/JP5101845B2/ja not_active Expired - Fee Related
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2007
- 2007-08-10 TW TW096129716A patent/TWI409847B/zh not_active IP Right Cessation
- 2007-08-13 KR KR1020070081113A patent/KR101463245B1/ko active IP Right Grant
- 2007-08-17 US US11/840,575 patent/US7531796B2/en active Active
- 2007-08-21 CN CN2007101417233A patent/CN101131909B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7531796B2 (en) | 2009-05-12 |
KR101463245B1 (ko) | 2014-11-18 |
US20080042059A1 (en) | 2008-02-21 |
KR20080017253A (ko) | 2008-02-26 |
TWI409847B (zh) | 2013-09-21 |
CN101131909A (zh) | 2008-02-27 |
CN101131909B (zh) | 2011-06-08 |
TW200826144A (en) | 2008-06-16 |
JP2008047489A (ja) | 2008-02-28 |
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