^4 325 7 5 at B7 五、發明説明（） 5-1發明領域： 本發明係有關於一種聚焦離子束黠針測量方法，特别 是在量測信號時，能使點針有效地量測半導體底材矽上的 導電金屬的電壓與電流特性。 5-2發明背景： 經濟部中央標準局貝工消費合作杜印製 ---------裝— (請先閱讀背面之注意事項再填寫本頁) 傳統的金屬電性量測，麥見第1圈所示，採用策焦離 子束（Focus丨on Beam ; FIB)黠針測量方法，係在半導體 底材砂上之介電層（Dielectric Layer>102 以鍺 (Germanium ; Ge)離子化之聚焦離子束（fib)掃描撞擊介 電層’以挖一連接润（Contact Hoi e)1G4到欲測量的金屬 導電層（MetalConductorLayer)IOl，接著通入金屬化合 物氣體（例如：WF*或PtFe)，利用鍺（〇e)離子化之聚焦離 子束掃描介電層102,並同時撞擊金屬化合物氣體，以將 金屬化合物氣體之鍵結撞斷，分離出金屬原子（例如：鎢 (W)或始（Pt))，以填入連接间1〇4内，接著褚離子化之策 焦離子束以四方形圈形褅描介電層1〇2,並同時撞擊金屬 化合物氣體，將鍵離出的金屬原子’在半導體底材矽上之 1C表面103沈積成用以抵住點針之四方形金屬探針塾廣 (Metal Probing Pad)105 。由於傳统的金屬電性量測方 法，係由鍺離子化之聚焦離子束掃插撞擊金屬化合物氣 2 本紙張尺度適用中國國家樣準（CNS ) A4規格（210 X 297公瘦） 經濟部中央標準局員工消費合作社印製 ''d 325 7 5 A7 B7____ 五、發明説明（） 體，產生金屬原子以沈積成四方形狀之金屬探針垫層 105，因此當量測信號時，點針106在四方形的金屬探針 墊層1〇3上容易滑掉，而導致金屬電性量測不佳。 5·3發明目的及概述： 本發明的主要目的在提供一種聚焦離子束點針測量 方法，係將位於半導體底材矽丨C表面上之金屬探針墊層 沈積成多數種具内凹曲線之圖索，例如L字形、十字形、 面團形 '部份圓明形、V字形'Π字形等等，以讓點針容 易抵住，方便金屬電性量測與準確性。 此外，本發明之金屬電性量測方法，亦可將欲測量的 金屬導電層（Metal Conductor Layer)上的介電層，利用 聚焦維子束全挖開或半挖開介電層之方法，爆露出部份金 屬導電層，以讓點針直接抵住曝露出的部份金屬導電層， 使得金屬電性量测更爲簡易。 5·4圏式簡單説明： 第1圖爲依據傳統方法，形成四方形金展 句孩針墊層以測量 3 ^紙張尺度逋用國家標率(CNS ) Α4規^ ( 210X297公釐） ---=*--、----裝------訂------¼ (請先閏讀背面之注意事項再填寫本頁) 32 5 7 5 A7 _____B7 五、發明説明（） 金屬導電層電性之三維透視結構囷。^ 4 325 7 5 at B7 V. Description of the invention (5) Field of the invention: The present invention relates to a method for measuring a focused ion beam pin, especially when measuring a signal, which enables the point pin to effectively measure semiconductors. Voltage and current characteristics of conductive metals on substrate silicon. 5-2 Background of the Invention: Printed by Shellfisher Consumer Cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs --------- installation— (Please read the precautions on the back before filling this page) Traditional metal electrical measurement, As shown in the first circle of Mai, the method of Focusing on Beam (FIB) pin measurement is adopted, and the dielectric layer (Dielectric Layer) on the semiconductor substrate sand (102) is ionized with germanium (Ge). The focused ion beam (fib) scans the impact dielectric layer to dig a contact layer 1G4 to the metal conductive layer (MetalConductorLayer) 101 to be measured, and then passes in a metal compound gas (for example: WF * or PtFe) The germanium (〇e) ionized focused ion beam is used to scan the dielectric layer 102 and impinge on the metal compound gas at the same time to break the bond of the metal compound gas to separate metal atoms (such as tungsten (W) or (Pt)), to fill the connection room 104, followed by the ionization strategy, the coke ion beam traces the dielectric layer 102 in a square circle, and simultaneously impinges on the metal compound gas to remove the bond Metal atoms' are deposited on the 1C surface 103 on the semiconductor substrate silicon to form Metal Probing Pad 105, a square metal probe that holds the needle. Due to the traditional electrical measurement method of metal, the focused ion beam swept by the germanium ion strikes the metal compound gas. 2 This paper is applicable to China. Sample (CNS) A4 size (210 X 297 male thin) Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs `` d 325 7 5 A7 B7____ 5. Description of the invention (), generating metal atoms to deposit into a square-shaped metal The probe pad layer 105, so when measuring a signal, the point needle 106 easily slips off on the square metal probe pad layer 103, resulting in poor electrical measurement of the metal. 5.3 Purpose and Summary of the Invention The main object of the present invention is to provide a focused ion beam point needle measurement method, which deposits a metal probe pad layer on the surface of a semiconductor substrate silicon 丨 C into most kinds of graphs with concave curves, such as L-shaped, The cross shape, dough-shaped 'partial round-shaped shape, V-shaped', Π-shaped, etc., make the point needle easy to bear, and facilitate the electrical measurement and accuracy of metal. In addition, the electrical measurement method of the invention, You can also measure It belongs to the dielectric layer on the Metal Conductor Layer. Using a focused dimensional beam to fully or semi-dig the dielectric layer, the metal conductive layer is partially exposed, so that the point needle directly touches the exposed part. The metal conductive layer makes the measurement of the electrical property of metal more simple. 5. · 4 说明 Brief description: Figure 1 is a traditional method to form a square gold pinned pin cushion layer to measure 3 ^ paper size. Standard rate (CNS) Α4 gauge ^ (210X297 mm) --- = *-、 ---- install -------- order ------ ¼ (Please read the precautions on the back before (Fill in this page) 32 5 7 5 A7 _____B7 V. Description of the invention () Three-dimensional perspective structure of the electrical conductivity of the metal conductive layer 囷.
第2圈爲依據本發明之第一較佳實施例方法，形成十字形 金屬探針墊層之三維透視結構圈D 第3A圖爲依據本發明之第一較佳實施例方法，形成十字 形金屬探針垫層圈案之示意圈。 第3B圖爲依據本發明之第一較佳實施例方法，形成l字 形金屬探針墊層圏案之示意圏。 第3C圈爲依據本發明之第一較佳實施例方法，形成圓圏 形金屬探針墊層圖案之示意圖。 第3D興爲依據本發明之第一較佳實施例方法，形成部价 围圏形金屬探針墊層圖案之示意固。 第3E圏爲依據本發明之第一較佳實施例方法，形成v字 形金屬探針垫層圏案之示意圖。 第3F1爲依據本發明之第一較佳實施例方法，形成门字 形金屬探針墊層圉案之示意圖。 第4圖爲依據本發明之第二較佳實施例方法，形成半開介 電層以測量金屬導電層電性之三維透視結構爾。 第5圈爲依據本發明之第三較佳實施例方珐，形成全開介 電層以測量金屬導電層電性之三維透視結構圖。 ---------裳------.玎------k (請先聞讀背面之注意事項再填寫本頁〕 經濟部中央標準局舅工消費合作杜印製 明 説 細 詳 明 發 鎌 準 I標 I家 I國 國 |中 一用 I边 規 公 7 9 2 ,經濟部中央標孪局負工消費合作社印裝 P4 32 5 7 5 A7 _B7______五、發明説明（） 參見第2圖所示’爲依據本發明之第一較佳實施例’ 形成十字形金屬探針墊層之剖面結構圖。在一半導體底材 矽上，具有金屬導電層201與介電層202 。金展導電層 201係以習知的沈積方法（例如化學氣相沈積法（CVD)或 物理氣相沈積法（PVD))沈積，其中金屬導電層201可爲 化學氣相沈積法所沈積的多晶矽層（p〇|ysihcon)'梦化鎢 層（Tung stenSilicide)或金屬鎢層（Tungsten) ’亦可爲物 理氣相沈積法（濺鍍法Sputtering)所沈積的铭矽銅合 金、鈦鎢合金或金屬鈦。介電層2〇2係以習知的沈積方'法 沈積於金屬導電層201上，例如以化學氣相沈積珐（CVD) 所沈積形成的二氧化矽層 '氮化發層1嶙硬玻璃層（pSG) 或碉磷矽玻璃層（BPSG)。以上皆爲習知的技術製作’在 此非本發明之重點因此不加以詳述。 此時，當要連行金屬導電層201的電性測量時，係先 在介電層（Dielectricl_ayer)202上，以鍺（Ge)離子化之聚 焦離子束（FiB)掃描撞擊介電層202，其能量約30 KeV， 時間約爲2到10分鐘，以挖一連接洞（Contact Hole)204 到欲測量的金屬導電層（Meta丨Conductor Layer)201，接 著通入金屬化合物氣體（例如：\/\^4或？1匕），利用鍺（Ge) 離子化之聚焦離子束，以能量约30 KeV，時間约5到20 分鐘，掃描介電層202，並同時撞擊金屬化合物氣體，以 將金屬化合物氣體之鍵結撞斷，分線出金屬化合物氣體之 金屬原子（例如：鎢（W)或鉑（Pt>)，並利用產生之金屬原 ------L----裝------訂------镍 - (請先閱讀背面之注意事碩再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ^432575 A7 B7 五、發明説明（）填人連接洞⑽内，《形成〜金屬看咖， ，錄離子化之聚焦離子束掃插圖形，以具内凹曲線： 能量约3〇KeV，時間约5到1〇分鐘， 2〇2,並同時撞擊金屬化合物氣禮，並利用產生之金屬】 子’在半導體底材梦上之丨c表面2〇3上沈積成具内凹曲 線圈案用以抵住點針之金屬探針塾層_3丨Pr〇binc Pad)2〇6D||由鍺離子化之Μ離子束择描s料決定出 金屬探針替廣206之圖案，因此爽焦離子東择描十字形圖 形即可形成十字形圖案之金屬探針整層205，以方便點針 207抵住金屬探針垫層206，增加金屬電性量測的方便性 與準確度。 經濟部中央標準局員工消費合作社印裝The second circle is a method for forming a three-dimensional perspective structure circle D of a cross-shaped metal probe pad according to the method of the first preferred embodiment of the present invention. FIG. 3A is a method for forming a cross-shaped metal according to the method of the first preferred embodiment of the present invention. Schematic circle of the probe pad circle case. FIG. 3B is a schematic diagram of a method of forming an I-shaped metal probe pad layer according to the method of the first preferred embodiment of the present invention. Circle 3C is a schematic diagram of forming a circular cymbal-shaped metal probe pad pattern according to the method of the first preferred embodiment of the present invention. The 3D model is a schematic illustration of a method for forming a pattern of a metal probe pad layer with a perimeter shape in accordance with the method of the first preferred embodiment of the present invention. Figure 3E is a schematic diagram of a method of forming a V-shaped metal probe pad layer according to the method of the first preferred embodiment of the present invention. 3F1 is a schematic diagram of a gate-shaped metal probe pad layer scheme according to the method of the first preferred embodiment of the present invention. Fig. 4 is a three-dimensional perspective structure for forming a semi-open dielectric layer to measure the electrical conductivity of a metal conductive layer according to the method of the second preferred embodiment of the present invention. The fifth circle is a three-dimensional perspective structure diagram of a fully-opened dielectric layer for measuring the electrical conductivity of the metal conductive layer according to the third preferred embodiment of the present invention. --------- Shang ------. 玎 ------ k (Please read and read the notes on the back before filling in this page.) The detailed description of the system is issued in detail. The standard I, the I, the country, the country, the country, and the secondary side are used in the I side of the country. 7 9 2, printed by the Central Standards Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, P4 32 5 7 5 A7 _B7______ () See FIG. 2 for a cross-sectional structure diagram of a cross-shaped metal probe pad layer formed according to the first preferred embodiment of the present invention. On a semiconductor substrate silicon, a metal conductive layer 201 and a dielectric are provided. Layer 202. The Jinzhan conductive layer 201 is deposited by a conventional deposition method (such as chemical vapor deposition (CVD) or physical vapor deposition (PVD)), wherein the metal conductive layer 201 may be a chemical vapor deposition method. The deposited polycrystalline silicon layer (p0 | ysihcon) 'Tung stensilicide' or metal tungsten layer (Tungsten) 'can also be a silicon copper alloy, titanium deposited by physical vapor deposition (Sputtering). Tungsten alloy or metal titanium. The dielectric layer 202 is deposited on the metal conductive layer 201 by a conventional deposition method, such as Silicon dioxide layer deposited by vapor deposition enamel (CVD) 'nitridation layer 1 嶙 hard glass layer (pSG) or phosphophosphosilicate glass layer (BPSG). The above are made by conventional techniques' The focus of the present invention is therefore not described in detail. At this time, when the electrical measurement of the metal conductive layer 201 is to be performed in series, a focused ion beam ionized with germanium (Ge) on the dielectric layer (Dielectricl_ayer) 202 ( FiB) Scan the impact dielectric layer 202 with an energy of about 30 KeV and a time of about 2 to 10 minutes to dig a contact hole 204 to the metal conducting layer 201 to be measured, and then pass Into a metal compound gas (for example: \ / \ ^ 4 or? 1k), using a focused ion beam ionized by germanium (Ge), with an energy of about 30 KeV and a time of about 5 to 20 minutes, scan the dielectric layer 202, and At the same time, the metal compound gas is impacted to break the bond of the metal compound gas, and the metal atoms of the metal compound gas are separated (for example: tungsten (W) or platinum (Pt >)), and the generated metal source is used ---- --L ---- install ------ order ------ nickel- (please read the precautions on the back before filling (Write this page) This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297 mm) ^ 432575 A7 B7 V. Description of the invention () Fill in the connection hole, "formation ~ metal watching coffee, recording ionization Focused ion beam scans the graph to have a concave curve: energy of about 30 KeV, time of about 5 to 10 minutes, 202, and simultaneously colliding with metal compounds, and using the generated metal] A metal probe with a concave curve circle deposited on the c surface 2 0 3 on the material dream_3 丨 PrObinc Pad) 2〇6D || Mium ionized by M The ion beam selective trace material determines the pattern of the metal probe 206. Therefore, the cross-shaped pattern of the cross-shaped pattern can be formed by the smooth focus ion to form a cross-shaped pattern of the metal probe 205, so that the needle 207 can resist the metal probe. The pin cushion layer 206 increases the convenience and accuracy of metal electrical measurement. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs
根據本發明之第一較佳實施例所述，除了將金屬探針 墊層沈積成具内凹曲線之十字形囷案（參見第3A所示}之 外’亦可改變鍺離子化之衆焦離子束掃描圏形（例如L字 形、圓圈形11部份圆圈形' V字形、Π字形等等 >，使得 經由裝焦離子束撞擊金屬化合物氣體所產生之金屬原 子’沈積於半導體丨C表面上以形成同聚焦離子束掃描圖 形之金屬探針墊層’例如L字形、圓圈形、部份圓圈形、 V字形、Π字形等等（參見第3B至第3F所示），以利於點 針抵住的圖案，不致滑動，好讓點針方便金屬電性的量 測，以增加電性量測之準確性D 參見第4圖所示，爲依據本發明之第二較佳實施例方 本紙張尺度適用中國國家揉準（CNS ) A4規格（2[0X297公釐） ^.- r, —1 一" - IIIII IIM (請先閱讀背面之注意事項再填寫本頁) ΓAccording to the first preferred embodiment of the present invention, in addition to depositing the metal probe pads into a cross-shaped pattern with a concave curve (see Figure 3A), the focus of germanium ionization can also be changed. Ion beam scanning (eg, L-shaped, circle-shaped, 11-part circle-shaped, 'V-shaped, Π-shaped, etc.'), so that metal atoms generated by impacting a metal compound gas by a coking ion beam are deposited on the surface of a semiconductor 丨 C A metal probe pad layer such as an L-shape, a circle shape, a partial circle shape, a V-shape, a Π-shape, and the like to form a confocal ion beam scanning pattern (refer to FIGS. 3B to 3F) to facilitate the needle point The resisted pattern does not slide, so that the needle can facilitate the measurement of the electrical property of the metal to increase the accuracy of the electrical measurement. D Refer to FIG. 4, which is a second preferred embodiment of the present invention. Paper size is applicable to China National Standard (CNS) A4 (2 [0X297 mm) ^ .- r, —1 I "-IIIII IIM (Please read the precautions on the back before filling this page) Γ
臍4 32 5 7 F A7 B7 五、發明説明（） 法，形成半開介電層以測量金屬導電層電性之剖面結構 爾。在一半導體底材矽上，具有金屬導電層401輿介電層 402。金屬導電層401係以習知的沈積方法（例如化學氣 相沈積法（CVD)或物理氣相沈積法（PVD))沈積，其中金屬 導電層401可爲化學氣相沈積法所沈積的多晶矽層 (Polysilicon)、矽化鎢層（Tungsten Silicide)或金屬鎢層 (Tungsten)，亦可爲物理氣相沈積法（¾鐘法Sputtering) 所沈積的鋁矽鋼合金、鈇鎢合金或金屬鈦。介電層402 係以習知的沈積方法沈積於金屬導電層40 1上，例如以化 學氣相沈積法（CVD)所沈積形成的二氧化矽層、氮化矽 層 '磷矽玻璃層（PSG)或碉磷矽玻璃層（BPSG)。以上皆 爲習知的技術製作，在此非本發明之重點因此不加以詳 述。 經濟部中央標準局員工消費合作社印製 此時，當要進行金屬導電層401的電性測量時，係先 通入蝕刻介電層之氣體（例如：蝕刻氣體SF6>，並利用锗 離子化之蒗焦離子束掃描位於金屬導電層401上之半面 區域的介電層402 ’並同時撞擊蝕刻氣體，其能量约30 KeV之間’時間約爲1到1 〇分鐘，使蝕刻氣趙離子化後 之氟原子和位於金屬導電層401上之半面區域之介電層 402内的碎原子反應，生成具揮發性的四氟化砍（siF4)化 合物’以去除金屬導電層401上之半面區域的介電層 402 ’形成半挖開狀（如圉標號403區域）之介電層402， 並曝露出部份金屬導電層401。由於欲測量電性的金屬導 ------------—裝------訂------線 t (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） A7 B7 ^ ^4325 7 5 ^ ^ ^ ~ ^ 五、發明説明（） 電層401上的介電層402已半面被挖空，因此可讓點針 404直接朝著半面被挖空的方向抵住曝露出的部份金屬 導電層，使得金屬電性量測更爲簡易、精準。 參見第5圈所示，爲依據本發明之第三較佳實施例方 法，形成全開介電層以測量金屬導電層電性之剖面結構 圖。在一半導體底材矽上，具有金屬導電層501舆介電層 502。金屬導電層501係以習知的沈積方法（例如化學氣 相沈積法（CVD>或物理氣相沈積法（PVD))沈積，其中金屬 導電層501可爲化學氣相沈積法所沈積的多晶矽層 (Polysilicon)、石夕化鎮層（Tungsten Silicide)或金屬痒層 (Tungsten)，亦可爲物理氣相沈積法（濺鍍法Sputtering) 所沈積的铭發銅合金、鈇轉合金或金屬鈇。介電層502 係以習知的沈積方法沈積於金屬導電層501上，例如以化 學氣相沈積法（CVD)所沈積形成的二氧化矽層、氮化矽 層、磷矽玻璃層（PSG)或碉磷矽玻璃層（BPSG)。以上皆 爲習知的技街製作，在此非本發明之重點因此不加以詳 迎 ° 此時，當要進行金屬導電層5 0 1的電性測量時，係先 通入蝕刻介電層之氣體（例如：蝕刻氣體SFe)，並利用鍺 離子化之聚焦離子束掃描位於金屬導電層501上之全面 區域的介電層502，並同時撞擊蝕刻氣體，其能量約30 KeV之間，時間約爲1到1 〇分鐘，使蝕刻氣體離子化後 本紙乐尺度適用申國國家標準（CNS ) A4規格（210X297公釐） I (i It J. I 裝 I I I I 訂-„ 線 - (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 經濟部中央標箪局員工消費合作社印製 ^ r4 32 5 7 5 A? B7 五、發明説明（） 之氟原子和位於金屬導電屬501上之全面區域之介電層 502内的梦康子反應’生成具揮發性的四氧化發化 合物’以去除金屬導電層501上之全面區域的介電層5〇2 形成全挖開狀（如圈標號503區域>之介電層5〇2，並曝露 出部份金属導電廣501 。由於欲測量電性的金屬導電層 501上的介電廣502已全面被挖空，形成全挖開口之介電 廣502’因此可讓點針504直接朝著全面被挖空的方尚抵 住曝露出的部份金屬導電層’使得點針的量測更具多方向 性，也更能使得金屬電性量測更爲方便。 根據以上所述’傳統之聚焦離子束點針測量方法，係 利用聚焦離子束以高能量掃描撞擊介電層以挖出_接觸 间至欲測量電性的金屬導電層，之後藉由衆焦離子束掃描 撞擊金屬化合物氣體，以產生金屬原子以填入接觸洞並在 半導體丨C表面沈绩成四方形之金屬薄膜，作爲抵住點針 之用的金屬探針墊層。然而由於四方形的金屬探針塾層不 易抵住點針，常造成點針的滑動，導致金屬導電層的電性 誤差，因此根據本發明之第一較佳實施例，係利用改變聚 焦離子束掃描的®形，掃描撞擊金屬化合物氣體之後，使 產生之金屬原子填入接觸洞，並在半導體ic表面沈積成 同衆焦離子束掃描的圖形之多數種具内凹曲線圖案且易 於抵住點針的金屬探針墊層，以方便點針測量。此外，如 第二、第三較佳實施例所述，可在通入蝕刻介電層之氣體 之後，直接利用聚焦離子束掃描位於金屬導電層上之半面 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） — IL·-----^------'玎------^0 (請先閱讀背面之注意事項再填寫本頁) ^4 3257 5Umbilical 4 32 5 7 F A7 B7 V. Description of the invention () method, forming a half-open dielectric layer to measure the electrical cross-section structure of a metal conductive layer. On a semiconductor substrate silicon, a metal conductive layer 401 and a dielectric layer 402 are provided. The metal conductive layer 401 is deposited by a conventional deposition method (such as chemical vapor deposition (CVD) or physical vapor deposition (PVD)). The metal conductive layer 401 may be a polycrystalline silicon layer deposited by chemical vapor deposition. (Polysilicon), tungsten silicide layer (Tungsten Silicide) or metal tungsten layer (Tungsten), or aluminum silicon steel alloy, thorium tungsten alloy, or titanium metal deposited by physical vapor deposition (¾ bell method Sputtering). The dielectric layer 402 is deposited on the metal conductive layer 401 by a conventional deposition method, such as a silicon dioxide layer, a silicon nitride layer, and a 'phosphosilicate glass layer (PSG) formed by chemical vapor deposition (CVD). ) Or phosphophosphosilicate glass layer (BPSG). The above are conventional techniques, which are not the focus of the present invention, so they will not be described in detail. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. At this time, when the electrical measurement of the metal conductive layer 401 is to be performed, a gas for etching the dielectric layer (for example: etching gas SF6>) is used, and The chirped ion beam scans the dielectric layer 402 'located on the half-surface area on the metal conductive layer 401 and simultaneously hits the etching gas with an energy of about 30 KeV' for about 1 to 10 minutes. After ionizing the etching gas, The fluorine atoms react with the broken atoms in the dielectric layer 402 in the half-surface area on the metal conductive layer 401 to generate a volatile tetrafluoride (siF4) compound 'to remove the dielectric in the half-surface area on the metal conductive layer 401. The electrical layer 402 ′ forms a dielectric layer 402 in a semi-cutout shape (such as the area designated by 圉), and exposes a part of the metal conductive layer 401. Since the metal conductivity to be measured is measured ---------- --- installation ------ order ------ line t (please read the notes on the back before filling this page) This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) A7 B7 ^ ^ 4325 7 5 ^ ^ ^ ~ ^ V. Description of the invention () Dielectric on the electrical layer 401 402 has been hollowed out on the half surface, so the needle 404 can be directly pressed against the exposed part of the metal conductive layer in the direction of the hollowed out half surface, making the measurement of metal electrical properties easier and more accurate. See circle 5 Shown is a cross-sectional structure diagram of a fully open dielectric layer for measuring the electrical conductivity of a metal conductive layer according to the method of the third preferred embodiment of the present invention. On a semiconductor substrate silicon, there is a metal conductive layer 501 and a dielectric layer 502 The metal conductive layer 501 is deposited by a conventional deposition method (such as chemical vapor deposition (CVD) or physical vapor deposition (PVD)). The metal conductive layer 501 may be polycrystalline silicon deposited by chemical vapor deposition. Layer (Polysilicon), Tungsten Silicide (Tungsten Silicide) or metal itching layer (Tungsten), can also be physical vapor deposition (Sputtering) deposited Mingfa copper alloy, 鈇 turn alloy or metal 鈇The dielectric layer 502 is deposited on the metal conductive layer 501 by a conventional deposition method, such as a silicon dioxide layer, a silicon nitride layer, and a phosphosilicate glass layer (PSG) formed by chemical vapor deposition (CVD). ) Or phosphophosphosilicate glass BPSG). The above are all known techniques. This is not the focus of the present invention and therefore will not be described in detail. At this time, when the electrical measurement of the metal conductive layer 501 is to be performed, the etching medium is first introduced. Electrical layer gas (eg, etching gas SFe), and the focused ion beam of germanium ionization is used to scan the dielectric layer 502 located on a comprehensive area on the metal conductive layer 501, and simultaneously hit the etching gas with an energy of about 30 KeV The time is about 1 to 10 minutes. After the etching gas is ionized, the paper scale is applied to the Shenyang National Standard (CNS) A4 specification (210X297 mm) I (i It J. I installed IIII order-„line-(Please (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs ^ r4 32 5 7 5 A? Reacts with Meng Kangzi in the dielectric layer 502 in the comprehensive area on the metal conductive metal 501 to 'generate a volatile tetroxide compound' to remove the dielectric layer 50 in the comprehensive area on the metal conductive layer 501 to form a whole Cutout Region 503 > 5〇2 the dielectric layer, and the exposed portion of the conductive metal 501 wide. Since the dielectric 502 on the metal conductive layer 501 to be measured has been completely hollowed out, the dielectric 502 'forming a full-cut opening can be used to point the needle 504 directly toward the fully hollowed-out side. The exposed part of the metal conductive layer makes the measurement of the needle more multi-directional, and it also makes the measurement of metal electrical properties more convenient. According to the above-mentioned 'traditional focused ion beam point needle measurement method, the focused ion beam is used to scan the impinging dielectric layer with high energy to excavate the contact between the contact and the metal conductive layer to be measured. The beam scan strikes the metal compound gas to generate metal atoms to fill the contact holes and sink into a square metal film on the surface of the semiconductor as a metal probe pad for resisting the point needle. However, since the square metal probe 塾 layer is not easy to abut the point needle, which often causes the point needle to slide, resulting in electrical errors in the metal conductive layer, according to the first preferred embodiment of the present invention, the focused ion beam is changed by using Scanned ® shape, after scanning the impact of metal compound gas, the generated metal atoms fill the contact hole, and deposited on the surface of the semiconductor IC into the pattern of the confocal ion beam scanning. Most of them have a concave curve pattern and are easy to resist the point. Needle metal probe cushion for easy point needle measurement. In addition, as described in the second and third preferred embodiments, after the gas for etching the dielectric layer is passed in, a focused ion beam can be directly used to scan the half surface located on the metal conductive layer. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) — IL · ----- ^ ------ '玎 ------ ^ 0 (Please read the notes on the back before filling this page) ^ 4 3257 5
五、發明説明（ 經濟部中央標準局員工消費合作社印製 或全面區域之介電層’並同時撞擊蝕刻氣體，使蝕刻氣趙 離子化後之氟原子和金屬導電層上之半面或全面區域之 介電層内的矽原子反應，生成具揮發性的四氟化矽化合 物，以形成半面被挖開或全面被挖開之介電層，使得漆露 出部份欲測量電性的金屬導電層’可讓點針直接朝著半面 被挖開或全面被挖開介電層的方向抵住金屬導電層，使得 點針量測金屬電性更爲方便與準確。 以上所述僅爲本發明之較佳實施例而已，並非用以限 定本發明之申請專利範園；凡其它未脱離本發明所揭示之 精神下所完成之等效?支變或修飾，均應包含在下述之申請 專利範圍内。 10 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） * 裝 订------r線一T1--- (請先閱讀背面之注意事項再填寫本頁)V. Description of the Invention (The dielectric layer printed or comprehensive area printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs) and simultaneously hits the etching gas to ionize the fluorine atoms of the etching gas and the half or full area on the metal conductive layer. The silicon atoms in the dielectric layer react to form a volatile silicon tetrafluoride compound to form a dielectric layer that is half-cut or fully-cut, so that the exposed part of the paint is a conductive metal layer to be measured. The needle can be directly pressed against the metal conductive layer in the direction of the half-faced or fully-digested dielectric layer, making the point needle more convenient and accurate for measuring the electrical properties of metals. The above description is only a comparison of the present invention. It is only a good example and is not intended to limit the scope of patent application for the present invention; all other equivalents, changes or modifications that do not depart from the spirit disclosed by the present invention should be included in the scope of patent application described below . 10 This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) * Binding --- r line one T1 --- (Please read the precautions on the back before filling this page)