JP2012238371A5 - - Google Patents

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Publication number
JP2012238371A5
JP2012238371A5 JP2012088767A JP2012088767A JP2012238371A5 JP 2012238371 A5 JP2012238371 A5 JP 2012238371A5 JP 2012088767 A JP2012088767 A JP 2012088767A JP 2012088767 A JP2012088767 A JP 2012088767A JP 2012238371 A5 JP2012238371 A5 JP 2012238371A5
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JP
Japan
Prior art keywords
word line
memory
array
layer
erase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012088767A
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English (en)
Japanese (ja)
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JP2012238371A (ja
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Publication date
Priority claimed from US13/099,298 external-priority patent/US8488387B2/en
Application filed filed Critical
Publication of JP2012238371A publication Critical patent/JP2012238371A/ja
Publication of JP2012238371A5 publication Critical patent/JP2012238371A5/ja
Pending legal-status Critical Current

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JP2012088767A 2011-05-02 2012-04-09 熱アシスト誘電体電荷トラップメモリ Pending JP2012238371A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/099,298 2011-05-02
US13/099,298 US8488387B2 (en) 2011-05-02 2011-05-02 Thermally assisted dielectric charge trapping flash

Publications (2)

Publication Number Publication Date
JP2012238371A JP2012238371A (ja) 2012-12-06
JP2012238371A5 true JP2012238371A5 (enExample) 2014-07-17

Family

ID=46026602

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012088767A Pending JP2012238371A (ja) 2011-05-02 2012-04-09 熱アシスト誘電体電荷トラップメモリ
JP2012104767A Active JP6049297B2 (ja) 2011-05-02 2012-05-01 ダイオードストラッピングを備えた熱アシストフラッシュメモリ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012104767A Active JP6049297B2 (ja) 2011-05-02 2012-05-01 ダイオードストラッピングを備えた熱アシストフラッシュメモリ

Country Status (6)

Country Link
US (1) US8488387B2 (enExample)
EP (2) EP2521135B1 (enExample)
JP (2) JP2012238371A (enExample)
KR (2) KR101932465B1 (enExample)
CN (1) CN102856326B (enExample)
TW (1) TWI494928B (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3176180B2 (ja) 1993-06-30 2001-06-11 京セラ株式会社 光アイソレータ
US8724393B2 (en) 2011-05-02 2014-05-13 Macronix International Co., Ltd. Thermally assisted flash memory with diode strapping
US9001590B2 (en) 2011-05-02 2015-04-07 Macronix International Co., Ltd. Method for operating a semiconductor structure
US8824212B2 (en) * 2011-05-02 2014-09-02 Macronix International Co., Ltd. Thermally assisted flash memory with segmented word lines
JP2012244180A (ja) 2011-05-24 2012-12-10 Macronix Internatl Co Ltd 多層接続構造及びその製造方法
TWI487071B (zh) * 2012-12-11 2015-06-01 Macronix Int Co Ltd 具有二極體搭接之熱輔助快閃記憶體
CN103871468A (zh) * 2012-12-12 2014-06-18 旺宏电子股份有限公司 一种具有二极管搭接的热辅助闪存的操作方法
US9123778B2 (en) 2013-03-13 2015-09-01 Macronix International Co., Ltd. Damascene conductor for 3D array
US9099538B2 (en) 2013-09-17 2015-08-04 Macronix International Co., Ltd. Conductor with a plurality of vertical extensions for a 3D device
US9059120B2 (en) 2013-11-12 2015-06-16 International Business Machines Corporation In-situ relaxation for improved CMOS product lifetime
CN105830218B (zh) * 2013-12-18 2018-04-06 惠普发展公司，有限责任合伙企业 具有热辅助开关控制的非易失性存储器元件
US9348748B2 (en) 2013-12-24 2016-05-24 Macronix International Co., Ltd. Heal leveling
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US9209172B2 (en) 2014-05-08 2015-12-08 International Business Machines Corporation FinFET and fin-passive devices
US9336878B2 (en) 2014-06-18 2016-05-10 Macronix International Co., Ltd. Method and apparatus for healing phase change memory devices
US9466371B2 (en) * 2014-07-29 2016-10-11 Macronix International Co., Ltd. Transistor and circuit using same
TWI553644B (zh) * 2014-12-25 2016-10-11 旺宏電子股份有限公司 記憶體陣列及其操作方法
US20160218286A1 (en) 2015-01-23 2016-07-28 Macronix International Co., Ltd. Capped contact structure with variable adhesion layer thickness
US9275744B1 (en) 2015-01-29 2016-03-01 International Business Machines Corporation Method of restoring a flash memory in an integrated circuit chip package by addition of heat and an electric field
US9672920B2 (en) * 2015-03-13 2017-06-06 Macronix International Co., Ltd. Electronic device, non-volatile memorty device, and programming method
JP2017011123A (ja) * 2015-06-23 2017-01-12 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の駆動方法
US10467134B2 (en) 2016-08-25 2019-11-05 Sandisk Technologies Llc Dynamic anneal characteristics for annealing non-volatile memory
US9761290B1 (en) 2016-08-25 2017-09-12 Sandisk Technologies Llc Overheat prevention for annealing non-volatile memory
JP2018142240A (ja) 2017-02-28 2018-09-13 東芝メモリ株式会社 メモリシステム
US10163926B2 (en) * 2017-05-16 2018-12-25 Macronix International Co., Ltd. Memory device and method for fabricating the same
US10014390B1 (en) 2017-10-10 2018-07-03 Globalfoundries Inc. Inner spacer formation for nanosheet field-effect transistors with tall suspensions
CN110112135A (zh) * 2019-04-12 2019-08-09 山东大学 一种提高三维nand闪存存储器耐久性的方法
US11678486B2 (en) 2019-06-03 2023-06-13 Macronix Iniernational Co., Ltd. 3D flash memory with annular channel structure and array layout thereof
US10916308B2 (en) 2019-06-03 2021-02-09 Macronix International Co., Ltd. 3D flash memory module and healing and operating methods of 3D flash memory
US10943952B2 (en) * 2019-06-10 2021-03-09 Sandisk Technologies Llc Threshold switch for memory
US11133329B2 (en) 2019-09-09 2021-09-28 Macronix International Co., Ltd. 3D and flash memory architecture with FeFET
KR102710332B1 (ko) * 2021-10-12 2024-09-27 충북대학교 산학협력단 3차원 플래시 메모리 구동 방법
US11989091B2 (en) 2021-11-12 2024-05-21 Samsung Electronics Co., Ltd. Memory system for performing recovery operation, memory device, and method of operating the same
US12200925B2 (en) 2022-04-19 2025-01-14 Macronix International Co., Ltd. Capacitors in memory devices
US20240324225A1 (en) * 2023-03-20 2024-09-26 Ememory Technology Inc. Storage transistor of charge-trapping non-volatile memory
US12437820B2 (en) 2023-05-18 2025-10-07 Macronix International Co., Ltd. Memory including thermal anneal circuits and methods for operating the same

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6251717B1 (en) 1998-09-30 2001-06-26 Advanced Micro Devices, Inc. Viable memory cell formed using rapid thermal annealing
US6009033A (en) * 1998-11-24 1999-12-28 Advanced Micro Devices, Inc. Method of programming and erasing an EEPROM device under an elevated temperature and apparatus thereof
JP3467479B2 (ja) * 2000-05-19 2003-11-17 松下電器産業株式会社 不揮発性半導体記憶装置
US7173842B2 (en) * 2004-03-31 2007-02-06 Intel Corporation Metal heater for in situ heating and crystallization of ferroelectric polymer memory film
US7064414B2 (en) * 2004-11-12 2006-06-20 International Business Machines Corporation Heater for annealing trapped charge in a semiconductor device
US7315474B2 (en) 2005-01-03 2008-01-01 Macronix International Co., Ltd Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
US7709334B2 (en) * 2005-12-09 2010-05-04 Macronix International Co., Ltd. Stacked non-volatile memory device and methods for fabricating the same
JP2006196650A (ja) * 2005-01-13 2006-07-27 Sharp Corp 半導体不揮発性メモリ装置およびその消去方法
US7301818B2 (en) * 2005-09-12 2007-11-27 Macronix International Co., Ltd. Hole annealing methods of non-volatile memory cells
KR100673019B1 (ko) * 2005-12-12 2007-01-24 삼성전자주식회사 적층 구조를 가지는 낸드형 비휘발성 메모리 장치, 그 형성방법 및 동작 방법
JP4907173B2 (ja) * 2006-01-05 2012-03-28 マクロニクス インターナショナル カンパニー リミテッド 不揮発性メモリセル、これを有するメモリアレイ、並びに、セル及びアレイの操作方法
US7382654B2 (en) 2006-03-31 2008-06-03 Macronix International Co., Ltd. Trapping storage flash memory cell structure with inversion source and drain regions
US7704847B2 (en) * 2006-05-19 2010-04-27 International Business Machines Corporation On-chip heater and methods for fabrication thereof and use thereof
US7414889B2 (en) * 2006-05-23 2008-08-19 Macronix International Co., Ltd. Structure and method of sub-gate and architectures employing bandgap engineered SONOS devices
JP2008034456A (ja) * 2006-07-26 2008-02-14 Toshiba Corp 不揮発性半導体記憶装置
KR20090097893A (ko) * 2006-11-29 2009-09-16 램버스 인코포레이티드 작동열화를 반전시킬 가열회로가 내장된 집적회로
US8344475B2 (en) * 2006-11-29 2013-01-01 Rambus Inc. Integrated circuit heating to effect in-situ annealing
US8085615B2 (en) * 2006-12-29 2011-12-27 Spansion Llc Multi-state resistance changing memory with a word line driver for applying a same program voltage to the word line
US7719048B1 (en) * 2007-04-26 2010-05-18 National Semiconductor Corporation Heating element for enhanced E2PROM
US7737488B2 (en) 2007-08-09 2010-06-15 Macronix International Co., Ltd. Blocking dielectric engineered charge trapping memory cell with high speed erase
TWI374448B (en) * 2007-08-13 2012-10-11 Macronix Int Co Ltd Charge trapping memory cell with high speed erase
US7816727B2 (en) * 2007-08-27 2010-10-19 Macronix International Co., Ltd. High-κ capped blocking dielectric bandgap engineered SONOS and MONOS
EP2191473A2 (en) * 2007-09-05 2010-06-02 Rambus Inc. Method and apparatus to repair defects in nonvolatile semiconductor memory devices
JP4521433B2 (ja) * 2007-09-18 2010-08-11 シャープ株式会社 半導体素子及びこの半導体素子を用いた装置
KR20090037690A (ko) 2007-10-12 2009-04-16 삼성전자주식회사 비휘발성 메모리 소자, 그 동작 방법 및 그 제조 방법
WO2009072100A2 (en) 2007-12-05 2009-06-11 Densbits Technologies Ltd. Systems and methods for temporarily retiring memory portions
US7838958B2 (en) * 2008-01-10 2010-11-23 International Business Machines Corporation Semiconductor on-chip repair scheme for negative bias temperature instability
WO2010038581A1 (en) * 2008-10-02 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8004918B2 (en) 2009-03-25 2011-08-23 Infineon Technologies Ag Memory cell heating elements
WO2011022123A1 (en) 2009-08-21 2011-02-24 Rambus Inc. In-situ memory annealing

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