JP2012238371A - 熱アシスト誘電体電荷トラップメモリ - Google Patents

熱アシスト誘電体電荷トラップメモリ Download PDF

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Publication number
JP2012238371A
JP2012238371A JP2012088767A JP2012088767A JP2012238371A JP 2012238371 A JP2012238371 A JP 2012238371A JP 2012088767 A JP2012088767 A JP 2012088767A JP 2012088767 A JP2012088767 A JP 2012088767A JP 2012238371 A JP2012238371 A JP 2012238371A
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JP
Japan
Prior art keywords
word line
memory
erase
array
program
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012088767A
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English (en)
Japanese (ja)
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JP2012238371A5 (enExample
Inventor
Hang-Ting Lue
リュ ハン−ティン
Chih-Ping Chen
チェン チー−ピン
Chih-Chiang Xie
シエ チー−チャン
Yi-Hsuan Hsiao
シャオ イ−シュアン
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Macronix International Co Ltd
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Macronix International Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix International Co Ltd filed Critical Macronix International Co Ltd
Publication of JP2012238371A publication Critical patent/JP2012238371A/ja
Publication of JP2012238371A5 publication Critical patent/JP2012238371A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
JP2012088767A 2011-05-02 2012-04-09 熱アシスト誘電体電荷トラップメモリ Pending JP2012238371A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/099,298 US8488387B2 (en) 2011-05-02 2011-05-02 Thermally assisted dielectric charge trapping flash
US13/099,298 2011-05-02

Publications (2)

Publication Number Publication Date
JP2012238371A true JP2012238371A (ja) 2012-12-06
JP2012238371A5 JP2012238371A5 (enExample) 2014-07-17

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012088767A Pending JP2012238371A (ja) 2011-05-02 2012-04-09 熱アシスト誘電体電荷トラップメモリ
JP2012104767A Active JP6049297B2 (ja) 2011-05-02 2012-05-01 ダイオードストラッピングを備えた熱アシストフラッシュメモリ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012104767A Active JP6049297B2 (ja) 2011-05-02 2012-05-01 ダイオードストラッピングを備えた熱アシストフラッシュメモリ

Country Status (6)

Country Link
US (1) US8488387B2 (enExample)
EP (2) EP2521135B1 (enExample)
JP (2) JP2012238371A (enExample)
KR (2) KR101932465B1 (enExample)
CN (1) CN102856326B (enExample)
TW (1) TWI494928B (enExample)

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US9123778B2 (en) 2013-03-13 2015-09-01 Macronix International Co., Ltd. Damascene conductor for 3D array
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US9059120B2 (en) 2013-11-12 2015-06-16 International Business Machines Corporation In-situ relaxation for improved CMOS product lifetime
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US9348748B2 (en) 2013-12-24 2016-05-24 Macronix International Co., Ltd. Heal leveling
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
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US9672920B2 (en) * 2015-03-13 2017-06-06 Macronix International Co., Ltd. Electronic device, non-volatile memorty device, and programming method
JP2017011123A (ja) 2015-06-23 2017-01-12 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の駆動方法
US10467134B2 (en) 2016-08-25 2019-11-05 Sandisk Technologies Llc Dynamic anneal characteristics for annealing non-volatile memory
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US10163926B2 (en) * 2017-05-16 2018-12-25 Macronix International Co., Ltd. Memory device and method for fabricating the same
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US10916308B2 (en) 2019-06-03 2021-02-09 Macronix International Co., Ltd. 3D flash memory module and healing and operating methods of 3D flash memory
TWI738202B (zh) 2019-06-03 2021-09-01 旺宏電子股份有限公司 三維快閃記憶體及其陣列佈局
US10943952B2 (en) * 2019-06-10 2021-03-09 Sandisk Technologies Llc Threshold switch for memory
US11133329B2 (en) 2019-09-09 2021-09-28 Macronix International Co., Ltd. 3D and flash memory architecture with FeFET
KR20220150552A (ko) * 2021-05-04 2022-11-11 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
KR102710332B1 (ko) * 2021-10-12 2024-09-27 충북대학교 산학협력단 3차원 플래시 메모리 구동 방법
US11989091B2 (en) 2021-11-12 2024-05-21 Samsung Electronics Co., Ltd. Memory system for performing recovery operation, memory device, and method of operating the same
KR102944769B1 (ko) 2021-12-10 2026-03-30 삼성전자주식회사 반도체 장치
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US20240324225A1 (en) * 2023-03-20 2024-09-26 Ememory Technology Inc. Storage transistor of charge-trapping non-volatile memory
US12437820B2 (en) * 2023-05-18 2025-10-07 Macronix International Co., Ltd. Memory including thermal anneal circuits and methods for operating the same

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Also Published As

Publication number Publication date
EP2521135B1 (en) 2018-05-02
US8488387B2 (en) 2013-07-16
TWI494928B (zh) 2015-08-01
KR101932465B1 (ko) 2019-03-20
TW201250693A (en) 2012-12-16
CN102856326A (zh) 2013-01-02
EP2528061B1 (en) 2015-09-02
JP2012238375A (ja) 2012-12-06
EP2528061A2 (en) 2012-11-28
KR102007271B1 (ko) 2019-08-05
US20120281481A1 (en) 2012-11-08
EP2528061A3 (en) 2013-12-25
EP2521135A1 (en) 2012-11-07
JP6049297B2 (ja) 2016-12-21
KR20120124045A (ko) 2012-11-12
KR20120124024A (ko) 2012-11-12
CN102856326B (zh) 2015-04-15

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