CN102856326B - 具有二极管搭接的热辅助闪存及其操作和制造方法 - Google Patents
具有二极管搭接的热辅助闪存及其操作和制造方法 Download PDFInfo
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- CN102856326B CN102856326B CN201210133486.7A CN201210133486A CN102856326B CN 102856326 B CN102856326 B CN 102856326B CN 201210133486 A CN201210133486 A CN 201210133486A CN 102856326 B CN102856326 B CN 102856326B
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/099,298 | 2011-05-02 | ||
| US13/099,298 US8488387B2 (en) | 2011-05-02 | 2011-05-02 | Thermally assisted dielectric charge trapping flash |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102856326A CN102856326A (zh) | 2013-01-02 |
| CN102856326B true CN102856326B (zh) | 2015-04-15 |
Family
ID=46026602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210133486.7A Active CN102856326B (zh) | 2011-05-02 | 2012-05-02 | 具有二极管搭接的热辅助闪存及其操作和制造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8488387B2 (enExample) |
| EP (2) | EP2521135B1 (enExample) |
| JP (2) | JP2012238371A (enExample) |
| KR (2) | KR101932465B1 (enExample) |
| CN (1) | CN102856326B (enExample) |
| TW (1) | TWI494928B (enExample) |
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| JP3176180B2 (ja) | 1993-06-30 | 2001-06-11 | 京セラ株式会社 | 光アイソレータ |
| US8724393B2 (en) | 2011-05-02 | 2014-05-13 | Macronix International Co., Ltd. | Thermally assisted flash memory with diode strapping |
| US9001590B2 (en) | 2011-05-02 | 2015-04-07 | Macronix International Co., Ltd. | Method for operating a semiconductor structure |
| US8824212B2 (en) * | 2011-05-02 | 2014-09-02 | Macronix International Co., Ltd. | Thermally assisted flash memory with segmented word lines |
| JP2012244180A (ja) | 2011-05-24 | 2012-12-10 | Macronix Internatl Co Ltd | 多層接続構造及びその製造方法 |
| TWI487071B (zh) * | 2012-12-11 | 2015-06-01 | Macronix Int Co Ltd | 具有二極體搭接之熱輔助快閃記憶體 |
| CN103871468A (zh) * | 2012-12-12 | 2014-06-18 | 旺宏电子股份有限公司 | 一种具有二极管搭接的热辅助闪存的操作方法 |
| US9123778B2 (en) | 2013-03-13 | 2015-09-01 | Macronix International Co., Ltd. | Damascene conductor for 3D array |
| US9099538B2 (en) | 2013-09-17 | 2015-08-04 | Macronix International Co., Ltd. | Conductor with a plurality of vertical extensions for a 3D device |
| US9059120B2 (en) | 2013-11-12 | 2015-06-16 | International Business Machines Corporation | In-situ relaxation for improved CMOS product lifetime |
| CN105830218B (zh) * | 2013-12-18 | 2018-04-06 | 惠普发展公司，有限责任合伙企业 | 具有热辅助开关控制的非易失性存储器元件 |
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| US9466371B2 (en) * | 2014-07-29 | 2016-10-11 | Macronix International Co., Ltd. | Transistor and circuit using same |
| TWI553644B (zh) * | 2014-12-25 | 2016-10-11 | 旺宏電子股份有限公司 | 記憶體陣列及其操作方法 |
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| JP2017011123A (ja) * | 2015-06-23 | 2017-01-12 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の駆動方法 |
| US10467134B2 (en) | 2016-08-25 | 2019-11-05 | Sandisk Technologies Llc | Dynamic anneal characteristics for annealing non-volatile memory |
| US9761290B1 (en) | 2016-08-25 | 2017-09-12 | Sandisk Technologies Llc | Overheat prevention for annealing non-volatile memory |
| JP2018142240A (ja) | 2017-02-28 | 2018-09-13 | 東芝メモリ株式会社 | メモリシステム |
| US10163926B2 (en) * | 2017-05-16 | 2018-12-25 | Macronix International Co., Ltd. | Memory device and method for fabricating the same |
| US10014390B1 (en) | 2017-10-10 | 2018-07-03 | Globalfoundries Inc. | Inner spacer formation for nanosheet field-effect transistors with tall suspensions |
| CN110112135A (zh) * | 2019-04-12 | 2019-08-09 | 山东大学 | 一种提高三维nand闪存存储器耐久性的方法 |
| US11678486B2 (en) | 2019-06-03 | 2023-06-13 | Macronix Iniernational Co., Ltd. | 3D flash memory with annular channel structure and array layout thereof |
| US10916308B2 (en) | 2019-06-03 | 2021-02-09 | Macronix International Co., Ltd. | 3D flash memory module and healing and operating methods of 3D flash memory |
| US10943952B2 (en) * | 2019-06-10 | 2021-03-09 | Sandisk Technologies Llc | Threshold switch for memory |
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| KR102710332B1 (ko) * | 2021-10-12 | 2024-09-27 | 충북대학교 산학협력단 | 3차원 플래시 메모리 구동 방법 |
| US11989091B2 (en) | 2021-11-12 | 2024-05-21 | Samsung Electronics Co., Ltd. | Memory system for performing recovery operation, memory device, and method of operating the same |
| US12200925B2 (en) | 2022-04-19 | 2025-01-14 | Macronix International Co., Ltd. | Capacitors in memory devices |
| US20240324225A1 (en) * | 2023-03-20 | 2024-09-26 | Ememory Technology Inc. | Storage transistor of charge-trapping non-volatile memory |
| US12437820B2 (en) | 2023-05-18 | 2025-10-07 | Macronix International Co., Ltd. | Memory including thermal anneal circuits and methods for operating the same |
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| CN101521207A (zh) * | 2006-05-23 | 2009-09-02 | 旺宏电子股份有限公司 | 集成电路 |
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2011
- 2011-05-02 US US13/099,298 patent/US8488387B2/en active Active
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2012
- 2012-04-09 JP JP2012088767A patent/JP2012238371A/ja active Pending
- 2012-04-10 EP EP12163608.8A patent/EP2521135B1/en active Active
- 2012-04-16 KR KR1020120039044A patent/KR101932465B1/ko active Active
- 2012-04-30 EP EP12166199.5A patent/EP2528061B1/en active Active
- 2012-05-01 JP JP2012104767A patent/JP6049297B2/ja active Active
- 2012-05-02 KR KR1020120046510A patent/KR102007271B1/ko active Active
- 2012-05-02 CN CN201210133486.7A patent/CN102856326B/zh active Active
- 2012-05-02 TW TW101115558A patent/TWI494928B/zh active
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| Publication number | Publication date |
|---|---|
| TWI494928B (zh) | 2015-08-01 |
| KR20120124024A (ko) | 2012-11-12 |
| CN102856326A (zh) | 2013-01-02 |
| EP2528061A3 (en) | 2013-12-25 |
| JP2012238371A (ja) | 2012-12-06 |
| EP2528061A2 (en) | 2012-11-28 |
| US8488387B2 (en) | 2013-07-16 |
| JP2012238375A (ja) | 2012-12-06 |
| KR20120124045A (ko) | 2012-11-12 |
| EP2528061B1 (en) | 2015-09-02 |
| JP6049297B2 (ja) | 2016-12-21 |
| EP2521135B1 (en) | 2018-05-02 |
| KR102007271B1 (ko) | 2019-08-05 |
| TW201250693A (en) | 2012-12-16 |
| KR101932465B1 (ko) | 2019-03-20 |
| US20120281481A1 (en) | 2012-11-08 |
| EP2521135A1 (en) | 2012-11-07 |
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