TWI494928B - 具有二極體搭接之熱輔助快閃記憶體 - Google Patents

具有二極體搭接之熱輔助快閃記憶體 Download PDF

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Publication number
TWI494928B
TWI494928B TW101115558A TW101115558A TWI494928B TW I494928 B TWI494928 B TW I494928B TW 101115558 A TW101115558 A TW 101115558A TW 101115558 A TW101115558 A TW 101115558A TW I494928 B TWI494928 B TW I494928B
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TW
Taiwan
Prior art keywords
word line
layer
coupled
memory
word lines
Prior art date
Application number
TW101115558A
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English (en)
Chinese (zh)
Other versions
TW201250693A (en
Inventor
Hang Ting Lue
Chun Hsiung Hung
Ming Chang Kuo
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Macronix Int Co Ltd
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Publication of TW201250693A publication Critical patent/TW201250693A/zh
Application granted granted Critical
Publication of TWI494928B publication Critical patent/TWI494928B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
TW101115558A 2011-05-02 2012-05-02 具有二極體搭接之熱輔助快閃記憶體 TWI494928B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/099,298 US8488387B2 (en) 2011-05-02 2011-05-02 Thermally assisted dielectric charge trapping flash

Publications (2)

Publication Number Publication Date
TW201250693A TW201250693A (en) 2012-12-16
TWI494928B true TWI494928B (zh) 2015-08-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW101115558A TWI494928B (zh) 2011-05-02 2012-05-02 具有二極體搭接之熱輔助快閃記憶體

Country Status (6)

Country Link
US (1) US8488387B2 (enExample)
EP (2) EP2521135B1 (enExample)
JP (2) JP2012238371A (enExample)
KR (2) KR101932465B1 (enExample)
CN (1) CN102856326B (enExample)
TW (1) TWI494928B (enExample)

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US9123778B2 (en) 2013-03-13 2015-09-01 Macronix International Co., Ltd. Damascene conductor for 3D array
US9099538B2 (en) 2013-09-17 2015-08-04 Macronix International Co., Ltd. Conductor with a plurality of vertical extensions for a 3D device
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US9348748B2 (en) 2013-12-24 2016-05-24 Macronix International Co., Ltd. Heal leveling
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US9209172B2 (en) 2014-05-08 2015-12-08 International Business Machines Corporation FinFET and fin-passive devices
US9336878B2 (en) 2014-06-18 2016-05-10 Macronix International Co., Ltd. Method and apparatus for healing phase change memory devices
US9466371B2 (en) * 2014-07-29 2016-10-11 Macronix International Co., Ltd. Transistor and circuit using same
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US20160218286A1 (en) 2015-01-23 2016-07-28 Macronix International Co., Ltd. Capped contact structure with variable adhesion layer thickness
US9275744B1 (en) 2015-01-29 2016-03-01 International Business Machines Corporation Method of restoring a flash memory in an integrated circuit chip package by addition of heat and an electric field
US9672920B2 (en) * 2015-03-13 2017-06-06 Macronix International Co., Ltd. Electronic device, non-volatile memorty device, and programming method
JP2017011123A (ja) * 2015-06-23 2017-01-12 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の駆動方法
US10467134B2 (en) 2016-08-25 2019-11-05 Sandisk Technologies Llc Dynamic anneal characteristics for annealing non-volatile memory
US9761290B1 (en) 2016-08-25 2017-09-12 Sandisk Technologies Llc Overheat prevention for annealing non-volatile memory
JP2018142240A (ja) 2017-02-28 2018-09-13 東芝メモリ株式会社 メモリシステム
US10163926B2 (en) * 2017-05-16 2018-12-25 Macronix International Co., Ltd. Memory device and method for fabricating the same
US10014390B1 (en) 2017-10-10 2018-07-03 Globalfoundries Inc. Inner spacer formation for nanosheet field-effect transistors with tall suspensions
CN110112135A (zh) * 2019-04-12 2019-08-09 山东大学 一种提高三维nand闪存存储器耐久性的方法
US11678486B2 (en) 2019-06-03 2023-06-13 Macronix Iniernational Co., Ltd. 3D flash memory with annular channel structure and array layout thereof
US10916308B2 (en) 2019-06-03 2021-02-09 Macronix International Co., Ltd. 3D flash memory module and healing and operating methods of 3D flash memory
US10943952B2 (en) * 2019-06-10 2021-03-09 Sandisk Technologies Llc Threshold switch for memory
US11133329B2 (en) 2019-09-09 2021-09-28 Macronix International Co., Ltd. 3D and flash memory architecture with FeFET
KR102710332B1 (ko) * 2021-10-12 2024-09-27 충북대학교 산학협력단 3차원 플래시 메모리 구동 방법
US11989091B2 (en) 2021-11-12 2024-05-21 Samsung Electronics Co., Ltd. Memory system for performing recovery operation, memory device, and method of operating the same
US12200925B2 (en) 2022-04-19 2025-01-14 Macronix International Co., Ltd. Capacitors in memory devices
US20240324225A1 (en) * 2023-03-20 2024-09-26 Ememory Technology Inc. Storage transistor of charge-trapping non-volatile memory
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Also Published As

Publication number Publication date
CN102856326B (zh) 2015-04-15
KR20120124024A (ko) 2012-11-12
CN102856326A (zh) 2013-01-02
EP2528061A3 (en) 2013-12-25
JP2012238371A (ja) 2012-12-06
EP2528061A2 (en) 2012-11-28
US8488387B2 (en) 2013-07-16
JP2012238375A (ja) 2012-12-06
KR20120124045A (ko) 2012-11-12
EP2528061B1 (en) 2015-09-02
JP6049297B2 (ja) 2016-12-21
EP2521135B1 (en) 2018-05-02
KR102007271B1 (ko) 2019-08-05
TW201250693A (en) 2012-12-16
KR101932465B1 (ko) 2019-03-20
US20120281481A1 (en) 2012-11-08
EP2521135A1 (en) 2012-11-07

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