JP2021501956A5 - - Google Patents
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- Publication number
- JP2021501956A5 JP2021501956A5 JP2020524440A JP2020524440A JP2021501956A5 JP 2021501956 A5 JP2021501956 A5 JP 2021501956A5 JP 2020524440 A JP2020524440 A JP 2020524440A JP 2020524440 A JP2020524440 A JP 2020524440A JP 2021501956 A5 JP2021501956 A5 JP 2021501956A5
- Authority
- JP
- Japan
- Prior art keywords
- read current
- offset value
- voltage
- memory cells
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000005641 tunneling Effects 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762581489P | 2017-11-03 | 2017-11-03 | |
| US62/581,489 | 2017-11-03 | ||
| US16/148,304 US10515694B2 (en) | 2017-11-03 | 2018-10-01 | System and method for storing multibit data in non-volatile memory |
| US16/148,304 | 2018-10-01 | ||
| PCT/US2018/053930 WO2019089168A1 (en) | 2017-11-03 | 2018-10-02 | System and method for storing multibit data in non-volatile memory |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021501956A JP2021501956A (ja) | 2021-01-21 |
| JP2021501956A5 true JP2021501956A5 (enExample) | 2021-11-11 |
| JP6970826B2 JP6970826B2 (ja) | 2021-11-24 |
Family
ID=66327523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020524440A Active JP6970826B2 (ja) | 2017-11-03 | 2018-10-02 | 不揮発性メモリにマルチビットデータを記憶するためのシステム及び方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10515694B2 (enExample) |
| EP (1) | EP3704700B1 (enExample) |
| JP (1) | JP6970826B2 (enExample) |
| KR (1) | KR102199607B1 (enExample) |
| CN (1) | CN111344791B (enExample) |
| TW (1) | TWI682393B (enExample) |
| WO (1) | WO2019089168A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100671698B1 (ko) * | 2004-08-05 | 2007-01-18 | 매그나칩 반도체 유한회사 | 엘디아이 내 디지털 아날로그 변환기의 테스트 장치 |
| US10991433B2 (en) * | 2019-09-03 | 2021-04-27 | Silicon Storage Technology, Inc. | Method of improving read current stability in analog non-volatile memory by limiting time gap between erase and program |
| US11682459B2 (en) * | 2020-05-13 | 2023-06-20 | Silicon Storage Technology, Inc. | Analog neural memory array in artificial neural network comprising logical cells and improved programming mechanism |
| US12080355B2 (en) | 2021-06-02 | 2024-09-03 | Silicon Storage Technology, Inc. | Method of improving read current stability in analog non-volatile memory by post-program tuning for memory cells exhibiting random telegraph noise |
| US11769558B2 (en) * | 2021-06-08 | 2023-09-26 | Silicon Storage Technology, Inc. | Method of reducing random telegraph noise in non-volatile memory by grouping and screening memory cells |
| KR102703459B1 (ko) | 2021-11-29 | 2024-09-06 | 충남대학교 산학협력단 | 멀티 레벨 구동이 가능한 메모리 소자 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5029130A (en) | 1990-01-22 | 1991-07-02 | Silicon Storage Technology, Inc. | Single transistor non-valatile electrically alterable semiconductor memory device |
| JP2812202B2 (ja) * | 1994-06-27 | 1998-10-22 | ヤマハ株式会社 | 半導体記憶装置 |
| KR100324594B1 (ko) | 1999-06-28 | 2002-02-16 | 박종섭 | 강유전체 메모리 장치 |
| US7082056B2 (en) | 2004-03-12 | 2006-07-25 | Super Talent Electronics, Inc. | Flash memory device and architecture with multi level cells |
| US7324374B2 (en) | 2003-06-20 | 2008-01-29 | Spansion Llc | Memory with a core-based virtual ground and dynamic reference sensing scheme |
| US7315056B2 (en) | 2004-06-07 | 2008-01-01 | Silicon Storage Technology, Inc. | Semiconductor memory array of floating gate memory cells with program/erase and select gates |
| US7554856B2 (en) * | 2006-10-06 | 2009-06-30 | Qimonda Flash Gmbh & Co. Kg | Memory cell |
| US20090039410A1 (en) | 2007-08-06 | 2009-02-12 | Xian Liu | Split Gate Non-Volatile Flash Memory Cell Having A Floating Gate, Control Gate, Select Gate And An Erase Gate With An Overhang Over The Floating Gate, Array And Method Of Manufacturing |
| US8238149B2 (en) | 2009-06-25 | 2012-08-07 | Macronix International Co., Ltd. | Methods and apparatus for reducing defect bits in phase change memory |
| JP2012209004A (ja) | 2011-03-30 | 2012-10-25 | Toshiba Corp | 半導体記憶装置 |
| US9099202B2 (en) * | 2012-11-06 | 2015-08-04 | Sandisk Technologies Inc. | 3D stacked non-volatile storage programming to conductive state |
| KR102043723B1 (ko) | 2013-02-28 | 2019-12-02 | 에스케이하이닉스 주식회사 | 반도체 장치 및 이를 포함하는 프로세서와 시스템 |
| KR101716998B1 (ko) | 2013-03-14 | 2017-03-15 | 실리콘 스토리지 테크놀로지 인크 | 비휘발성 메모리 프로그램 알고리즘 디바이스 및 방법 |
| US20150085571A1 (en) * | 2013-09-24 | 2015-03-26 | Sandisk Technologies Inc. | Updating read voltages |
| US9543041B2 (en) * | 2014-08-29 | 2017-01-10 | Everspin Technologies, Inc. | Configuration and testing for magnetoresistive memory to ensure long term continuous operation |
| US9905302B2 (en) * | 2014-11-20 | 2018-02-27 | Western Digital Technologies, Inc. | Read level grouping algorithms for increased flash performance |
| US9484094B2 (en) | 2015-01-21 | 2016-11-01 | Ememory Technology Inc. | Control method of resistive random-access memory |
-
2018
- 2018-10-01 US US16/148,304 patent/US10515694B2/en active Active
- 2018-10-02 WO PCT/US2018/053930 patent/WO2019089168A1/en not_active Ceased
- 2018-10-02 KR KR1020207010818A patent/KR102199607B1/ko active Active
- 2018-10-02 EP EP18872824.0A patent/EP3704700B1/en active Active
- 2018-10-02 JP JP2020524440A patent/JP6970826B2/ja active Active
- 2018-10-02 CN CN201880068646.XA patent/CN111344791B/zh active Active
- 2018-10-24 TW TW107137607A patent/TWI682393B/zh active
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