CN111344791B - 用于在非易失性存储器中存储多位数据的系统和方法 - Google Patents

用于在非易失性存储器中存储多位数据的系统和方法 Download PDF

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Publication number
CN111344791B
CN111344791B CN201880068646.XA CN201880068646A CN111344791B CN 111344791 B CN111344791 B CN 111344791B CN 201880068646 A CN201880068646 A CN 201880068646A CN 111344791 B CN111344791 B CN 111344791B
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read current
voltage
offset value
memory cell
memory cells
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Chinese (zh)
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CN111344791A (zh
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V·蒂瓦里
N·多
H·V·特兰
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Silicon Storage Technology Inc
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Silicon Storage Technology Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G11C16/0458—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates comprising two or more independent floating gates which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CN201880068646.XA 2017-11-03 2018-10-02 用于在非易失性存储器中存储多位数据的系统和方法 Active CN111344791B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762581489P 2017-11-03 2017-11-03
US62/581,489 2017-11-03
US16/148,304 US10515694B2 (en) 2017-11-03 2018-10-01 System and method for storing multibit data in non-volatile memory
US16/148,304 2018-10-01
PCT/US2018/053930 WO2019089168A1 (en) 2017-11-03 2018-10-02 System and method for storing multibit data in non-volatile memory

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CN111344791A CN111344791A (zh) 2020-06-26
CN111344791B true CN111344791B (zh) 2021-06-25

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US (1) US10515694B2 (enExample)
EP (1) EP3704700B1 (enExample)
JP (1) JP6970826B2 (enExample)
KR (1) KR102199607B1 (enExample)
CN (1) CN111344791B (enExample)
TW (1) TWI682393B (enExample)
WO (1) WO2019089168A1 (enExample)

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KR100671698B1 (ko) * 2004-08-05 2007-01-18 매그나칩 반도체 유한회사 엘디아이 내 디지털 아날로그 변환기의 테스트 장치
US11017866B2 (en) * 2019-09-03 2021-05-25 Silicon Storage Technology, Inc. Method of improving read current stability in analog non-volatile memory using final bake in predetermined program state
US11682459B2 (en) 2020-05-13 2023-06-20 Silicon Storage Technology, Inc. Analog neural memory array in artificial neural network comprising logical cells and improved programming mechanism
US12080355B2 (en) 2021-06-02 2024-09-03 Silicon Storage Technology, Inc. Method of improving read current stability in analog non-volatile memory by post-program tuning for memory cells exhibiting random telegraph noise
US11769558B2 (en) 2021-06-08 2023-09-26 Silicon Storage Technology, Inc. Method of reducing random telegraph noise in non-volatile memory by grouping and screening memory cells
KR102703459B1 (ko) 2021-11-29 2024-09-06 충남대학교 산학협력단 멀티 레벨 구동이 가능한 메모리 소자

Citations (1)

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CN105144296A (zh) * 2012-11-06 2015-12-09 桑迪士克技术有限公司 3d nand堆叠式非易失性存储器编程至导电状态

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JP2812202B2 (ja) * 1994-06-27 1998-10-22 ヤマハ株式会社 半導体記憶装置
KR100324594B1 (ko) 1999-06-28 2002-02-16 박종섭 강유전체 메모리 장치
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US7554856B2 (en) * 2006-10-06 2009-06-30 Qimonda Flash Gmbh & Co. Kg Memory cell
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JP2012209004A (ja) 2011-03-30 2012-10-25 Toshiba Corp 半導体記憶装置
KR102043723B1 (ko) 2013-02-28 2019-12-02 에스케이하이닉스 주식회사 반도체 장치 및 이를 포함하는 프로세서와 시스템
KR101716998B1 (ko) 2013-03-14 2017-03-15 실리콘 스토리지 테크놀로지 인크 비휘발성 메모리 프로그램 알고리즘 디바이스 및 방법
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Publication number Publication date
TW201931370A (zh) 2019-08-01
KR20200043501A (ko) 2020-04-27
EP3704700A4 (en) 2021-07-21
EP3704700B1 (en) 2022-07-20
US20190139602A1 (en) 2019-05-09
KR102199607B1 (ko) 2021-01-08
CN111344791A (zh) 2020-06-26
JP6970826B2 (ja) 2021-11-24
EP3704700A1 (en) 2020-09-09
US10515694B2 (en) 2019-12-24
WO2019089168A1 (en) 2019-05-09
TWI682393B (zh) 2020-01-11
JP2021501956A (ja) 2021-01-21

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