JP2012235125A - 酸化物層の形成方法及びそれを含む半導体素子の製造方法 - Google Patents
酸化物層の形成方法及びそれを含む半導体素子の製造方法 Download PDFInfo
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- JP2012235125A JP2012235125A JP2012104559A JP2012104559A JP2012235125A JP 2012235125 A JP2012235125 A JP 2012235125A JP 2012104559 A JP2012104559 A JP 2012104559A JP 2012104559 A JP2012104559 A JP 2012104559A JP 2012235125 A JP2012235125 A JP 2012235125A
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- SRLSISLWUNZOOB-UHFFFAOYSA-N ethyl(methyl)azanide;zirconium(4+) Chemical compound [Zr+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C SRLSISLWUNZOOB-UHFFFAOYSA-N 0.000 description 1
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- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
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- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
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- 230000000670 limiting effect Effects 0.000 description 1
- 239000006166 lysate Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
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- DAZXVJBJRMWXJP-UHFFFAOYSA-N n,n-dimethylethylamine Chemical compound CCN(C)C DAZXVJBJRMWXJP-UHFFFAOYSA-N 0.000 description 1
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- OWKFQWAGPHVFRF-UHFFFAOYSA-N n-(diethylaminosilyl)-n-ethylethanamine Chemical compound CCN(CC)[SiH2]N(CC)CC OWKFQWAGPHVFRF-UHFFFAOYSA-N 0.000 description 1
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 1
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- RYNPDCIPFXJJMD-UHFFFAOYSA-N n-bis[ethyl(methyl)amino]silyl-n-methylethanamine Chemical compound CCN(C)[SiH](N(C)CC)N(C)CC RYNPDCIPFXJJMD-UHFFFAOYSA-N 0.000 description 1
- GURMJCMOXLWZHZ-UHFFFAOYSA-N n-ethyl-n-[tris(diethylamino)silyl]ethanamine Chemical compound CCN(CC)[Si](N(CC)CC)(N(CC)CC)N(CC)CC GURMJCMOXLWZHZ-UHFFFAOYSA-N 0.000 description 1
- SSCVMVQLICADPI-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)silyl]methanamine Chemical compound CN(C)[Si](N(C)C)(N(C)C)N(C)C SSCVMVQLICADPI-UHFFFAOYSA-N 0.000 description 1
- MJBZMPMVOIEPQI-UHFFFAOYSA-N n-methyl-n-tris[ethyl(methyl)amino]silylethanamine Chemical compound CCN(C)[Si](N(C)CC)(N(C)CC)N(C)CC MJBZMPMVOIEPQI-UHFFFAOYSA-N 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000002097 pentamethylcyclopentadienyl group Chemical group 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-M phenolate Chemical compound [O-]C1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-M 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- JAMNHZBIQDNHMM-UHFFFAOYSA-N pivalonitrile Chemical compound CC(C)(C)C#N JAMNHZBIQDNHMM-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- OGHBATFHNDZKSO-UHFFFAOYSA-N propan-2-olate Chemical compound CC(C)[O-] OGHBATFHNDZKSO-UHFFFAOYSA-N 0.000 description 1
- JTQPTNQXCUMDRK-UHFFFAOYSA-N propan-2-olate;titanium(2+) Chemical compound CC(C)O[Ti]OC(C)C JTQPTNQXCUMDRK-UHFFFAOYSA-N 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 125000005374 siloxide group Chemical group 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- ZUHZGEOKBKGPSW-UHFFFAOYSA-N tetraglyme Chemical compound COCCOCCOCCOCCOC ZUHZGEOKBKGPSW-UHFFFAOYSA-N 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- GIRKRMUMWJFNRI-UHFFFAOYSA-N tris(dimethylamino)silicon Chemical compound CN(C)[Si](N(C)C)N(C)C GIRKRMUMWJFNRI-UHFFFAOYSA-N 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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Abstract
【解決手段】基板の表面に反応抑制作用基の層を形成する段階と、反応抑制作用基の層上に金属前駆体または半導体前駆体の層を形成する段階と、金属酸化物または半導体酸化物の層を得るために金属前駆体または半導体前駆体を酸化させる段階と、を含む酸化物層の形成方法を提供する。これにより、優秀な厚さ均一性を持つ酸化物層が形成でき、故に電気的特性の優秀な半導体素子を製造できる。
【選択図】図1
Description
<化学式1>
ML1L2L3Dx
<製造例>
12 反応チャンバ
16 基板移送装置
18 伝達チャンバ
20 ロードロックチャンバ
20’ アンロードロックチャンバ
101、210 基板
110、112 酸化物層
211 層間絶縁膜
212 コンタクトプラグ
213 エッチング阻止膜
214、215 モールド膜
232L 支持層
232P 支持層パターン
240 マスクパターン
H 開口部
220 第1電極
222 キャパシタ誘電膜
224 第2電極
Claims (10)
- 基板の表面に反応抑制作用基の層を形成する第1段階と、
前記反応抑制作用基の層上に第1物質の前駆体層を形成する第2段階と、
前記第1物質の酸化物の層を得るために前記第1物質の前駆体を酸化させる第3段階と、
を含む酸化物層の形成方法。 - 前記第1段階は、
前記基板上に前記反応抑制作用基を含む有機化合物を含む第1反応ガスを提供する段階と、
前記基板の表面に前記第1反応ガスを化学吸着させる段階と、
を含むことを特徴とする請求項1に記載の酸化物層の形成方法。 - 前記反応抑制作用基を含む有機化合物は、ヒドロキシ基を含む有機化合物であることを特徴とする請求項2に記載の酸化物層の形成方法。
- 前記基板の表面に形成された前記反応抑制作用基は、炭素数1ないし4のアルコキシ基、炭素数6ないし10のアリールオキシ基、炭素数1ないし5のエステル基、または炭素数7ないし10のアリールエステル基を含むことを特徴とする請求項2に記載の酸化物層の形成方法。
- 前記第1段階において、
前記基板の表面は、中心金属に結合された酸素ラジカルで終結されており、
前記中心金属と酸素ラジカルとの結合力は、シリコンと酸素ラジカルとの第1結合力、及びアルミニウムと酸素ラジカルとの第2結合力のうちいずれか一つより弱いことを特徴とする請求項1に記載の酸化物層の形成方法。 - 前記反応抑制作用基の層を形成する第1段階に先立って、前記基板の表面に反応活性要素の層を形成する段階をさらに含むことを特徴とする請求項1に記載の酸化物層の形成方法。
- 前記反応活性要素と前記基板との吸着強度は、前記反応活性要素と第3周期金属との結合強度より弱く、また前記反応活性要素と第3周期半導体との結合強度より弱いことを特徴とする請求項6に記載の酸化物層の形成方法。
- 基板の表面に反応活性要素の層を形成する段階と、
前記反応活性要素の層上に第1物質の酸化物層を形成する段階と、
前記第1物質の酸化物層上に第2物質の酸化物層を形成する段階と、
を含み、
前記第1物質は、第1金属または半導体を含み、
前記第1物質の酸化物層を形成する段階は、前記第1物質の前駆体層を形成する段階と、前記第1物質の前駆体層を酸化させる段階とを含み、
前記第2物質の酸化物層を形成する段階は、前記第1物質の酸化物層上に反応抑制作用基の層を形成する段階と、前記反応抑制作用基の層上に第2物質の前駆体層を形成する段階と、前記第2物質の前駆体層を酸化させる段階と、を含む酸化物層の形成方法。 - 前記第2物質は、第2金属または半導体を含むことを特徴とする請求項8に記載の酸化物層の形成方法。
- 前記第2金属はアルミニウム(Al)であることを特徴とする請求項9に記載の酸化物層の形成方法。
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KR101446335B1 (ko) * | 2008-07-10 | 2014-10-02 | 삼성전자주식회사 | 반도체 소자의 적층형 커패시터 제조방법 |
KR101576033B1 (ko) | 2008-08-19 | 2015-12-11 | 삼성전자주식회사 | 전구체 조성물, 박막 형성 방법, 이를 이용한 게이트 구조물의 제조 방법 및 커패시터의 제조 방법 |
KR20100026213A (ko) | 2008-08-29 | 2010-03-10 | 주식회사 하이닉스반도체 | 지르코늄산화막 제조방법 및 이를 이용한 캐패시터 제조방법 |
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US20140242811A1 (en) * | 2013-02-27 | 2014-08-28 | United Microelectronics Corp. | Atomic layer deposition method |
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JP2009509039A (ja) * | 2005-09-21 | 2009-03-05 | アプライド マテリアルズ インコーポレイテッド | バッチaldリアクタのための処理プロセス |
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JP7496634B2 (ja) | 2019-11-15 | 2024-06-07 | イージーティーエム カンパニー リミテッド | 表面保護物質を用いた薄膜形成方法 |
CN114929936A (zh) * | 2020-01-09 | 2022-08-19 | 株式会社Egtm | 利用表面保护物质的薄膜形成方法 |
JP7485403B2 (ja) | 2020-01-09 | 2024-05-16 | イージーティーエム カンパニー リミテッド | 表面保護物質を用いた薄膜形成方法 |
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KR20120122887A (ko) | 2012-11-07 |
KR101895398B1 (ko) | 2018-10-25 |
CN102760661B (zh) | 2016-08-03 |
DE102012103623A8 (de) | 2013-07-18 |
TWI541899B (zh) | 2016-07-11 |
JP6128750B2 (ja) | 2017-05-17 |
TW201248727A (en) | 2012-12-01 |
US9076647B2 (en) | 2015-07-07 |
CN102760661A (zh) | 2012-10-31 |
DE102012103623A1 (de) | 2012-10-31 |
US20120276721A1 (en) | 2012-11-01 |
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