JP2012212849A - Iii族窒化物半導体発光素子 - Google Patents
Iii族窒化物半導体発光素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 89
- 150000004767 nitrides Chemical class 0.000 title claims description 78
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims description 28
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- 229910000838 Al alloy Inorganic materials 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 abstract description 21
- 239000010980 sapphire Substances 0.000 abstract description 21
- 238000000605 extraction Methods 0.000 abstract description 15
- 239000010408 film Substances 0.000 description 172
- 239000010410 layer Substances 0.000 description 114
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000007789 sealing Methods 0.000 description 10
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 230000001902 propagating effect Effects 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- UPGUYPUREGXCCQ-UHFFFAOYSA-N cerium(3+) indium(3+) oxygen(2-) Chemical compound [O--].[O--].[O--].[In+3].[Ce+3] UPGUYPUREGXCCQ-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】平面視においてn電極17の配線状部17Bおよび、p電極18の配線状部18Bに重なる領域には、p型層13表面からn型層11に達する深さの溝14が設けられている。溝14の側面、底面、p型層13上、ITO電極15上に連続して、絶縁膜16が設けられている。絶縁膜16中であって、n電極17、p電極18の下側(サファイア基板10側)にあたる領域には、反射膜19が形成されている。そのうち、n電極17の配線状部17B、p電極18の配線状部18Bの下側にあたる領域の反射膜19は、発光層12よりも下側に位置している。n電極17、p電極18上は、絶縁膜22によって覆われている。絶縁膜22中であって、配線状部17B、18Bの上部にあたる領域には、反射膜23が埋め込まれている。反射膜23は、発光層12よりも下側に位置している。
【選択図】図1
Description
11:n型層
12:発光層
13:p型層
14:溝
15:ITO電極
16、22:絶縁膜
17、117:n電極
18、118:p電極
17A、18B:ボンディング部
17B、18B:配線状部
19、23、119:反射膜
20、21:孔
24:n側中間電極
25:p側中間電極
Claims (8)
- 成長基板上にn型層、発光層、p型層が順に積層され、ボンディング部と配線状部とを有したn電極およびp電極を有し、前記n電極および前記p電極が第1の絶縁膜上に形成され、前記n電極および前記p電極上は前記ボンディング部以外の領域が第2の絶縁膜に覆われたフェイスアップ型のIII 族窒化物半導体発光素子において、
前記n電極および前記p電極の下部にあたる領域の前記第1の絶縁膜中に、前記配線状部よりも発光波長における反射率の高い材料からなる反射膜を設け、
前記n電極側の配線状部の下部と前記p電極側の配線状部の下部の少なくとも一方に当たる領域は、p型層表面からn型層に至る深さの溝が形成され、
前記溝が形成された側の配線状部の下部にあたる領域の前記反射膜は、前記発光層よりも下部に位置する、
ことを特徴とするIII 族窒化物半導体発光素子。 - 成長基板上にn型層、発光層、p型層が順に積層され、ボンディング部と配線状部とを有したn電極およびp電極を有し、前記n電極および前記p電極が第1の絶縁膜上に形成され、前記n電極および前記p電極上は前記ボンディング部以外の領域が第2の絶縁膜に覆われたフェイスアップ型のIII 族窒化物半導体発光素子において、
前記n電極の配線状部の上部および前記p電極の配線状部の上部にあたる領域の前記第2の絶縁膜中に、前記配線状部よりも発光波長における反射率の高い材料からなる反射膜を設け、
前記n電極側の配線状部の下部と前記p電極側の配線状部の下部の少なくとも一方に当たる領域は、p型層表面からn型層に至る深さの溝が形成され、
前記溝が形成された側の配線状部の上部にあたる領域の前記反射膜は、前記発光層よりも下部に位置する、
ことを特徴とするIII 族窒化物半導体発光素子。 - 成長基板上にn型層、発光層、p型層が順に積層され、ボンディング部と配線状部とを有したn電極およびp電極を有し、前記n電極および前記p電極が第1の絶縁膜上に形成され、前記n電極および前記p電極上は前記ボンディング部以外の領域が第2の絶縁膜に覆われたフェイスアップ型のIII 族窒化物半導体発光素子において、
前記n電極および前記p電極の下部にあたる領域の前記第1の絶縁膜中と、前記n電極の配線状部の上部および前記p電極の配線状部の上部にあたる領域の前記第2の絶縁膜中に、前記配線状部よりも発光波長における反射率の高い材料からなる反射膜を設け、
前記n電極側の配線状部の下部と前記p電極側の配線状部の下部の少なくとも一方に当たる領域は、p型層表面からn型層に至る深さの溝が形成され、
前記溝が形成された側の配線状部の上部および下部にあたる領域の前記反射膜は、前記発光層よりも下部に位置する、
ことを特徴とするIII 族窒化物半導体発光素子。 - 前記配線状部の下部に位置する反射膜は、前記溝の底面に露出したn型層上に直接接して設けられている、ことを特徴とする請求項1または3に記載のIII 族窒化物半導体発光素子。
- 前記反射膜は、Ag、Al、Ag合金、Al合金、または誘電体多層膜からなることを特徴とする請求項1ないし請求項4のいずれか1項に記載のIII 族窒化物半導体発光素子。
- 成長基板上にn型層、発光層、p型層が順に積層され、ボンディング部と配線状部とを有したn電極およびp電極を有し、前記n電極および前記p電極が第1の絶縁膜上に形成されたフェイスアップ型のIII 族窒化物半導体発光素子において、
前記n電極側の配線状部の下部と前記p電極側の配線状部の下部の少なくとも一方に当たる領域は、p型層表面からn型層に至る深さの溝が形成され、
前記溝により、前記配線状部が前記発光層よりも下部に位置し、
前記n電極および前記p電極は、Ag、Al、Ag合金、またはAl合金からなる、
ことを特徴とするIII 族窒化物半導体発光素子。 - 前記溝は、前記n電極側の配線状部の下部にあたる領域に設けられる、ことを特徴とする請求項1ないし請求項6のいずれか1項に記載のIII 族窒化物半導体発光素子。
- 前記溝は、前記n電極側の配線状部の下部と前記p電極側の配線状部の下部の両方に設けられる、ことを特徴とする請求項1ないし請求項7のいずれか1項に記載のIII 族窒化物半導体発光素子。
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JP2011235687A JP5541261B2 (ja) | 2011-03-23 | 2011-10-27 | Iii族窒化物半導体発光素子 |
CN201210076740.4A CN102694112B (zh) | 2011-03-23 | 2012-03-21 | 第iii族氮化物半导体发光器件 |
US13/426,534 US8912559B2 (en) | 2011-03-23 | 2012-03-21 | Group III nitride semiconductor light-emitting device |
US14/556,886 US9515228B2 (en) | 2011-03-23 | 2014-12-01 | Group III nitride semiconductor light-emitting device |
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Cited By (7)
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JP2014216470A (ja) * | 2013-04-25 | 2014-11-17 | スタンレー電気株式会社 | 半導体発光素子 |
JP2015060886A (ja) * | 2013-09-17 | 2015-03-30 | 豊田合成株式会社 | Iii族窒化物半導体発光素子 |
KR20150072344A (ko) * | 2013-12-19 | 2015-06-29 | 니치아 카가쿠 고교 가부시키가이샤 | 반도체 발광 소자 |
JP2017059645A (ja) * | 2015-09-15 | 2017-03-23 | 株式会社東芝 | 半導体発光素子 |
JP2018529230A (ja) * | 2015-08-25 | 2018-10-04 | エルジー イノテック カンパニー リミテッド | 発光素子およびこれを含む発光素子パッケージ |
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JP2019195050A (ja) * | 2018-04-26 | 2019-11-07 | 日亜化学工業株式会社 | 発光素子 |
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US9515228B2 (en) | 2016-12-06 |
CN102694112A (zh) | 2012-09-26 |
US20120241720A1 (en) | 2012-09-27 |
US8912559B2 (en) | 2014-12-16 |
CN102694112B (zh) | 2015-01-28 |
JP5541261B2 (ja) | 2014-07-09 |
US20150083997A1 (en) | 2015-03-26 |
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