JP2012178602A - チャネル領域の平滑な表面を有するシリコンカーバイドデバイスを作製する方法 - Google Patents
チャネル領域の平滑な表面を有するシリコンカーバイドデバイスを作製する方法 Download PDFInfo
- Publication number
- JP2012178602A JP2012178602A JP2012111459A JP2012111459A JP2012178602A JP 2012178602 A JP2012178602 A JP 2012178602A JP 2012111459 A JP2012111459 A JP 2012111459A JP 2012111459 A JP2012111459 A JP 2012111459A JP 2012178602 A JP2012178602 A JP 2012178602A
- Authority
- JP
- Japan
- Prior art keywords
- region
- silicon carbide
- type
- layer
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 145
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 132
- 238000000034 method Methods 0.000 title claims abstract description 37
- 230000003746 surface roughness Effects 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000002019 doping agent Substances 0.000 claims description 23
- 230000009467 reduction Effects 0.000 abstract description 10
- 108091006146 Channels Proteins 0.000 description 63
- 230000008569 process Effects 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 12
- 238000002513 implantation Methods 0.000 description 11
- 230000005669 field effect Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 239000007943 implant Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0886—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Abstract
【解決手段】n”シリコンカーバイド層が、シリコンカーバイド基板上に設けられる。p型シリコンカーバイドウェル領域が、nシリコンカーバイド層上に設けられる。p+シリコンカーバイドの埋込み領域が、p型シリコンカーバイドウェル領域に設けられる。シリコンカーバイドのn+領域が、p+シリコンカーバイドの埋込み領域上に設けられる。パワーデバイスのチャネル領域が、p+シリコンカーバイドの埋込み領域とシリコンカーバイドのn+領域に隣接する。n”領域は、チャネル領域上に設けられ、&領域の一部分が除去され、それにより、n”領域の一部分が、チャネル領域上に残って、チャネル領域の表面粗さの低減をもたらす。
【選択図】図1
Description
Claims (1)
- シリコンカーバイドパワーデバイスを形成する方法であって、
シリコンカーバイド基板上にn−シリコンカーバイド層を形成するステップ、
前記n−シリコンカーバイド層上にp型シリコンカーバイドウェル領域を形成するために、前記n−シリコンカーバイド層内にp型ドーパントを注入するステップ、または、前記n−シリコンカーバイド層上にp型エピタキシャル層を形成するステップ、
前記p型シリコンカーバイドウェル領域内にp+シリコンカーバイドの埋込み領域を形成するために、前記p型シリコンカーバイドウェル領域内にp型ドーパントを注入するステップ、
前記p+シリコンカーバイドの埋込み領域上にシリコンカーバイドのn+領域を形成するために、前記p+シリコンカーバイドの埋込み領域上の前記p型シリコンカーバイドウェル領域内にn型ドーパントを注入するステップであって、前記パワーデバイスのチャネル領域が、前記シリコンカーバイドのp+およびn+領域に隣接する、n型ドーパントを注入するステップ、
前記チャネル領域上にn−領域を形成するステップ、および、
前記チャネル領域から前記n−領域の一部分を除去するステップであって、それにより、前記n−領域の一部分が、前記チャネル領域上に残って、前記チャネル領域の表面粗さを低減する、除去するステップを含むことを特徴とする方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/136,057 US7528040B2 (en) | 2005-05-24 | 2005-05-24 | Methods of fabricating silicon carbide devices having smooth channels |
US11/136,057 | 2005-05-24 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008513462A Division JP5199072B2 (ja) | 2005-05-24 | 2006-03-16 | チャネル領域の平滑な表面を有するシリコンカーバイドデバイスを作製する方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012178602A true JP2012178602A (ja) | 2012-09-13 |
JP6008571B2 JP6008571B2 (ja) | 2016-10-19 |
Family
ID=36753949
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008513462A Active JP5199072B2 (ja) | 2005-05-24 | 2006-03-16 | チャネル領域の平滑な表面を有するシリコンカーバイドデバイスを作製する方法 |
JP2012111459A Active JP6008571B2 (ja) | 2005-05-24 | 2012-05-15 | チャネル領域の平滑な表面を有するシリコンカーバイドデバイスを作製する方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008513462A Active JP5199072B2 (ja) | 2005-05-24 | 2006-03-16 | チャネル領域の平滑な表面を有するシリコンカーバイドデバイスを作製する方法 |
Country Status (5)
Country | Link |
---|---|
US (4) | US7528040B2 (ja) |
EP (2) | EP2325869B1 (ja) |
JP (2) | JP5199072B2 (ja) |
TW (2) | TWI545640B (ja) |
WO (1) | WO2006127093A2 (ja) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7569900B2 (en) * | 2004-11-16 | 2009-08-04 | Kabushiki Kaisha Toshiba | Silicon carbide high breakdown voltage semiconductor device |
JP5011493B2 (ja) * | 2005-09-14 | 2012-08-29 | 関西電力株式会社 | 炭化珪素半導体素子の製造方法 |
JP5306193B2 (ja) * | 2006-06-29 | 2013-10-02 | クリー インコーポレイテッド | p型チャネルを含む炭化シリコンスイッチングデバイスおよびその形成方法 |
US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
US8272781B2 (en) * | 2006-08-01 | 2012-09-25 | Intel Corporation | Dynamic power control of a memory device thermal sensor |
US7728402B2 (en) * | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
KR101529331B1 (ko) * | 2006-08-17 | 2015-06-16 | 크리 인코포레이티드 | 고전력 절연 게이트 바이폴라 트랜지스터 |
JP5071763B2 (ja) * | 2006-10-16 | 2012-11-14 | 独立行政法人産業技術総合研究所 | 炭化ケイ素半導体装置およびその製造方法 |
US7781312B2 (en) * | 2006-12-13 | 2010-08-24 | General Electric Company | Silicon carbide devices and method of making |
US8835987B2 (en) * | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
JP4700045B2 (ja) * | 2007-11-13 | 2011-06-15 | Okiセミコンダクタ株式会社 | 半導体素子の製造方法 |
US7795691B2 (en) * | 2008-01-25 | 2010-09-14 | Cree, Inc. | Semiconductor transistor with P type re-grown channel layer |
TWI364798B (en) * | 2008-03-21 | 2012-05-21 | Vanguard Int Semiconduct Corp | Semiconductor device and fabrication method thereof |
US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
US8294507B2 (en) | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
US8629509B2 (en) * | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
US8541787B2 (en) * | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
US8367536B2 (en) * | 2009-07-24 | 2013-02-05 | Mitsubishi Electric Corporation | Method for manufacturing silicon carbide semiconductor device |
US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
CN103918079B (zh) | 2011-09-11 | 2017-10-31 | 科锐 | 包括具有改进布局的晶体管的高电流密度功率模块 |
US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
DE102013010187A1 (de) | 2012-06-27 | 2014-01-02 | Fairchild Semiconductor Corp. | Schottky-Barriere-Vorrichtung mit lokal planarisierter Oberfläche und zugehöriges Halbleitererzeugnis |
JP5961563B2 (ja) * | 2013-01-25 | 2016-08-02 | 株式会社豊田中央研究所 | 半導体装置の製造方法 |
JP2015041644A (ja) * | 2013-08-20 | 2015-03-02 | 富士電機株式会社 | Mos型半導体装置の製造方法 |
JP6347188B2 (ja) * | 2014-09-08 | 2018-06-27 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
US9685550B2 (en) * | 2014-12-26 | 2017-06-20 | Fairchild Semiconductor Corporation | Silicon carbide (SiC) device with improved gate dielectric shielding |
WO2017094764A1 (ja) | 2015-12-02 | 2017-06-08 | 三菱電機株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置 |
JP6237845B1 (ja) * | 2016-08-24 | 2017-11-29 | 富士電機株式会社 | 縦型mosfetおよび縦型mosfetの製造方法 |
EP3358626B1 (en) * | 2017-02-02 | 2022-07-20 | Nxp B.V. | Method of making a semiconductor switch device |
CN107331621A (zh) * | 2017-07-14 | 2017-11-07 | 欧阳慧琳 | 一种垂直双扩散场效应晶体管及其制作方法 |
CN110718452A (zh) | 2018-07-12 | 2020-01-21 | 创能动力科技有限公司 | 碳化硅器件及其制造方法 |
CN113381599B (zh) * | 2021-06-29 | 2022-11-29 | 哈尔滨工业大学 | 一种并联SiC MOSFET安全工作域计算方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58175872A (ja) * | 1982-04-08 | 1983-10-15 | Toshiba Corp | 絶縁ゲ−ト電界効果トランジスタ |
JPS63132481A (ja) * | 1986-11-22 | 1988-06-04 | Toshiba Corp | 電界効果トランジスタの製造方法 |
JPH07176504A (ja) * | 1993-12-17 | 1995-07-14 | Toshiba Corp | 半導体装置の製造方法 |
JP2002270838A (ja) * | 2001-03-12 | 2002-09-20 | Denso Corp | 炭化珪素半導体装置及びその製造方法 |
JP2003234301A (ja) * | 2001-10-25 | 2003-08-22 | Matsushita Electric Ind Co Ltd | 半導体基板、半導体素子及びその製造方法 |
WO2004061974A2 (en) * | 2002-12-20 | 2004-07-22 | Cree, Inc. | Silicon carbide power mos field effect transistors and manufacturing methods |
JP2004537162A (ja) * | 2001-04-11 | 2004-12-09 | シリコン・セミコンダクター・コーポレイション | パワーデバイスとその製造方法 |
US20050020084A1 (en) * | 2003-07-23 | 2005-01-27 | Claire Richtarch | Method of preparing a surface of a semiconductor wafer to make it epiready |
JP2005116896A (ja) * | 2003-10-09 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
Family Cites Families (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3629011A (en) | 1967-09-11 | 1971-12-21 | Matsushita Electric Ind Co Ltd | Method for diffusing an impurity substance into silicon carbide |
US4466172A (en) | 1979-01-08 | 1984-08-21 | American Microsystems, Inc. | Method for fabricating MOS device with self-aligned contacts |
US4779126A (en) | 1983-11-25 | 1988-10-18 | International Rectifier Corporation | Optically triggered lateral thyristor with auxiliary region |
US4811065A (en) | 1987-06-11 | 1989-03-07 | Siliconix Incorporated | Power DMOS transistor with high speed body diode |
JPH01117363A (ja) | 1987-10-30 | 1989-05-10 | Nec Corp | 縦型絶縁ゲート電界効果トランジスタ |
US5111253A (en) | 1989-05-09 | 1992-05-05 | General Electric Company | Multicellular FET having a Schottky diode merged therewith |
JPH0766971B2 (ja) | 1989-06-07 | 1995-07-19 | シャープ株式会社 | 炭化珪素半導体装置 |
JPH0334466A (ja) | 1989-06-30 | 1991-02-14 | Nippon Telegr & Teleph Corp <Ntt> | 縦形二重拡散mosfet |
JPH03157974A (ja) | 1989-11-15 | 1991-07-05 | Nec Corp | 縦型電界効果トランジスタ |
JP2542448B2 (ja) | 1990-05-24 | 1996-10-09 | シャープ株式会社 | 電界効果トランジスタおよびその製造方法 |
US5270554A (en) | 1991-06-14 | 1993-12-14 | Cree Research, Inc. | High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide |
US5242841A (en) | 1992-03-25 | 1993-09-07 | Texas Instruments Incorporated | Method of making LDMOS transistor with self-aligned source/backgate and photo-aligned gate |
US5459107A (en) | 1992-06-05 | 1995-10-17 | Cree Research, Inc. | Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
US5629531A (en) | 1992-06-05 | 1997-05-13 | Cree Research, Inc. | Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures |
US6344663B1 (en) | 1992-06-05 | 2002-02-05 | Cree, Inc. | Silicon carbide CMOS devices |
US5726463A (en) | 1992-08-07 | 1998-03-10 | General Electric Company | Silicon carbide MOSFET having self-aligned gate structure |
JP3146694B2 (ja) | 1992-11-12 | 2001-03-19 | 富士電機株式会社 | 炭化けい素mosfetおよび炭化けい素mosfetの製造方法 |
US5506421A (en) | 1992-11-24 | 1996-04-09 | Cree Research, Inc. | Power MOSFET in silicon carbide |
JPH0799312A (ja) | 1993-02-22 | 1995-04-11 | Texas Instr Inc <Ti> | 半導体装置とその製法 |
US5539217A (en) | 1993-08-09 | 1996-07-23 | Cree Research, Inc. | Silicon carbide thyristor |
US6162665A (en) | 1993-10-15 | 2000-12-19 | Ixys Corporation | High voltage transistors and thyristors |
US5510630A (en) | 1993-10-18 | 1996-04-23 | Westinghouse Electric Corporation | Non-volatile random access memory cell constructed of silicon carbide |
US5396085A (en) | 1993-12-28 | 1995-03-07 | North Carolina State University | Silicon carbide switching device with rectifying-gate |
US5385855A (en) | 1994-02-24 | 1995-01-31 | General Electric Company | Fabrication of silicon carbide integrated circuits |
JPH08213607A (ja) | 1995-02-08 | 1996-08-20 | Ngk Insulators Ltd | 半導体装置およびその製造方法 |
US5510281A (en) | 1995-03-20 | 1996-04-23 | General Electric Company | Method of fabricating a self-aligned DMOS transistor device using SiC and spacers |
JP3521246B2 (ja) | 1995-03-27 | 2004-04-19 | 沖電気工業株式会社 | 電界効果トランジスタおよびその製造方法 |
SE9501310D0 (sv) | 1995-04-10 | 1995-04-10 | Abb Research Ltd | A method for introduction of an impurity dopant in SiC, a semiconductor device formed by the mehtod and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC |
US5734180A (en) | 1995-06-02 | 1998-03-31 | Texas Instruments Incorporated | High-performance high-voltage device structures |
US5967795A (en) | 1995-08-30 | 1999-10-19 | Asea Brown Boveri Ab | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
JPH11261061A (ja) | 1998-03-11 | 1999-09-24 | Denso Corp | 炭化珪素半導体装置及びその製造方法 |
US6573534B1 (en) | 1995-09-06 | 2003-06-03 | Denso Corporation | Silicon carbide semiconductor device |
KR100199997B1 (ko) | 1995-09-06 | 1999-07-01 | 오카메 히로무 | 탄화규소 반도체장치 |
JP3385938B2 (ja) * | 1997-03-05 | 2003-03-10 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
US5972801A (en) | 1995-11-08 | 1999-10-26 | Cree Research, Inc. | Process for reducing defects in oxide layers on silicon carbide |
US6133587A (en) | 1996-01-23 | 2000-10-17 | Denso Corporation | Silicon carbide semiconductor device and process for manufacturing same |
JPH09205202A (ja) | 1996-01-26 | 1997-08-05 | Matsushita Electric Works Ltd | 半導体装置 |
US5663580A (en) | 1996-03-15 | 1997-09-02 | Abb Research Ltd. | Optically triggered semiconductor device |
SE9601174D0 (sv) | 1996-03-27 | 1996-03-27 | Abb Research Ltd | A method for producing a semiconductor device having a semiconductor layer of SiC and such a device |
TW350621U (en) | 1996-04-15 | 1999-01-11 | Rohm Co Ltd | Image sensor chip, method for manufacturing the same, and image sensor |
US5763905A (en) | 1996-07-09 | 1998-06-09 | Abb Research Ltd. | Semiconductor device having a passivation layer |
SE9602745D0 (sv) | 1996-07-11 | 1996-07-11 | Abb Research Ltd | A method for producing a channel region layer in a SiC-layer for a voltage controlled semiconductor device |
US6002159A (en) | 1996-07-16 | 1999-12-14 | Abb Research Ltd. | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
US5917203A (en) | 1996-07-29 | 1999-06-29 | Motorola, Inc. | Lateral gate vertical drift region transistor |
US5837572A (en) | 1997-01-10 | 1998-11-17 | Advanced Micro Devices, Inc. | CMOS integrated circuit formed by using removable spacers to produce asymmetrical NMOS junctions before asymmetrical PMOS junctions for optimizing thermal diffusivity of dopants implanted therein |
US6180958B1 (en) | 1997-02-07 | 2001-01-30 | James Albert Cooper, Jr. | Structure for increasing the maximum voltage of silicon carbide power transistors |
JP3206727B2 (ja) | 1997-02-20 | 2001-09-10 | 富士電機株式会社 | 炭化けい素縦型mosfetおよびその製造方法 |
DE19809554B4 (de) | 1997-03-05 | 2008-04-03 | Denso Corp., Kariya | Siliziumkarbidhalbleitervorrichtung |
US5877041A (en) | 1997-06-30 | 1999-03-02 | Harris Corporation | Self-aligned power field effect transistor in silicon carbide |
DE19832329A1 (de) | 1997-07-31 | 1999-02-04 | Siemens Ag | Verfahren zur Strukturierung von Halbleitern mit hoher Präzision, guter Homogenität und Reproduzierbarkeit |
US5976801A (en) * | 1997-08-08 | 1999-11-02 | Incyte Pharamceuticals, Inc. | Human reticulocalbin isoforms |
JP3180895B2 (ja) | 1997-08-18 | 2001-06-25 | 富士電機株式会社 | 炭化けい素半導体装置の製造方法 |
CN1267397A (zh) | 1997-08-20 | 2000-09-20 | 西门子公司 | 具有预定的α碳化硅区的半导体结构及此半导体结构的应用 |
US6239463B1 (en) | 1997-08-28 | 2001-05-29 | Siliconix Incorporated | Low resistance power MOSFET or other device containing silicon-germanium layer |
SE9704150D0 (sv) | 1997-11-13 | 1997-11-13 | Abb Research Ltd | Semiconductor device of SiC with insulating layer a refractory metal nitride layer |
JPH11191559A (ja) | 1997-12-26 | 1999-07-13 | Matsushita Electric Works Ltd | Mosfetの製造方法 |
JPH11251592A (ja) | 1998-01-05 | 1999-09-07 | Denso Corp | 炭化珪素半導体装置 |
JP3216804B2 (ja) | 1998-01-06 | 2001-10-09 | 富士電機株式会社 | 炭化けい素縦形fetの製造方法および炭化けい素縦形fet |
JPH11266017A (ja) | 1998-01-14 | 1999-09-28 | Denso Corp | 炭化珪素半導体装置及びその製造方法 |
JPH11238742A (ja) | 1998-02-23 | 1999-08-31 | Denso Corp | 炭化珪素半導体装置の製造方法 |
JP3893725B2 (ja) | 1998-03-25 | 2007-03-14 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
US6107142A (en) | 1998-06-08 | 2000-08-22 | Cree Research, Inc. | Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion |
US6100169A (en) | 1998-06-08 | 2000-08-08 | Cree, Inc. | Methods of fabricating silicon carbide power devices by controlled annealing |
JP4123636B2 (ja) | 1998-06-22 | 2008-07-23 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
JP3959856B2 (ja) | 1998-07-31 | 2007-08-15 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
US6221700B1 (en) | 1998-07-31 | 2001-04-24 | Denso Corporation | Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities |
JP2000106371A (ja) | 1998-07-31 | 2000-04-11 | Denso Corp | 炭化珪素半導体装置の製造方法 |
US6246076B1 (en) | 1998-08-28 | 2001-06-12 | Cree, Inc. | Layered dielectric on silicon carbide semiconductor structures |
JP4186337B2 (ja) | 1998-09-30 | 2008-11-26 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
US6228720B1 (en) | 1999-02-23 | 2001-05-08 | Matsushita Electric Industrial Co., Ltd. | Method for making insulated-gate semiconductor element |
US6399996B1 (en) | 1999-04-01 | 2002-06-04 | Apd Semiconductor, Inc. | Schottky diode having increased active surface area and method of fabrication |
US6448160B1 (en) | 1999-04-01 | 2002-09-10 | Apd Semiconductor, Inc. | Method of fabricating power rectifier device to vary operating parameters and resulting device |
US6420225B1 (en) | 1999-04-01 | 2002-07-16 | Apd Semiconductor, Inc. | Method of fabricating power rectifier device |
US6238967B1 (en) | 1999-04-12 | 2001-05-29 | Motorola, Inc. | Method of forming embedded DRAM structure |
US6137139A (en) | 1999-06-03 | 2000-10-24 | Intersil Corporation | Low voltage dual-well MOS device having high ruggedness, low on-resistance, and improved body diode reverse recovery |
JP4192353B2 (ja) | 1999-09-21 | 2008-12-10 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
US6303508B1 (en) | 1999-12-16 | 2001-10-16 | Philips Electronics North America Corporation | Superior silicon carbide integrated circuits and method of fabricating |
US6429041B1 (en) | 2000-07-13 | 2002-08-06 | Cree, Inc. | Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation |
DE10036208B4 (de) | 2000-07-25 | 2007-04-19 | Siced Electronics Development Gmbh & Co. Kg | Halbleiteraufbau mit vergrabenem Inselgebiet und Konaktgebiet |
JP2003158075A (ja) * | 2001-08-23 | 2003-05-30 | Sumitomo Mitsubishi Silicon Corp | 半導体基板の製造方法及び電界効果型トランジスタの製造方法並びに半導体基板及び電界効果型トランジスタ |
US6956238B2 (en) | 2000-10-03 | 2005-10-18 | Cree, Inc. | Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel |
US6767843B2 (en) | 2000-10-03 | 2004-07-27 | Cree, Inc. | Method of N2O growth of an oxide layer on a silicon carbide layer |
US6610366B2 (en) | 2000-10-03 | 2003-08-26 | Cree, Inc. | Method of N2O annealing an oxide layer on a silicon carbide layer |
US7067176B2 (en) | 2000-10-03 | 2006-06-27 | Cree, Inc. | Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment |
US6593620B1 (en) | 2000-10-06 | 2003-07-15 | General Semiconductor, Inc. | Trench DMOS transistor with embedded trench schottky rectifier |
US6958508B2 (en) | 2000-10-17 | 2005-10-25 | Matsushita Electric Industrial Co., Ltd. | Ferroelectric memory having ferroelectric capacitor insulative film |
EP1204145B1 (en) | 2000-10-23 | 2011-12-28 | Panasonic Corporation | Semiconductor element |
JP3881840B2 (ja) | 2000-11-14 | 2007-02-14 | 独立行政法人産業技術総合研究所 | 半導体装置 |
DE10214150B4 (de) | 2001-03-30 | 2009-06-18 | Denso Corporation, Kariya | Siliziumkarbidhalbleitervorrichtung und Verfahren zur Herstellung derselben |
JP3908128B2 (ja) | 2001-09-07 | 2007-04-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
EP1306890A2 (en) | 2001-10-25 | 2003-05-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor substrate and device comprising SiC and method for fabricating the same |
SE520968C2 (sv) | 2001-10-29 | 2003-09-16 | Okmetic Oyj | Högresistiv monokristallin kiselkarbid och metod för dess framställning |
US7074643B2 (en) | 2003-04-24 | 2006-07-11 | Cree, Inc. | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
EP1471168B2 (en) | 2003-04-24 | 2011-08-10 | Norstel AB | Device and method for producing single crystals by vapour deposition |
US6979863B2 (en) | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
US7247513B2 (en) | 2003-05-08 | 2007-07-24 | Caracal, Inc. | Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide |
JP3784393B2 (ja) * | 2003-07-02 | 2006-06-07 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
US7473929B2 (en) | 2003-07-02 | 2009-01-06 | Panasonic Corporation | Semiconductor device and method for fabricating the same |
US7118970B2 (en) | 2004-06-22 | 2006-10-10 | Cree, Inc. | Methods of fabricating silicon carbide devices with hybrid well regions |
JP4500928B2 (ja) | 2004-10-25 | 2010-07-14 | アルプス電気株式会社 | 金型の製造方法 |
-
2005
- 2005-05-24 US US11/136,057 patent/US7528040B2/en active Active
-
2006
- 2006-03-16 EP EP10196317.1A patent/EP2325869B1/en active Active
- 2006-03-16 JP JP2008513462A patent/JP5199072B2/ja active Active
- 2006-03-16 TW TW101149631A patent/TWI545640B/zh active
- 2006-03-16 TW TW095109031A patent/TWI404131B/zh active
- 2006-03-16 EP EP06738542.7A patent/EP1883951B1/en active Active
- 2006-03-16 WO PCT/US2006/009493 patent/WO2006127093A2/en active Application Filing
-
2009
- 2009-04-16 US US12/424,960 patent/US8188483B2/en active Active
-
2012
- 2012-05-14 US US13/470,600 patent/US8859366B2/en active Active
- 2012-05-15 JP JP2012111459A patent/JP6008571B2/ja active Active
-
2014
- 2014-09-10 US US14/482,137 patent/US9142663B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58175872A (ja) * | 1982-04-08 | 1983-10-15 | Toshiba Corp | 絶縁ゲ−ト電界効果トランジスタ |
JPS63132481A (ja) * | 1986-11-22 | 1988-06-04 | Toshiba Corp | 電界効果トランジスタの製造方法 |
JPH07176504A (ja) * | 1993-12-17 | 1995-07-14 | Toshiba Corp | 半導体装置の製造方法 |
JP2002270838A (ja) * | 2001-03-12 | 2002-09-20 | Denso Corp | 炭化珪素半導体装置及びその製造方法 |
JP2004537162A (ja) * | 2001-04-11 | 2004-12-09 | シリコン・セミコンダクター・コーポレイション | パワーデバイスとその製造方法 |
JP2003234301A (ja) * | 2001-10-25 | 2003-08-22 | Matsushita Electric Ind Co Ltd | 半導体基板、半導体素子及びその製造方法 |
WO2004061974A2 (en) * | 2002-12-20 | 2004-07-22 | Cree, Inc. | Silicon carbide power mos field effect transistors and manufacturing methods |
US20050020084A1 (en) * | 2003-07-23 | 2005-01-27 | Claire Richtarch | Method of preparing a surface of a semiconductor wafer to make it epiready |
JP2005116896A (ja) * | 2003-10-09 | 2005-04-28 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201314760A (zh) | 2013-04-01 |
US8859366B2 (en) | 2014-10-14 |
JP2008543048A (ja) | 2008-11-27 |
TW200701358A (en) | 2007-01-01 |
JP5199072B2 (ja) | 2013-05-15 |
WO2006127093A3 (en) | 2007-05-10 |
US20090261351A1 (en) | 2009-10-22 |
TWI404131B (zh) | 2013-08-01 |
US20120228638A1 (en) | 2012-09-13 |
EP2325869A2 (en) | 2011-05-25 |
EP2325869B1 (en) | 2020-01-01 |
US20150028354A1 (en) | 2015-01-29 |
EP1883951A2 (en) | 2008-02-06 |
US7528040B2 (en) | 2009-05-05 |
US20060270103A1 (en) | 2006-11-30 |
US8188483B2 (en) | 2012-05-29 |
US9142663B2 (en) | 2015-09-22 |
TWI545640B (zh) | 2016-08-11 |
WO2006127093A2 (en) | 2006-11-30 |
EP1883951B1 (en) | 2019-10-16 |
EP2325869A3 (en) | 2012-01-25 |
JP6008571B2 (ja) | 2016-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5199072B2 (ja) | チャネル領域の平滑な表面を有するシリコンカーバイドデバイスを作製する方法 | |
US7705362B2 (en) | Silicon carbide devices with hybrid well regions | |
US6429041B1 (en) | Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation | |
JP3180895B2 (ja) | 炭化けい素半導体装置の製造方法 | |
US7687825B2 (en) | Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabrication | |
KR100271106B1 (ko) | 실리콘 카바이드로 형성된 파워 mosfet(power mosfet in silicon carbide) | |
US9552997B2 (en) | Silicon carbide switching devices including P-type channels | |
JP3502371B2 (ja) | 半導体素子 | |
JP3941641B2 (ja) | 炭化珪素半導体装置の製造方法とその製造方法によって製造される炭化珪素半導体装置 | |
JP7074173B2 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2005353877A (ja) | 半導体装置 | |
WO2015111177A1 (ja) | 半導体装置,パワーモジュール,電力変換装置,および鉄道車両 | |
JPH11354789A (ja) | 電界効果トランジスタ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120613 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120613 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140114 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140414 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140417 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140514 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140519 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140616 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140619 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140714 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141205 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150305 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150406 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150507 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150605 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160303 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160603 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160803 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160825 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160913 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6008571 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |