JP2012178553A - キャパシタおよび半導体装置 - Google Patents
キャパシタおよび半導体装置 Download PDFInfo
- Publication number
- JP2012178553A JP2012178553A JP2012019405A JP2012019405A JP2012178553A JP 2012178553 A JP2012178553 A JP 2012178553A JP 2012019405 A JP2012019405 A JP 2012019405A JP 2012019405 A JP2012019405 A JP 2012019405A JP 2012178553 A JP2012178553 A JP 2012178553A
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- work function
- capacitor
- dielectric
- oxide
- insulator
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 137
- 239000003990 capacitor Substances 0.000 title claims abstract description 80
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 34
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052738 indium Inorganic materials 0.000 claims abstract description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 21
- 239000011701 zinc Substances 0.000 claims abstract description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052718 tin Inorganic materials 0.000 claims abstract description 12
- 239000012212 insulator Substances 0.000 claims description 66
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000011135 tin Substances 0.000 claims description 8
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
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- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 5
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 2
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- 239000000969 carrier Substances 0.000 description 7
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- 238000000231 atomic layer deposition Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052984 zinc sulfide Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
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- 239000000126 substance Substances 0.000 description 5
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- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical group [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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- H10B—ELECTRONIC MEMORY DEVICES
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- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
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- H10B—ELECTRONIC MEMORY DEVICES
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- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
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- H10B12/48—Data lines or contacts therefor
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- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
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- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
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Abstract
【解決手段】誘電体の一つの面に接して設けられた、インジウム、錫あるいは亜鉛の少なくとも一つと窒素とを有する仕事関数が5.0電子ボルト以上、好ましくは5.5電子ボルト以上のn型半導体による電極を有するキャパシタである。電極の仕事関数が高いため、誘電体のポテンシャル障壁が高くなり、誘電体が10nm以下と薄くても十分な絶縁性を保てる。特に、誘電体が、high−k材料である場合に顕著な効果が認められる。
【選択図】図2
Description
図1(A)乃至図1(C)、図2(A)乃至図2(C)及び図4(A)乃至図4(D)に、本実施の形態の半導体装置(スタック型キャパシタを有するDRAM)を作製する工程例を図示する。なお、特に断らない限り、用いる材料、方法等は公知の半導体集積回路作製技術を参照すればよい。
公知の半導体集積回路作製技術により、単結晶シリコン等の基板101上に、第1の絶縁物102、ワード線103aおよび103b、第1コンタクトプラグ104、ビット線105、第2コンタクトプラグ106を形成する。第1の絶縁物は素子分離絶縁物として機能する。
酸化シリコンの第2の絶縁物107を形成して、これにキャパシタを形成するための孔108を設ける。なお、孔108の内面に厚さ2nm乃至5nmの酸化窒化シリコン膜(酸素/窒素=0.2〜0.8)を形成すると、後述する第1の高仕事関数化合物半導体層109との密着性を向上できる。
孔108の内面に厚さ2nm乃至5nmの第1の高仕事関数化合物半導体層109を形成する。第1の高仕事関数化合物半導体層109は厚さが2nm未満では、導電性が不十分であるため好ましくない。また、第1の高仕事関数化合物半導体層109の厚さの上限は最小加工寸法Fに応じて決定すればよい。例えば、Fが20nmであれば、5nm以下とすることが好ましく、Fが10nmであれば、2.5nm以下とすることが好ましい。
厚さ2nm乃至5nmの第3の絶縁物110を形成する。第3の絶縁物110としては各種のhigh−k材料を用いることができるが、酸化ハフニウム、酸化ジルコニウム、酸化タンタル等が好ましい。さらに、再び、酸化窒化インジウムによって、第2の高仕事関数化合物半導体層111を形成する。この際、孔108が酸化窒化インジウムによって埋められるように、第2の高仕事関数化合物半導体層111を形成するとよい。
第2の高仕事関数化合物半導体層111をエッチングすることにより、孔108以外の部分の第3の絶縁物110を露出させ、対向電極112を形成する。この工程は、孔108の入り口付近での、電極間のショートを防止するためにおこなう。
その後、第4の絶縁物113、第3コンタクトプラグ114を形成し、さらに第5の絶縁物115を形成し、キャパシタ線116a、116b、116cを形成する。本実施の形態では、図4(D)に示すように、キャパシタ線116a、116b、116cをワード線103a、103bと平行に形成する。しかし、キャパシタ線をビット線105と平行に形成してもよい。
図3(A)乃至図3(C)、図4(E)および図4(F)に本実施の形態を示す。本実施の形態は薄膜トランジスタを用いて、オープンビット型のDRAMを作製するものである。オープンビット型のDRAMのメモリセルの面積は理想的には、実施の形態1で説明したFoldedビット線型DRAMよりも小さい6F2(Fは最小加工寸法)まで小さくできる。以下図面にしたがって説明する。
第1の絶縁物201の上にビット線202を形成する。さらに、第2の絶縁物203を形成し、これにビット線202に接続する第1コンタクトプラグ204を形成する。さらに、適切な厚さおよび大きさの半導体層205、半導体層205を覆う第3の絶縁物206、ワード線207a、207bを形成する。第3の絶縁物206は薄膜トランジスタのゲート絶縁膜としても機能する。
第4の絶縁物208を形成し、第2コンタクトプラグ209a、209bを形成する。さらにキャパシタを形成するための孔を有する第5の絶縁物210を形成し、高仕事関数化合物半導体層211a、211bとそれらを覆う第6の絶縁物212を形成する。第6の絶縁物212としてはhigh−k材料を用いるとよい。高仕事関数化合物半導体層211a、211bと第6の絶縁物212の作製方法については実施の形態1を参照すればよい。
対向電極213a、213bを形成した後、第7の絶縁物214と対向電極213a、213bに接続する第3コンタクトプラグ215a、215b、キャパシタ線216を形成する。以上で、オープンビット型DRAMのメモリセルを作製できる。
図5及び図6に本実施の形態を示す。本実施の形態は2つのトランジスタを用いて、信号増幅型のメモリセル(特許文献4参照)を作製するものである。
単結晶シリコン等の基板301に導電性領域302a、302b、フローティングゲート303を形成する。このうち、導電性領域302aは図6(B)に共通電位線CLで示される配線となり、書き込みワード線WWL、読み出しワード線RWLと平行に形成する。また、第1の絶縁物304を形成する。
第1の絶縁物304をエッチングして、フローティングゲート303の表面を露出させ、また、コンタクトホールを形成して、導電性領域302bに接続する第1コンタクトプラグ305を埋め込む。さらに、厚さ2nm乃至10nm、好ましくは2nm乃至5nmの適切な形状、面積の半導体層306と、それを覆う第2の絶縁物307を形成する。半導体層306の材料は上記した条件を満たすものを選択するとよい。
反応性スパッタリング法で酸窒化亜鉛もしくは酸窒化インジウム、酸窒化錫、酸窒化インジウム亜鉛、酸窒化インジウム亜鉛ガリウム(組成式はInaGabZncOdNe、(0≦a≦1、0≦b≦1、0≦c≦1、0≦d≦1、0≦e≦1))等の仕事関数の高い酸窒化物膜(以下、高仕事関数酸窒化物膜308という)を成膜する。
高仕事関数酸窒化物膜308と導電性膜309をエッチングして、これらの積層した膜よりなる書き込みワード線310と読み出しワード線311を形成する。また、書き込みワード線310と読み出しワード線311をマスクとして、アルゴンのような希ガス元素、燐やアルミニウム、ガリウム等の酸化されやすい元素等を照射して半導体層306に酸素欠損等を導入し、n型領域312を形成する。窒素イオンを照射しても同様にn型領域を作製できる。
第3の絶縁物313と、第1コンタクトプラグ305に接続する第2コンタクトプラグ314、およびビット線315を形成する。ビット線315は図6(B)のビット線BLに相当し、書き込みワード線WWLと直交する。
図7に本実施の形態を示す。本実施の形態では実施の形態3と同様に図6(B)に示すメモリセルの作製工程について説明する。以下図面にしたがって説明する。なお、詳細は実施の形態3を参照すればよい。
実施の形態3で説明した方法等により、基板401上に、導電性領域402a、402b、フローティングゲート403、第1の絶縁物404、第1コンタクトプラグ405、半導体層406、第2の絶縁物407、書き込みワード線408、第3の絶縁物409を形成する。なお、ここで、書き込みワード線には特に高仕事関数化合物半導体を用いる必要はない。
フローティングゲート403、あるいは第1コンタクトプラグ405に接続する第2コンタクトプラグ410を形成する。さらに、高仕事関数酸窒化物膜411をいくつかの第2コンタクトプラグ410と接するように形成する。高仕事関数酸窒化物膜411の作製方法は実施の形態3を参照すればよい。
第5の絶縁物415と、第2コンタクトプラグ410のうち、高仕事関数酸窒化物膜411が設けられていないものに接続する第3コンタクトプラグ416、および第3コンタクトプラグ416に接続するビット線417を形成する。このようにして作製されるメモリセルの面積は6F2乃至9F2(Fは最小加工寸法)となる。
102 第1の絶縁物
103a ワード線
103b ワード線
104 第1コンタクトプラグ
105 ビット線
106 第2コンタクトプラグ
107 第2の絶縁物
108 孔
109 第1の高仕事関数化合物半導体層
110 第3の絶縁物
111 第2の高仕事関数化合物半導体層
112 対向電極
113 第4の絶縁物
114 第3コンタクトプラグ
115 第5の絶縁物
116a キャパシタ線
116b キャパシタ線
116c キャパシタ線
201 第1の絶縁物
202 ビット線
203 第2の絶縁物
204 第1コンタクトプラグ
205 半導体層
206 第3の絶縁物
207a ワード線
207b ワード線
208 第4の絶縁物
209a 第2コンタクトプラグ
209b 第2コンタクトプラグ
210 第5の絶縁物
211a 高仕事関数化合物半導体層
211b 高仕事関数化合物半導体層
212 第6の絶縁物
213a 対向電極
213b 対向電極
214 第7の絶縁物
215a 第3コンタクトプラグ
215b 第3コンタクトプラグ
216 キャパシタ線
301 基板
302a 導電性領域
302b 導電性領域
303 フローティングゲート
304 第1の絶縁物
305 第1コンタクトプラグ
306 半導体層
307 第2の絶縁物
308 高仕事関数酸窒化物膜
309 導電性膜
310 書き込みワード線
311 読み出しワード線
312 n型領域
313 第3の絶縁物
314 第2コンタクトプラグ
315 ビット線
316 キャパシタ
401 基板
402a 導電性領域
402b 導電性領域
403 フローティングゲート
404 第1の絶縁物
405 第1コンタクトプラグ
406 半導体層
407 第2の絶縁物
408 書き込みワード線
409 第3の絶縁物
410 第2コンタクトプラグ
411 高仕事関数酸窒化物膜
412 第4の絶縁物
413 読み出しワード線
414 キャパシタ
415 第5の絶縁物
416 第3コンタクトプラグ
417 ビット線
WL ワード線
BL ビット線
CL 共通電位線
CS キャパシタ
WT 書き込みトランジスタ
RT 読み出しトランジスタ
WWL 書き込みワード線
RWL 読み出しワード線
Claims (8)
- 誘電体の一つの面に接して設けられた、インジウム、錫あるいは亜鉛の少なくとも一つと窒素とを有し、仕事関数が5.0電子ボルト以上のn型半導体を有するキャパシタ。
- 誘電体の一つの面に接して設けられた、インジウム、錫あるいは亜鉛の少なくとも一つと窒素とを有し、仕事関数が5.0電子ボルト以上のn型半導体と、前記n型半導体に対向するように前記誘電体の他の面に設けられた導電性を有する材料とを有する半導体装置。
- 絶縁物の側面に形成された、インジウム、錫あるいは亜鉛の少なくとも一つと窒素とを有し、仕事関数が5.0電子ボルト以上の膜状のn型半導体と、前記n型半導体上に形成された膜状の誘電体とを有する半導体装置。
- 請求項1乃至3のいずれか一において、前記n型半導体は、その仕事関数が5.5電子ボルト以上であることを特徴とする半導体装置。
- 前記誘電体はチタン酸ストロンチウム、チタン酸鉛、チタン酸バリウムストロンチウム、ジルコン酸鉛、ジルコン酸バリウム、酸化タンタル、ビスマスチタン酸ストロンチウム、酸化チタン、酸化ジルコニウム、酸化ハフニウム、酸化アルミニウム、酸化イットリウム、酸化ランタン、珪酸ジルコニウム、珪酸ハフニウムから選ばれた1つ以上の材料を含むことを特徴とする請求項1乃至4のいずれか一に記載の半導体装置。
- 前記誘電体は、ストロンチウム、チタン、バリウム、ジルコニウム、鉛、タンタル、ビスマス、ハフニウム、アルミニウム、イットリウム、ランタンから選ばれた1つ以上の元素が、誘電体を構成する金属元素のうちの50%以上である酸化物であることを特徴とする請求項1乃至5のいずれか一に記載の半導体装置。
- 前記n型半導体の厚さは4nm以上10nm以下であることを特徴とする請求項1乃至6のいずれか一に記載の半導体装置。
- 前記n型半導体は、5原子%以上50原子%以下の濃度の窒素を有することを特徴とする請求項1乃至7のいずれか一に記載の半導体装置。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160024377A (ko) | 2013-06-21 | 2016-03-04 | 도쿄엘렉트론가부시키가이샤 | 산화 탄탈막의 제거 방법 및 제거 장치 |
KR20170116209A (ko) * | 2012-09-28 | 2017-10-18 | 인텔 코포레이션 | 항복 전압이 높은 ⅲ-n 공핍 모드 mos 커패시터들 |
US10134727B2 (en) | 2012-09-28 | 2018-11-20 | Intel Corporation | High breakdown voltage III-N depletion mode MOS capacitors |
JP2021061434A (ja) * | 2014-03-07 | 2021-04-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160043247A1 (en) * | 2013-03-15 | 2016-02-11 | Arkema Inc. | Nitrogen-containing transparent conductive oxide cap layer composition |
KR102259172B1 (ko) | 2014-05-30 | 2021-06-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이의 제조 방법, 및 전자 장치 |
CN105514105B (zh) | 2014-09-26 | 2019-08-06 | 联华电子股份有限公司 | 集成电路与其形成方法 |
US9871044B2 (en) * | 2015-11-06 | 2018-01-16 | Micron Technology, Inc. | Enhanced charge storage materials, related semiconductor memory cells and semiconductor devices, and related systems and methods |
JP6751866B2 (ja) * | 2016-04-22 | 2020-09-09 | 国立研究開発法人産業技術総合研究所 | 半導体強誘電体記憶素子の製造方法及び半導体強誘電体記憶トランジスタ |
US10818729B2 (en) * | 2018-05-17 | 2020-10-27 | Macronix International Co., Ltd. | Bit cost scalable 3D phase change cross-point memory |
US11322500B2 (en) * | 2020-07-28 | 2022-05-03 | HeFeChip Corporation Limited | Stacked capacitor with horizontal and vertical fin structures and method for making the same |
CN115188759A (zh) * | 2021-04-02 | 2022-10-14 | 长鑫存储技术有限公司 | 电容器阵列结构及制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001057412A (ja) * | 1999-08-19 | 2001-02-27 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2005346925A (ja) * | 2002-06-06 | 2005-12-15 | Fuji Electric Holdings Co Ltd | 有機発光素子およびその製造方法 |
JP2007053171A (ja) * | 2005-08-16 | 2007-03-01 | Toshiba Corp | 不揮発性半導体メモリ装置 |
JP2009218263A (ja) * | 2008-03-07 | 2009-09-24 | Elpida Memory Inc | キャパシタ用電極及びその製造方法、半導体装置 |
JP2010212361A (ja) * | 2009-03-09 | 2010-09-24 | Toshiba Corp | 半導体装置 |
Family Cites Families (113)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960014718B1 (en) | 1993-05-14 | 1996-10-19 | Lg Semicon Co Ltd | Method of manufacturing transistor |
JP2638487B2 (ja) | 1994-06-30 | 1997-08-06 | 日本電気株式会社 | 半導体記憶装置 |
JP3723599B2 (ja) | 1995-04-07 | 2005-12-07 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
KR100394896B1 (ko) | 1995-08-03 | 2003-11-28 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 투명스위칭소자를포함하는반도체장치 |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP2950265B2 (ja) | 1996-07-30 | 1999-09-20 | 日本電気株式会社 | 半導体記憶装置 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP2001352130A (ja) | 2000-06-05 | 2001-12-21 | Fuji Photo Film Co Ltd | 半導体レーザーおよびその作製方法 |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
US7064313B1 (en) * | 2000-10-05 | 2006-06-20 | Ess Technology, Inc. | Gradual reset voltage reduction for resetting an image sensor |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
EP1443130B1 (en) | 2001-11-05 | 2011-09-28 | Japan Science and Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
US6890807B2 (en) * | 2003-05-06 | 2005-05-10 | Intel Corporation | Method for making a semiconductor device having a metal gate electrode |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
EP1737044B1 (en) | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
EP1812969B1 (en) | 2004-11-10 | 2015-05-06 | Canon Kabushiki Kaisha | Field effect transistor comprising an amorphous oxide |
CN101057333B (zh) | 2004-11-10 | 2011-11-16 | 佳能株式会社 | 发光器件 |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI562380B (en) | 2005-01-28 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
US20070046189A1 (en) * | 2005-08-31 | 2007-03-01 | Eastman Kodak Company | Intermediate connector for a tandem OLED device |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101117948B1 (ko) | 2005-11-15 | 2012-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 디스플레이 장치 제조 방법 |
US20070114616A1 (en) * | 2005-11-23 | 2007-05-24 | Dirk Manger | Field effect transistor and method of manufacturing the same |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP2007335573A (ja) | 2006-06-14 | 2007-12-27 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP5329024B2 (ja) | 2006-06-27 | 2013-10-30 | 国立大学法人東北大学 | 半導体装置 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
JP5086625B2 (ja) | 2006-12-15 | 2012-11-28 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
WO2008108383A1 (ja) * | 2007-03-02 | 2008-09-12 | Nec Corporation | グラフェンを用いる半導体装置及びその製造方法 |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
US8274078B2 (en) | 2007-04-25 | 2012-09-25 | Canon Kabushiki Kaisha | Metal oxynitride semiconductor containing zinc |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
JP5215158B2 (ja) | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
US8208300B2 (en) * | 2008-01-08 | 2012-06-26 | Spansion Israel Ltd | Non-volatile memory cell with injector |
GB0802912D0 (en) * | 2008-02-15 | 2008-03-26 | Carben Semicon Ltd | Thin-film transistor, carbon-based layer and method of production thereof |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
KR101178166B1 (ko) * | 2009-04-28 | 2012-08-30 | 캐논 아네르바 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
JP2011003717A (ja) * | 2009-06-18 | 2011-01-06 | Panasonic Corp | 半導体装置及びその製造方法 |
CN102812547B (zh) | 2010-03-19 | 2015-09-09 | 株式会社半导体能源研究所 | 半导体装置 |
US8354313B2 (en) * | 2010-04-30 | 2013-01-15 | International Business Machines Corporation | Method to optimize work function in complementary metal oxide semiconductor (CMOS) structures |
US8373239B2 (en) * | 2010-06-08 | 2013-02-12 | International Business Machines Corporation | Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric |
US20120119302A1 (en) * | 2010-11-11 | 2012-05-17 | International Business Machines Corporation | Trench Silicide Contact With Low Interface Resistance |
US8569810B2 (en) * | 2010-12-07 | 2013-10-29 | International Business Machines Corporation | Metal semiconductor alloy contact with low resistance |
-
2012
- 2012-01-09 US US13/346,172 patent/US8513773B2/en active Active
- 2012-01-31 KR KR1020120009505A patent/KR101903347B1/ko active IP Right Grant
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001057412A (ja) * | 1999-08-19 | 2001-02-27 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2005346925A (ja) * | 2002-06-06 | 2005-12-15 | Fuji Electric Holdings Co Ltd | 有機発光素子およびその製造方法 |
JP2007053171A (ja) * | 2005-08-16 | 2007-03-01 | Toshiba Corp | 不揮発性半導体メモリ装置 |
JP2009218263A (ja) * | 2008-03-07 | 2009-09-24 | Elpida Memory Inc | キャパシタ用電極及びその製造方法、半導体装置 |
JP2010212361A (ja) * | 2009-03-09 | 2010-09-24 | Toshiba Corp | 半導体装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20170116209A (ko) * | 2012-09-28 | 2017-10-18 | 인텔 코포레이션 | 항복 전압이 높은 ⅲ-n 공핍 모드 mos 커패시터들 |
US10134727B2 (en) | 2012-09-28 | 2018-11-20 | Intel Corporation | High breakdown voltage III-N depletion mode MOS capacitors |
KR101941397B1 (ko) * | 2012-09-28 | 2019-01-22 | 인텔 코포레이션 | 항복 전압이 높은 ⅲ-n 공핍 모드 mos 커패시터들 |
KR20160024377A (ko) | 2013-06-21 | 2016-03-04 | 도쿄엘렉트론가부시키가이샤 | 산화 탄탈막의 제거 방법 및 제거 장치 |
JP2021061434A (ja) * | 2014-03-07 | 2021-04-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP7111797B2 (ja) | 2014-03-07 | 2022-08-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11751409B2 (en) | 2014-03-07 | 2023-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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