JP2012178543A5 - - Google Patents
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- JP2012178543A5 JP2012178543A5 JP2011261009A JP2011261009A JP2012178543A5 JP 2012178543 A5 JP2012178543 A5 JP 2012178543A5 JP 2011261009 A JP2011261009 A JP 2011261009A JP 2011261009 A JP2011261009 A JP 2011261009A JP 2012178543 A5 JP2012178543 A5 JP 2012178543A5
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- conductivity type
- regions
- impurity region
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000012535 impurity Substances 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 8
- 238000002513 implantation Methods 0.000 claims 5
- 229910010272 inorganic material Inorganic materials 0.000 claims 3
- 239000011147 inorganic material Substances 0.000 claims 3
- 229920002120 photoresistant polymer Polymers 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000002834 transmittance Methods 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011261009A JP6004635B2 (ja) | 2011-02-01 | 2011-11-29 | 半導体装置の製造方法 |
| US13/349,062 US8476153B2 (en) | 2011-02-01 | 2012-01-12 | Method of manufacturing a semiconductor device |
| CN201210020142.5A CN102629554B (zh) | 2011-02-01 | 2012-01-29 | 半导体器件的制造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011020088 | 2011-02-01 | ||
| JP2011020088 | 2011-02-01 | ||
| JP2011261009A JP6004635B2 (ja) | 2011-02-01 | 2011-11-29 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012178543A JP2012178543A (ja) | 2012-09-13 |
| JP2012178543A5 true JP2012178543A5 (enExample) | 2015-01-22 |
| JP6004635B2 JP6004635B2 (ja) | 2016-10-12 |
Family
ID=46577704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011261009A Expired - Fee Related JP6004635B2 (ja) | 2011-02-01 | 2011-11-29 | 半導体装置の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8476153B2 (enExample) |
| JP (1) | JP6004635B2 (enExample) |
| CN (1) | CN102629554B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881571B (zh) * | 2012-09-28 | 2014-11-26 | 京东方科技集团股份有限公司 | 有源层离子注入方法及薄膜晶体管有源层离子注入方法 |
| US9012244B2 (en) * | 2012-11-12 | 2015-04-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to form multiple trenches utilizing a grayscale mask |
| KR102170761B1 (ko) * | 2013-07-22 | 2020-10-27 | 삼성전자주식회사 | 반도체 소자의 패턴 형성 방법 |
| WO2015060905A1 (en) * | 2013-10-22 | 2015-04-30 | Applied Materials, Inc. | Pattern generators employing processors to vary delivery dose of writing beams according to photoresist thickness, and associated methods |
| CN103700632B (zh) * | 2013-12-26 | 2016-04-06 | 京东方科技集团股份有限公司 | Cmos晶体管及其制作方法、显示面板和显示装置 |
| US10043541B1 (en) | 2015-12-12 | 2018-08-07 | Magnecomp Corporation | Disk drive head stack assembly having height-controlled suspension circuit tail tack |
| JP2018107358A (ja) * | 2016-12-27 | 2018-07-05 | キヤノン株式会社 | 撮像装置の製造方法および撮像システム |
| CN109411411A (zh) * | 2018-12-07 | 2019-03-01 | 深圳市华星光电半导体显示技术有限公司 | Goa阵列基板的制作方法及液晶显示器 |
| CN111524903B (zh) * | 2020-04-23 | 2023-03-28 | 深圳市华星光电半导体显示技术有限公司 | Goa阵列基板及制备方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3341514B2 (ja) * | 1995-02-02 | 2002-11-05 | ソニー株式会社 | 半導体装置の製造方法 |
| KR0161389B1 (ko) * | 1995-02-16 | 1999-01-15 | 윤종용 | 마스크 및 이를 사용한 패턴형성방법 |
| JPH1126392A (ja) * | 1997-07-01 | 1999-01-29 | Nippon Steel Corp | 半導体装置の製造方法 |
| JP2001127168A (ja) * | 1999-10-22 | 2001-05-11 | Nec Corp | 半導体装置及びその製造方法 |
| JP2001237326A (ja) * | 2000-02-25 | 2001-08-31 | Dainippon Printing Co Ltd | Ｍｏｓトランジスターのしきい値電圧制御用のイオン注入方法 |
| JP2002231924A (ja) | 2001-01-30 | 2002-08-16 | Sony Corp | 固体撮像素子及びその製造方法 |
| JP3754378B2 (ja) * | 2002-02-14 | 2006-03-08 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| JP4565799B2 (ja) * | 2002-07-01 | 2010-10-20 | 大林精工株式会社 | 横電界方式液晶表示装置、その製造方法、走査露光装置およびミックス走査露光装置 |
| US7737519B2 (en) * | 2004-05-06 | 2010-06-15 | Canon Kabushiki Kaisha | Photoelectric conversion device and manufacturing method thereof |
| JP2006165161A (ja) | 2004-12-06 | 2006-06-22 | Sony Corp | 固体撮像装置及びその製造方法 |
| JP2006165143A (ja) | 2004-12-06 | 2006-06-22 | Sony Corp | 固体撮像装置及びその製造方法 |
| JP4810831B2 (ja) | 2005-01-14 | 2011-11-09 | ソニー株式会社 | 半導体装置及びその製造方法 |
| US7759186B2 (en) * | 2008-09-03 | 2010-07-20 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices |
| JP5522980B2 (ja) | 2009-06-18 | 2014-06-18 | キヤノン株式会社 | 固体撮像装置、固体撮像装置を用いた撮像システム、および固体撮像装置の製造方法 |
-
2011
- 2011-11-29 JP JP2011261009A patent/JP6004635B2/ja not_active Expired - Fee Related
-
2012
- 2012-01-12 US US13/349,062 patent/US8476153B2/en not_active Expired - Fee Related
- 2012-01-29 CN CN201210020142.5A patent/CN102629554B/zh not_active Expired - Fee Related
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