JP2012178543A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000012535 impurity Substances 0.000 claims abstract description 132
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 35
- 150000002500 ions Chemical class 0.000 claims abstract description 28
- 238000002834 transmittance Methods 0.000 claims abstract description 19
- 238000002513 implantation Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 37
- 229910010272 inorganic material Inorganic materials 0.000 claims description 18
- 239000011147 inorganic material Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 description 29
- 238000003384 imaging method Methods 0.000 description 15
- 238000000206 photolithography Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】複数の不純物領域を半導体基板内に有し、半導体基板の表面から複数の不純物領域の不純物濃度のピーク位置までの深さが互いに異なる半導体装置の製造方法が提供される。本方法は、光透過率が互いに異なる複数の領域を含むフォトマスクを用いて、半導体基板に塗布されたフォトレジストを露光する露光工程と、フォトレジストを現像して、フォトレジストの露光量に依存した互いに異なる膜厚を有する複数の領域を含むレジストパターンを形成する現像工程と、レジストパターンの膜厚が互いに異なる複数の領域を通して半導体基板に不純物イオンを注入して、半導体基板の表面からピーク位置までの深さが互いに異なる複数の不純物領域を形成する注入工程とを有し、ピーク位置までの深さは、注入される不純物イオンが通るレジストパターンの膜厚に依存することを特徴とする。
【選択図】図1
Description
Claims (8)
- 複数の不純物領域を半導体基板内に有し、前記半導体基板の表面から前記複数の不純物領域の不純物濃度のピーク位置までの深さが互いに異なる半導体装置の製造方法であって、
光透過率が互いに異なる複数の領域を含むフォトマスクを用いて、半導体基板に塗布されたフォトレジストを露光する露光工程と、
前記フォトレジストを現像して、前記フォトレジストの露光量に依存した互いに異なる膜厚を有する複数の領域を含むレジストパターンを形成する現像工程と、
前記レジストパターンの膜厚が互いに異なる前記複数の領域を通して前記半導体基板に不純物イオンを注入して、前記半導体基板の表面から前記ピーク位置までの深さが互いに異なる複数の不純物領域を形成する注入工程と
を有し、
前記ピーク位置までの深さは、前記注入される不純物イオンが通る前記レジストパターンの膜厚に依存する
ことを特徴とする製造方法。 - 複数の不純物領域を半導体基板内に有し、前記半導体基板の表面から前記複数の不純物領域の不純物濃度のピーク位置までの深さが互いに異なる半導体装置の製造方法であって、
光透過率が互いに異なる複数の領域を含むフォトマスクを用いて、無機材料からなる膜の上に塗布されたフォトレジストを露光する露光工程と、
前記フォトレジストを現像して、前記フォトレジストの露光量に依存した互いに異なる膜厚を有する複数の領域を含むレジストパターンを形成する現像工程と、
前記レジストパターンをマスクとしてエッチングを行い、前記無機材料からなる膜から、異なる膜厚を有する複数の領域を有する無機材料パターンを形成するエッチング工程と、
前記無機材料パターンの膜厚が互いに異なる前記複数の領域を通して前記半導体基板に不純物イオンを注入して、前記半導体基板の表面から前記ピーク位置までの深さが互いに異なる複数の不純物領域を形成する注入工程と
を有し、
前記ピーク位置までの深さは、前記注入される不純物イオンが通る前記無機材料パターンの膜厚に依存する
ことを特徴とする製造方法。 - 前記無機材料は、酸化シリコン又は窒化シリコンからなる請求項2に記載の製造方法。
- 前記注入工程において、前記膜厚が互いに異なる複数の領域を通して同時に不純物イオンを注入することを特徴とする請求項1乃至3の何れか1項に記載の製造方法。
- 前記注入工程において、前記不純物イオンの注入は少なくとも、第1エネルギーで行われる第1注入と、前記第1エネルギーよりも低いエネルギーで行われる第2注入とを有することを特徴とする請求項1乃至3の何れか1項に記載の製造方法。
- 前記第1注入におけるドーズ量と、前記第2注入におけるドーズ量とは互いに異なることを特徴とする請求項5に記載の製造方法。
- 前記半導体基板に注入された不純物イオンを熱拡散する工程をさらに有することを特徴とする請求項1乃至6の何れか1項に記載の製造方法。
- 前記フォトマスクはグレートーンマスク又はハーフトーンマスクであることを特徴とする請求項1乃至7の何れか1項に記載の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011261009A JP6004635B2 (ja) | 2011-02-01 | 2011-11-29 | 半導体装置の製造方法 |
US13/349,062 US8476153B2 (en) | 2011-02-01 | 2012-01-12 | Method of manufacturing a semiconductor device |
CN201210020142.5A CN102629554B (zh) | 2011-02-01 | 2012-01-29 | 半导体器件的制造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011020088 | 2011-02-01 | ||
JP2011020088 | 2011-02-01 | ||
JP2011261009A JP6004635B2 (ja) | 2011-02-01 | 2011-11-29 | 半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
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JP2012178543A true JP2012178543A (ja) | 2012-09-13 |
JP2012178543A5 JP2012178543A5 (ja) | 2015-01-22 |
JP6004635B2 JP6004635B2 (ja) | 2016-10-12 |
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JP2011261009A Expired - Fee Related JP6004635B2 (ja) | 2011-02-01 | 2011-11-29 | 半導体装置の製造方法 |
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US (1) | US8476153B2 (ja) |
JP (1) | JP6004635B2 (ja) |
CN (1) | CN102629554B (ja) |
Cited By (2)
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---|---|---|---|---|
KR20150011207A (ko) * | 2013-07-22 | 2015-01-30 | 삼성전자주식회사 | 반도체 소자의 패턴 형성 방법 |
JP2018107358A (ja) * | 2016-12-27 | 2018-07-05 | キヤノン株式会社 | 撮像装置の製造方法および撮像システム |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102881571B (zh) * | 2012-09-28 | 2014-11-26 | 京东方科技集团股份有限公司 | 有源层离子注入方法及薄膜晶体管有源层离子注入方法 |
US9012244B2 (en) * | 2012-11-12 | 2015-04-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to form multiple trenches utilizing a grayscale mask |
WO2015060905A1 (en) * | 2013-10-22 | 2015-04-30 | Applied Materials, Inc. | Pattern generators employing processors to vary delivery dose of writing beams according to photoresist thickness, and associated methods |
CN103700632B (zh) * | 2013-12-26 | 2016-04-06 | 京东方科技集团股份有限公司 | Cmos晶体管及其制作方法、显示面板和显示装置 |
US10043541B1 (en) | 2015-12-12 | 2018-08-07 | Magnecomp Corporation | Disk drive head stack assembly having height-controlled suspension circuit tail tack |
CN109411411A (zh) * | 2018-12-07 | 2019-03-01 | 深圳市华星光电半导体显示技术有限公司 | Goa阵列基板的制作方法及液晶显示器 |
CN111524903B (zh) * | 2020-04-23 | 2023-03-28 | 深圳市华星光电半导体显示技术有限公司 | Goa阵列基板及制备方法 |
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JPH08213582A (ja) * | 1995-02-02 | 1996-08-20 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
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-
2011
- 2011-11-29 JP JP2011261009A patent/JP6004635B2/ja not_active Expired - Fee Related
-
2012
- 2012-01-12 US US13/349,062 patent/US8476153B2/en not_active Expired - Fee Related
- 2012-01-29 CN CN201210020142.5A patent/CN102629554B/zh not_active Expired - Fee Related
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JPH08213582A (ja) * | 1995-02-02 | 1996-08-20 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
JPH08250446A (ja) * | 1995-02-16 | 1996-09-27 | Samsung Electron Co Ltd | グレートーンマスク、これを用いたパターンの形成方法およびイオン注入方法 |
JPH1126392A (ja) * | 1997-07-01 | 1999-01-29 | Nippon Steel Corp | 半導体装置の製造方法 |
JP2001127168A (ja) * | 1999-10-22 | 2001-05-11 | Nec Corp | 半導体装置及びその製造方法 |
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KR20150011207A (ko) * | 2013-07-22 | 2015-01-30 | 삼성전자주식회사 | 반도체 소자의 패턴 형성 방법 |
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JP2018107358A (ja) * | 2016-12-27 | 2018-07-05 | キヤノン株式会社 | 撮像装置の製造方法および撮像システム |
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Publication number | Publication date |
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US8476153B2 (en) | 2013-07-02 |
CN102629554A (zh) | 2012-08-08 |
US20120196429A1 (en) | 2012-08-02 |
CN102629554B (zh) | 2015-04-08 |
JP6004635B2 (ja) | 2016-10-12 |
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