CN102629554B - 半导体器件的制造方法 - Google Patents

半导体器件的制造方法 Download PDF

Info

Publication number
CN102629554B
CN102629554B CN201210020142.5A CN201210020142A CN102629554B CN 102629554 B CN102629554 B CN 102629554B CN 201210020142 A CN201210020142 A CN 201210020142A CN 102629554 B CN102629554 B CN 102629554B
Authority
CN
China
Prior art keywords
regions
impurity
semiconductor substrate
manufacturing
resist pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210020142.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN102629554A (zh
Inventor
手塚智之
篠原真人
川端康博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN102629554A publication Critical patent/CN102629554A/zh
Application granted granted Critical
Publication of CN102629554B publication Critical patent/CN102629554B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201210020142.5A 2011-02-01 2012-01-29 半导体器件的制造方法 Expired - Fee Related CN102629554B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011020088 2011-02-01
JP2011-020088 2011-02-01
JP2011-261009 2011-11-29
JP2011261009A JP6004635B2 (ja) 2011-02-01 2011-11-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN102629554A CN102629554A (zh) 2012-08-08
CN102629554B true CN102629554B (zh) 2015-04-08

Family

ID=46577704

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210020142.5A Expired - Fee Related CN102629554B (zh) 2011-02-01 2012-01-29 半导体器件的制造方法

Country Status (3)

Country Link
US (1) US8476153B2 (enExample)
JP (1) JP6004635B2 (enExample)
CN (1) CN102629554B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102881571B (zh) 2012-09-28 2014-11-26 京东方科技集团股份有限公司 有源层离子注入方法及薄膜晶体管有源层离子注入方法
US9012244B2 (en) * 2012-11-12 2015-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method to form multiple trenches utilizing a grayscale mask
KR102170761B1 (ko) * 2013-07-22 2020-10-27 삼성전자주식회사 반도체 소자의 패턴 형성 방법
US10012910B2 (en) * 2013-10-22 2018-07-03 Applied Materials, Inc. Pattern generators employing processors to vary delivery dose of writing beams according to photoresist thickness, and associated methods
CN103700632B (zh) * 2013-12-26 2016-04-06 京东方科技集团股份有限公司 Cmos晶体管及其制作方法、显示面板和显示装置
US10043541B1 (en) 2015-12-12 2018-08-07 Magnecomp Corporation Disk drive head stack assembly having height-controlled suspension circuit tail tack
JP2018107358A (ja) * 2016-12-27 2018-07-05 キヤノン株式会社 撮像装置の製造方法および撮像システム
CN109411411A (zh) * 2018-12-07 2019-03-01 深圳市华星光电半导体显示技术有限公司 Goa阵列基板的制作方法及液晶显示器
CN111524903B (zh) * 2020-04-23 2023-03-28 深圳市华星光电半导体显示技术有限公司 Goa阵列基板及制备方法
JP2022146813A (ja) * 2021-03-22 2022-10-05 キオクシア株式会社 半導体装置の製造方法およびイオンビーム照射装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1438679A (zh) * 2002-02-14 2003-08-27 株式会社日立制作所 半导体集成电路器件的制造方法
CN1470927A (zh) * 2002-07-01 2004-01-28 ��־�������ʽ���� 横向电场方式液晶显示装置、其制造方法以及扫描曝光装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3341514B2 (ja) * 1995-02-02 2002-11-05 ソニー株式会社 半導体装置の製造方法
KR0161389B1 (ko) * 1995-02-16 1999-01-15 윤종용 마스크 및 이를 사용한 패턴형성방법
JPH1126392A (ja) * 1997-07-01 1999-01-29 Nippon Steel Corp 半導体装置の製造方法
JP2001127168A (ja) * 1999-10-22 2001-05-11 Nec Corp 半導体装置及びその製造方法
JP2001237326A (ja) * 2000-02-25 2001-08-31 Dainippon Printing Co Ltd Ｍｏｓトランジスターのしきい値電圧制御用のイオン注入方法
JP2002231924A (ja) 2001-01-30 2002-08-16 Sony Corp 固体撮像素子及びその製造方法
US7737519B2 (en) * 2004-05-06 2010-06-15 Canon Kabushiki Kaisha Photoelectric conversion device and manufacturing method thereof
JP2006165143A (ja) 2004-12-06 2006-06-22 Sony Corp 固体撮像装置及びその製造方法
JP2006165161A (ja) 2004-12-06 2006-06-22 Sony Corp 固体撮像装置及びその製造方法
JP4810831B2 (ja) 2005-01-14 2011-11-09 ソニー株式会社 半導体装置及びその製造方法
US7759186B2 (en) * 2008-09-03 2010-07-20 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating junction termination extension with formation of photosensitive dopant mask to control doping profile and lateral width for high-voltage electronic devices
JP5522980B2 (ja) 2009-06-18 2014-06-18 キヤノン株式会社 固体撮像装置、固体撮像装置を用いた撮像システム、および固体撮像装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1438679A (zh) * 2002-02-14 2003-08-27 株式会社日立制作所 半导体集成电路器件的制造方法
CN1470927A (zh) * 2002-07-01 2004-01-28 ��־�������ʽ���� 横向电场方式液晶显示装置、其制造方法以及扫描曝光装置

Also Published As

Publication number Publication date
JP2012178543A (ja) 2012-09-13
US8476153B2 (en) 2013-07-02
JP6004635B2 (ja) 2016-10-12
US20120196429A1 (en) 2012-08-02
CN102629554A (zh) 2012-08-08

Similar Documents

Publication Publication Date Title
CN102629554B (zh) 半导体器件的制造方法
KR20080069555A (ko) 얼라인먼트 마크 형성 방법, 얼라인먼트 방법, 반도체장치의 제조방법 및 고체 촬상 장치의 제조방법
WO2011111754A1 (ja) 半導体装置及び半導体装置の製造方法
US20090236645A1 (en) Cmos image sensor and method for manufacturing the same
US20080293206A1 (en) Unique ldmos process integration
JP2003282858A (ja) フォトダイオードを有するイメージセンサ及びその製造方法
CN100433290C (zh) 互补型金属氧化物半导体图像传感器的制造方法
JP2012178543A5 (enExample)
US8323860B2 (en) Solid-state imaging device producing method and exposure mask
CN101866938A (zh) 制造具有无等离子体损坏的光电二极管的互补金属氧化物半导体图像传感器的方法
CN115274722B (zh) 图像传感器及其制作方法
JP5950507B2 (ja) 半導体装置の製造方法およびｃｍｏｓイメージセンサーの製造方法
KR20090071067A (ko) 이미지 센서 및 그 제조방법
TWI707386B (zh) 半導體裝置及半導體裝置的製造方法
CN110176467B (zh) Cmos图像传感器及其制造方法
CN104157661B (zh) 一种cmos图像传感器的制造方法
JP4763242B2 (ja) 固体撮像素子およびその製造方法
CN116169027A (zh) 半导体装置的制作方法
JPH06260607A (ja) 半導体装置およびその製造方法
CN101221967A (zh) Cmos图像传感器及其制备方法
CN101192572B (zh) 图像传感器制造方法
CN116137271A (zh) 背照式图像传感器及制作方法
JP2015130447A (ja) 固体撮像装置の製造方法
KR100328812B1 (ko) 이온 주입방법
JP2003264278A (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150408

Termination date: 20210129