JP2012164697A - 電力用パワーモジュール及び電力用半導体装置 - Google Patents

電力用パワーモジュール及び電力用半導体装置 Download PDF

Info

Publication number
JP2012164697A
JP2012164697A JP2011021679A JP2011021679A JP2012164697A JP 2012164697 A JP2012164697 A JP 2012164697A JP 2011021679 A JP2011021679 A JP 2011021679A JP 2011021679 A JP2011021679 A JP 2011021679A JP 2012164697 A JP2012164697 A JP 2012164697A
Authority
JP
Japan
Prior art keywords
power
semiconductor element
power semiconductor
heat spreader
power module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011021679A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012164697A5 (enExample
Inventor
Yasushi Nakajima
泰 中島
Noriyuki Betsushiba
範之 別芝
Hirotoshi Maekawa
博敏 前川
Seiji Ishibashi
誠司 石橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2011021679A priority Critical patent/JP2012164697A/ja
Publication of JP2012164697A publication Critical patent/JP2012164697A/ja
Publication of JP2012164697A5 publication Critical patent/JP2012164697A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83909—Post-treatment of the layer connector or bonding area
    • H01L2224/83951—Forming additional members, e.g. for reinforcing, fillet sealant
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2011021679A 2011-02-03 2011-02-03 電力用パワーモジュール及び電力用半導体装置 Pending JP2012164697A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011021679A JP2012164697A (ja) 2011-02-03 2011-02-03 電力用パワーモジュール及び電力用半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011021679A JP2012164697A (ja) 2011-02-03 2011-02-03 電力用パワーモジュール及び電力用半導体装置

Publications (2)

Publication Number Publication Date
JP2012164697A true JP2012164697A (ja) 2012-08-30
JP2012164697A5 JP2012164697A5 (enExample) 2013-08-01

Family

ID=46843838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011021679A Pending JP2012164697A (ja) 2011-02-03 2011-02-03 電力用パワーモジュール及び電力用半導体装置

Country Status (1)

Country Link
JP (1) JP2012164697A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015029186A1 (ja) * 2013-08-29 2015-03-05 三菱電機株式会社 半導体モジュール、半導体装置、及び自動車
JP2016096302A (ja) * 2014-11-17 2016-05-26 トヨタ自動車株式会社 半導体装置とその製造方法
WO2016125669A1 (ja) * 2015-02-02 2016-08-11 株式会社村田製作所 半導体モジュール
WO2017138402A1 (ja) * 2016-02-08 2017-08-17 ローム株式会社 半導体装置、パワーモジュール、およびその製造方法
JP2018063999A (ja) * 2016-10-11 2018-04-19 トヨタ自動車株式会社 半導体装置
CN115023805A (zh) * 2020-02-06 2022-09-06 三菱电机株式会社 半导体模块和电力变换装置
JP2023033668A (ja) * 2021-08-30 2023-03-13 株式会社 日立パワーデバイス 半導体装置及びその製造方法
WO2024004026A1 (ja) * 2022-06-28 2024-01-04 三菱電機株式会社 半導体装置及び電力変換装置
WO2025010223A1 (en) * 2023-07-03 2025-01-09 Tesla, Inc. Semiconductor device package with improved cooling

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556648A (en) * 1978-10-20 1980-04-25 Toshiba Corp Semiconductor device
JPS5867050A (ja) * 1981-10-16 1983-04-21 Nec Corp 樹脂封止型半導体装置
JPH09213844A (ja) * 1995-09-04 1997-08-15 Anam Ind Co Inc 二重封止部を有するヒートシンク内装型半導体パッケージ及びその製造方法
JPH11243165A (ja) * 1998-12-22 1999-09-07 Sanken Electric Co Ltd 半導体装置
JP2010114257A (ja) * 2008-11-06 2010-05-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2010219420A (ja) * 2009-03-18 2010-09-30 Fuji Electric Systems Co Ltd 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5556648A (en) * 1978-10-20 1980-04-25 Toshiba Corp Semiconductor device
JPS5867050A (ja) * 1981-10-16 1983-04-21 Nec Corp 樹脂封止型半導体装置
JPH09213844A (ja) * 1995-09-04 1997-08-15 Anam Ind Co Inc 二重封止部を有するヒートシンク内装型半導体パッケージ及びその製造方法
JPH11243165A (ja) * 1998-12-22 1999-09-07 Sanken Electric Co Ltd 半導体装置
JP2010114257A (ja) * 2008-11-06 2010-05-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2010219420A (ja) * 2009-03-18 2010-09-30 Fuji Electric Systems Co Ltd 半導体装置

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11239123B2 (en) * 2013-08-29 2022-02-01 Mitsubishi Electric Corporation Semiconductor module, semiconductor device, and vehicle
CN105493272A (zh) * 2013-08-29 2016-04-13 三菱电机株式会社 半导体模块、半导体装置以及汽车
US20160111345A1 (en) * 2013-08-29 2016-04-21 Mitsubishi Electric Corporation Semiconductor module, semiconductor device, and vehicle
JPWO2015029186A1 (ja) * 2013-08-29 2017-03-02 三菱電機株式会社 半導体モジュール、半導体装置、及び自動車
WO2015029186A1 (ja) * 2013-08-29 2015-03-05 三菱電機株式会社 半導体モジュール、半導体装置、及び自動車
CN105493272B (zh) * 2013-08-29 2019-03-15 三菱电机株式会社 半导体模块、半导体装置以及汽车
DE112013007390B4 (de) 2013-08-29 2020-06-25 Mitsubishi Electric Corporation Halbleitermodul, Halbleitervorrichtung und Fahrzeug
JP2016096302A (ja) * 2014-11-17 2016-05-26 トヨタ自動車株式会社 半導体装置とその製造方法
WO2016125669A1 (ja) * 2015-02-02 2016-08-11 株式会社村田製作所 半導体モジュール
JPWO2016125669A1 (ja) * 2015-02-02 2017-10-12 株式会社村田製作所 半導体モジュール
WO2017138402A1 (ja) * 2016-02-08 2017-08-17 ローム株式会社 半導体装置、パワーモジュール、およびその製造方法
JP2018063999A (ja) * 2016-10-11 2018-04-19 トヨタ自動車株式会社 半導体装置
CN115023805A (zh) * 2020-02-06 2022-09-06 三菱电机株式会社 半导体模块和电力变换装置
JP2023033668A (ja) * 2021-08-30 2023-03-13 株式会社 日立パワーデバイス 半導体装置及びその製造方法
JP7619723B2 (ja) 2021-08-30 2025-01-22 ミネベアパワーデバイス株式会社 半導体装置及びその製造方法
WO2024004026A1 (ja) * 2022-06-28 2024-01-04 三菱電機株式会社 半導体装置及び電力変換装置
JP7493686B1 (ja) * 2022-06-28 2024-05-31 三菱電機株式会社 半導体装置及び電力変換装置
WO2025010223A1 (en) * 2023-07-03 2025-01-09 Tesla, Inc. Semiconductor device package with improved cooling

Similar Documents

Publication Publication Date Title
JP2012164697A (ja) 電力用パワーモジュール及び電力用半導体装置
JP7419781B2 (ja) 半導体モジュール
JP5306171B2 (ja) 半導体装置
JP5251791B2 (ja) 樹脂封止型半導体装置およびその製造方法
JP6336138B2 (ja) 半導体装置
JP2014216459A (ja) 半導体装置
JP6576108B2 (ja) 電力用半導体装置
JP3988735B2 (ja) 半導体装置及びその製造方法
JP2013219267A (ja) パワーモジュール
US10090223B2 (en) Semiconductor device and method of manufacturing same
JP6150866B2 (ja) 電力半導体装置
JP6303776B2 (ja) 半導体装置
US9245954B2 (en) Semiconductor device and production method thereof
JP6048238B2 (ja) 電子装置
JPWO2014141346A1 (ja) 半導体装置
JP4645406B2 (ja) 半導体装置
JP6129090B2 (ja) パワーモジュール及びパワーモジュールの製造方法
JP2021141237A (ja) 半導体装置
JP2013074035A (ja) 半導体装置の製造方法
JP2017135310A (ja) 半導体装置
JP2014013931A (ja) 半導体パッケージ
JP6157320B2 (ja) 電力用半導体装置、電力用半導体モジュール、および電力用半導体装置の製造方法
JP5849935B2 (ja) 半導体装置及び半導体装置の製造方法
JP2012227337A (ja) 半導体装置
JP4961398B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130301

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130618

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131108

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131112

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131225

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140401