JP2012129225A - 記憶素子、メモリ装置 - Google Patents

記憶素子、メモリ装置 Download PDF

Info

Publication number
JP2012129225A
JP2012129225A JP2010276590A JP2010276590A JP2012129225A JP 2012129225 A JP2012129225 A JP 2012129225A JP 2010276590 A JP2010276590 A JP 2010276590A JP 2010276590 A JP2010276590 A JP 2010276590A JP 2012129225 A JP2012129225 A JP 2012129225A
Authority
JP
Japan
Prior art keywords
film
layer
magnetization
thickness
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010276590A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012129225A5 (enExample
Inventor
Hiroyuki Omori
広之 大森
Masakatsu Hosomi
政功 細見
Kazuhiro Bessho
和宏 別所
Yutaka Higo
豊 肥後
Kazuaki Yamane
一陽 山根
Hiroyuki Uchida
裕行 内田
Tetsuya Asayama
徹哉 浅山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2010276590A priority Critical patent/JP2012129225A/ja
Priority to US13/310,846 priority patent/US8945730B2/en
Priority to CN201110401742.1A priority patent/CN102543176B/zh
Publication of JP2012129225A publication Critical patent/JP2012129225A/ja
Publication of JP2012129225A5 publication Critical patent/JP2012129225A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/091—Constructional adaptation of the sensor to specific applications
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1114—Magnetoresistive having tunnel junction effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer
    • Y10T428/1129—Super lattice [e.g., giant magneto resistance [GMR] or colossal magneto resistance [CMR], etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1143—Magnetoresistive with defined structural feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/115—Magnetic layer composition

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2010276590A 2010-12-13 2010-12-13 記憶素子、メモリ装置 Pending JP2012129225A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010276590A JP2012129225A (ja) 2010-12-13 2010-12-13 記憶素子、メモリ装置
US13/310,846 US8945730B2 (en) 2010-12-13 2011-12-05 Storage element and memory device
CN201110401742.1A CN102543176B (zh) 2010-12-13 2011-12-06 存储元件和存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010276590A JP2012129225A (ja) 2010-12-13 2010-12-13 記憶素子、メモリ装置

Publications (2)

Publication Number Publication Date
JP2012129225A true JP2012129225A (ja) 2012-07-05
JP2012129225A5 JP2012129225A5 (enExample) 2014-01-16

Family

ID=46199693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010276590A Pending JP2012129225A (ja) 2010-12-13 2010-12-13 記憶素子、メモリ装置

Country Status (3)

Country Link
US (1) US8945730B2 (enExample)
JP (1) JP2012129225A (enExample)
CN (1) CN102543176B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017157874A (ja) * 2017-06-19 2017-09-07 株式会社日立ハイテクノロジーズ 磁気抵抗素子の製造方法、及び磁気抵抗素子
KR20180018858A (ko) * 2013-03-12 2018-02-21 마이크론 테크놀로지, 인크 메모리 셀, 제조 방법, 반도체 디바이스 구조, 및 메모리 시스템
JP2021145078A (ja) * 2020-03-13 2021-09-24 国立大学法人京都大学 磁気メモリ素子

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102082328B1 (ko) 2013-07-03 2020-02-27 삼성전자주식회사 수직 자기터널접합을 구비하는 자기 기억 소자
CN104000726B (zh) * 2014-06-09 2017-09-12 嘉兴太美医疗科技有限公司 一种智能药盒系统
US10832750B2 (en) * 2019-02-22 2020-11-10 Sandisk Technologies Llc Perpendicular spin transfer torque MRAM memory cell with cap layer to achieve lower current density and increased write margin

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080088980A1 (en) * 2006-10-13 2008-04-17 Eiji Kitagawa Magnetoresistive element and magnetic memory
US20090091863A1 (en) * 2007-10-03 2009-04-09 Keiji Hosotani Magnetoresistive element
US20090108383A1 (en) * 2007-10-31 2009-04-30 Magic Technologies, Inc. High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
JP2010010720A (ja) * 2009-10-13 2010-01-14 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
US20100078763A1 (en) * 2008-09-29 2010-04-01 Kabushiki Kaisha Toshiba Resistance-change memory having resistance-change element and manufacturing method thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101114694A (zh) 2002-11-26 2008-01-30 株式会社东芝 磁单元和磁存储器
JP4371781B2 (ja) 2002-11-26 2009-11-25 株式会社東芝 磁気セル及び磁気メモリ
JP2004335931A (ja) * 2003-05-12 2004-11-25 Alps Electric Co Ltd Ｃｐｐ型巨大磁気抵抗効果素子
JP4160945B2 (ja) * 2004-01-30 2008-10-08 Ｔｄｋ株式会社 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、およびハードディスク装置
US8063459B2 (en) * 2007-02-12 2011-11-22 Avalanche Technologies, Inc. Non-volatile magnetic memory element with graded layer
JP2007305882A (ja) * 2006-05-12 2007-11-22 Sony Corp 記憶素子及びメモリ
JP2008160031A (ja) * 2006-12-26 2008-07-10 Sony Corp 記憶素子及びメモリ
JP4380707B2 (ja) * 2007-01-19 2009-12-09 ソニー株式会社 記憶素子
JP4682998B2 (ja) * 2007-03-15 2011-05-11 ソニー株式会社 記憶素子及びメモリ
JP2009081215A (ja) 2007-09-25 2009-04-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
FR2931011B1 (fr) * 2008-05-06 2010-05-28 Commissariat Energie Atomique Element magnetique a ecriture assistee thermiquement
US8300356B2 (en) * 2010-05-11 2012-10-30 Headway Technologies, Inc. CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording
US8537504B2 (en) * 2010-09-16 2013-09-17 HGST Netherlands B.V. Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic buffer, shielding and seed layers
JP5085703B2 (ja) * 2010-09-17 2012-11-28 株式会社東芝 磁気記録素子および不揮発性記憶装置
US9006704B2 (en) * 2011-02-11 2015-04-14 Headway Technologies, Inc. Magnetic element with improved out-of-plane anisotropy for spintronic applications

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080088980A1 (en) * 2006-10-13 2008-04-17 Eiji Kitagawa Magnetoresistive element and magnetic memory
JP2008098523A (ja) * 2006-10-13 2008-04-24 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
US20090091863A1 (en) * 2007-10-03 2009-04-09 Keiji Hosotani Magnetoresistive element
JP2009094104A (ja) * 2007-10-03 2009-04-30 Toshiba Corp 磁気抵抗素子
US20090108383A1 (en) * 2007-10-31 2009-04-30 Magic Technologies, Inc. High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
JP2009111396A (ja) * 2007-10-31 2009-05-21 Magic Technologies Inc 磁気トンネル接合素子、ｍｒａｍ、ｓｔｔ−ｒａｍ、ｍｒａｍの製造方法、ｓｔｔ−ｒａｍの製造方法
US20100078763A1 (en) * 2008-09-29 2010-04-01 Kabushiki Kaisha Toshiba Resistance-change memory having resistance-change element and manufacturing method thereof
JP2010080848A (ja) * 2008-09-29 2010-04-08 Toshiba Corp 抵抗変化メモリ及びその製造方法
JP2010010720A (ja) * 2009-10-13 2010-01-14 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180018858A (ko) * 2013-03-12 2018-02-21 마이크론 테크놀로지, 인크 메모리 셀, 제조 방법, 반도체 디바이스 구조, 및 메모리 시스템
KR102039280B1 (ko) * 2013-03-12 2019-10-31 마이크론 테크놀로지, 인크 메모리 셀, 제조 방법, 반도체 디바이스 구조, 및 메모리 시스템
JP2017157874A (ja) * 2017-06-19 2017-09-07 株式会社日立ハイテクノロジーズ 磁気抵抗素子の製造方法、及び磁気抵抗素子
JP2021145078A (ja) * 2020-03-13 2021-09-24 国立大学法人京都大学 磁気メモリ素子
JP7518524B2 (ja) 2020-03-13 2024-07-18 国立大学法人京都大学 磁気メモリ素子

Also Published As

Publication number Publication date
US20120148874A1 (en) 2012-06-14
CN102543176A (zh) 2012-07-04
CN102543176B (zh) 2017-03-01
US8945730B2 (en) 2015-02-03

Similar Documents

Publication Publication Date Title
KR100900109B1 (ko) 자기저항 효과 소자 및 자기저항 랜덤 액세스 메모리
JP6182993B2 (ja) 記憶素子、記憶装置、記憶素子の製造方法、磁気ヘッド
JP6244617B2 (ja) 記憶素子、記憶装置、磁気ヘッド
JP6194752B2 (ja) 記憶素子、記憶装置、磁気ヘッド
CN102610270B (zh) 存储元件和存储器装置
US9099642B2 (en) Memory element and memory device
JP2012043967A (ja) 磁気メモリ素子
JP5987613B2 (ja) 記憶素子、記憶装置、磁気ヘッド
JP2013115413A (ja) 記憶素子、記憶装置
JP2012146727A (ja) 記憶素子及び記憶装置
JP2012235015A (ja) 記憶素子及び記憶装置
CN102403026A (zh) 存储元件和存储装置
JP2013033881A (ja) 記憶素子及び記憶装置
JP5786341B2 (ja) 記憶素子、メモリ装置
JP2012238631A (ja) 記憶素子、記憶装置
JP2012151213A5 (enExample)
JP2014072393A (ja) 記憶素子、記憶装置、磁気ヘッド
JP2013115319A (ja) 記憶素子、記憶装置
JP2012160681A (ja) 記憶素子、メモリ装置
JP2013115399A (ja) 記憶素子、記憶装置
CN102543176B (zh) 存储元件和存储装置
JP2013115412A (ja) 記憶素子、記憶装置
TW201222546A (en) Memory element and memory device
JP2017212464A (ja) 記憶素子、記憶装置、磁気ヘッド
JP2015207775A (ja) スピントランスファトルク記憶素子、記憶装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131122

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131122

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20141120

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150106

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20151006