JP2012129225A5 - - Google Patents

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Publication number
JP2012129225A5
JP2012129225A5 JP2010276590A JP2010276590A JP2012129225A5 JP 2012129225 A5 JP2012129225 A5 JP 2012129225A5 JP 2010276590 A JP2010276590 A JP 2010276590A JP 2010276590 A JP2010276590 A JP 2010276590A JP 2012129225 A5 JP2012129225 A5 JP 2012129225A5
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JP
Japan
Prior art keywords
film
layer
mgo
magnetization
thickness
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Pending
Application number
JP2010276590A
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English (en)
Japanese (ja)
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JP2012129225A (ja
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Publication date
Application filed filed Critical
Priority to JP2010276590A priority Critical patent/JP2012129225A/ja
Priority claimed from JP2010276590A external-priority patent/JP2012129225A/ja
Priority to US13/310,846 priority patent/US8945730B2/en
Priority to CN201110401742.1A priority patent/CN102543176B/zh
Publication of JP2012129225A publication Critical patent/JP2012129225A/ja
Publication of JP2012129225A5 publication Critical patent/JP2012129225A5/ja
Pending legal-status Critical Current

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JP2010276590A 2010-12-13 2010-12-13 記憶素子、メモリ装置 Pending JP2012129225A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010276590A JP2012129225A (ja) 2010-12-13 2010-12-13 記憶素子、メモリ装置
US13/310,846 US8945730B2 (en) 2010-12-13 2011-12-05 Storage element and memory device
CN201110401742.1A CN102543176B (zh) 2010-12-13 2011-12-06 存储元件和存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010276590A JP2012129225A (ja) 2010-12-13 2010-12-13 記憶素子、メモリ装置

Publications (2)

Publication Number Publication Date
JP2012129225A JP2012129225A (ja) 2012-07-05
JP2012129225A5 true JP2012129225A5 (enExample) 2014-01-16

Family

ID=46199693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010276590A Pending JP2012129225A (ja) 2010-12-13 2010-12-13 記憶素子、メモリ装置

Country Status (3)

Country Link
US (1) US8945730B2 (enExample)
JP (1) JP2012129225A (enExample)
CN (1) CN102543176B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9379315B2 (en) * 2013-03-12 2016-06-28 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, and memory systems
KR102082328B1 (ko) 2013-07-03 2020-02-27 삼성전자주식회사 수직 자기터널접합을 구비하는 자기 기억 소자
CN104000726B (zh) * 2014-06-09 2017-09-12 嘉兴太美医疗科技有限公司 一种智能药盒系统
JP6616803B2 (ja) * 2017-06-19 2019-12-04 株式会社日立ハイテクノロジーズ 磁気抵抗素子の製造方法、及び磁気抵抗素子
US10832750B2 (en) * 2019-02-22 2020-11-10 Sandisk Technologies Llc Perpendicular spin transfer torque MRAM memory cell with cap layer to achieve lower current density and increased write margin
JP7518524B2 (ja) * 2020-03-13 2024-07-18 国立大学法人京都大学 磁気メモリ素子

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101114694A (zh) 2002-11-26 2008-01-30 株式会社东芝 磁单元和磁存储器
JP4371781B2 (ja) 2002-11-26 2009-11-25 株式会社東芝 磁気セル及び磁気メモリ
JP2004335931A (ja) * 2003-05-12 2004-11-25 Alps Electric Co Ltd Ｃｐｐ型巨大磁気抵抗効果素子
JP4160945B2 (ja) * 2004-01-30 2008-10-08 Ｔｄｋ株式会社 磁気抵抗効果素子、薄膜磁気ヘッド、ヘッドジンバルアセンブリ、およびハードディスク装置
US8063459B2 (en) * 2007-02-12 2011-11-22 Avalanche Technologies, Inc. Non-volatile magnetic memory element with graded layer
JP2007305882A (ja) * 2006-05-12 2007-11-22 Sony Corp 記憶素子及びメモリ
JP2008098523A (ja) * 2006-10-13 2008-04-24 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
JP2008160031A (ja) * 2006-12-26 2008-07-10 Sony Corp 記憶素子及びメモリ
JP4380707B2 (ja) * 2007-01-19 2009-12-09 ソニー株式会社 記憶素子
JP4682998B2 (ja) * 2007-03-15 2011-05-11 ソニー株式会社 記憶素子及びメモリ
JP2009081215A (ja) 2007-09-25 2009-04-16 Toshiba Corp 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
JP2009094104A (ja) * 2007-10-03 2009-04-30 Toshiba Corp 磁気抵抗素子
US8372661B2 (en) * 2007-10-31 2013-02-12 Magic Technologies, Inc. High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
FR2931011B1 (fr) * 2008-05-06 2010-05-28 Commissariat Energie Atomique Element magnetique a ecriture assistee thermiquement
JP4772845B2 (ja) * 2008-09-29 2011-09-14 株式会社東芝 磁気ランダムアクセスメモリ及びその製造方法
JP5172808B2 (ja) * 2009-10-13 2013-03-27 株式会社東芝 磁気抵抗効果素子およびそれを用いた磁気ランダムアクセスメモリ
US8300356B2 (en) * 2010-05-11 2012-10-30 Headway Technologies, Inc. CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording
US8537504B2 (en) * 2010-09-16 2013-09-17 HGST Netherlands B.V. Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic buffer, shielding and seed layers
JP5085703B2 (ja) * 2010-09-17 2012-11-28 株式会社東芝 磁気記録素子および不揮発性記憶装置
US9006704B2 (en) * 2011-02-11 2015-04-14 Headway Technologies, Inc. Magnetic element with improved out-of-plane anisotropy for spintronic applications

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