JP2012054336A5 - - Google Patents
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- Publication number
- JP2012054336A5 JP2012054336A5 JP2010194469A JP2010194469A JP2012054336A5 JP 2012054336 A5 JP2012054336 A5 JP 2012054336A5 JP 2010194469 A JP2010194469 A JP 2010194469A JP 2010194469 A JP2010194469 A JP 2010194469A JP 2012054336 A5 JP2012054336 A5 JP 2012054336A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ion
- ions
- trivalent
- oxide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 14
- 239000010409 thin film Substances 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 5
- 229910001449 indium ion Inorganic materials 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 4
- 229910052742 iron Inorganic materials 0.000 claims 4
- -1 oxygen ions Chemical class 0.000 claims 4
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 239000011159 matrix material Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000024121 nodulation Effects 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010194469A JP5081960B2 (ja) | 2010-08-31 | 2010-08-31 | 酸化物焼結体及び酸化物半導体薄膜 |
| PCT/JP2011/067131 WO2012029454A1 (ja) | 2010-08-31 | 2011-07-27 | 酸化物焼結体及び酸化物半導体薄膜 |
| KR1020137008042A KR101303987B1 (ko) | 2010-08-31 | 2011-07-27 | 산화물 소결체 및 산화물 반도체 박막 |
| TW100128648A TWI410393B (zh) | 2010-08-31 | 2011-08-11 | Oxide sintered body and oxide semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010194469A JP5081960B2 (ja) | 2010-08-31 | 2010-08-31 | 酸化物焼結体及び酸化物半導体薄膜 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012054336A JP2012054336A (ja) | 2012-03-15 |
| JP2012054336A5 true JP2012054336A5 (enExample) | 2012-08-16 |
| JP5081960B2 JP5081960B2 (ja) | 2012-11-28 |
Family
ID=45772563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010194469A Active JP5081960B2 (ja) | 2010-08-31 | 2010-08-31 | 酸化物焼結体及び酸化物半導体薄膜 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5081960B2 (enExample) |
| KR (1) | KR101303987B1 (enExample) |
| TW (1) | TWI410393B (enExample) |
| WO (1) | WO2012029454A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6078288B2 (ja) * | 2012-06-13 | 2017-02-08 | 出光興産株式会社 | スパッタリングターゲット、半導体薄膜及びそれを用いた薄膜トランジスタ |
| KR101526667B1 (ko) * | 2013-06-10 | 2015-06-05 | 현대자동차주식회사 | 친환경 차량의 배터리모듈 간접 냉각 및 가열 장치 |
| JP6801168B2 (ja) * | 2014-06-27 | 2020-12-16 | 三菱マテリアル株式会社 | スパッタリングターゲット、光学機能膜、及び、積層配線膜 |
| JP7625671B1 (ja) | 2023-10-17 | 2025-02-03 | 株式会社コベルコ科研 | 酸化物半導体薄膜、薄膜トランジスタおよびスパッタリングターゲット |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101650955B (zh) * | 2003-03-04 | 2011-08-24 | Jx日矿日石金属株式会社 | 溅射靶、光信息记录介质用薄膜及其制造方法 |
| US20070102289A1 (en) * | 2004-07-09 | 2007-05-10 | Kazuteru Kato | Sputtering target material |
| JP5466939B2 (ja) * | 2007-03-23 | 2014-04-09 | 出光興産株式会社 | 半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法 |
| JP4555358B2 (ja) * | 2008-03-24 | 2010-09-29 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよび表示装置 |
| JP2009253204A (ja) * | 2008-04-10 | 2009-10-29 | Idemitsu Kosan Co Ltd | 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法 |
| JP5218032B2 (ja) * | 2008-12-25 | 2013-06-26 | 東ソー株式会社 | 透明導電膜用焼結体の製造方法 |
| TWI387497B (zh) * | 2009-01-22 | 2013-03-01 | China Steel Corp | Manufacturing method of nickel alloy target |
-
2010
- 2010-08-31 JP JP2010194469A patent/JP5081960B2/ja active Active
-
2011
- 2011-07-27 KR KR1020137008042A patent/KR101303987B1/ko active Active
- 2011-07-27 WO PCT/JP2011/067131 patent/WO2012029454A1/ja not_active Ceased
- 2011-08-11 TW TW100128648A patent/TWI410393B/zh active
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