JP2012054336A5 - - Google Patents
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- Publication number
- JP2012054336A5 JP2012054336A5 JP2010194469A JP2010194469A JP2012054336A5 JP 2012054336 A5 JP2012054336 A5 JP 2012054336A5 JP 2010194469 A JP2010194469 A JP 2010194469A JP 2010194469 A JP2010194469 A JP 2010194469A JP 2012054336 A5 JP2012054336 A5 JP 2012054336A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ion
- ions
- trivalent
- oxide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 14
- 239000010409 thin film Substances 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 5
- 229910001449 indium ion Inorganic materials 0.000 claims 4
- 150000002500 ions Chemical class 0.000 claims 4
- 229910052742 iron Inorganic materials 0.000 claims 4
- -1 oxygen ions Chemical class 0.000 claims 4
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 239000011159 matrix material Substances 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000024121 nodulation Effects 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010194469A JP5081960B2 (ja) | 2010-08-31 | 2010-08-31 | 酸化物焼結体及び酸化物半導体薄膜 |
| PCT/JP2011/067131 WO2012029454A1 (ja) | 2010-08-31 | 2011-07-27 | 酸化物焼結体及び酸化物半導体薄膜 |
| KR1020137008042A KR101303987B1 (ko) | 2010-08-31 | 2011-07-27 | 산화물 소결체 및 산화물 반도체 박막 |
| TW100128648A TWI410393B (zh) | 2010-08-31 | 2011-08-11 | Oxide sintered body and oxide semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010194469A JP5081960B2 (ja) | 2010-08-31 | 2010-08-31 | 酸化物焼結体及び酸化物半導体薄膜 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012054336A JP2012054336A (ja) | 2012-03-15 |
| JP2012054336A5 true JP2012054336A5 (enExample) | 2012-08-16 |
| JP5081960B2 JP5081960B2 (ja) | 2012-11-28 |
Family
ID=45772563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010194469A Active JP5081960B2 (ja) | 2010-08-31 | 2010-08-31 | 酸化物焼結体及び酸化物半導体薄膜 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5081960B2 (enExample) |
| KR (1) | KR101303987B1 (enExample) |
| TW (1) | TWI410393B (enExample) |
| WO (1) | WO2012029454A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6078288B2 (ja) * | 2012-06-13 | 2017-02-08 | 出光興産株式会社 | スパッタリングターゲット、半導体薄膜及びそれを用いた薄膜トランジスタ |
| KR101526667B1 (ko) * | 2013-06-10 | 2015-06-05 | 현대자동차주식회사 | 친환경 차량의 배터리모듈 간접 냉각 및 가열 장치 |
| JP6801168B2 (ja) * | 2014-06-27 | 2020-12-16 | 三菱マテリアル株式会社 | スパッタリングターゲット、光学機能膜、及び、積層配線膜 |
| JP7625671B1 (ja) | 2023-10-17 | 2025-02-03 | 株式会社コベルコ科研 | 酸化物半導体薄膜、薄膜トランジスタおよびスパッタリングターゲット |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4611198B2 (ja) * | 2003-03-04 | 2011-01-12 | Ｊｘ日鉱日石金属株式会社 | 光情報記録媒体用の非晶質性保護膜を形成するためのスパッタリングターゲット、光情報記録媒体用の非晶質性保護膜及びその製造方法 |
| KR100778429B1 (ko) * | 2004-07-09 | 2007-11-21 | 미쓰이 긴조꾸 고교 가부시키가이샤 | 스퍼터링 타깃재 |
| US8158974B2 (en) * | 2007-03-23 | 2012-04-17 | Idemitsu Kosan Co., Ltd. | Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor |
| JP4555358B2 (ja) * | 2008-03-24 | 2010-09-29 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよび表示装置 |
| JP2009253204A (ja) * | 2008-04-10 | 2009-10-29 | Idemitsu Kosan Co Ltd | 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法 |
| JP5218032B2 (ja) * | 2008-12-25 | 2013-06-26 | 東ソー株式会社 | 透明導電膜用焼結体の製造方法 |
| TWI387497B (zh) * | 2009-01-22 | 2013-03-01 | China Steel Corp | Manufacturing method of nickel alloy target |
-
2010
- 2010-08-31 JP JP2010194469A patent/JP5081960B2/ja active Active
-
2011
- 2011-07-27 WO PCT/JP2011/067131 patent/WO2012029454A1/ja not_active Ceased
- 2011-07-27 KR KR1020137008042A patent/KR101303987B1/ko active Active
- 2011-08-11 TW TW100128648A patent/TWI410393B/zh active
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