JP5081960B2 - 酸化物焼結体及び酸化物半導体薄膜 - Google Patents

酸化物焼結体及び酸化物半導体薄膜 Download PDF

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Publication number
JP5081960B2
JP5081960B2 JP2010194469A JP2010194469A JP5081960B2 JP 5081960 B2 JP5081960 B2 JP 5081960B2 JP 2010194469 A JP2010194469 A JP 2010194469A JP 2010194469 A JP2010194469 A JP 2010194469A JP 5081960 B2 JP5081960 B2 JP 5081960B2
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Prior art keywords
oxide
thin film
sintered body
ions
oxide semiconductor
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Japanese (ja)
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JP2012054336A (ja
JP2012054336A5 (enExample
Inventor
英生 高見
幸三 長田
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JX Nippon Mining and Metals Corp
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JX Nippon Mining and Metals Corp
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Priority to JP2010194469A priority Critical patent/JP5081960B2/ja
Priority to PCT/JP2011/067131 priority patent/WO2012029454A1/ja
Priority to KR1020137008042A priority patent/KR101303987B1/ko
Priority to TW100128648A priority patent/TWI410393B/zh
Publication of JP2012054336A publication Critical patent/JP2012054336A/ja
Publication of JP2012054336A5 publication Critical patent/JP2012054336A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/62218—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products obtaining ceramic films, e.g. by using temporary supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • C—CHEMISTRY; METALLURGY
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    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/327—Iron group oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3272—Iron oxides or oxide forming salts thereof, e.g. hematite, magnetite
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3281—Copper oxides, cuprates or oxide-forming salts thereof, e.g. CuO or Cu2O
    • C—CHEMISTRY; METALLURGY
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    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2010194469A 2010-08-31 2010-08-31 酸化物焼結体及び酸化物半導体薄膜 Active JP5081960B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010194469A JP5081960B2 (ja) 2010-08-31 2010-08-31 酸化物焼結体及び酸化物半導体薄膜
PCT/JP2011/067131 WO2012029454A1 (ja) 2010-08-31 2011-07-27 酸化物焼結体及び酸化物半導体薄膜
KR1020137008042A KR101303987B1 (ko) 2010-08-31 2011-07-27 산화물 소결체 및 산화물 반도체 박막
TW100128648A TWI410393B (zh) 2010-08-31 2011-08-11 Oxide sintered body and oxide semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010194469A JP5081960B2 (ja) 2010-08-31 2010-08-31 酸化物焼結体及び酸化物半導体薄膜

Publications (3)

Publication Number Publication Date
JP2012054336A JP2012054336A (ja) 2012-03-15
JP2012054336A5 JP2012054336A5 (enExample) 2012-08-16
JP5081960B2 true JP5081960B2 (ja) 2012-11-28

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JP2010194469A Active JP5081960B2 (ja) 2010-08-31 2010-08-31 酸化物焼結体及び酸化物半導体薄膜

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JP (1) JP5081960B2 (enExample)
KR (1) KR101303987B1 (enExample)
TW (1) TWI410393B (enExample)
WO (1) WO2012029454A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6078288B2 (ja) * 2012-06-13 2017-02-08 出光興産株式会社 スパッタリングターゲット、半導体薄膜及びそれを用いた薄膜トランジスタ
KR101526667B1 (ko) * 2013-06-10 2015-06-05 현대자동차주식회사 친환경 차량의 배터리모듈 간접 냉각 및 가열 장치
JP6801168B2 (ja) * 2014-06-27 2020-12-16 三菱マテリアル株式会社 スパッタリングターゲット、光学機能膜、及び、積層配線膜
JP7625671B1 (ja) 2023-10-17 2025-02-03 株式会社コベルコ科研 酸化物半導体薄膜、薄膜トランジスタおよびスパッタリングターゲット

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4611198B2 (ja) * 2003-03-04 2011-01-12 Ｊｘ日鉱日石金属株式会社 光情報記録媒体用の非晶質性保護膜を形成するためのスパッタリングターゲット、光情報記録媒体用の非晶質性保護膜及びその製造方法
KR100778429B1 (ko) * 2004-07-09 2007-11-21 미쓰이 긴조꾸 고교 가부시키가이샤 스퍼터링 타깃재
US8158974B2 (en) * 2007-03-23 2012-04-17 Idemitsu Kosan Co., Ltd. Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
JP4555358B2 (ja) * 2008-03-24 2010-09-29 富士フイルム株式会社 薄膜電界効果型トランジスタおよび表示装置
JP2009253204A (ja) * 2008-04-10 2009-10-29 Idemitsu Kosan Co Ltd 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法
JP5218032B2 (ja) * 2008-12-25 2013-06-26 東ソー株式会社 透明導電膜用焼結体の製造方法
TWI387497B (zh) * 2009-01-22 2013-03-01 China Steel Corp Manufacturing method of nickel alloy target

Also Published As

Publication number Publication date
WO2012029454A1 (ja) 2012-03-08
KR101303987B1 (ko) 2013-09-04
JP2012054336A (ja) 2012-03-15
KR20130046449A (ko) 2013-05-07
TW201209007A (en) 2012-03-01
TWI410393B (zh) 2013-10-01

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