JP2012054336A5

JP2012054336A5 -

Info

Publication number: JP2012054336A5
Application number: JP2010194469A
Authority: JP
Filing date: 2010-08-31
Publication date: 2012-08-16
Anticipated expiration: 2030-08-31

Description

（酸化物焼結体の相対密度）
酸化物焼結体の相対密度は、スパッタ時の表面のノジュール発生と相関があり、酸化物焼結体が低密度であると、その酸化物焼結体をターゲットに加工してスパッタ成膜する際に、スパッタの成膜の経過に従って、表面にインジウムの低級酸化物である、突起状のノジュールと呼ばれる高抵抗部分が発生してきて、その後のスパッタ時に異常放電の起点となり易い。本発明では、組成の適正範囲の適正化によって酸化物焼結体の相対密度を９８％以上とすることができ、この程度の高密度であれば、スパッタ時のノジュールによる悪影響は殆どない。相対密度は好ましくは９９％以上であり、より好ましくは９９．５％以上である。
なお、酸化物焼結体の相対密度は、酸化物焼結体を所定の形状に加工した後の重量と外形寸法より算出した密度を、その酸化物焼結体の理論密度で除することで求めることができる。 (Relative density of sintered oxide)
The relative density of the sintered oxide is correlated with nodule formation of surface during sputtering, the oxide sintered body is a low density, by processing the oxide sintered body target sputtering In this case, a high resistance portion called a protruding nodule, which is a lower oxide of indium, is generated on the surface with the progress of sputtering film formation, and is likely to be a starting point of abnormal discharge during subsequent sputtering. In the present invention, the relative density of the oxide sintered body can be set to 98% or more by optimizing the appropriate range of the composition, and if this density is high, there is almost no adverse effect due to nodules during sputtering. The relative density is preferably 99% or more, more preferably 99.5% or more.
The relative density of the oxide sintered body is obtained by dividing the density calculated from the weight and outer dimensions after processing the oxide sintered body into a predetermined shape by the theoretical density of the oxide sintered body. Can be sought.

Claims

Trivalent indium ion (In ³⁺ ), trivalent iron ion (Fe ³⁺ ), and divalent X ion (X ²⁺ ) (where X is selected from Cu, Zn and Fe) An oxide sintered body composed of oxygen ions (O ²⁻ ) and trivalent indium ions (In ³⁺ ), trivalent iron ions (Fe ³⁺ ). , And the divalent X ion (X ²⁺ ) atomic ratio is 0.2 ≦ (In ³⁺ ) / {(In ³⁺ ) + (Fe ³⁺ ) + (X ²⁺ )} ≦ 0, respectively. .8, 0.1 ≦ (Fe ³⁺ ) / {(In ³⁺ ) + (Fe ³⁺ ) + (X ²⁺ )} ≦ 0.5, and 0.1 ≦ (X ²⁺ ) / {( ^{^{in 3+) + (Fe 3+)}} + (X 2+)} meets ≦ 0.5, and the oxide sintered body bulk resistance is less 3Emuomegacm.

The oxide sintered body according to claim 1, wherein the relative density is 98% or more.

Trivalent indium ion (In ³⁺ ), trivalent iron ion (Fe ³⁺ ), and divalent X ion (X ²⁺ ) (where X is selected from Cu, Zn and Fe) An oxide semiconductor thin film composed of oxygen ions (O ²⁻ ), trivalent indium ions (In ³⁺ ), trivalent iron ions (Fe ³⁺ ), The atomic ratio of divalent X ions (X ²⁺ ) is 0.2 ≦ (In ³⁺ ) / {(In ³⁺ ) + (Fe ³⁺ ) + (X ²⁺ )} ≦ 0.8, 0.1 ≦ (Fe ³⁺ ) / {(In ³⁺ ) + (Fe ³⁺ ) + (X ²⁺ )} ≦ 0.5, 0.1 ≦ (X ²⁺ ) / {(In ³⁺ ) + (Fe ³⁺⁾ + meets (X ^2+)} ≦ 0.5, and the oxide semiconductor thin film is amorphous.

Oxide semiconductor thin film according to claim 3 carrier concentration is 10 ¹⁶ ~10 ¹⁸ cm ^-3.

The oxide semiconductor thin film according to claim 3 or 4 , wherein the mobility is 1 cm ² / Vs or more.

A thin film transistor comprising the oxide semiconductor thin film according to any one of claims 3 to 5 as an active layer.

An active matrix drive display panel comprising the thin film transistor according to claim 6 .