JP2012049249A - 半導体装置の製造方法 - Google Patents
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
【解決手段】半導体基板の第1の面に活性層を形成し、活性層上に配線層を形成して、配線層を覆うように絶縁層を形成する。そして、絶縁層を介して半導体基板の第1の面と支持基板とを接合し、支持基板に接合された半導体基板を、活性層を第2の面側から覆う所定の厚さの前記半導体基板を残して薄厚化する。薄厚化後の半導体基板の第2の面の外周部および側面に保護膜を形成して、保護膜が形成されていない領域の半導体基板を、活性層が露出するよう除去する。
【選択図】図3
Description
図1は、第1の実施の形態にかかる半導体装置1の断面の概要を示す模式図である。図1に示すように、本実施の形態の半導体装置1はフォトダイオード4やトランジスタ(図示を省略する)が形成された活性層3を備えている。半導体装置1は、薄厚化されており、裏面に照射される光や電子等のエネルギー線を受光しフォトダイオード4に収集する受光面11と、反射防止膜やカラーフィルター層などの光学層(図示を省略する)やマイクロレンズ12と、を有した、いわゆる裏面照射型イメージセンサとして構成されている。また、活性層3の表面には、活性層3と電気接続された配線層5が形成されている。配線層5上には、接合層(絶縁層)6が設けられ、接合層6と支持基板7が接合している。
図4,5,6は、第2の実施の形態にかかる半導体装置の製造方法の一例を示す図である。本実施の形態の半導体装置の構成は、第1の実施の形態の半導体装置の構成と同様である。第1の実施の形態と同一または相当部分については、第1の実施の形態と同一の符号を付して重複する説明を省略する。
図7,8,9は、第3の実施の形態にかかる半導体装置の製造方法の一例を示す図である。本実施の形態の半導体装置の構成は、第1の実施の形態の半導体装置の構成と同様である。第1の実施の形態と同一または相当部分については、第1の実施の形態と同一の符号を付して重複する説明を省略する。
その後、反射防止膜やカラーフィルター層などの光学層(図示を省略する)やマイクロレンズ12が形成され図1に示す半導体装置が得られる。
図10は、第4の実施の形態にかかるカメラモジュールの構成例を示す図である。図10は、第1の実施の形態〜第3の実施の形態のいずれか1つの製造方法により製造された半導体装置1を備えるカメラモジュールの断面の概略を示す模式図である。
Claims (5)
- 半導体基板の第1の面に活性層を形成する第1の工程と、
前記活性層上に配線層を形成する第2の工程と、
前記配線層を覆うように絶縁層を形成する第3の工程と、
前記絶縁層を介して前記半導体基板の前記第1の面と支持基板とを接合する第4の工程と、
前記支持基板に接合された前記半導体基板を、前記活性層を第2の面側から覆う所定の厚さの前記半導体基板を残して薄厚化する第5の工程と、
前記薄厚化後の前記半導体基板の第2の面の外周部および側面に保護膜を形成する第6の工程と、
前記保護膜が形成されていない領域の前記半導体基板を、前記活性層が露出するよう除去する第7の工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記薄厚化後の前記半導体基板の側面と前記支持基板の前記半導体基板側の外周部の一部とを除去することにより前記半導体基板の側面と前記支持基板の外周部とを連通する側壁を形成する第8の工程、
をさらに含み、
前記第6の工程では、前記側壁を形成後の前記半導体基板の第2の面の外周部および側面と、除去されて露出した前記支持基板の外周部の少なくとも一部と、を覆うように保護膜を形成する
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 半導体基板の第1の面に活性層を形成する第1の工程と、
前記活性層上に配線層を形成する第2の工程と、
前記配線層を覆うように絶縁層を形成する第3の工程と、
前記絶縁層を介して前記半導体基板の前記第1の面と支持基板とを接合する第4の工程と、
前記支持基板に接合された前記半導体基板を、前記活性層を第2の面側から覆う所定の厚さの前記半導体基板を残して薄厚化する第5の工程と、
前記薄厚化後の前記半導体基板の側面と前記支持基板の前記半導体基板側の外周部の一部とを除去することにより前記半導体基板の側面と前記支持基板の外周部とを連通する側壁を形成する第6の工程と、
前記側壁を形成後の前記半導体基板の第2の面と前記側壁とを覆う保護膜を形成する第7の工程と、
前記保護膜を形成後の前記半導体基板を第2の面側から薄厚化し、前記保護膜を前記半導体基板の側面を除いて除去する第8の工程と、
前記保護膜が形成されていない領域の前記半導体基板を、前記活性層が露出するよう除去する第9の工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記保護膜が、シリコン窒化膜、シリコン酸窒化膜、有機材料のうち、少なくともいずれか1つで構成される、
ことを特徴とする請求項1、2または3に記載の半導体装置の製造方法。 - 支持基板と、
前記支持基板上に形成された絶縁層と、
前記絶縁層上に形成された活性層と、
前記活性層の外周部と、前記活性層および前記絶縁層の側面と、に形成された残膜と、
を備えることを特徴とする半導体基板。
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JP2010188449A JP5279775B2 (ja) | 2010-08-25 | 2010-08-25 | 半導体装置の製造方法 |
US13/212,644 US8778778B2 (en) | 2010-08-25 | 2011-08-18 | Manufacturing method of semiconductor device, semiconductor substrate, and camera module |
TW100130570A TWI456639B (zh) | 2010-08-25 | 2011-08-25 | 半導體裝置之製造方法、半導體基板及相機模組 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016066787A (ja) * | 2014-09-16 | 2016-04-28 | 株式会社東芝 | 電子デバイスの製造方法 |
WO2016178535A1 (ko) * | 2015-05-04 | 2016-11-10 | 이태복 | 초박막 소자 제조장치 및 제조방법 |
USRE48162E1 (en) | 2015-09-17 | 2020-08-18 | Traeger Pellet Grills, Llc | Grill handle towel bar assembly |
JP2021048303A (ja) * | 2019-09-19 | 2021-03-25 | キオクシア株式会社 | 半導体装置 |
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JP5814805B2 (ja) | 2012-01-18 | 2015-11-17 | 株式会社東芝 | 半導体装置の製造システムおよび製造方法 |
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JP7421292B2 (ja) * | 2019-09-11 | 2024-01-24 | キオクシア株式会社 | 半導体装置の製造方法 |
US11482506B2 (en) * | 2020-03-31 | 2022-10-25 | Taiwan Semiconductor Manufacturing Company Limited | Edge-trimming methods for wafer bonding and dicing |
CN113097134B (zh) * | 2021-04-09 | 2022-07-15 | 广州新视界光电科技有限公司 | 一种阵列基板的制备方法及阵列基板 |
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JP2016066787A (ja) * | 2014-09-16 | 2016-04-28 | 株式会社東芝 | 電子デバイスの製造方法 |
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USRE48162E1 (en) | 2015-09-17 | 2020-08-18 | Traeger Pellet Grills, Llc | Grill handle towel bar assembly |
JP2021048303A (ja) * | 2019-09-19 | 2021-03-25 | キオクシア株式会社 | 半導体装置 |
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US8778778B2 (en) | 2014-07-15 |
JP5279775B2 (ja) | 2013-09-04 |
TW201214540A (en) | 2012-04-01 |
TWI456639B (zh) | 2014-10-11 |
US20120049312A1 (en) | 2012-03-01 |
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