JP2015057853A - ボンディングパッドを有する半導体デバイス及びその製造方法 - Google Patents
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Abstract
【解決手段】 表面側及び裏面側を有するデバイス基板、前記デバイス基板の前記表面側に配置されたシャロートレンチアイソレーション層、前記デバイス基板の前記裏面側上に配置された反射防止コーティング層、前記デバイス基板の前記裏面側の前記反射防止コーティング層上に配置され、前記シャロートレンチアイソレーション層の一部に物理的に接触する第1バッファ層、前記デバイス基板の前記裏面側の前記第1バッファ層上に配置され、前記第1バッファ層と物理的に接触する遮蔽構造、前記デバイス基板の前記表面側に配置され、n層数の金属層を有する相互接続構造及び前記シャロートレンチアイソレーション層と前記相互接続構造を通過して延伸し、前記n層数の金属層の第n番目の金属層に直接接触するボンディングパッドを含む。
【選択図】 図7
Description
102、104、106、108、110、112、114、116 ステップ
200 イメージセンサデバイス
210 デバイス基板
212 表面側
214 裏面側
216 ボンディング領域
217 遮蔽領域
218 放射線検出領域
220 センサ
222 シャロートレンチアイソレーション
230 相互接続構造
232 層間誘電(ILD)層
234、236、238、240 金属間誘電体(IMD)層
242、244、246、248 金属層
250 保護層
260 キャリア基板
262、278、280 厚さ
263 反射防止コーティング
264 バッファ層
270 開口
272 幅
274 ボンディングパッド
276 遮蔽構造
282 保護層
Claims (15)
- 表面側及び裏面側を有するデバイス基板、
前記デバイス基板の前記表面側に配置されたシャロートレンチアイソレーション層、
前記デバイス基板の前記裏面側上に配置された反射防止コーティング層、
前記デバイス基板の前記裏面側の前記反射防止コーティング層上に配置され、前記シャロートレンチアイソレーション層の一部に物理的に接触する第1バッファ層、
前記デバイス基板の前記裏面側の前記第1バッファ層上に配置され、前記第1バッファ層と物理的に接触する遮蔽構造、
前記デバイス基板の前記表面側に配置され、n層数の金属層を有する相互接続構造、及び
前記シャロートレンチアイソレーション層と前記相互接続構造を通過して延伸し、前記n層数の金属層の第n番目の金属層に直接接触するボンディングパッドを含む、
半導体デバイス。 - 前記デバイス基板に配置された放射線検出領域であって、前記デバイス基板の前記裏面側から当該放射線検出領域に向けて投射された放射線を検出することができる放射線検出領域を更に含む、
請求項1に記載の半導体デバイス。 - 前記デバイス基板の前記表面側に配置され、前記n層数の金属層の第n層目の金属層に直接接触する第1保護層、
前記第1保護層に接合されたキャリア基板を更に含む、
請求項2に記載の半導体デバイス。 - 前記デバイス基板の前記裏面側に配置された第2保護層を更に含む、
請求項3に記載の半導体デバイス。 - 前記第1保護層は、酸化ケイ素及び窒化ケイ素から構成されたグループから選択された材料を含む、
請求項3に記載の半導体デバイス。 - 前記遮蔽構造は、前記ボンディングパッドの厚さと実質的に同様の厚さを有する、
請求項1に記載の半導体デバイス。 - 前記反射防止コーティング層は、前記デバイス基板の前記裏面側上に前記ボンディングパッドまで延伸せずに配置され、
前記第1バッファ層は、前記デバイス基板の前記裏面側の前記反射防止コーティング層上に配置され、前記反射防止コーティング層に物理的に接触する、
請求項1に記載の半導体デバイス。 - 前記デバイス基板は、ボンディング領域及び非ボンディング領域を有し、
前記デバイス基板の前記裏面側の前記第1バッファ層上に配置された前記遮蔽構造は、前記非ボンディング領域内に配置され、前記ボンディング領域まで延伸せず、
前記ボンディングパッドは、前記ボンディング領域内に配置され、前記遮蔽構造と間隙を介して非連続的に形成されている、
請求項1に記載の半導体デバイス。 - 半導体デバイスを製作する方法であって、
表面側及び裏面側を有するデバイス基板を提供するステップ、
前記デバイス基板の前記表面側にシャロートレンチアイソレーション層を形成するステップ、
前記デバイス基板の前記表面側にn層数の金属層を有する相互接続構造を形成するステップ、
前記デバイス基板の前記裏面側に前記シャロートレンチアイソレーション層と前記相互接続構造を通過して延伸し、且つ前記n層数の金属層の第n番目の金属層を露出する前記デバイス基板の開口を形成するステップ、
前記デバイス基板の前記表面側に、前記n層数の金属層の前記第n番目の金属層に直接接触する第1保護層を形成するステップ、
前記デバイス基板の裏面側に、前記シャロートレンチアイソレーション層の一部と物理的に接触するバッファ層を形成するステップ、
前記デバイス基板の裏面側の前記開口に、露出された前記n層数の金属層の前記第n番目の金属層に直接接触するボンディングパッドを形成するステップ、
前記デバイス基板の前記裏面側に前記開口を形成する前に、前記デバイス基板の前記裏面側に反射防止コーティング層を形成するステップ、を含み、
前記開口は、前記シャロートレンチアイソレーション層と前記相互接続構造を通過して延伸し、前記n層数の金属層の前記第n番目の金属層を露出し、前記反射防止コーティング層を通過して延伸しない、
方法。 - 前記デバイス基板の前記裏面側に、遮蔽領域のバッファ層上に形成された遮蔽構造を形成するステップを更に含む請求項9に記載の方法。
- 前記デバイス基板の前記表面側に、放射線検出領域に形成されて、前記裏面側から前記放射線検出領域に向けて投射された放射線を検出することができるセンサを形成するステップを更に含む請求項9に記載の方法。
- 前記バッファ層を形成する前に、キャリア基板を前記デバイス基板の前記表面側に接合するステップを更に含む請求項10に記載の方法。
- 前記デバイス基板の前記裏面側に、前記ボンディングパッド及び前記遮蔽構造の上に位置された第2保護層を形成するステップ、
前記ボンディング領域の前記第2保護層をエッチングするステップを更に含む、
請求項10に記載の方法。 - 前記第1保護層を形成するステップは、PECVDプロセスを含む請求項9に記載の方法。
- 前記ボンディングパッドを形成するステップと、前記遮蔽構造を形成するステップは、前記ボンディングパッドの厚さと前記遮蔽構造の厚さが実質的に同じになるように実行される請求項10に記載の方法。
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JP2012256639A (ja) * | 2011-06-07 | 2012-12-27 | Toshiba Corp | 半導体装置の製造方法 |
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