JP2012044108A - 半導体集積回路、該回路を備えるスイッチング電源及び該電源を備える制御システム - Google Patents
半導体集積回路、該回路を備えるスイッチング電源及び該電源を備える制御システム Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
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- 238000001514 detection method Methods 0.000 claims description 4
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0009—Devices or circuits for detecting current in a converter
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Dc-Dc Converters (AREA)
- Control Of Electrical Variables (AREA)
Abstract
【解決手段】入出力を異なる電流値にする入出力比特性を有するカレントミラーを構成する一対のトランジスタ(63,65)と、前記カレントミラーの出力電流に応じて基準電圧を生成する出力トランジスタとを備える半導体集積回路であって、一対のトランジスタ(63,65)のうち前記電流値が小さい方のトランジスタ63側のコレクタ領域85Aの総面積と一対のトランジスタ(63,65)のうち前記電流値が大きい方のトランジスタ65側のコレクタ領域82と88とを合わせた総面積とが等しくなるように構成されたことを特徴とする、半導体集積回路。
【選択図】図6
Description
入出力を異なる電流値にする入出力比特性を有するカレントミラーを構成する一対のトランジスタと、
前記カレントミラーの出力電流に応じて基準電圧を生成する出力トランジスタとを備える半導体集積回路であって、
前記一対のトランジスタのうち前記電流値が小さい方の第1のトランジスタ側のコレクタ領域の総面積と前記一対のトランジスタのうち前記電流値が大きい方の第2のトランジスタ側のコレクタ領域の総面積とが等しくなるように構成されたことを特徴とするものである。
該半導体集積回路と、
前記半導体集積回路の半導体基板に形成された駆動トランジスタによって駆動される誘導素子と、
前記誘導素子に蓄積されたエネルギーが供給される容量素子とを備え、
前記駆動トランジスタが、前記基準電圧と前記容量素子に生ずる出力電圧の帰還電圧とに基づいて、前記誘導素子を駆動することによって、前記出力電圧を一定にするものである。
該スイッチング電源と、
前記出力電圧の異常を検出する異常検出部を有する制御装置とを備えるものである。
9 出力コンデンサ(容量素子)
20 半導体集積回路
24,25 駆動トランジスタ
41,81 P型半導体基板
56,68,69,71,72,94 寄生NPN型バイポーラトランジスタ
100 降圧スイッチングレギュレータ
200 昇圧スイッチングレギュレータ
300 制御装置
400 制御システム
Claims (6)
- 入出力を異なる電流値にする入出力比特性を有するカレントミラーを構成する一対のトランジスタと、
前記カレントミラーの出力電流に応じて基準電圧を生成する出力トランジスタとを備える半導体集積回路であって、
前記一対のトランジスタのうち前記電流値が小さい方の第1のトランジスタ側のコレクタ領域の総面積と前記一対のトランジスタのうち前記電流値が大きい方の第2のトランジスタ側のコレクタ領域の総面積とが等しくなるように構成されたことを特徴とする、半導体集積回路。 - 前記第1のトランジスタのエミッタ領域の総面積と前記第2のトランジスタのエミッタ領域の総面積とが異なる、請求項1に記載の半導体集積回路。
- ベース領域とエミッタ領域とコレクタ領域とが互いに短絡され且つ該コレクタ領域が前記第1のトランジスタのコレクタ領域に短絡された第3のトランジスタを備え、
前記第1のトランジスタ側のコレクタ領域は、前記第1のトランジスタのコレクタ領域と前記第3のトランジスタのコレクタ領域とを合わせた領域である、請求項1又は2に記載の半導体集積回路。 - 請求項1から3のいずれか一項に記載の半導体集積回路と、
前記半導体集積回路の半導体基板に形成された駆動トランジスタによって駆動される誘導素子と、
前記誘導素子に蓄積されたエネルギーが供給される容量素子とを備え、
前記駆動トランジスタが、前記基準電圧と前記容量素子に生ずる出力電圧の帰還電圧とに基づいて、前記誘導素子を駆動することによって、前記出力電圧を一定にする、スイッチング電源。 - 請求項4に記載のスイッチング電源と、
前記出力電圧の異常を検出する異常検出部を有する制御装置とを備える、制御システム。 - 前記制御装置が、マイクロコンピュータである、請求項5に記載の制御システム。
Priority Applications (4)
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JP2010186389A JP2012044108A (ja) | 2010-08-23 | 2010-08-23 | 半導体集積回路、該回路を備えるスイッチング電源及び該電源を備える制御システム |
CN2011102262772A CN102377340A (zh) | 2010-08-23 | 2011-07-18 | 半导体集成电路、包括该电路的开关电源以及包括该电源的控制系统 |
CN201510155020.0A CN104851882B (zh) | 2010-08-23 | 2011-07-18 | 半导体集成电路、包括该电路的开关电源以及包括该电源的控制系统 |
US13/188,744 US8674677B2 (en) | 2010-08-23 | 2011-07-22 | Semiconductor integrated circuit, switching power supply, and control system |
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JP2010186389A JP2012044108A (ja) | 2010-08-23 | 2010-08-23 | 半導体集積回路、該回路を備えるスイッチング電源及び該電源を備える制御システム |
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JP2015012915A Division JP5962788B2 (ja) | 2015-01-27 | 2015-01-27 | 半導体集積回路 |
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JP2019041333A (ja) * | 2017-08-28 | 2019-03-14 | 新日本無線株式会社 | ノイズ誤動作防止回路 |
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JP2002315317A (ja) * | 2001-04-18 | 2002-10-25 | Fuji Electric Co Ltd | Dc/dcコンバータおよびそのスイッチングノイズ低減方法 |
JP2007311448A (ja) * | 2006-05-17 | 2007-11-29 | Renesas Technology Corp | 半導体集積回路装置 |
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JPH07321306A (ja) * | 1994-03-31 | 1995-12-08 | Seiko Instr Inc | 半導体装置およびその製造方法 |
JP3591107B2 (ja) * | 1996-01-19 | 2004-11-17 | 富士通株式会社 | 電源降圧回路及び半導体装置 |
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- 2010-08-23 JP JP2010186389A patent/JP2012044108A/ja active Pending
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2011
- 2011-07-18 CN CN201510155020.0A patent/CN104851882B/zh active Active
- 2011-07-18 CN CN2011102262772A patent/CN102377340A/zh active Pending
- 2011-07-22 US US13/188,744 patent/US8674677B2/en active Active
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JP2002191171A (ja) * | 2000-12-21 | 2002-07-05 | Kenwood Corp | 電源装置及び電力供給方法 |
JP2002315317A (ja) * | 2001-04-18 | 2002-10-25 | Fuji Electric Co Ltd | Dc/dcコンバータおよびそのスイッチングノイズ低減方法 |
JP2007311448A (ja) * | 2006-05-17 | 2007-11-29 | Renesas Technology Corp | 半導体集積回路装置 |
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JP2019041333A (ja) * | 2017-08-28 | 2019-03-14 | 新日本無線株式会社 | ノイズ誤動作防止回路 |
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CN102377340A (zh) | 2012-03-14 |
US20120043952A1 (en) | 2012-02-23 |
CN104851882B (zh) | 2018-05-29 |
US8674677B2 (en) | 2014-03-18 |
CN104851882A (zh) | 2015-08-19 |
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