JP2012004274A - 炭化珪素半導体の洗浄方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 90
- 238000004140 cleaning Methods 0.000 title claims abstract description 89
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 210
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 210
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 100
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- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 26
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 23
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 9
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 6
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- 229910017855 NH 4 F Inorganic materials 0.000 description 1
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
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- 239000011574 phosphorus Substances 0.000 description 1
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- 230000001737 promoting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000005092 sublimation method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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Abstract
【解決手段】SiC半導体の洗浄方法は、SiC半導体の表面に酸化膜を形成する工程と、酸化膜を除去する工程とを備え、酸化膜を形成する工程では、30ppm以上の濃度を有するオゾン水を用いて酸化膜を形成する。形成する工程は、SiC半導体の表面およびオゾン水の少なくとも一方を加熱する工程を含むことが好ましい。
【選択図】図2
Description
図1は、本発明の実施の形態1において準備するSiC半導体を概略的に示す側面図である。図2は、本発明の実施の形態1におけるSiC半導体の洗浄方法を示すフローチャートである。図1および図2を参照して、本発明の一実施の形態のSiC半導体の洗浄方法を説明する。本実施の形態では、SiC半導体として、図1に示すSiC基板2を洗浄する方法を説明する。
図4は、本発明の実施の形態1の変形例における酸化膜の形成に使用可能な装置を概略的に示す模式図である。図4を参照して、変形例のSiC基板の洗浄方法について説明する。変形例におけるSiC基板の洗浄方法は、図3に示すSiC半導体洗浄装置の代わりに図4に示すSiC半導体洗浄装置を用いる点において異なる。
図5は、本発明の実施の形態2におけるSiC半導体を概略的に示す断面図である。図6は、本発明の実施の形態2におけるSiC半導体の洗浄方法を示すフローチャートである。図7は、本発明の実施の形態におけるSiC半導体の洗浄方法の一工程を概略的に示す断面図である。図2、図5〜図7を参照して、本実施の形態におけるSiC半導体の洗浄方法について説明する。本実施の形態では、SiC半導体として、図5に示すように、SiC基板2と、SiC基板2上に形成されたエピタキシャル層120とを含むエピタキシャルウエハ100を洗浄する方法を説明する。
本発明例1のSiC半導体として、図8に示すエピタキシャルウエハ130を洗浄した。なお、図8は、本発明例1、2および比較例1で洗浄するエピタキシャルウエハ130を概略的に示す断面図である。
次に、30ppmの濃度を有するオゾンを含む超純水を25℃に加熱して、図4に示す枚葉式のSiC半導体洗浄装置を用いて、エピタキシャルウエハ130の表面130aに1slmの流量で供給した。このとき、エピタキシャルウエハ100の回転速度は200rpmであった。これにより、エピタキシャルウエハ130の表面130aに酸化膜を形成できる(ステップS2)ことを確認した。
本発明例2は、基本的には本発明例1と同様であったが、酸化膜を形成するステップS2において80ppmのオゾン水を50℃に加熱してエピタキシャルウエハ130の表面130aに供給した点において異なっていた。この場合にも、表面130aに酸化膜が形成されていたことを確認した。また、ステップS3においても、表面130aに形成された酸化膜を除去したことを確認した。
比較例1は、基本的には本発明例1と同様であったが、ステップS2において、20ppmのオゾン水をエピタキシャルウエハ130の表面130aに供給した点において異なっていた。この場合には、表面130aに酸化膜が形成されないことを確認した。このため、比較例1の洗浄後の表面130aは、不純物およびパーティクルがほとんど低減されていなかった。
Claims (7)
- 炭化珪素半導体の表面に酸化膜を形成する工程と、
前記酸化膜を除去する工程とを備え、
前記形成する工程では、30ppm以上の濃度を有するオゾン水を用いて前記酸化膜を形成する、炭化珪素半導体の洗浄方法。 - 前記形成する工程は、前記炭化珪素半導体の前記表面および前記オゾン水の少なくとも一方を加熱する工程を含む、請求項1に記載の炭化珪素半導体の洗浄方法。
- 前記加熱する工程は、前記オゾン水を25℃以上90℃以下に加熱する工程を含む、請求項2に記載の炭化珪素半導体の洗浄方法。
- 前記加熱する工程は、前記炭化珪素半導体の前記表面を25℃以上90℃以下に加熱する工程を含む、請求項2または3に記載の炭化珪素半導体の洗浄方法。
- 前記除去する工程では、フッ化水素を用いて前記酸化膜を除去する、請求項1〜4のいずれか1項に記載の炭化珪素半導体の洗浄方法。
- 前記形成する工程と、前記除去する工程とを、同時に行なう、請求項1〜5のいずれか1項に記載の炭化珪素半導体の洗浄方法。
- 前記形成する工程は、前記オゾン水に炭酸ガスを混合する工程を含む、請求項1〜6のいずれか1項に記載の炭化珪素半導体の洗浄方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
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JP2010136871A JP5540919B2 (ja) | 2010-06-16 | 2010-06-16 | 炭化珪素半導体の洗浄方法 |
PCT/JP2011/054275 WO2011158529A1 (ja) | 2010-06-16 | 2011-02-25 | 炭化珪素半導体の洗浄方法 |
KR1020127005777A KR20130076787A (ko) | 2010-06-16 | 2011-02-25 | 탄화규소 반도체의 세정 방법 |
EP11795437.0A EP2584591A1 (en) | 2010-06-16 | 2011-02-25 | Method for cleaning silicon carbide semiconductor |
US13/390,869 US8785301B2 (en) | 2010-06-16 | 2011-02-25 | Method of cleaning silicon carbide semiconductor |
CA2771795A CA2771795A1 (en) | 2010-06-16 | 2011-02-25 | Method of cleaning silicon carbide semiconductor |
CN2011800040605A CN102549723A (zh) | 2010-06-16 | 2011-02-25 | 碳化硅半导体的清洗方法 |
TW100118348A TW201203331A (en) | 2010-06-16 | 2011-05-25 | Method for cleaning silicon carbide semiconductor |
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JP2010136871A JP5540919B2 (ja) | 2010-06-16 | 2010-06-16 | 炭化珪素半導体の洗浄方法 |
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JP5540919B2 JP5540919B2 (ja) | 2014-07-02 |
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US (1) | US8785301B2 (ja) |
EP (1) | EP2584591A1 (ja) |
JP (1) | JP5540919B2 (ja) |
KR (1) | KR20130076787A (ja) |
CN (1) | CN102549723A (ja) |
CA (1) | CA2771795A1 (ja) |
TW (1) | TW201203331A (ja) |
WO (1) | WO2011158529A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2017173461A (ja) * | 2016-03-22 | 2017-09-28 | アルバック成膜株式会社 | 位相シフトマスクブランクスの洗浄装置、位相シフトマスクブランクスの製造方法 |
WO2019013524A1 (ko) * | 2017-07-11 | 2019-01-17 | 주식회사 유진테크 | 기판 처리 장치 |
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JP6458677B2 (ja) * | 2015-08-05 | 2019-01-30 | 三菱電機株式会社 | 炭化珪素エピタキシャルウエハの製造方法及び製造装置 |
KR101726804B1 (ko) * | 2015-12-17 | 2017-04-13 | 주식회사 싸이노스 | 반도체 제조공정에 사용하는 SiC 부재의 세정방법 |
CN107154339A (zh) * | 2016-03-03 | 2017-09-12 | 中国科学院微电子研究所 | 一种利用臭氧清洗基片的方法及装置 |
CN107717640A (zh) * | 2016-08-10 | 2018-02-23 | 云南民族大学 | 一种超声波辅助研磨抛光的方法 |
JP7300433B2 (ja) * | 2020-10-28 | 2023-06-29 | 信越半導体株式会社 | エピタキシャルウェーハの洗浄方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000331979A (ja) * | 1999-05-21 | 2000-11-30 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP2001009394A (ja) * | 1999-06-29 | 2001-01-16 | Bridgestone Corp | 炭化ケイ素焼結体の湿式洗浄方法 |
JP2002329694A (ja) * | 2001-04-26 | 2002-11-15 | Sony Corp | 基板処理装置および基板処理方法、ならびに基板保持用回転部材 |
JP2008108803A (ja) * | 2006-10-24 | 2008-05-08 | Matsushita Electric Ind Co Ltd | 半導体装置の洗浄方法 |
JP2010092938A (ja) * | 2008-10-03 | 2010-04-22 | Sumco Techxiv株式会社 | 半導体ウェハの洗浄方法、および、半導体ウェハ |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3261683B2 (ja) | 1991-05-31 | 2002-03-04 | 忠弘 大見 | 半導体の洗浄方法及び洗浄装置 |
JPH06314679A (ja) | 1993-04-30 | 1994-11-08 | Sony Corp | 半導体基板の洗浄方法 |
WO1998001896A1 (fr) * | 1996-07-03 | 1998-01-15 | Ultraclean Technology Research Institute | Appareil de lavage et procede de lavage |
US7264680B2 (en) * | 1997-05-09 | 2007-09-04 | Semitool, Inc. | Process and apparatus for treating a workpiece using ozone |
US6743301B2 (en) * | 1999-12-24 | 2004-06-01 | mFSI Ltd. | Substrate treatment process and apparatus |
JP4221736B2 (ja) | 2000-07-18 | 2009-02-12 | 株式会社ササクラ | フォトレジスト膜除去方法及び装置 |
JP4325095B2 (ja) * | 2000-09-08 | 2009-09-02 | 株式会社デンソー | SiC素子の製造方法 |
JP2002261062A (ja) * | 2001-03-05 | 2002-09-13 | Texas Instr Japan Ltd | 半導体ウェハ上の粒子を除去する方法及び装置 |
US6837944B2 (en) * | 2001-07-25 | 2005-01-04 | Akrion Llc | Cleaning and drying method and apparatus |
US6802911B2 (en) * | 2001-09-19 | 2004-10-12 | Samsung Electronics Co., Ltd. | Method for cleaning damaged layers and polymer residue from semiconductor device |
JP3604018B2 (ja) * | 2002-05-24 | 2004-12-22 | 独立行政法人科学技術振興機構 | シリコン基材表面の二酸化シリコン膜形成方法、半導体基材表面の酸化膜形成方法、及び半導体装置の製造方法 |
CA2451887A1 (en) * | 2002-12-02 | 2004-06-02 | Tadahiro Ohmi | Semiconductor device and method of manufacturing the same |
KR20060061343A (ko) * | 2003-07-31 | 2006-06-07 | 에프 에스 아이 인터내셔날,인코포레이티드 | 균일성이 높은 산화물층, 특히 초박층의 성장제어 |
KR101232249B1 (ko) * | 2004-08-10 | 2013-02-12 | 간또 가가꾸 가부시끼가이샤 | 반도체 기판 세정액 및 반도체 기판 세정방법 |
US7572741B2 (en) * | 2005-09-16 | 2009-08-11 | Cree, Inc. | Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen |
US8734661B2 (en) * | 2007-10-15 | 2014-05-27 | Ebara Corporation | Flattening method and flattening apparatus |
JP2009194216A (ja) * | 2008-02-15 | 2009-08-27 | Hitachi Ltd | 半導体装置の製造方法 |
TWI501308B (zh) | 2008-10-03 | 2015-09-21 | Sumco Techxiv Corp | 半導體晶圓的洗淨方法及半導體晶圓 |
JP5141541B2 (ja) * | 2008-12-24 | 2013-02-13 | 株式会社Sumco | エピタキシャルウェーハの製造方法 |
-
2010
- 2010-06-16 JP JP2010136871A patent/JP5540919B2/ja not_active Expired - Fee Related
-
2011
- 2011-02-25 WO PCT/JP2011/054275 patent/WO2011158529A1/ja active Application Filing
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- 2011-02-25 EP EP11795437.0A patent/EP2584591A1/en not_active Withdrawn
- 2011-02-25 CN CN2011800040605A patent/CN102549723A/zh active Pending
- 2011-02-25 US US13/390,869 patent/US8785301B2/en not_active Expired - Fee Related
- 2011-05-25 TW TW100118348A patent/TW201203331A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000331979A (ja) * | 1999-05-21 | 2000-11-30 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP2001009394A (ja) * | 1999-06-29 | 2001-01-16 | Bridgestone Corp | 炭化ケイ素焼結体の湿式洗浄方法 |
JP2002329694A (ja) * | 2001-04-26 | 2002-11-15 | Sony Corp | 基板処理装置および基板処理方法、ならびに基板保持用回転部材 |
JP2008108803A (ja) * | 2006-10-24 | 2008-05-08 | Matsushita Electric Ind Co Ltd | 半導体装置の洗浄方法 |
JP2010092938A (ja) * | 2008-10-03 | 2010-04-22 | Sumco Techxiv株式会社 | 半導体ウェハの洗浄方法、および、半導体ウェハ |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017173461A (ja) * | 2016-03-22 | 2017-09-28 | アルバック成膜株式会社 | 位相シフトマスクブランクスの洗浄装置、位相シフトマスクブランクスの製造方法 |
WO2019013524A1 (ko) * | 2017-07-11 | 2019-01-17 | 주식회사 유진테크 | 기판 처리 장치 |
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WO2011158529A1 (ja) | 2011-12-22 |
TW201203331A (en) | 2012-01-16 |
US20120149175A1 (en) | 2012-06-14 |
CA2771795A1 (en) | 2011-12-22 |
US8785301B2 (en) | 2014-07-22 |
CN102549723A (zh) | 2012-07-04 |
JP5540919B2 (ja) | 2014-07-02 |
EP2584591A1 (en) | 2013-04-24 |
KR20130076787A (ko) | 2013-07-08 |
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