JP2011527828A5 - - Google Patents

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Publication number
JP2011527828A5
JP2011527828A5 JP2011517412A JP2011517412A JP2011527828A5 JP 2011527828 A5 JP2011527828 A5 JP 2011527828A5 JP 2011517412 A JP2011517412 A JP 2011517412A JP 2011517412 A JP2011517412 A JP 2011517412A JP 2011527828 A5 JP2011527828 A5 JP 2011527828A5
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JP
Japan
Prior art keywords
color filter
filter array
oxide film
forming
alignment mark
Prior art date
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Application number
JP2011517412A
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English (en)
Japanese (ja)
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JP5427234B2 (ja
JP2011527828A (ja
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Publication date
Priority claimed from US12/169,709 external-priority patent/US8017426B2/en
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Publication of JP2011527828A publication Critical patent/JP2011527828A/ja
Publication of JP2011527828A5 publication Critical patent/JP2011527828A5/ja
Application granted granted Critical
Publication of JP5427234B2 publication Critical patent/JP5427234B2/ja
Active legal-status Critical Current
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JP2011517412A 2008-07-09 2009-07-07 イメージセンサにおけるカラーフィルタアレイの位置合わせマークの生成 Active JP5427234B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/169,709 2008-07-09
US12/169,709 US8017426B2 (en) 2008-07-09 2008-07-09 Color filter array alignment mark formation in backside illuminated image sensors
PCT/US2009/003974 WO2010005555A1 (en) 2008-07-09 2009-07-07 Cfa alignment mark formation in image sensors

Publications (3)

Publication Number Publication Date
JP2011527828A JP2011527828A (ja) 2011-11-04
JP2011527828A5 true JP2011527828A5 (enExample) 2012-05-17
JP5427234B2 JP5427234B2 (ja) 2014-02-26

Family

ID=41061313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011517412A Active JP5427234B2 (ja) 2008-07-09 2009-07-07 イメージセンサにおけるカラーフィルタアレイの位置合わせマークの生成

Country Status (7)

Country Link
US (2) US8017426B2 (enExample)
EP (1) EP2304797B1 (enExample)
JP (1) JP5427234B2 (enExample)
KR (1) KR101351145B1 (enExample)
CN (1) CN102077349A (enExample)
TW (1) TWI463645B (enExample)
WO (1) WO2010005555A1 (enExample)

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US8139130B2 (en) 2005-07-28 2012-03-20 Omnivision Technologies, Inc. Image sensor with improved light sensitivity
US8274715B2 (en) 2005-07-28 2012-09-25 Omnivision Technologies, Inc. Processing color and panchromatic pixels
US7916362B2 (en) 2006-05-22 2011-03-29 Eastman Kodak Company Image sensor with improved light sensitivity
US8031258B2 (en) 2006-10-04 2011-10-04 Omnivision Technologies, Inc. Providing multiple video signals from single sensor
US8896712B2 (en) * 2007-07-20 2014-11-25 Omnivision Technologies, Inc. Determining and correcting for imaging device motion during an exposure
US8350952B2 (en) * 2008-06-04 2013-01-08 Omnivision Technologies, Inc. Image sensors with improved angle response
US7859033B2 (en) 2008-07-09 2010-12-28 Eastman Kodak Company Wafer level processing for backside illuminated sensors
US7915067B2 (en) * 2008-07-09 2011-03-29 Eastman Kodak Company Backside illuminated image sensor with reduced dark current
US20100006908A1 (en) * 2008-07-09 2010-01-14 Brady Frederick T Backside illuminated image sensor with shallow backside trench for photodiode isolation
US8224082B2 (en) * 2009-03-10 2012-07-17 Omnivision Technologies, Inc. CFA image with synthetic panchromatic image
US8068153B2 (en) * 2009-03-27 2011-11-29 Omnivision Technologies, Inc. Producing full-color image using CFA image
US8045024B2 (en) * 2009-04-15 2011-10-25 Omnivision Technologies, Inc. Producing full-color image with reduced motion blur
US8203633B2 (en) * 2009-05-27 2012-06-19 Omnivision Technologies, Inc. Four-channel color filter array pattern
US8237831B2 (en) * 2009-05-28 2012-08-07 Omnivision Technologies, Inc. Four-channel color filter array interpolation
US8125546B2 (en) * 2009-06-05 2012-02-28 Omnivision Technologies, Inc. Color filter array pattern having four-channels
US8253832B2 (en) * 2009-06-09 2012-08-28 Omnivision Technologies, Inc. Interpolation for four-channel color filter array
US8389922B2 (en) * 2010-08-04 2013-03-05 Himax Imaging, Inc. Sensing Devices and Manufacturing Methods Therefor
US8946083B2 (en) * 2011-06-24 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ formation of silicon and tantalum containing barrier
US8846494B2 (en) 2011-07-07 2014-09-30 Aptina Imaging Corporation Alignment marks and alignment methods for aligning backside components to frontside components in integrated circuits
US9269743B2 (en) 2013-11-21 2016-02-23 Semiconductor Components Industries, Llc Methods of forming imaging device layers using carrier substrates
FR3050831B1 (fr) * 2016-04-29 2018-04-27 Silios Technologies Dispositif d'imagerie multispectrale
US10873362B2 (en) 2016-08-16 2020-12-22 Ipcom Gmbh & Co. Kg Reuse of transmission resources for device to device communication
KR102530072B1 (ko) 2018-01-10 2023-05-08 삼성전자주식회사 이미지 센서, 촬상 장치 및 이미지 센서 칩 패키지의 제조 방법
WO2021189484A1 (zh) * 2020-03-27 2021-09-30 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置

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JPS63108717A (ja) * 1986-10-27 1988-05-13 Nec Corp 半導体装置の製造方法
US5227313A (en) 1992-07-24 1993-07-13 Eastman Kodak Company Process for making backside illuminated image sensors
US5244817A (en) 1992-08-03 1993-09-14 Eastman Kodak Company Method of making backside illuminated image sensors
US5786236A (en) 1996-03-29 1998-07-28 Eastman Kodak Company Backside thinning using ion-beam figuring
US6429036B1 (en) 1999-01-14 2002-08-06 Micron Technology, Inc. Backside illumination of CMOS image sensor
US6168965B1 (en) 1999-08-12 2001-01-02 Tower Semiconductor Ltd. Method for making backside illuminated image sensor
JP2005019898A (ja) * 2003-06-27 2005-01-20 Denso Corp 半導体基板およびその製造方法
JP4046069B2 (ja) 2003-11-17 2008-02-13 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
JP2005268738A (ja) * 2004-02-17 2005-09-29 Sony Corp 固体撮像素子とその製造方法、及び半導体集積回路装置とその製造方法
US7425460B2 (en) 2004-09-17 2008-09-16 California Institute Of Technology Method for implementation of back-illuminated CMOS or CCD imagers
US7087532B2 (en) * 2004-09-30 2006-08-08 International Business Machines Corporation Formation of controlled sublithographic structures
JP4123446B2 (ja) * 2005-08-03 2008-07-23 ソニー株式会社 固体撮像素子の製造方法
US7315014B2 (en) 2005-08-30 2008-01-01 Micron Technology, Inc. Image sensors with optical trench
US20070052050A1 (en) 2005-09-07 2007-03-08 Bart Dierickx Backside thinned image sensor with integrated lens stack
US7586139B2 (en) 2006-02-17 2009-09-08 International Business Machines Corporation Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor
KR100791336B1 (ko) 2006-08-10 2008-01-07 삼성전자주식회사 이미지 센서 제조 방법
JP4816601B2 (ja) * 2007-09-07 2011-11-16 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
US7859033B2 (en) * 2008-07-09 2010-12-28 Eastman Kodak Company Wafer level processing for backside illuminated sensors
US20100006908A1 (en) * 2008-07-09 2010-01-14 Brady Frederick T Backside illuminated image sensor with shallow backside trench for photodiode isolation

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