JP5427234B2 - イメージセンサにおけるカラーフィルタアレイの位置合わせマークの生成 - Google Patents

イメージセンサにおけるカラーフィルタアレイの位置合わせマークの生成 Download PDF

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JP5427234B2
JP5427234B2 JP2011517412A JP2011517412A JP5427234B2 JP 5427234 B2 JP5427234 B2 JP 5427234B2 JP 2011517412 A JP2011517412 A JP 2011517412A JP 2011517412 A JP2011517412 A JP 2011517412A JP 5427234 B2 JP5427234 B2 JP 5427234B2
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image sensor
color filter
wafer
alignment mark
filter array
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JP2011527828A (ja
JP2011527828A5 (enExample
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ティー ブラディー，フレデリック
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オムニヴィジョン テクノロジーズ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2011517412A 2008-07-09 2009-07-07 イメージセンサにおけるカラーフィルタアレイの位置合わせマークの生成 Active JP5427234B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/169,709 2008-07-09
US12/169,709 US8017426B2 (en) 2008-07-09 2008-07-09 Color filter array alignment mark formation in backside illuminated image sensors
PCT/US2009/003974 WO2010005555A1 (en) 2008-07-09 2009-07-07 Cfa alignment mark formation in image sensors

Publications (3)

Publication Number Publication Date
JP2011527828A JP2011527828A (ja) 2011-11-04
JP2011527828A5 JP2011527828A5 (enExample) 2012-05-17
JP5427234B2 true JP5427234B2 (ja) 2014-02-26

Family

ID=41061313

Family Applications (1)

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JP2011517412A Active JP5427234B2 (ja) 2008-07-09 2009-07-07 イメージセンサにおけるカラーフィルタアレイの位置合わせマークの生成

Country Status (7)

Country Link
US (2) US8017426B2 (enExample)
EP (1) EP2304797B1 (enExample)
JP (1) JP5427234B2 (enExample)
KR (1) KR101351145B1 (enExample)
CN (1) CN102077349A (enExample)
TW (1) TWI463645B (enExample)
WO (1) WO2010005555A1 (enExample)

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US7916362B2 (en) * 2006-05-22 2011-03-29 Eastman Kodak Company Image sensor with improved light sensitivity
US8031258B2 (en) 2006-10-04 2011-10-04 Omnivision Technologies, Inc. Providing multiple video signals from single sensor
US8896712B2 (en) * 2007-07-20 2014-11-25 Omnivision Technologies, Inc. Determining and correcting for imaging device motion during an exposure
US8350952B2 (en) * 2008-06-04 2013-01-08 Omnivision Technologies, Inc. Image sensors with improved angle response
US20100006908A1 (en) * 2008-07-09 2010-01-14 Brady Frederick T Backside illuminated image sensor with shallow backside trench for photodiode isolation
US7915067B2 (en) * 2008-07-09 2011-03-29 Eastman Kodak Company Backside illuminated image sensor with reduced dark current
US7859033B2 (en) 2008-07-09 2010-12-28 Eastman Kodak Company Wafer level processing for backside illuminated sensors
US8224082B2 (en) * 2009-03-10 2012-07-17 Omnivision Technologies, Inc. CFA image with synthetic panchromatic image
US8068153B2 (en) * 2009-03-27 2011-11-29 Omnivision Technologies, Inc. Producing full-color image using CFA image
US8045024B2 (en) * 2009-04-15 2011-10-25 Omnivision Technologies, Inc. Producing full-color image with reduced motion blur
US8203633B2 (en) * 2009-05-27 2012-06-19 Omnivision Technologies, Inc. Four-channel color filter array pattern
US8237831B2 (en) * 2009-05-28 2012-08-07 Omnivision Technologies, Inc. Four-channel color filter array interpolation
US8125546B2 (en) * 2009-06-05 2012-02-28 Omnivision Technologies, Inc. Color filter array pattern having four-channels
US8253832B2 (en) * 2009-06-09 2012-08-28 Omnivision Technologies, Inc. Interpolation for four-channel color filter array
US8389922B2 (en) * 2010-08-04 2013-03-05 Himax Imaging, Inc. Sensing Devices and Manufacturing Methods Therefor
US8946083B2 (en) * 2011-06-24 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ formation of silicon and tantalum containing barrier
US8846494B2 (en) 2011-07-07 2014-09-30 Aptina Imaging Corporation Alignment marks and alignment methods for aligning backside components to frontside components in integrated circuits
US9269743B2 (en) 2013-11-21 2016-02-23 Semiconductor Components Industries, Llc Methods of forming imaging device layers using carrier substrates
FR3050831B1 (fr) * 2016-04-29 2018-04-27 Silios Technologies Dispositif d'imagerie multispectrale
BR112019000609A2 (pt) 2016-08-16 2019-04-30 Ipcom Gmbh & Co Kg método para determinar uma potência de transmissão para transmissões dispositivo a dispositivo, d2d
KR102530072B1 (ko) 2018-01-10 2023-05-08 삼성전자주식회사 이미지 센서, 촬상 장치 및 이미지 센서 칩 패키지의 제조 방법
WO2021189484A1 (zh) * 2020-03-27 2021-09-30 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置

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US5227313A (en) * 1992-07-24 1993-07-13 Eastman Kodak Company Process for making backside illuminated image sensors
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JP2005019898A (ja) * 2003-06-27 2005-01-20 Denso Corp 半導体基板およびその製造方法
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US20100006908A1 (en) * 2008-07-09 2010-01-14 Brady Frederick T Backside illuminated image sensor with shallow backside trench for photodiode isolation
US7859033B2 (en) * 2008-07-09 2010-12-28 Eastman Kodak Company Wafer level processing for backside illuminated sensors

Also Published As

Publication number Publication date
JP2011527828A (ja) 2011-11-04
WO2010005555A1 (en) 2010-01-14
EP2304797A1 (en) 2011-04-06
KR20110028649A (ko) 2011-03-21
TW201007937A (en) 2010-02-16
US8017426B2 (en) 2011-09-13
KR101351145B1 (ko) 2014-01-14
US20110285880A1 (en) 2011-11-24
TWI463645B (zh) 2014-12-01
EP2304797B1 (en) 2012-12-12
CN102077349A (zh) 2011-05-25
US20100006909A1 (en) 2010-01-14

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