KR101351145B1 - 컬러 필터 어레이 정렬 마크 형성 방법, 이미지 센서 및 디지털 이미징 디바이스 - Google Patents

컬러 필터 어레이 정렬 마크 형성 방법, 이미지 센서 및 디지털 이미징 디바이스 Download PDF

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KR101351145B1
KR101351145B1 KR1020117003078A KR20117003078A KR101351145B1 KR 101351145 B1 KR101351145 B1 KR 101351145B1 KR 1020117003078 A KR1020117003078 A KR 1020117003078A KR 20117003078 A KR20117003078 A KR 20117003078A KR 101351145 B1 KR101351145 B1 KR 101351145B1
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color filter
alignment mark
filter array
layer
image sensor
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KR20110028649A (ko
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프레드릭 티 브래디
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옴니비전 테크놀러지즈 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020117003078A 2008-07-09 2009-07-07 컬러 필터 어레이 정렬 마크 형성 방법, 이미지 센서 및 디지털 이미징 디바이스 Active KR101351145B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/169,709 2008-07-09
US12/169,709 US8017426B2 (en) 2008-07-09 2008-07-09 Color filter array alignment mark formation in backside illuminated image sensors
PCT/US2009/003974 WO2010005555A1 (en) 2008-07-09 2009-07-07 Cfa alignment mark formation in image sensors

Publications (2)

Publication Number Publication Date
KR20110028649A KR20110028649A (ko) 2011-03-21
KR101351145B1 true KR101351145B1 (ko) 2014-01-14

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KR1020117003078A Active KR101351145B1 (ko) 2008-07-09 2009-07-07 컬러 필터 어레이 정렬 마크 형성 방법, 이미지 센서 및 디지털 이미징 디바이스

Country Status (7)

Country Link
US (2) US8017426B2 (enExample)
EP (1) EP2304797B1 (enExample)
JP (1) JP5427234B2 (enExample)
KR (1) KR101351145B1 (enExample)
CN (1) CN102077349A (enExample)
TW (1) TWI463645B (enExample)
WO (1) WO2010005555A1 (enExample)

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US8139130B2 (en) 2005-07-28 2012-03-20 Omnivision Technologies, Inc. Image sensor with improved light sensitivity
US8274715B2 (en) 2005-07-28 2012-09-25 Omnivision Technologies, Inc. Processing color and panchromatic pixels
US7916362B2 (en) * 2006-05-22 2011-03-29 Eastman Kodak Company Image sensor with improved light sensitivity
US8031258B2 (en) 2006-10-04 2011-10-04 Omnivision Technologies, Inc. Providing multiple video signals from single sensor
US8896712B2 (en) * 2007-07-20 2014-11-25 Omnivision Technologies, Inc. Determining and correcting for imaging device motion during an exposure
US8350952B2 (en) * 2008-06-04 2013-01-08 Omnivision Technologies, Inc. Image sensors with improved angle response
US20100006908A1 (en) * 2008-07-09 2010-01-14 Brady Frederick T Backside illuminated image sensor with shallow backside trench for photodiode isolation
US7915067B2 (en) * 2008-07-09 2011-03-29 Eastman Kodak Company Backside illuminated image sensor with reduced dark current
US7859033B2 (en) 2008-07-09 2010-12-28 Eastman Kodak Company Wafer level processing for backside illuminated sensors
US8224082B2 (en) * 2009-03-10 2012-07-17 Omnivision Technologies, Inc. CFA image with synthetic panchromatic image
US8068153B2 (en) * 2009-03-27 2011-11-29 Omnivision Technologies, Inc. Producing full-color image using CFA image
US8045024B2 (en) * 2009-04-15 2011-10-25 Omnivision Technologies, Inc. Producing full-color image with reduced motion blur
US8203633B2 (en) * 2009-05-27 2012-06-19 Omnivision Technologies, Inc. Four-channel color filter array pattern
US8237831B2 (en) * 2009-05-28 2012-08-07 Omnivision Technologies, Inc. Four-channel color filter array interpolation
US8125546B2 (en) * 2009-06-05 2012-02-28 Omnivision Technologies, Inc. Color filter array pattern having four-channels
US8253832B2 (en) * 2009-06-09 2012-08-28 Omnivision Technologies, Inc. Interpolation for four-channel color filter array
US8389922B2 (en) * 2010-08-04 2013-03-05 Himax Imaging, Inc. Sensing Devices and Manufacturing Methods Therefor
US8946083B2 (en) * 2011-06-24 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ formation of silicon and tantalum containing barrier
US8846494B2 (en) 2011-07-07 2014-09-30 Aptina Imaging Corporation Alignment marks and alignment methods for aligning backside components to frontside components in integrated circuits
US9269743B2 (en) 2013-11-21 2016-02-23 Semiconductor Components Industries, Llc Methods of forming imaging device layers using carrier substrates
FR3050831B1 (fr) * 2016-04-29 2018-04-27 Silios Technologies Dispositif d'imagerie multispectrale
BR112019000609A2 (pt) 2016-08-16 2019-04-30 Ipcom Gmbh & Co Kg método para determinar uma potência de transmissão para transmissões dispositivo a dispositivo, d2d
KR102530072B1 (ko) 2018-01-10 2023-05-08 삼성전자주식회사 이미지 센서, 촬상 장치 및 이미지 센서 칩 패키지의 제조 방법
WO2021189484A1 (zh) * 2020-03-27 2021-09-30 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置

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JP2005268738A (ja) * 2004-02-17 2005-09-29 Sony Corp 固体撮像素子とその製造方法、及び半導体集積回路装置とその製造方法
KR100791336B1 (ko) 2006-08-10 2008-01-07 삼성전자주식회사 이미지 센서 제조 방법

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JP2005268738A (ja) * 2004-02-17 2005-09-29 Sony Corp 固体撮像素子とその製造方法、及び半導体集積回路装置とその製造方法
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Also Published As

Publication number Publication date
JP2011527828A (ja) 2011-11-04
WO2010005555A1 (en) 2010-01-14
EP2304797A1 (en) 2011-04-06
KR20110028649A (ko) 2011-03-21
TW201007937A (en) 2010-02-16
JP5427234B2 (ja) 2014-02-26
US8017426B2 (en) 2011-09-13
US20110285880A1 (en) 2011-11-24
TWI463645B (zh) 2014-12-01
EP2304797B1 (en) 2012-12-12
CN102077349A (zh) 2011-05-25
US20100006909A1 (en) 2010-01-14

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