CN102077349A - 图像传感器中的滤色器阵列对准标记形成 - Google Patents

图像传感器中的滤色器阵列对准标记形成 Download PDF

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Publication number
CN102077349A
CN102077349A CN2009801248622A CN200980124862A CN102077349A CN 102077349 A CN102077349 A CN 102077349A CN 2009801248622 A CN2009801248622 A CN 2009801248622A CN 200980124862 A CN200980124862 A CN 200980124862A CN 102077349 A CN102077349 A CN 102077349A
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CN
China
Prior art keywords
layer
color filter
sensor
filter array
image sensor
Prior art date
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Pending
Application number
CN2009801248622A
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English (en)
Chinese (zh)
Inventor
弗雷德里克·T·布雷迪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omnivision Technologies Inc
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of CN102077349A publication Critical patent/CN102077349A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN2009801248622A 2008-07-09 2009-07-07 图像传感器中的滤色器阵列对准标记形成 Pending CN102077349A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/169,709 2008-07-09
US12/169,709 US8017426B2 (en) 2008-07-09 2008-07-09 Color filter array alignment mark formation in backside illuminated image sensors
PCT/US2009/003974 WO2010005555A1 (en) 2008-07-09 2009-07-07 Cfa alignment mark formation in image sensors

Publications (1)

Publication Number Publication Date
CN102077349A true CN102077349A (zh) 2011-05-25

Family

ID=41061313

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801248622A Pending CN102077349A (zh) 2008-07-09 2009-07-07 图像传感器中的滤色器阵列对准标记形成

Country Status (7)

Country Link
US (2) US8017426B2 (enExample)
EP (1) EP2304797B1 (enExample)
JP (1) JP5427234B2 (enExample)
KR (1) KR101351145B1 (enExample)
CN (1) CN102077349A (enExample)
TW (1) TWI463645B (enExample)
WO (1) WO2010005555A1 (enExample)

Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN102842499A (zh) * 2011-06-24 2012-12-26 台湾积体电路制造股份有限公司 含硅和钽的阻挡件的原位形成
WO2021189484A1 (zh) * 2020-03-27 2021-09-30 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置

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US8139130B2 (en) 2005-07-28 2012-03-20 Omnivision Technologies, Inc. Image sensor with improved light sensitivity
US8274715B2 (en) 2005-07-28 2012-09-25 Omnivision Technologies, Inc. Processing color and panchromatic pixels
US7916362B2 (en) 2006-05-22 2011-03-29 Eastman Kodak Company Image sensor with improved light sensitivity
US8031258B2 (en) 2006-10-04 2011-10-04 Omnivision Technologies, Inc. Providing multiple video signals from single sensor
US8896712B2 (en) * 2007-07-20 2014-11-25 Omnivision Technologies, Inc. Determining and correcting for imaging device motion during an exposure
US8350952B2 (en) * 2008-06-04 2013-01-08 Omnivision Technologies, Inc. Image sensors with improved angle response
US7859033B2 (en) 2008-07-09 2010-12-28 Eastman Kodak Company Wafer level processing for backside illuminated sensors
US7915067B2 (en) * 2008-07-09 2011-03-29 Eastman Kodak Company Backside illuminated image sensor with reduced dark current
US20100006908A1 (en) * 2008-07-09 2010-01-14 Brady Frederick T Backside illuminated image sensor with shallow backside trench for photodiode isolation
US8224082B2 (en) * 2009-03-10 2012-07-17 Omnivision Technologies, Inc. CFA image with synthetic panchromatic image
US8068153B2 (en) * 2009-03-27 2011-11-29 Omnivision Technologies, Inc. Producing full-color image using CFA image
US8045024B2 (en) * 2009-04-15 2011-10-25 Omnivision Technologies, Inc. Producing full-color image with reduced motion blur
US8203633B2 (en) * 2009-05-27 2012-06-19 Omnivision Technologies, Inc. Four-channel color filter array pattern
US8237831B2 (en) * 2009-05-28 2012-08-07 Omnivision Technologies, Inc. Four-channel color filter array interpolation
US8125546B2 (en) * 2009-06-05 2012-02-28 Omnivision Technologies, Inc. Color filter array pattern having four-channels
US8253832B2 (en) * 2009-06-09 2012-08-28 Omnivision Technologies, Inc. Interpolation for four-channel color filter array
US8389922B2 (en) * 2010-08-04 2013-03-05 Himax Imaging, Inc. Sensing Devices and Manufacturing Methods Therefor
US8846494B2 (en) 2011-07-07 2014-09-30 Aptina Imaging Corporation Alignment marks and alignment methods for aligning backside components to frontside components in integrated circuits
US9269743B2 (en) 2013-11-21 2016-02-23 Semiconductor Components Industries, Llc Methods of forming imaging device layers using carrier substrates
FR3050831B1 (fr) * 2016-04-29 2018-04-27 Silios Technologies Dispositif d'imagerie multispectrale
CN115119184A (zh) 2016-08-16 2022-09-27 IPCom两合公司 用于设备到设备通信的传输资源的重用
KR102530072B1 (ko) 2018-01-10 2023-05-08 삼성전자주식회사 이미지 센서, 촬상 장치 및 이미지 센서 칩 패키지의 제조 방법

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JPS63108717A (ja) * 1986-10-27 1988-05-13 Nec Corp 半導体装置の製造方法
US5227313A (en) 1992-07-24 1993-07-13 Eastman Kodak Company Process for making backside illuminated image sensors
US5244817A (en) 1992-08-03 1993-09-14 Eastman Kodak Company Method of making backside illuminated image sensors
US5786236A (en) 1996-03-29 1998-07-28 Eastman Kodak Company Backside thinning using ion-beam figuring
US6429036B1 (en) 1999-01-14 2002-08-06 Micron Technology, Inc. Backside illumination of CMOS image sensor
US6168965B1 (en) 1999-08-12 2001-01-02 Tower Semiconductor Ltd. Method for making backside illuminated image sensor
JP2005019898A (ja) * 2003-06-27 2005-01-20 Denso Corp 半導体基板およびその製造方法
JP4046069B2 (ja) 2003-11-17 2008-02-13 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
JP2005268738A (ja) * 2004-02-17 2005-09-29 Sony Corp 固体撮像素子とその製造方法、及び半導体集積回路装置とその製造方法
WO2006137867A1 (en) 2004-09-17 2006-12-28 California Institute Of Technology Fabrication method for back-illuminated cmos or ccd imagers made from soi wafer
US7087532B2 (en) * 2004-09-30 2006-08-08 International Business Machines Corporation Formation of controlled sublithographic structures
JP4123446B2 (ja) * 2005-08-03 2008-07-23 ソニー株式会社 固体撮像素子の製造方法
US7315014B2 (en) 2005-08-30 2008-01-01 Micron Technology, Inc. Image sensors with optical trench
US20070052050A1 (en) 2005-09-07 2007-03-08 Bart Dierickx Backside thinned image sensor with integrated lens stack
US7586139B2 (en) 2006-02-17 2009-09-08 International Business Machines Corporation Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor
KR100791336B1 (ko) 2006-08-10 2008-01-07 삼성전자주식회사 이미지 센서 제조 방법
JP4816601B2 (ja) * 2007-09-07 2011-11-16 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
US20100006908A1 (en) * 2008-07-09 2010-01-14 Brady Frederick T Backside illuminated image sensor with shallow backside trench for photodiode isolation
US7859033B2 (en) * 2008-07-09 2010-12-28 Eastman Kodak Company Wafer level processing for backside illuminated sensors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102842499A (zh) * 2011-06-24 2012-12-26 台湾积体电路制造股份有限公司 含硅和钽的阻挡件的原位形成
WO2021189484A1 (zh) * 2020-03-27 2021-09-30 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
GB2606871A (en) * 2020-03-27 2022-11-23 Boe Technology Group Co Ltd Display substrate and manufacturing method therefor, and display device
GB2606871B (en) * 2020-03-27 2024-12-11 Boe Technology Group Co Ltd Display substrate and manufacturing method therefor, and display device

Also Published As

Publication number Publication date
EP2304797B1 (en) 2012-12-12
KR101351145B1 (ko) 2014-01-14
JP2011527828A (ja) 2011-11-04
JP5427234B2 (ja) 2014-02-26
TW201007937A (en) 2010-02-16
TWI463645B (zh) 2014-12-01
KR20110028649A (ko) 2011-03-21
WO2010005555A1 (en) 2010-01-14
US8017426B2 (en) 2011-09-13
EP2304797A1 (en) 2011-04-06
US20100006909A1 (en) 2010-01-14
US20110285880A1 (en) 2011-11-24

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Effective date: 20110629

C41 Transfer of patent application or patent right or utility model
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Address before: American New York

Applicant before: Eastman Kodak Corp.

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20110525