CN103972252B - 包含透明像素和硬掩模的彩色滤光器 - Google Patents
包含透明像素和硬掩模的彩色滤光器 Download PDFInfo
- Publication number
- CN103972252B CN103972252B CN201310524372.XA CN201310524372A CN103972252B CN 103972252 B CN103972252 B CN 103972252B CN 201310524372 A CN201310524372 A CN 201310524372A CN 103972252 B CN103972252 B CN 103972252B
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- Prior art keywords
- hard mask
- chromatic filter
- mask layer
- transparent hard
- filter
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- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 34
- 230000003287 optical effect Effects 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 238000001914 filtration Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 4
- 238000009738 saturating Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000009825 accumulation Methods 0.000 description 9
- 239000002184 metal Substances 0.000 description 7
- 238000000708 deep reactive-ion etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000149 penetrating effect Effects 0.000 description 5
- 230000012447 hatching Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 238000007521 mechanical polishing technique Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- G02B1/105—
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Optical Filters (AREA)
Abstract
Description
Claims (28)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/754,465 | 2013-01-30 | ||
US13/754,465 US8941159B2 (en) | 2013-01-30 | 2013-01-30 | Color filter including clear pixel and hard mask |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103972252A CN103972252A (zh) | 2014-08-06 |
CN103972252B true CN103972252B (zh) | 2017-01-11 |
Family
ID=51222010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310524372.XA Active CN103972252B (zh) | 2013-01-30 | 2013-10-30 | 包含透明像素和硬掩模的彩色滤光器 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8941159B2 (zh) |
CN (1) | CN103972252B (zh) |
HK (1) | HK1200243A1 (zh) |
TW (1) | TWI538180B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9236411B2 (en) * | 2011-08-03 | 2016-01-12 | Omnivision Technologies, Inc. | Color filter patterning using hard mask |
US8941159B2 (en) | 2013-01-30 | 2015-01-27 | Omnivision Technologies, Inc. | Color filter including clear pixel and hard mask |
US9978887B2 (en) | 2014-10-28 | 2018-05-22 | Silicon Laboratories Inc. | Light detector using an on-die interference filter |
US9627424B2 (en) * | 2014-11-19 | 2017-04-18 | Silicon Laboratories Inc. | Photodiodes for ambient light sensing and proximity sensing |
US9911773B2 (en) | 2015-06-18 | 2018-03-06 | Omnivision Technologies, Inc. | Virtual high dynamic range large-small pixel image sensor |
CN105304678B (zh) | 2015-09-25 | 2018-11-16 | 上海和辉光电有限公司 | 有机发光二极管显示面板的像素排列结构及掩膜板 |
US10510787B2 (en) | 2017-10-19 | 2019-12-17 | Semiconductor Components Industries, Llc | Structures and methods of creating clear pixels |
US10312279B2 (en) | 2017-10-31 | 2019-06-04 | Semiconductor Components Industries, Llc | High dynamic range pixel with in-pixel light shield structures |
CN107703575A (zh) * | 2017-11-29 | 2018-02-16 | 苏州晶鼎鑫光电科技有限公司 | 一种多通道集成滤光片及其制造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101192619A (zh) * | 2006-11-30 | 2008-06-04 | 东部高科股份有限公司 | 图像传感器及其制造方法 |
Family Cites Families (27)
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US4934791A (en) | 1987-12-09 | 1990-06-19 | Matsushita Electric Industrial Co., Ltd. | Color filter |
EP1458028B1 (en) | 1999-12-02 | 2011-05-11 | Nikon Corporation | Solid-state image sensor and production method of the same |
JP3925813B2 (ja) * | 2003-11-17 | 2007-06-06 | シャープ株式会社 | 液晶表示装置およびその製造方法、ハードマスク |
US7524690B2 (en) | 2006-08-10 | 2009-04-28 | United Microelectronics Corp. | Image sensor with a waveguide tube and a related fabrication method |
KR100821475B1 (ko) | 2006-08-30 | 2008-04-11 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
US7569804B2 (en) * | 2006-08-30 | 2009-08-04 | Dongbu Hitek Co., Ltd. | Image sensor having exposed dielectric layer in a region corresponding to a first color filter by a passivation layer |
US20100196683A1 (en) * | 2006-10-27 | 2010-08-05 | Konnklijke Philips Electronics N.V. | Electronic device having a plastic substrate |
KR100835439B1 (ko) | 2006-12-28 | 2008-06-04 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그의 제조방법 |
US7935560B2 (en) * | 2007-09-06 | 2011-05-03 | International Business Machines Corporation | Imagers having electrically active optical elements |
KR100884977B1 (ko) | 2007-10-18 | 2009-02-23 | 주식회사 동부하이텍 | 씨모스 이미지 센서 및 그의 제조 방법 |
US7924504B2 (en) | 2008-01-01 | 2011-04-12 | United Microelectronics Corp. | Color filter structure having inorganic layers |
TWI376795B (en) | 2008-06-13 | 2012-11-11 | Taiwan Semiconductor Mfg | Image sensor device and method for manufacturing the same |
JP5017193B2 (ja) | 2008-06-30 | 2012-09-05 | パナソニック株式会社 | 固体撮像装置及びカメラ |
US9123614B2 (en) * | 2008-10-07 | 2015-09-01 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
KR101640417B1 (ko) | 2010-01-22 | 2016-07-25 | 삼성전자 주식회사 | 반도체 패키지 및 이의 제조 방법 |
KR101685007B1 (ko) * | 2010-03-19 | 2016-12-12 | 인비사지 테크놀로지스, 인크. | 감지성 반도체 다이오드를 채용한 이미지 센서 |
JP2011258728A (ja) | 2010-06-08 | 2011-12-22 | Sharp Corp | 固体撮像素子および電子情報機器 |
RU2014106364A (ru) | 2011-07-25 | 2015-08-27 | Аллерган, Инк. | Производные n-(имидазолидин-2-илидин)хинолина как модуляторы адренергических рецепторов альфа-2 |
US9236411B2 (en) | 2011-08-03 | 2016-01-12 | Omnivision Technologies, Inc. | Color filter patterning using hard mask |
JP2013131553A (ja) | 2011-12-20 | 2013-07-04 | Toshiba Corp | 固体撮像装置 |
JP6083930B2 (ja) * | 2012-01-18 | 2017-02-22 | キヤノン株式会社 | 光電変換装置および撮像システム、光電変換装置の製造方法 |
KR101352433B1 (ko) | 2012-04-04 | 2014-01-24 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조 방법 |
US8779484B2 (en) | 2012-11-29 | 2014-07-15 | United Microelectronics Corp. | Image sensor and process thereof |
KR20140085656A (ko) | 2012-12-26 | 2014-07-08 | 에스케이하이닉스 주식회사 | 이미지센서 및 그 제조 방법 |
US9252183B2 (en) | 2013-01-16 | 2016-02-02 | Canon Kabushiki Kaisha | Solid state image pickup apparatus and method for manufacturing the same |
US8941159B2 (en) | 2013-01-30 | 2015-01-27 | Omnivision Technologies, Inc. | Color filter including clear pixel and hard mask |
US8835306B2 (en) | 2013-02-01 | 2014-09-16 | GlobalFoundries, Inc. | Methods for fabricating integrated circuits having embedded electrical interconnects |
-
2013
- 2013-01-30 US US13/754,465 patent/US8941159B2/en active Active
- 2013-10-09 TW TW102136628A patent/TWI538180B/zh active
- 2013-10-30 CN CN201310524372.XA patent/CN103972252B/zh active Active
-
2014
- 2014-12-10 US US14/565,773 patent/US9291755B2/en active Active
-
2015
- 2015-01-21 HK HK15100676.4A patent/HK1200243A1/zh unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101192619A (zh) * | 2006-11-30 | 2008-06-04 | 东部高科股份有限公司 | 图像传感器及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20140210028A1 (en) | 2014-07-31 |
TW201431054A (zh) | 2014-08-01 |
US20150091119A1 (en) | 2015-04-02 |
US8941159B2 (en) | 2015-01-27 |
CN103972252A (zh) | 2014-08-06 |
US9291755B2 (en) | 2016-03-22 |
HK1200243A1 (zh) | 2015-07-31 |
TWI538180B (zh) | 2016-06-11 |
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